Band bending of n‐InN epilayers and exact solution of the classical Thomas–Fermi equation

The exact solution of the Thomas–Fermi equation for a planar accumulation layer of a degenerate semiconductor is presented. The obtained results are compared with theoretical literature data. The applicability of the solution is demonstrated by using results of electrochemical capacitance–voltage measurements and photoluminescence data for n‐InN epilayers. It has been found that the difference between the electron concentrations estimated from the Hall and photoluminescence measurements is a measure of the electron content in the accumulation layer with acceptable accuracy. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Charge accumulation nanolayer: A 2D electronic channel in Cs/n-InGaN ultrathin interfaces

This paper reports on the formation of a 2D electronic channel, i.e., a charge accumulation layer on the n-InGaN(0001) surface observed under adsorption of submonolayer Cs coatings. It is found that photoemission from the accumulation layer is excited by light in the InGaN transparency region. It is established that the potential well depth and the density of electronic states in the accumulation layer can be controlled by properly varying the Cs coverage. It is shown that the accumulation layer exhibits quantum-well effects. The photoemission matrix element is calculated, and the energy parameters of the accumulation layer are obtained. An oscillatory structure originating from the Fabry-Perot interference is revealed in the spectra of photoemission from the accumulation layer.     

Charge accumulation layer in Cs,Ba/<Emphasis Type="Italic">n</Emphasis>-GaN(0001) ultrathin interfaces: Electronic and photoemission properties

Experimental studies and theoretical calculations of the photoemission from Cs/n-GaN(0001) and Ba/n-GaN(0001) ultrathin interfaces were carried out. The electronic properties of the interfaces were studied in situ using threshold photoemission spectroscopy under vacuum at a residual pressure of P ～ 5 × 10^?11 Torr. A new effect was revealed, namely, photoemission with a high quantum yield under excitation with light in the transparency region of GaN. It was shown that adsorption of Cs or Ba on n-GaN brings about the formation of a quasi-two-dimensional electron channel, i.e., a charge accumulation layer directly near the surface. The dependences of the photoemission spectra and work function on the thickness of Cs and Ba coatings were investigated. It was established that adsorption of Cs and Ba leads to a sharp decrease in the work function by ～1.45 and ～1.95 eV, respectively. The photoemission spectra were calculated, and parameters of the accumulation layer, such as the energy position of the layer below the Fermi level for different Cs and Ba coverages, were determined. It was demonstrated that the energy parameters of the accumulation layer on the n-GaN(0001) surface can be controlled by properly varying the Cs or Ba coverage. The layer thickness was found to reach a maximum for a cesium coverage of ～0.5 monolayer.     

Radiation-stimulated processes in irradiated hexagonal TlInS<Subscript>2</Subscript> crystals

The anisotropy of electrical conductivity in hexagonal TlInS₂ crystals irradiated by γ-quanta is investigated. It is established that irradiation by low doses (~50 krad) gives rise to accumulation of radiation defects both in the tetrahedral space and in the layer plane. As a result, there is an increase in electrical conductivities σ_⊥C and σ_∥C. As the dose is increased (above 200 krad), more complex defects are formed due to interaction of the radiation defects with the inhomogeneities, thus reducing the increase of electrical conductivity in both directions.     

Pb induced charge accumulation on InAs(1 1 1)B

The Pb/InAs(1 1 1)B interface has been studied by synchrotron radiation photoelectron spectroscopy (SR-PES) of valence band and In4d, As3d and Pb5d core levels. Room temperature deposition of ∼1 ML of Pb on InAs(1 1 1)B leads to an ordered overlayer that induces a metallic channel at the surface, as seen through a weak emission in the vicinity of the Fermi level. Its narrow localization in reciprocal space supports the formation of a two-dimensional free electron gas (2DEG) in the surface region. It is proposed that the adsorbed metal layer swaps the initial polarisation of the surface and thus pulls electrons back to the surface. This charge re-arrangement increases the charge density in the accumulation layer and reduces the screening length and thus the depth of the potential well at the surface.     

Electronic structure of bismuth terminated InAs(1 0 0)

Deposition of Bi onto (4 × 2)/c(8 × 2)-InAs(1 0 0) and subsequent annealing results in a (2 × 6) surface reconstruction as seen by low electron energy diffraction. The Bi condensation eliminates the original (4 × 2) surface reconstruction and creates a new structure including Bi-dimers. This surface is metallic and hosts a charge accumulation layer seen through photoemission intensity near the Fermi level. The accumulation layer is located in the bulk region below the surface, but the intensity of the Fermi level structure is strongly dependent on the surface order.     

