Theoretical Analysis of the Einstein Relation in n-Channel Inversion Layers on A3IIB2V Semiconductors under Magnetic Quantization

We have investigated the Einstein relation in n-channel inversion layers on A₃^IIB₂^V semiconductors at low temperatures on the basis of a newly derived dispersion relation of the carriers under arbitrary magnetic quantization for the general case which occurs from the consideration of the anisotropies of the band parameters within the frame work of k · p formalism. It is found by incorporating both the effects of electron spin and broadening of Landau levels, using n-Cd₃As₂ as an example, that the theoretical formulation is in qualitative agreement with the suggested experimental method of determining the Einstein relation in degenerate semiconductors having arbitrary dispersion law. In addition, the corresponding well-known results for bulk specimens of two band Kane model both in the presence and absence of magnetic quantization, are also obtained from the generalized expressions as special cases.     

Relaxor behaviour in PZN-PT-BT ferroelectric ceramics

The relaxor behaviour of the (Pb_0.8Ba_0.2)[(Zn_1/3Nb_2/3)_0.7Ti_0.3]O₃ ferroelectric ceramic is presented. A strong dispersion of the maximum of the dielectric permittivity (ε′) below the transition temperature (T_m) is observed, which shift towards higher temperatures with increasing frequency. There is a strong deviation from the Curie-Weiss law. The results are fitted by using the Volger-Fulcher relationship, showing typical behaviour of a spin glass system. The hysteresis loops suggest relaxor behaviour.     

应变Si价带色散关系模型

基于K.P理论框架,通过引入应变哈密顿微扰项,详细推导并建立了应变Si的价带色散关系模型.所得模型适用于任意晶向弛豫Si_1－xGe_x(0≤x≤0.6)衬底上生长的应变Si,并且,通过该模型可以获取任意K矢方向的应变Si价带结构及空穴有效质量,对器件研究设计可提供有价值的参考. 关键词： 应变Si K.P理论 色散关系     

Effects of random biquadratic couplings in a spin-1 spin-glass model

A spin-1 model, appropriated to study the competition between bilinear (J _ij S _i S _j ) and biquadratic (K _ij S _i ² S _j ²) random interactions, both of them with zero mean, is investigated. The interactions are infinite-ranged and the replica method is employed. Within the replica-symmetric assumption, the system presents two phases, namely, paramagnetic and spin-glass, separated by a continuous transition line. The stability analysis of the replica-symmetric solution yields, besides the usual instability associated with the spin-glass ordering, a new phase due to the random biquadratic couplings between the spins. Received 18 May 1999 and Received in final form 20 October 1999     

Wave shape of de Haas-van Alphen oscillations and effective mass in the two-dimensional organic conductor α-(BEDT-TTF)2KHg(SCN)4

De Haas-van Alphen (dHvA) oscillations in the two dimensional organic conductor α-(BEDT-TTF)₂KHg(SCN)₄ have been measured by a canti-lever technique at high magnetic fields up to 30 T. The wave shape of the dHvA oscillations undergoes a drastic change around the transition field B_K (24 T). The effective mass shifts 1.5 m₀ in the density wave phase (B<B_K) to 1.65 m₀ in the normal metallic phase (B>B_K). Based on the simulation, we have determined that the primary cause of the characteristic field dependence of the wave shape is the change in the effective mass.     

On the diffusivity-mobility ratio of the carriers in n-channel inversion layers on ternaryChalcopyrite semiconductors

An attempt is made to study the Einstein relations for the diffusivity-mobility ratios of the carriers in n-channel inversion layers on ternary chalcopyrite semiconductors under both weak and strong electric field limits, taking n-channel inversion layers on CdGeAs₂ as an example. It is found, on the basis of newly derived 2D E-k_s dispersion relations of the conduction electrons for both the limits by considering the various types of anisotropies in the energy band, that the ratios increase with increasing surface electric fields for both the limits and the theoretical results are in qualitative agreement with the suggested experimental method of determining the Einstein relation in degenerate semiconductors having arbitrary dispersion law. The corresponding well-known results for isotropic twoband Kane model are also obtained from the expressions derived.     

