共查询到19条相似文献,搜索用时 171 毫秒
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报道了液态氦温度(4.2 K)下非掺杂ZnSe/BeTe Ⅱ型量子结构中ZnSe势阱层内空间直接光致发光(PL)光谱的磁场依赖性(磁场高达53 T).实验结果显示,随着磁场的增加,激子和带电激子的PL强度呈现出相反的振动行为.当激子的PL强度增加时带电激子的PL强度减小,反之,当激子的强度减小时带电激子的强度却增加.并且在整个磁场范围内,这些振动呈现近似等间隔的周期性变化.这个行为被解释为费米能级与朗道能级的周期性共振,这个共振导致了处于费米能级上的二维电子气态密度的周期性调制.
关键词:
光致发光
二维电子气
带电激子
Ⅱ型量子阱 相似文献
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《光子学报》2015,(1)
在有效质量近似下,计算了盘形量子点中离子施主束缚激子的结合能、光跃迁能、振子强度及辐射寿命.设盘形量子点由有限长的柱形ZnO材料组成,四周被MgxZn1-xO包围,离子施主局域在盘轴.考虑了由于自发极化和压电极化引起的内建电场效应,并在有限深约束势下采用合适的变分波函数进行.计算结果表明,量子盘结构参数(盘高度及垒中Mg组分)和离子施主的位置对离子施主束缚激子的结合能、光跃迁能、振子强度及辐射寿命有强烈的影响.随着盘高度的增加,结合能、光跃迁能和振子强度减小,而辐射寿命增加.对含Mg量较高的盘形量子点,盘高度对结合能、光跃迁能、振子强度及辐射寿命的影响更显著.当施主杂质位于量子点的左界面附近时结合能(光跃迁能)有极大(极小)值,而当施主杂质位于量子点的右界面附近时结合能(光跃迁能)有极小(极大)值. 相似文献
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报道了n型掺杂ZnSe/BeTe/ZnSe Ⅱ型量子阱(type-Ⅱ QW)在极低温 (5—10 K)条件下的各种光学性质. 磁场中(Farada配置)ZnSe层的反射光谱展示了一个典型的负的带电激子(X-)的跃迁特征. 对于空间间接光致发光(spacially indirect PL)光谱,它的主发光峰显示了一个反玻尔兹曼分布的非对称性,并且在磁场中(Voigt配置)它的峰值能量随磁场的增加而降低. 这些实验结果显示了该掺杂样品的空间间接PL是来自Ⅱ型QW结构所特有的带电激子的跃迁.
关键词:
光致发光
二维电子气
带电激子
Ⅱ型量子阱 相似文献
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在有效质量近似下,计算了盘形量子点中离子施主束缚激子的结合能、光跃迁能、振子强度及辐射寿命.设盘形量子点由有限长的柱形ZnO材料组成,四周被Mgx Zn1xO包围,离子施主局域在盘轴.考虑了由于自发极化和压电极化引起的内建电场效应,并在有限深约束势下采用合适的变分波函数进行.计算结果表明,量子盘结构参数(盘高度及垒中Mg组分)和离子施主的位置对离子施主束缚激子的结合能、光跃迁能、振子强度及辐射寿命有强烈的影响.随着盘高度的增加,结合能、光跃迁能和振子强度减小,而辐射寿命增加.对含Mg量较高的盘形量子点,盘高度对结合能、光跃迁能、振子强度及辐射寿命的影响更显著.当施主杂质位于量子点的左界面附近时结合能(光跃迁能)有极大(极小)值,而当施主杂质位于量子点的右界面附近时结合能(光跃迁能)有极小(极大)值. 相似文献
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利用Born近似可以计算高能电子与原子或离子碰撞激发的微分截面和总截面。微分截面正比于广义振子强度。电子碰撞过程可将靶原子或离子激发到无数个束缚态以及相应的连续态。量子亏损理论能够统一处理这些激发态;因此可定义广义振子强度密度——即每单位激发能内的广义振子强度。我们计算了Li的等电子系列Li,Be+,B++,C3+,Ne7+,Na8+,K16+等从基态到S,P,D,F通道的激发的广义振子强度密度,总结了类Li等电子系列离子的广义振子强度密度的标度关系。
关键词: 相似文献
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采用内收缩多参考组态相互作用(ic MRCI)方法结合Dunning等相关一致基,计算Si Cl自由基X2Π和A2Σ+态的势能曲线.讨论参考能和相关能外推对X2Π和A2Σ+态光谱的影响.对势能进行相对论修正及核价修正计算.拟合势能曲线得到X2Π和A2Σ+态的光谱常数.它们与实验结果一致.利用Breit-Pauli算符,计算旋轨耦合效应,得到X2Π1/2和X2Π3/2的势能曲线、并计算它们的光谱常数.求解双原子分子核运动的径向SchrÖdinger方程,获得无转动SiCl自由基2个Λ-S态及X2Π态的耦合分裂态的全部振动态.得到J=0时X2Π态的自旋-轨道耦合常数、较高振动态的惯性转动常数以及X2Π1/2和X2Π3/2的振动能级等分子常数. 相似文献
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Y. Turki-Ben Ali R. Bennaceur 《Physica E: Low-dimensional Systems and Nanostructures》2005,28(4):347-354
The aim of this work is to analyze theoretically the correlation energies for neutral, positively, negatively charged exciton and bi-exciton. So, we propose a model consistent with experimental observations that is small InAs truncated pyramids with circular base lying on wetting layer, both buried into GaAs matrix.In a first step and in contrast to other works, we are able to evaluate coulombic interactions between electron and hole, two electrons and two holes by perturbative method at the second order. In a second step, the correlation energies of many-body complexes X, X-, X+ and XX are investigated as a function of quantum dots basis radius rc and the applied electric field.Our main goal is to provide realistic estimation for the correlation energies of excitons, charged excitons and bi-excitons while retaining at the same time a transparent formalism, which could easily be transposed to structures of actual interest.The present work provides evidence of the stability of excitons, charged excitons and bi-excitons in InAs/GaAs quantum dots. Calculated correlation energies of many-body complexes are consistent with those reported by recent photoluminescence measurements. 相似文献