Charge accumulation layer on the <Emphasis Type="Italic">n</Emphasis>-GaN (0001) surface with ultrathin Ba coatings

The adsorption of Ba on the n-type GaN(0001) surface is studied. It is found that submonolayer Ba coatings induce cardinal changes in the electronic properties of the surface with the formation of a charge accumulation layer in the region of the near-surface band bending. The excitation of the Ba/n-GaN system by light from the region of GaN transparency results in photoemission. The lowest value of the work function corresponds to ～1.90 eV at a Ba coverage of ～0.4 ML. Two surface bands induced by Ba adsorption are found in the surface photoemission spectra.     

Adsorption of Cs on InAs(1 1 1) surfaces

Caesiated InAs(1 1 1)B (1 × 1) and InAs(1 1 1)A (2 × 2) surfaces have been studied by photoelectron spectroscopy. On the InAs(1 1 1)B a new (√3 × √3)R30° reconstruction was observed. During Cs evaporation remarkably small changes are observed in the lone pair states, and no sign of an accumulation layer at the surface can be observed. Instead, the additional charge provided by Cs is rapidly transported towards the bulk. On the InAs(1 1 1)A cesium behaves as a typical electropositive alkali metal donator that enhances the already existing accumulation layer.     

Strain accumulation in InAs/In<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Ga<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>As quantum dots

The effect of strain accumulation in the InAs/In _x Ga_1−x As quantum dots (QDs) system was studied in this work. It was found that strain in the In _x Ga_1−x As layer accumulation in the QD layer. This effect resulted in a dramatic reduction of growth mode transition thickness of the QD layer. For InAs/In_0.25Ga_0.75As QDs, critical thickness is measured to be as low as 1.08 ML. The experimental results in this work highlight the importance of strain accumulation in the design and fabrication of QD-based devices with metamorphic buffer layer involved.     

Surface states and accumulation nanolayer induced by Ba and Cs adsorption on the n-GaN(0 0 0 1) surface

The Ba and Cs adsorption on the n-GaN(0 0 0 1) surface has been studied in situ by the threshold photoemission spectroscopy using s- and p-polarized light excitation. Two surface bands induced by Ba (Cs) adsorption are revealed in surface photoemission spectra below the Fermi level. The surface-Fermi level position is found to be changed from significantly below the conduction band minimum (CBM) at clean n-GaN surface to high above the CBM at Ba, Cs/n-GaN interfaces, with the transition from depletion to electron accumulation occurring at low coverages. Photoemission from the accumulation nanolayer is found to excite by visible light in the transparency region of GaN. Appearance of an oscillation structure in threshold photoemission spectra of the Ba, Cs/n-GaN interfaces with existing the accumulation layer is found to originate from Fabry–Perot interference in the transparency region of GaN.     

Influence of semiconductor cap layer on the impurity-free vacancy disordering of the In<Subscript>0.2</Subscript>Ga<Subscript>0.8</Subscript>As/GaAs multiquantum-well structure by dielectric capping layers

The feasibility of normal GaAs, low-temperature-grown GaAs (LT-GaAs) and low-temperature-grown InGaAs (LT-InGaAs) as the capping layers for impurity-free vacancy disordering (IFVD) of the In_0.2Ga_0.8As/GaAs multiquantum-well (MQW) structure has been studied. The normal GaAs, LT-GaAs and LT-InGaAs layers were tested as the outermost capping layer and the intermediate cap layer underneath the SiO₂ or Si₃N₄ capping layer. The degree of quantum-well intermixing (QWI) induced by rapid thermal annealing was estimated by the shift of the photoluminescence (PL) peak energy. It was found that the IFVD of the In_0.2Ga_0.8As/GaAs MQW structure using LT-GaAs (LT-InGaAs) as the outermost capping layer was much smaller (larger) than that using a SiO₂ (Si₃N₄) capping layer. It was also observed that the insertion of the normal GaAs, LT-GaAs and LT-InGaAs cap layers below the SiO₂ or Si₃N₄ capping layer reduces the degree of QWI and the PL intensity after the QWI. A plausible explanation for the influence of normal GaAs, LT-GaAs and LT-InGaAs cap layers for the QWI of the InGaAs/GaAs structure is also discussed. PACS 68.55.Ln; 73.20.Dx; 78.55.-m     

