B/N掺杂对双层石墨烯电子特性影响的第一性原理研究

利用平面波超软赝势方法研究了B/N原子单掺杂和共掺杂对双层石墨烯电子特性的影响.对掺杂双层石墨烯进行结构优化,并计算了能带结构、态密度、分波态密度等.分析表明,层间范德瓦尔斯相互作用对双层石墨烯的电子特性有比较明显的影响;B/N原子单掺杂分别对应p型和n型掺杂,会使掺杂片层的能带平移,使得体系能带结构产生较大分裂;双层掺杂的石墨烯能带结构与掺杂原子的相对位置和距离有关,对电子特性有明显的调控作用.其中特别有意义的是,B/N双层共掺杂在不同位置情况下会得到金属性或禁带宽度约为0.3 eV的半导体能带.     

Ni4NdB电子结构和磁性能第一性原理研究

采用第一性原理,在局域自旋密度近似LSDA及LSDA+U近似,对Ni₄NdB化合物进行结构优化,计算体系晶格常数,电子结构和磁性能.结果表明,Ni₄NdB为带隙很小的金属导体,存在Nd-Ni铁磁耦合,体系总磁矩由Nd原子局域磁矩提供.体系原子成键较为复杂,Nd原子与近邻Ni原子成金属键,Nd原子与近邻B原子成较强离子键,Ni原子与近邻Ni原子间存在间接交换相互作用.在U作用下,体系磁矩与Nd原子磁矩变化一致,Ni原子磁矩在2.75 eV呈现磁有序-磁有序崩溃转变 关键词： 密度泛函理论 电子结构 磁性能 稀土过渡金属间化合物     

Structure stability and electronic properties of the Zr-He system: First-principles calculations

Ab initio studies are carried out for the atomic and electronic structures of the Zr-He system. It is revealed that zirconium undergoes a phase transition induced by helium. The most preferred position of the impurity in the metal lattice is determined. The energy of dissolution of helium and the excess volume introduced by helium are calculated. It is shown that the presence of helium in the Zr lattice significantly perturbs the valence charge density of the metal and substantially changes its electronic structure.     

AsI3电子结构与弹性性质的第一性原理研究

采用基于密度泛函理论的第一性原理赝势方法,对AsI3的平衡态晶格常数、弹性常数和电子结构进行了研究。研究结果表明,R-3结构的AsI3在零压下是稳定的,优化得到的平衡结构参数与实验值符合的很好。AsI3是脆性材料,具有大的弹性各向异性特征。R-3相AsI3的块体模量、剪切模量和杨氏模量分别为14.2 GPa, 9.8 GPa和23.9 GPa,泊松比为0.22,德拜温度是163 K。能带结构计算表明,AsI3是带隙为2.34 eV的间接带隙半导体。AsI3的化学键是弱共价键和离子键的混合。     

AsI_3电子结构与弹性性质的第一性原理研究

采用基于密度泛函理论的第一性原理赝势方法,对AsI3的平衡态晶格常数、弹性常数和电子结构进行了研究.研究结果表明,R-3结构的AsI3在零压下是稳定的,优化得到的平衡结构参数与实验值符合的很好.AsI3是脆性材料,具有大的弹性各向异性特征.R-3相AsI3的块体模量、剪切模量和杨氏模量分别为14.2GPa,9.8GPa和23.9GPa,泊松比为0.22,德拜温度是163K.能带结构计算表明,AsI3是带隙为2.34eV的间接带隙半导体.AsI3的化学键是弱共价键和离子键的混合.     

First-principles electronic structure calculations with molecular dynamics made easy

The technique of quantum molecular dynamics is reviewed, and a simplified approach based on a first-principles tight-binding implementation of local density theory is discussed. Several illustrations and applications of the theory are presented. Applying it to amorphous materials, we have developed a procedure for producing amorphous Si networks with small defect concentrations. Benchmark checks are made for atomic geometries at Si(111)-(2×1) and Si(001)-(2×1), p(2×2), and c(4×2) reconstructed surfaces. A simulation of a Scanning Tunneling Microscope tip interacting with a reconstructed surface is performed, and it is shown how the tip can alter the reconstruction of the surface. Simulation of a kinked Si(001) surface step and comparison to an unkinked step are also presented.     

Energetic and electronic structure of BC2N compounds

The stability and electronic structure of BC2N compounds are studied using first-principle calculations. The investigated structures have the topology of graphite layers with either carbon, nitrogen or boron atoms at each site. The calculations show that stabler structures are obtained by increasing the number of C-C and B-N bonds. On the other hand, less stable structures result from increasing the number of N-N and B-B bonds. The energy gap of the stablest compounds varies from 0.0 to 1.62 eV, depending on the distribution of B, C, and N atoms in the unit cell. The electronic properties of BC2N layered materials strongly depend on their atomic arrangements. The observed changes in energy gaps do not simply follow a symmetry-based argument proposed earlier.     