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《Superlattices and Microstructures》1998,23(5):1097-1102
The positively and negatively charged excitons,X+andX−, respectively, are identified by their magnetic circular dichroism in the absorption spectra of modulation-doped CdTe/Cd0.69Mg0.23Zn0.08Te multiple quantum wells at small carrier densities (≈1010cm−2). In these quantum wells with a width of 8 nm the binding energies of the second electron of theX−exciton and of the second hole of theX+exciton are very similar, 2.9 meV and 2.6 meV, respectively. At larger hole densities a transition to the conducting state is observed. In a sample with intermediate hole density (low 1011cm−2) the insulating phase is restored by application of a magnetic field. 相似文献
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We present theoretical calculations of the variation of exciton energies in truncated conical InGaN quantum dots (QDs) in a GaN matrix with dot size and indium composition. We compute the built-in strain-induced and spontaneous piezoelectric fields using a surface integral method that we have recently derived, and confirm that the built-in fields can be of the order of a few MV/cm, resulting in a spatial separation of the electrons and holes. The ground state wavefunctions of the exciton (X0), biexciton (2X0) and the two charged excitons (X− and X+) are then calculated in the Hartree approximation, using a self-consistent finite difference method. We find that the electron–hole recombination energy is always blue-shifted for the charged excitons X− and X+, with a further blue-shift for the biexciton, and this blue-shift increases with increasing indium content. We describe the trends in interband transition energy and the scale of the blue-shift with dot size, shape and composition. We conclude that spectroscopic studies of the exciton, charged excitons and biexciton should provide a useful probe of the structural and piezoelectric properties of GaN-based QDs. 相似文献
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W. Ossau D. R. Yakovlev C. Y. Hu V. P. Kochereshko G. V. Astakhov R. A. Suris P. C. M. Christianen J. C. Maan 《Physics of the Solid State》1999,41(5):751-756
II–VI quantum-well structures containing a 2DEG of low density have been investigated by means of polarized photoluminescence,
photoluminescence excitation and reflectivity in external magnetic fields up to 20 T. The spin splittings of the exciton X and the negatively charged exciton X
− are measured as a function of the magnetic field strength. The behavior of the magnetic-field-induced polarization degree
of the luminescence line related to X
− demonstrates the formation process of negatively charged excitons from excitons and free carriers polarized by the external
magnetic field. We have determined the binding energies of the trion formed either with the heavy-hole or the light-hole exciton.
The optically detected magnetic resonance (ODMR) technique was applied for the first time to study the optical transition
processes in a nanosecond timescale. The electron ODMR was observed with the detection on either the direct exciton or the
negatively charged exciton X. Further evidence for the interaction of excitons with the electrons of the two-dimensional gas are demonstrated by a combined
exciton-cyclotron resonance line observed in reflectivity and luminescence excitation, shake-up processes observed in photoluminescence,
as well as inelastic and spin-dependent scattering processes.