Properties of an Al<Subscript>2</Subscript>O<Subscript>3</Subscript>/Si interface

The phase chemical composition of an Al₂O₃/Si interface formed upon molecular deposition of a 100-nm-thick Al₂O₃ layer on the Si(100) (c-Si) surface is investigated by depth-resolved ultrasoft x-ray emission spectroscopy. Analysis is performed using Al and Si L_{2, 3} emission bands. It is found that the thickness of the interface separating the c-Si substrate and the Al₂O₃ layer is approximately equal to 60 nm and the interface has a complex structure. The upper layer of the interface contains Al₂O₃ molecules and Al atoms, whose coordination is characteristic of metallic aluminum (most likely, these atoms form sufficiently large-sized Al clusters). The shape of the Si bands indicates that the interface layer (no more than 10-nm thick) adjacent to the substrate involves Si atoms in an unusual chemical state. This state is not typical of amorphous Si, c-Si, SiO₂, or SiO_x (it is assumed that these Si atoms form small-sized Si clusters). It is revealed that SiO₂ is contained in the vicinity of the substrate. The properties of thicker coatings are similar to those of the 100-nm-thick Al₂O₃ layer and differ significantly from the properties of the interfaces of Al₂O₃ thin layers.     

Growth and electronic properties of ultra-thin Ag films on Ni(1 1 1)

We studied the growth mode and electronic properties of ultra-thin silver films deposited on Ni(1 1 1) surface by means of scanning tunnelling microscopy (STM) and angle resolved photoemission spectroscopy (ARPES). The formation of the 4d-quantum well states (QWS) was analysed within the phase accumulation model (PAM). The electronic structure of the 1 ML film is consistent with the silver layer which very weakly interacts with the supporting surface. The line-shape analysis of Ag-4d_xz,yz QWS spectrum support the notion of strong localization of these states within the silver layer. The asymmetry of the photoemission peaks implies that the decay of the photo-hole appears to be influenced by the dynamics of the electrons in the supporting surface.     

X-ray spectral analysis of the interface of a thin Al<Subscript>2</Subscript>O<Subscript>3</Subscript> film prepared on silicon by atomic layer deposition

The extent and phase chemical composition of the interface forming under atomic layer deposition (ALD) of a 6-nm-thick Al₂O₃ film on the surface of crystalline silicon (c-Si) has been studied by depthresolved, ultrasoft x-ray emission spectroscopy. ALD is shown to produce a layer of mixed Al₂O₃ and SiO₂ oxides about 6–8 nm thick, in which silicon dioxide is present even on the sample surface and its concentration increases as one approaches the interface with the substrate. It is assumed that such a complex structure of the layer is the result of interdiffusion of oxygen into the layer and of silicon from the substrate to the surface over grain boundaries of polycrystalline Al₂O₃, followed by silicon oxidation. Neither the formation of clusters of metallic aluminum near the boundary with c-Si nor aluminum diffusion into the substrate was revealed. It was established that ALD-deposited Al₂O₃ layers with a thickness up to 60 nm have similar structure.     

Computer simulation study of self-diffusion in Pd(0 0 1) surface

Both the formation energies and the intra- and inter-layer activation energies of self-diffusion of a single vacancy in the first six planes of Pd(0 0 1) surface have been investigated by means of molecular dynamics (MD) in conjunction with the semi-experiential many-body potential of the modified analytical embedded-atom method (MAEAM). The results show that the effect of the surface on the vacancy is only down to the fifth-layer. It is easer for a single vacancy to form and to migrate in the first layer. Furthermore, the vacancy in the second layer is favorable to migrate to the first layer. This is in agreement with the experimental results that the first layer has the highest concentration of the vacancy.     