第一性原理计算N掺杂对InNbO_4电子结构的影响

宽带隙(3.83 e V)半导体光催化材料InNbO_4在紫外光作用下具有分解水和降解有机物的性能.最近实验发现了N掺杂InNbO_4具有可见光下分解水制氢的活性.为了从理论上解释这一实验现象,本文采用基于密度泛函理论的第一性原理计算了N掺杂对InNbO_4的能带结构、态密度和光学性质的影响.分析能带结构可得,N掺杂后在InNbO_4的价带(O 2p)上方形成N 2p局域能级,导致电子跃迁所需的能量减小.吸收光谱表明,N掺杂后InNbO_4的光吸收边出现了红移,实现了可见光吸收.     

第一性原理计算N掺杂对InNbO4电子结构的影响

宽带隙（3.83 eV）半导体光催化材料InNbO4在紫外光作用下具有分解水和降解有机物的性能。最近实验发现了N掺杂InNbO4具有可见光下分解水制氢的活性。为了从理论上解释这一实验现象,本文采用基于密度泛函理论的第一性原理计算了N掺杂对InNbO4的能带结构、态密度和光学性质的影响。分析能带结构可得,N掺杂后在InNbO4的价带（O 2p）上方形成N 2p局域能级,导致电子跃迁所需的能量减小。吸收光谱表明,N掺杂后InNbO4的光吸收边出现了红移,实现了可见光吸收。     

Gd2Co2Al电子结构和磁性的第一性原理研究

从第一性原理出发,在局域自旋密度近似(LSDA)和LSDA+U(在位库仑能)近似下,采用FPLAPW密度泛函能带计算方法研究了Gd2Co2Al的电子结构和磁性.从平均场近似出发,估算了体系的居里温度,并分析了导致体系居里温度偏低的原因.研究结果显示Gd2Co2Al为金属导体,其强的铁磁性的提供者主要是Gd,且Co的局域铁磁性是不稳定的.基于LSDA近似的计算表明Gd2Co2Al呈现亚铁磁性,因为Co与Gd两者磁矩反平行排列.考虑在位库仑能修正的LSDA+U方法则发现一个适当的在位库仑能(U=3.0eV)使体系从亚铁磁态转变为铁磁态,此时Co原子磁矩基本为零与实验结果更为相符.在位库仑能的变化对Co原子磁矩以及磁性原子的能级分布影响较大,但对Gd的磁性基本无影响.由于体系5d-3d态杂化和在位库仑排斥作用竞争使得Co原子磁矩呈现出波动性的特性.     

FeVO_4电子结构的第一性原理研究

采用基于密度泛函理论的第一性原理方法研究了三斜结构FeVO_4的结构,基态的能带结构、总态密度和分波态密度.将FeVO_4非共线的螺旋磁结构简化为六种不同的反铁磁结构,通过比较不同自旋构型的总能确定了基态磁结构.能带计算和总态密度结果均显示FeVO_4是能隙为2.19 e V的半导体,与实验结果相符.考虑Fe原子的在位库仑能,FeVO_4的能带结构和态密度都发生变化,说明FeVO_4晶体是一个典型的强关联电子体系.     

Ni13Pr3B2电子结构和磁性能第一性原理研

考虑电子自旋极化作用,本研究基于第一性原理的全电子投影缀加平面波赝势法理论,采用局域自旋密度近似LSDA,对Ni13Pr3B2金属间化合物进行结构优化,计算体系晶格常数,电子结构和磁性能。结果表明,Ni13 Pr 3B2为带隙很小的金属导体。LSDA近似下体系原子间存在复杂作用类型,Pr原子与近邻Ni、B原子以离子键作用为主,Ni原子与近邻Ni原子间表现共价作用情形。体系存在Pr -Ni铁磁耦合,总磁矩约2.80212μB,主要由Pr原子磁矩提供,自旋极化引起体系Pr-4f、Ni-3p、Pr-5p电子自旋劈裂为体系表现磁性的根本原因。     

First-principles studies on stabilities and electronic properties of AlN nanostructures

Under the generalized gradient approximation (GGA), the stabilities and electronic properties of semiconductor AlN nanostructures have been investigated by using the first-principles projector-augmented wave (PAW) potential within the density function theory (DFT) framework. The single-walled faceted AlNNTs present an obvious structural modification. The larger the diameter, the more stable the nanowire, and the wires without internal surfaces are more stable than the multiwalled tubes or the SWNT. Therefore, the large-size nanowires are easier to be synthesized than the corresponding multiwalled tubes or single-walled nanotube in experiment. The dangling bonds of surface atoms cause the “localized edge-induced states”. These two nanostructures C and F are still wide band gap semiconductors accompanied by a few surface states located in the band gap of bulk AlN and thus extremely suitable for application in flexible pulse wave sensors, nanomechanical resonators and light-emitting diodes.     