Si/SiGe量子级联激光器的能带设计

详细论述Si/SiGe量子级联激光器的工作原理，通过对比找到一组合适的Si，Ge和SiGe合金的能带参数，进而应用6×6 k·p方法计算了不同阱宽、不同Ge组分Si/Si_1-xGe_x/Si量子阱价带量子化的空穴能级本征值及其色散关系，分析Si/Si_1-xGe_x/Si量子阱空穴态能级间距随阱宽和组分的变化规律，最后应用计算结果讨论了Si/SiGe量子级联激光器有源区的能带设计，有益于优化Si /SiGe量子级联激光器结构. 关键词： 硅锗材料 量子级联激光器 子带跃迁 k·p方法')" href="#">k·p方法     

Dispersion of second-order nonlinear optical coefficient

A simple, approximate relation between the dispersion of the second-order nonlinear optical (SNLO) coefficient and first-order susceptibility has been derived using the well-known results of density-matrix calculation of quantum-mechanical theory. A new tensor of SNLO coefficient has been defined, which retains symmetries when the input beams are in the spectral range of transparency while the generated beam can also be in the spectral range of absorption. The validity of the relation has been checked for three ferroelectric crystals, KTP, LiNbO₃ and KNbO₃, which are transparent in the visible and near infrared, and for two semiconductors, GaP and GaAs, which absorb in the visible. Contrary to Miller’s law, the presented relation is in good agreement with measurements. Received: 8 February 2001 / Revised version: 2 July 2001 / Published online: 10 October 2001     

Model glasses coupled to two different heat baths

In a p-spin interaction spherical spin-glass model both the spins and the couplings are allowed to change with time. The spins are coupled to a heat bath with temperature T, while the coupling constants are coupled to a bath having temperature T_J. In an adiabatic limit (where relaxation time of the couplings is much larger that of the spins) we construct a generalized two-temperature thermodynamics. It involves entropies of the spins and the coupling constants. The application for spin-glass systems leads to a standard replica theory with a non-vanishing number of replicas, n=T/T _J . For p>2 there occur at low temperatures two different glassy phases, depending on the value of n. The obtained first-order transitions have positive latent heat, and positive discontinuity of the total entropy. This is an essentially non-equilibrium effect. The dynamical phase transition exists only for n<1. For p=2 correlation of the disorder (leading to a non-zero n) removes the known marginal stability of the spin glass phase. If the observation time is very large there occurs no finite-temperature spin glass phase. In this case there are analogies with the non-equilibrium (aging) dynamics. A generalized fluctuation-dissipation relation is derived. Received 12 July 1999 and Received in final form 8 December 1999     

Two interacting particles in a disordered chain III: Dynamical aspects of the interplay disorder-interaction

The interplay between the quantum interferences responsible for one particle localization over a length L₁, and the partial dephasing induced by a local interaction of strength U with another particle leading to partial delocalization over a length L ₂ > L ₁ , is illustrated by a study of the motion of two particles put close to each other at the initial time. Localization is reached in two steps. First, before the time t₁ necessary to propagate over L₁, the interaction slows down the ballistic motion. On the contrary, after t₁ the interaction favors a very slow delocalization, characterized by a spreading of the center of mass, until L₂ is reached. This slow motion is related to the absence of quantum chaos in this one dimensional model, the interaction being only able to induce weaker chaos with critical spectral statistics. Under appropriate initial conditions, the motion remains invariant under the duality transformation mapping the behavior at small U onto the behavior at large U. Received 24 August 1998     