Investigating <Superscript>64</Superscript>Zn<Superscript>+</Superscript> ion-doped silicon under conditions of hot implantation

The results from visualizing the structure and identifying the composition of surface and the nearsurface layers of CZ n-Si (100) implanted by ⁶⁴Zn⁺ ions with dose of 5 × 10¹⁶ cm^–2 and energy of 50 keV under conditions of a substrate heated to 350°C are presented. It is found that there is no Si amorphization after Zn implantation, and only one layer 200 nm thick forms and is damaged because of radiation-induced defects. Zn nanoparticles 10–100 nm in size are found on a sample’s surface and in its near-surface layer. Computer analysis and mapping of the elemental and phase composition of FIB crater walls and the surface show that the main elements (54%) in the sample near-surface layer are Si, O, and Zn. The presence of ZnO phase is recorded to a depth of 20 nm in the sample.     

Structural, electronic and magnetic properties of the Mnben Ni(110) c(2×2) surface alloy

Using first-principles total energy method, we study the structural, the electronic and the magnetic properties of the MnNi(110) c(2×2) surface alloy. Paramagnetic, ferromagnetic, and antiferromagnetic surfaces in the top layer and the second layer are considered. It turns out that the substitutional alloy in the outermost layer with ferromagnetic surface is the most stable in all cases. The buckling of the Mn–Ni(110) c(2×2) surface alloy in the top layer is as large as 0.26á(1á=0.1 n13) and the weak rippling is 0.038 AA in the third layer, in excellent agreement with experimental results. It is proved that the magnetism of Mn can stabilize this surface alloy. Electronic structures show a large magnetic splitting for the Mn atom, which is slightly higher than that of Mn–Ni(100) c(2×2) surface alloy (3.41 eV) due to the higher magnetic moment. A large magnetic moment for the Mn atom is predicted to be 3.81 μ_B. We suggest the ferromagnetic order of the Mn moments and the ferromagnetic coupling to the Ni substrate, which confirms the experimental results. The magnetism of Mn is identified as the driving force of the large buckling and the work-function change. The comparison with the other magnetic surface alloys is also presented and some trends are predicted.     

Charge accumulation layers and surface states in ultrathin Cs,Ba/n-GaN(0001) interfaces

It is found that ultrathin cesium and barium coatings radically change the electronic properties of the surface and the near-surface region of epitaxial n-GaN(0001) layers. A charge accumulation layer serving as a quasi-two-dimensional electronic channel is first formed by adsorption on the surface of a semiconductor. It is revealed that photoemission from the accumulation layer is excited by visible light from the transparency region of GaN and is characterized by a high quantum yield. It is found that the photoemission thresholds hν _s and hν _p for s-and p-polarized excitation are equal to each other and correspond to the work function. The lowest work function for Cs,Ba/n-GaN interfaces is observed at Cs or Ba coverages close to 0.5 monolayer. Two bands induced by the local interaction of cesium (barium) adatoms with gallium dangling bonds are detected in the electronic spectrum of surface states of Cs,Ba/n-GaN interfaces. An oscillation structure is observed in spectral dependences of the photoyield. This effect is new for photoemission. A model of the effect is proposed. It is found that electronic and photoemission properties of the interfaces correlate with the structural perfectness of the epitaxial n-GaN(0001) layers.     

Atomistic simulation of the vacancy in Ni (1 1 0) surface

Both the formation energies and the intra- and inter-layer diffuse activation energies of a vacancy in the first six atomic planes of Ni (1 1 0) surface have been investigated by means of molecular dynamics (MD) in conjunction with the semi-experiential many-body potential of the modified analytical embedded-atom method (MAEAM). The results show that the effect of the surface is only down to the fifth-layer. It is easer for a vacancy in the first or second layer to form and to migrate in intra-layer. For the inter-layer migration, a vacancy in the second or third layer is favorable to migrate to the upper layer, this is not the case for a vacancy in the fourth or fifth layer.     

Magnetic Resonance in [(CoP)<Subscript>soft</Subscript>/NiP/(CoP)<Subscript>hard</Subscript>/NiP]<Subscript><Emphasis Type="Italic">n</Emphasis></Subscript> Multilayer Magnetic Springs

The magnetic resonance properties of [(CoP)_soft/NiP/(CoP)_hard/NiP]_n multilayer films with the properties of magnetic springs have been experimentally studied. It has been found that the deposition of a NiP nonmagnetic amorphous layer on a (CoP)_soft magnetic layer induces the appearance of perpendicular interface anisotropy. The increase in the number of blocks n in the multilayer structure leads to the appearance of the third absorption peak, which is explained by the formation of a noncollinear three-sublattice magnetic structure.