First-principles calculations of magnetic and electronic structures around surfaces and interfaces of magnetic multi-layered structure

Electronic and magnetic structures of ferromagnetic (FM)/non-magnetic (NM) and FM/antiferromagnetic (AF) bi-layer systems are calculated by the first principles approach. For the FM/NM system, we focus on the Co/Cu multi-layered structure whose interfacial layer is assumed to have a mixed composition of Co and Cu atoms, and show a possibility that Co atoms at the interface play a significant role as the spin-dependent scattering potentials. In the FM/AF system, we consider Fe or Co monolayer as FM layer and MnNi as AF layers. It is predicted that the Mn moments adjacent to FM layer are forced to align the FM moments, and those of under layer go gradually to anti-parallel alignment as in the bulk MnNi.     

Sc2O3电子结构和光学性质的第一性原理研究

本文基于第一性原理平面波赝势(PWP)和广义梯度近似(GGA)方法,研究了Sc2O3的电子结构、态密度和光学性质. 计算结果表明：Sc2O3是一种直接带隙半导体,其能带宽度为3.79eV,价带顶部主要由O的2p和Sc的3p3d杂化而成,导带主要由Sc的3d和O的2p构成. 同时,文中也分析了Sc2O3的介电函数、折射率、光电导率和吸收谱等光学性质. 计算得到静态介电常数 ,折射率n0=1.25,在紫外区有较大的吸收系数.     

边缘修饰的石墨烯纳米带电子特性的第一性原理研究

本文采用第一性原理计算方法,研究了zigzag型石墨烯纳米带在边缘采用不同基团（包括氢原子、羟基、酮基、氢和羟基共同饱和）进行修饰后电子特性的改变,计算了能带结构、态密度和电荷差分密度。结果分析表明,不同基团修饰的影响本质上可归结于不同的边缘杂化方式。边缘sp2杂化方式对GNRs体系内层原子的电子状态影响很小,没有改变zigzag-GNRs的金属性;而边缘sp3杂化的体系在能带结构中打开了一个带隙,此带隙随纳米带宽度的增加而逐渐减小。其中GNRs-H2 体系和GNRs-H2O体系发生了由金属性向半导体性的转变,而GNRs-O体系费米能级升高并且进入了导带,依然呈现金属性。利用这种边缘修饰非常易于调控GNRs的电子能带结构。     

Au-Si-Au结点电子输运性质的第一性原理计算

采用密度泛函理论和非平衡格林函数相结合的方法对Au(100)-Si-Au(100) 系统左侧对顶位、右侧对空位的纳米结点的电子输运性质进行了理论模拟计算, 结果得到纳米结点的电导随电极距离(d_z)增大而减小. 在d_z =9.72 Å时, 结点的结合能最低, 结构最稳定, 此时电导为1.227G₀ (G₀=2e²/h), 其电子输运通道主要是Si原子的p_x, p_y和 p_z轨道电子形成的最高占居轨道共振峰; 在外偏压下, 电流-电压曲线表现出线性特征; 随着外加正负电压的增大, 电导略有减小, 且表现出不对称性的变化. 关键词： 硅原子 电子输运 密度泛函理论 非平衡格林函数     

边缘修饰的石墨烯纳米带电子特性的第一性原理研究

本文采用第一性原理计算方法,研究了zigzag型石墨烯纳米带在边缘采用不同基团（包括氢原子、羟基、酮基、氢和羟基共同饱和）进行修饰后电子特性的改变,计算了能带结构、态密度和电荷差分密度。结果分析表明,不同基团修饰的影响本质上可归结于不同的边缘杂化方式。边缘sp2杂化方式对GNRs体系内层原子的电子状态影响很小,没有改变zigzag-GNRs的金属性;而边缘sp3杂化的体系在能带结构中打开了一个带隙,此带隙随纳米带宽度的增加而逐渐减小。其中GNRs-H2 体系和GNRs-H2O体系发生了由金属性向半导体性的转变,而GNRs-O体系费米能级升高并且进入了导带,依然呈现金属性。利用这种边缘修饰非常易于调控GNRs的电子能带结构。     

First-principles electronic structure of rare-earth arsenides

The electronic properties of rare-earth arsenides have been calculated from first principles. In the calculations we have treated the rare-earth f electrons both as core-like and as valence-like electrons. We consider the changes in the energy bands and in the density of states near the Fermi level which are found to be relevant, except for the case of LuAs, and discuss this in relation with the role played from the rare-earth 5d derived states. Moreover we show that the rare-earth 5d related bands are particularly sensitive to the variation of the lattice constant; change in the lattice constant of less than 1% leads to a different behaviour with respect to the crossing of the rare-earth 5d derived bands and the As 4p derived bands along the Δ-direction. This point is discussed in connection with the possibility of having a semimetal-semiconductor transition in the rare-earth arsenides. Received 22 February 2001