首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到17条相似文献,搜索用时 234 毫秒
1.
郝志红  胡子阳  张建军  郝秋艳  赵颖 《物理学报》2011,60(11):117106-117106
研究了掺杂后poly(3,4-ethylene dioxythiophene):poly(styrenesulphonic acid)(PEDOT ∶PSS)电导率的变化以及掺杂PEDOT ∶PSS薄膜对聚合物太阳能电池器件性能的影响. 实验发现,向PEDOT ∶PSS中掺入极性溶剂二甲基亚砜(DMSO)明显提高了薄膜的电导率,掺杂后的电导率最大值达到1.25 S/cm,比未掺杂时提高了3个数量级. 将掺杂的PEDOT ∶PSS薄膜作为缓冲层应用于聚合物电池 (ITO/PEDOT ∶PSS/P3HT ∶PCBM/LiF/Al) 中,发现高电导率的PEDOT ∶PSS降低了器件的串联电阻,增加了器件的短路电流,从而提高了器件的性能. 最好的聚合物太阳能电池在100 mW/cm2的光照下,开路电压(Voc)为0.63 V,短路电流密度(Jsc)为11.09 mA·cm-2,填充因子(FF)为63.7%,能量转换效率(η)达到4.45%. 关键词: PEDOT ∶PSS 电导率 聚合物太阳能电池 能量转换效率  相似文献   

2.
优化界面接触、增强界面处载流子传输对于提高钙钛矿电池性能具有重要意义。本研究将适量二甲基亚砜(DMSO)添加到聚(3,4-乙烯二氧噻吩)-聚(苯乙烯磺酸盐)(PEDOT∶PSS)空穴传输层中,改善了空穴传输层的导电性和空穴传输特性,有效提高了反式平面钙钛矿太阳能电池光伏性能。短路电流(Jsc)从21.29 mA/cm2提高到22.15 mA/cm2,填充因子(FF)从76.35%提高到80.09%,转换效率(PCE)从16.02%提高到17.01%。薄膜与器件性能综合测试结果表明,DMSO的掺入使PEDOT∶PSS发生适度相分离,形成更好的PEDOT导电通道,增强了PEDOT∶PSS的导电特性。稳态光致发光光谱呈现出显著的荧光猝灭效应,也表明掺杂DMSO后PEDOT∶PSS的空穴提取能力得到提高,钙钛矿活性层与阳极之间的空穴传输更加顺畅,有助于实现高达80%以上的填充因子。本研究为改善反式平面钙钛矿太阳电池或有机太阳电池光伏性能提供了一种高效、简便的方法,具有很好的现实意义。  相似文献   

3.
王鹏  郭闰达  陈宇  岳守振  赵毅  刘式墉 《物理学报》2013,62(8):88801-088801
基于传统的体异质结有机太阳能电池结构, 对结构中的混合层改用梯度掺杂的方法, 在AM1.5, 100 mW/cm2光照下, 使得器件的短路电流由原来的7.72 mA/cm2提高到了9.18 mA/cm2, 相应的光电转换效率提高了25%. 器件性能的提升归因于梯度掺杂体系的引入使得体异质结混合层中同一材料分子之间形成了较好的连续网络结构, 降低了器件的串联电阻, 提高了电极对载流子的收集效率, 从而提高了器件的光电转换效率. 关键词: 有机太阳能电池 体异质结 梯度掺杂  相似文献   

4.
采用Bphen和BCP制成双电子传输层(Doubleelectrontransportlayers, DETLs)的有机发光二极管器件, 与Bphen单独作ETL的器件相比, DETLs器件具有较小的空穴漏电流, 效率提升10%。与BCP独自作ETL的器件相比, 更多的电子注入使DETLs器件的效率在50~600mA/cm2的电流范围内没有衰减。BCP作ETL的器件的效率从50mA/cm2时的2.5cd/A衰减至300mA/cm2的2.1cd/A, 衰减了16%。Cs2CO3:BCP独自作ETL的器件效率在50~300mA/cm2的电流范围内衰减了30%, 而Bphen/Cs2CO3:BCP作DETLs的器件效率在50~600mA/cm2的电流范围内衰减幅度为0, 原因是Bphen阻挡了Cs原子扩散至发光层。  相似文献   