Fiz. Tverd. Tela (St. Petersburg) 41, 831–836 (May 1999)
Published in English in the original Russian journal. Reproduced here with stylistic changes by the Translation Editor. 相似文献
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《Superlattices and Microstructures》1994,15(3):253
Optical and magneto-optical properties are studied for II-VI semiconductor multiple quantum wells (MQWs) doped with donors in the barriers to give electron concentrations of 2 1010 to 6 1011 cm-2 in the well layers. Following on from the recent identification of negatively charged excitons X- (two electrons bound to one hole) in CdTe/Cd1-xZnxTe MQWs, this paper presents more specifically the circular polarisation of the luminescence associated with X- and with the normal exciton X (one electron and one hole) in this type of structure. Very similar magneto-optical properties are observed for modulation doped Zn0.9Cd0.1Se/ZnSe MQWs, and X- is identified in these wells with a binding energy as large as 7 meV for the second electron at 50Å, well-width. 相似文献
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D. P. Williams A. D. Andreev D. A. Faux E. P. O'Reilly 《Physica E: Low-dimensional Systems and Nanostructures》2004,21(2-4):358
We present a simple analytical approach to calculate the built-in strain-induced and spontaneous piezoelectric fields in nitride-based quantum dots (QDs) and then apply the method to describe the variation of exciton, biexciton and charged exciton energy with dot size in GaN/AlN QDs. We first present the piezoelectric potential in terms of a surface integral over the QD surface, and confirm that, due to the strong built-in electric field, the electrons are localised near the QD top and the holes are localised in the wetting layer just below the dot. The strong localisation and smaller dielectric constant results in much larger Coulomb interactions in GaN/AlN QDs than in typical InAs/GaAs QDs, with the interaction between two electrons, Jee, or two holes, Jhh, being about a factor of three larger. The electron–hole recombination energy is always blue shifted in the charged excitons, X− and X+, and the biexciton, and the blue shift increases with increasing dot height. We conclude that spectroscopic studies of the excitonic complexes should provide a useful probe of the structural and piezoelectric properties of GaN-based QDs. 相似文献
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A. I. Tartakovskii V. B. Timofeev V. G. Lysenko D. Birkedal J. Hvam 《Journal of Experimental and Theoretical Physics》1997,85(3):601-608
Luminescence and luminescence excitation spectra are used to study the energy spectrum and binding energies of direct and
spatially indirect excitons in GaAs/AlaAs superlattices, with different widths of the electron and hole minibands, located
in a high magnetic field perpendicular to the heterolayers. It is found that the ground state of the indirect excitons formed
by electrons and holes and spatially separated between neighboring quantum wells lies between the ls ground state of the direct excitons and the continuum threshold for dissociated exciton states in the minibands. Indirect
excitons in superlattices have a significant oscillator strength when the binding energy of the exciton exceeds the order
of the width of the resulting miniband. The behavior of the binding energy of direct and indirect heavy hole excitons during
changes in the tunneling coupling between the quantum wells is established. It is shown that a strong magnetic field, which
intensifies the Coulomb interaction between the electron and hole in an exciton, weakens the bond in a system of symmetrically
bound quantum wells. The spatially indirect excitons studied here are analogous to first order Wannier-Stark localized excitons
in superlattices with inclined bands (when an electrical bias is applied), but in the present case the localization is of
purely Coulomb origin.
Zh. éksp. Teor. Fiz. 112, 1106–1118 (September 1997) 相似文献
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V. B. Timofeev A. I. Tartakovskii A. I. Filin D. Birkedal J. Hvam 《Physics of the Solid State》1998,40(5):767-769
Luminescence and luminescence excitation spectra are used to study the energy spectrum and binding energies of direct and
spatially indirect excitons in GaAs/AlGaAs superlattices having different electron and hole miniband widths in high magnetic
fields perpendicular to the heterolayers. The ground state of the indirect excitons formed by electrons and holes which are
spatially distributed among neighboring quantum wells is found to lie between the ground 1s state of the direct excitons and the threshold of the continuum of dissociated exciton states in the minibands. The indirect
excitons have a substantial oscillator strength when the binding energy of the exciton exceeds the scale of the width of the
resulting miniband. It is shown that a high magnetic field shifts a system of symmetrically bound quantum wells toward weaker
bonding. At high exciton concentrations, spatially indirect excitons are converted into direct excitons through exciton-exciton
collisions.
Fiz. Tverd. Tela (St. Petersburg) 40, 833–836 (May 1998) 相似文献
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We show that the order of energies of negative (X−) and positive (X+) trions in quantum wires is determined by the relative electron and hole lateral confinements. For equal electron and hole
confinement, X+ has a larger binding energy, but a small imbalance towards a stronger hole localization changes the order of the X− and X+ recombination lines in the photoluminescence spectrum. 相似文献