Neutron,x-ray and lattice dynamical studies of paraelectric Sb2S3

Neutron and x-ray diffraction studies of Sb₂S₃ indicate extensive diffuse scattering in the plane perpendicular to the chain axis of polymer-like (Sb₄S₆) _n molecules. The crystal structure of the paraelectric phase is said to be orthorhombic with space group D _2h ¹⁶ with four molecules per unit cell. The observed diffuse scattering may be due to static disorder or some dynamical effects. In this paper the authors have examined the possible dynamical origin by recourse to lattice dynamical studies. Dispersion relation of phonons along the three symmetry directionsa*,b* andc* is evaluated based on a lattice dynamical model incorporating Coulomb, covalent and a Born-Mayer-like short range interactions. Group theoretical analysis based on the group of neutral elements of crystal sites (GNES) was essential in order to examine and aid in the numerical computations. The group theoretical technique involving GNES extended to ‘pseudo-molecular’ systems is also discussed in this context. The phonon dispersion relation shows that there are rather flat TA-TO branches of very low frequency in thea andc directions which may give rise to diffuse scattering. The branches along theb-axis are quite dissimilar to those alonga andc axes because of anisotropy. Variation of the potential parameters leads to instability of the lowest TA-TO branch. This is suggestive of a temperatures or pressure-dependent phase transition. However since these modes are optically ‘silent’ one needs to carry out either high resolution neutron scattering or ultrasonic studies to confirm various aspects of the theoretical studies.     

Tracer dispersion in power law fluids flow through porous media: Evidence of a cross-over from a logarithmic to a power law behaviour

An analytical model is presented to describe the dispersion of tracers in a power-law fluid flowing through a statistically homogeneous and isotropic porous medium. The model is an extension of Saffman's approach to the case of non-Newtonian fluids. It is shown that an effective viscosity depending on the pressure gradient and on the characteristics of the fluid, must be introduced to satisfy Darcy's law. An analytical expression of the longitudinal dispersivity is given as a function of the Peclet number Pe and of the power-law index n that characterizes the dependence of the viscosity on the shear rate . As the flow velocity increases the dispersivity obeys an asymptotic power law: . This asymptotic regime is achieved at moderate Peclet numbers with strongly non-Newtonian fluids and on the contrary at very large values when n goes to 1 ( for n=0.9). This reflects the cross-over from a scaling behaviour for towards a logarithmic behaviour predicted for Newtonian fluids (n=1). Received: 22 July 1997 / Revised and Accepted: 2 July 1998     

Effect of temperature and high pressure on Mn2+ EPR spectra in K3H(SO4)2 fast-proton conductor

The linewidth ΔH _pp and spin-Hamiltonian parameters under temperature and high hydrostatic pressure by X-band continuous wave electron paramagnetic resonance in the K₃H(SO₄)₂ crystal were studied. Spin-Hamiltonian parameters, direction cosines and coordination of Mn²⁺ ion were determined at room temperature. The pressure at 300?MPa leads to the change of hydrogen bond potential and the transition from double well to single well potential moves about 10?K towards a higher temperature.     

Magnetic ordering and instability investigation of multiferroic Pb(Fe2/3W1/3)O3 ceramics by microwave dielectric spectroscopy

The microwave dielectric and magnetic properties of Pb(Fe_2/3W_1/3)O₃ multiferroic ceramics were investigated. A dielectric dispersion occurring in the frequency range 100 MHz-3 GHz and in a broad temperature range showed itself to be a powerful tool to detect magnetostrictive effects. The experimental results revealed the following remarkable features: the temperature dependence of f_R (characteristic frequency) and the dielectric strength Δε (characteristic of the dispersion) enabled us to identify not only the para-ferroelectric (T_C≈180 K) but also the para-antiferromagnetic (T_N≈340 K) phase transitions, while magnetic measurements revealed the para-antiferromagnetic ordering and a weak superexchange interaction (T_N2∼15 K). Additionally, both characterizations confirmed the existence of structural or magnetic instabilities around 250 K.     