5.
采用有机小分子TBPe(2,5,8,11-tetratertbutylperylene)以不同比例掺入MEH-PPV(poly )作为发光层,研究了TBPe不同掺杂比例对器件性能的影响,进而对发光强度进行优化。对于所制备的ITO/PEDOT:PSS/MEH-PPV/TBPe/Al有机电致发光器件,TBPe的最优蒸镀厚度为0.5 nm,其发光强度相对于标准器件提高了325%。ITO/PEDOT:PSS/MEH-PPV:TBPe/TBPe/Liq/Al有机电致发光器件的最优掺杂比例为MEH-PPV:TBPe=100:30(质量比),其发光亮度相比于未掺杂器件提高了44%。在上述器件的基础上增加Alq3层提高电子注入,分别制作了Liq和LiF作为修饰层的ITO/PEDOT:PSS/MEH-PPV:TBPe/TBPe/Alq3/Liq/Al和ITO/PEDOT:PSS/MEH-PPV:TBPe/TBPe/Alq3/LiF/Al多层器件,发光亮度分别达到4 162 cd/m2和4 701 cd/m2。所有器件的电致发光波长均为580 nm,为MEH-PPV的发光,TBPe的掺杂对MEH-PPV的发光起到了增强作用。  相似文献   

6.
制备了四种不同结构的有机太阳能电池器件,器件1 ITO/LiF/PEDOT∶PSS/MEH-PPV/C60/Al、器件2 ITO/PEDOT∶PSS/MEH-PPV/C60/Al、器件3 ITO/LiF/PEDOT∶PSS/MEH-PPV∶C60/C60/Al和器件4 ITO/PEDOT∶PSS/MEH-PPV∶C60/C60/Al。测量了它们的电流-电压特性,结果显示在ITO和PEDOT∶PSS之间插入一薄层LiF使得器件性能得到较大提高。其器件1的JSC和FF比器件2的提高了74%和31%; 器件3的JSC比器件4的提高了约40%。这主要是由于LiF层有效地抑制了空穴向阳极的传输,并且LiF层在ITO和PEDOT:PSS之间形成了良好的界面特性。因此,这种结构上的改进有效地提高了有机太阳能电池的性能。  相似文献   

7.
为提高聚合物太阳能电池的能量转换效率,将聚乙二醇(PEG)掺入PEDOT∶PSS阳极缓冲层,研究了阳极缓冲层修饰对聚合物太阳能电池性能的影响。首先研究了聚乙二醇对PEDOT∶PSS薄膜电导率的影响,发现PEG会与PEDOT和PSS相互作用,使得PEDOT链重新排布,有利于电荷载流子的传输,从而显著改善了PEDOT∶PSS薄膜的电导率,当PEDOT∶PSS中掺入体积分数为2%~4%的PEG时,可得到较大的电导率。然后,以PEG修饰的PEDOT∶PSS薄膜作为阳极缓冲层制备了聚合物太阳能电池,研究了PEG的掺入对聚合物太阳能电池性能的影响。实验发现,PEG改善的PEDOT∶PSS电导率有利于提高电池的短路电流密度和填充因子,从而改善了器件光伏性能。当PEDOT∶PSS中掺入体积分数为2%的PEG时,聚合物太阳能电池的能量转换效率最高,比未掺杂的器件提高了24.4%。  相似文献   

8.
采用在聚(3,4-乙撑二氧噻吩)∶聚苯乙烯磺酸(Poly(3,4-ethylenedioxythiophene)∶Poly(styrenesulfonate),PEDOT∶PSS)阳极界面层上直接旋涂二甲基亚砜(Dimethyl Sulfoxide,DMSO)的方法,对PEDOT∶PSS薄膜进行修饰,以提高所制得的钙钛矿太阳能电池器件性能.在5000rpm转速条件下旋涂DMSO后,器件的能量转换效率达到11.43%,与PEDOT∶PSS阳极界面层未做任何修饰的器件相比,效率提高了29.15%.测试表征了修饰前后PEDOT∶PSS薄膜的透光性、表面形貌、电导率、器件的外量子效率曲线以及器件在光照和暗态下的J-V特性曲线,分析了器件性能提高的原因.结果表明:经过修饰的PEDOT∶PSS薄膜导电性显著增强,从而更加有利于器件阳极对空穴的抽取和收集;较未修饰时,器件的短路电流密度得到了大幅度提升,进而使得器件获得更高的能量转换效率.  相似文献   

9.
白色有机发光器件及其稳定性   总被引:8,自引:8,他引:0  
报道了一种稳定的白色有机薄膜电致发光器件.电流效率6cd/A,在电流密度20mA/cm2驱动下,亮度为1026cd/m2;最高亮度21200cd/m2,色度(x=0.32,y=0.40).该器件具有较平稳的效率电流关系,即具有弱的电流荧光猝灭.初始亮度100cd/m2下,半亮度寿命达22245h.  相似文献   

10.
采用旋涂法对PEDOT∶PSS薄膜进行了酸处理,研究了不同方法处理PEDOT∶PSS薄膜对器件ITO/酸处理PEDOT∶PSS/NPB/Alq3/Li F/Al性能的影响。实验结果表明:用盐酸(草酸)处理PEDOT∶PSS薄膜时,以0.75 mol/L的盐酸(草酸)在120℃下退火15 min时性能更好,最大电流效率达到4.28 cd/A。并且盐酸、草酸处理PEDOT∶PSS薄膜制备器件比未处理PEDOT∶PSS薄膜制备器件的电流效率明显提高了34%。  相似文献   

11.
Poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) was modified by different concentrations of multi-wall carbon nanotubes (MWNTs), and the nanocomposites of PEDOT:PSS and MWNTs were firstly used as hole-injection layer in fabrication of organic light-emitting devices (OLEDs) by using a double-layer structure with hole-injection layer of doped PEDOT:PSS and emitting/electron transport layer of tris(8-hydroxyquinolinato) aluminum (Alq3). PEDOT:PSS solution doped with MWNTs was spin-coated on clean polyethylene terephthalate (PET) substrate with indium tin oxide (ITO). It was found that the electroluminescence (EL) intensity of the OLEDs were greatly improved by using PEDOT:PSS doped with MWNTs as hole-injection layer which might have resulted from the hole-injection ability improvement of the nanocomposites. Higher luminescence intensity and lower turn-on voltage were obtained by these devices and the luminance intensity obtained from the device with the hole-injection layer of PEDOT:PSS doped by 0.4 wt.% MWNTs was almost threefolds of that without doping.  相似文献   

12.
In this work, we investigated for the first time the characteristics of (poly (3-hexylthiopene) and [6, 6]-phenyl C61-butyric acid methyl ester) (P3HT:PCBM) blends-based organic solar cell with 1.25?mg/mL boric-acid (H3BO3)-doped poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) layer which is irradiated under the 40 Gray (Gy) dose of gamma (γ) ray. Experimental results showed that the parameters of solar cell improved with exposure to low-dose gamma radiation. In particular, it has provided a significant improvement in short-circuit current density (Jsc) and power conversion efficiency (PCE). About 49% increase in PCE to 1.22% and 40% increase in Jsc to 6.28?mA/cm2 was obtained between the bare device and the device containing irradiated PEDOT:PSS:H3BO3. Also, it was determined that the H3BO3-doped PEDOT:PSS is more stable to temperature. More importantly, solar cell containing gamma-irradiated PEDOT:PSS:H3BO3 showed best performance comparing to conventional PEDOT:PSS-based cell.  相似文献   

13.
Organic photovoltaic cells have important advantages, such as low cost and mechanical flexibility. The conducting polymer poly(3,4 ethylenedioxy-thiophene):poly(styrene sulfonate) (PEDOT:PSS) has been widely used as an interfacial layer or a polymer electrode in polymer electronic devices, such as photovoltaic devices and light-emitting diodes. In this report, we discuss the direct current (DC) conductivity of PEDOT:PSS films containing various weight ratios of sorbitol dopant. The work function is shown to steadily decrease with increasing dopant content. With different dopant contents, illuminated current–voltage photovoltaic characteristics were observed. Ultraviolet photoelectron spectroscopy (UPS) analysis revealed that the work function of the PEDOT:PSS was affected by its sorbitol content. The morphologies of the doped PEDOT:PSS films were characterized by atomic force microscopy (AFM). For the device fabrication, we made organic photovoltaic cells by a spin-coating process and Al deposition by thermal evaporation. The sorbitol dopant is able to improve the efficiency of the device.  相似文献   