Structure and phase transitions in chloroantimonate(V) crystals: [(C2H5)3NH]SbCl6 and [(C2H5)3NH]SbCl6·1/2[(C2H5)3NH]Cl

New triethylammonium salts: [(C₂H₅)₃NH]SbCl₆ (TCA) and [(C₂H₅)₃NH]SbCl₆·1/2[(C₂H₅)₃NH]Cl (TCAT) have been synthesized. The compounds crystallise in monoclinic symmetry: space groups P2₁/n and P2₁/c, for TCA at 293 K and TCAT at 100 K, respectively. The crystal structure of [(C₂H₅)₃NH]SbCl₆ consists of discrete ionic pairs—triethylammonium cations and hexachloroantimonate anions—linked via the bifurcated N-H?Cl hydrogen bonds. The crystal structure of [(C₂H₅)₃NH]SbCl₆·1/2[(C₂H₅)₃NH]Cl is composed of three symmetrically independent triethylammonium cations, chlorine anion and two symmetrically independent hexachloroantimonate anions. TCA undergoes a structural phase transition at 336 K (on heating) into the orthorhombic C222 space group, whereas TCAT reveals a structural phase transition at 332 K. The phase transitions are of the first order type. TCA shows a ferroelastic domain structure below 336 K. Differential scanning calorimetry, dilatometric, dielectric dispersion and Raman scattering measurements have been used to study the phase transition mechanisms in these triethylammonium salts.     

Interaction induced delocalization of two particles: large system size calculations and dependence on interaction strength

The localization length L₂ of two interacting particles in a one-dimensional disordered system is studied for very large system sizes by an efficient and accurate variant of the Green function method. The numerical results (at the band center) can be well described by the functional form L ₂ =L ₁ [0.5+c(U) L ₁ ] where L₁ is the one-particle localization length and the coefficient depends on the strength U of the on-site Hubbard interaction. The Breit-Wigner width or equivalently the (inverse) life time of non-interacting pair states is analytically calculated for small disorder and taking into account the energy dependence of the one-particle localization length. This provides a consistent theoretical explanation of the numerically found U-dependence of c(U). Received 16 September 1998     

Coulomb excitation of 72 30Zn42

The reduced transition probability B(E2: 0₁ ⁺→ 2⁺) of ⁷²Zn has been measured for the first time by Coulomb excitation at intermediate energy. The result B(E2: 0₁ ⁺→ 2⁺) = 1740±210 e²fm⁴, corresponds to the deformation parameter β₂ of 0.23, in close agreement with expectations derived from the neighboring nucleus ⁷³Zn. A discussion of the evolution of the N = 40 sub-shell closure as a function of Z is presented. Received: 19 December 2001 / Accepted: 14 March 2002     

Dynamical mean-field study of the Mott transition in thin films

The correlation-driven transition from a paramagnetic metal to a paramagnetic Mott-Hubbard insulator is studied within the half-filled Hubbard model for a thin-film geometry. We consider simple-cubic films with different low-index surfaces and film thickness d ranging from d=1 (two-dimensional) up to d=8. Using the dynamical mean-field theory, the lattice (film) problem is self-consistently mapped onto a set of d single-impurity Anderson models which are indirectly coupled via the respective baths of conduction electrons. The impurity models are solved at zero temperature using the exact-diagonalization algorithm. We investigate the layer and thickness dependence of the electronic structure in the low-energy regime. Effects due to the finite film thickness are found to be the more pronounced the lower is the film-surface coordination number. For the comparatively open sc(111) geometry we find a strong layer dependence of the quasi-particle weight while it is much less pronounced for the sc(110) and the sc(100) film geometries. For a given geometry and thickness d there is a unique critical interaction strength U _c2 (d) at which all effective masses diverge and there is a unique strength U _c1 (d) where the insulating solution disappears. U _c2 (d) and U _c1 (d) gradually increase with increasing thickness eventually approaching their bulk values. A simple analytical argument explains the complete geometry and thickness dependence of U_c2. U_c1 is found to scale linearly with U_c2. Received 19 August 1998