14.
实验中以PEDOT:PSS在ITO基片上旋涂作为空穴传输层,并且在旋涂PEDOT:PSS的过程中在与ITO玻璃平面垂直的方向施加一个诱导聚合物取向的高压电场,试验着重研究了所加电场强度对双层器件:ITO/PEDOT:PSS/MEH-PPV/Al器件性能的影响。测试结果表明,旋涂时所加电场的大小对器件的发光强度和起亮电压都有明显的影响。随着所加电场的增大,器件发光强度明显增加,起亮电压减小。由此表明:在高电场作用下,聚合物分子链沿电场方向发生了取向,而且随着电场增强这种取向作用会表现得越明显,并且在PEDOT:PSS膜表层会形成一个梯度变化的PSS聚集,使得从ITO到MEH-PPV的功函数逐渐上升,降低空穴注入势垒,增强了空穴的注入效率。  相似文献   

15.
《Current Applied Physics》2018,18(10):1095-1100
A cost-effective and efficient organic semiconductor pentacene was developed as a hole transport layer (HTL) material to replace classical PEDOT:PSS for planar perovskite solar cells (PSCs). As expected, the pentacene based device exhibits power conversion efficiency (PCE) of 15.90% (Jsc of 19.44 mA/cm2, Voc of 1.07 V, and FF of 77%), comparable to the PEDOT:PSS based device (PCE of 15.65%, Jsc of 18.78 mA/cm2, Voc of 1.07 V, and FF of 77%) under the same experimental conditions. The excellent performance of vacuum deposited pentacene is mainly attributed to the high efficient charge extraction and transfer in device due to the high-quality perovskite film grown on the top of pentacene substrate and a favorable energy-level alignment together with a desired downward band bending formed at the perovskite/pentacene interface. Our research has confirmed that pentacene could be served as a promising HTL material to achieve effective and potentially economical planar type PSCs.  相似文献   

16.
In this paper, we investigate the effects of glycerol doping on transmittance, conductivity and surface morphology of poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate))(PEDOT:PSS) and its influence on the performance of perovskite solar cells.. The conductivity of PEDOT:PSS is improved obviously by doping glycerol. The maximum of the conductivity is 0.89 S/cm when the doping concentration reaches 6 wt%, which increases about 127 times compared with undoped. The perovskite solar cells are fabricated with a configuration of indium tin oxide(ITO)/PEDOT:PSS/CH_3NH_3PbI_3/PC_(61)BM/Al, where PEDOT:PSS and PC_(61)BM are used as hole and electron transport layers, respectively. The results show an improvement of hole charge transport as well as an increase of short-circuit current density and a reduction of series resistance, owing to the higher conductivity of the doped PEDOT:PSS. Consequently, it improves the whole performance of perovskite solar cell. The power conversion efficiency(PCE) of the device is improved from 8.57% to 11.03% under AM 1.5 G(100 mW/cm~2 illumination) after the buffer layer has been modified.  相似文献   

17.
以紫外臭氧处理超薄Ag复合MoO3或PEDOT:PSS修饰ITO电极的高效柔性有机太阳能电池。通过优化紫外臭氧处理Ag薄膜的时间,提高了以P3HT:PCBM为有源层的器件的功率转换效率,从1.68%(未经过紫外臭氧处理)提高到2.57%(紫外臭氧处理Ag 1 min)。提高的原因推测是紫外臭氧处理形成了AgOx薄膜,提高了电荷提取并使器件具有高光学透明度、低串联电阻和优异的表面功函数等一些性能。并且,紫外臭氧处理Ag薄膜与MoO3或者PEDOT:PSS复合修饰ITO的器件效率分别得到提高,Ag薄膜与MoO3复合修饰ITO的器件效率从2.02%(PET/ITO/MoO3)提高到2.97%(PET/ITO/AgOx/MoO3),Ag薄膜与PEDOT:PSS复合修饰ITO的器件效率从2.01%(PET/ITO/PEDOT:PSS)提高到2.93%(PET/ITO/AgOx/PEDOT:PSS)。此外,以PBDTTT-EFT:PC71BM为有源层的柔性聚合物太阳能电池效率可达6.21%。基于ITO的柔性光电器件效率的提高主要归于ITO被Ag/PEDOT:PSS或Ag/MoO3修饰后功函数的提高。  相似文献   

设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号