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1.
The paper gives the values of the optical constants of thin films of germanium obtained by evaporating germanium in a vacuum onto glass slides in the region of 0·35–0·78 for an index of absorptionk and 0·35–2·5 for refractive indexn. The results are compared with the values obtained by other authors and with the values ofn andk for single crystals. It is shown that these values for thin films and single crystals slightly differ quantitatively but agree fairly well qualitatively, which had not been sufficiently the case in previous papers.
, , 0,35 0,78 k 0,35–2,5 n. n, k . , , , , .
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The deformation potential constants and intensity parameters of some of the states and optically induced transitions of gallium impurity in germanium have been determined both experimentally and theoretically. The latter are based on the effective mass wavefunctions of Kohn and Schechter and of Mendelson and James. Reasonably good agreement is found between the experimental and theoretical results.  相似文献   

4.
Optical characteristics of germanium monocrystals with a diameter of 150 and 200 mm grown by the Czochralski and directional crystallization methods were studied. We measured spectral transmittance of the monocrystals in the wavelength range of 2.3–25.0 μm, directional transmission and light scattering in the 2.4–3.0 μm range, and noninhomogeneity of the refractive index of monocrystals by the interference technique at 3.39 μm. The measurements were performed on antimony-doped germanium monocrystals with a diameter of 200 mm and thickness of 15 mm (grown by the directional crystallization method) and 18 mm thick (grown by the Czochralski method). Measurements were also performed on a germanium monocrystal with a diameter of 150 mm and thickness of 15 mm grown by the Czochralski method without adding a ligand. The measurement results revealed different optical quality of monocrystals, expressed in the nature and amount of refractive index inhomogeneity, which imposes restrictions on the use of blanks.  相似文献   

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The optical properties of thick sputtered films (~30μ) of amorphous Ge, grown with different substrate temperatures (0ˇ-T sˇ-350°C), were obtained between 0·05 and 4·5 eV by a combination of reflectance, transmittance and ellipsometric measurements. The refractive index at 0·15 eV decreases monotonically with increasing T s, or equivalently, with increasing density, and is 4·13±0·05 eV in the highest density films. The absorption edge is approximately exponential (102?α?104 cm?1) but shifts monotonically to higher energy and increases in slope with increasing T s. Similarly, the peak in ε2 grows by about 10% and shifts by about 0·15 eV to higher energies, reaching a maximum of about 23 at 2·90±0·05 eV in the high density films. The peak in the transition strength ω2ε2 occurs at 4·2±0·2 eV in all films, but increases in magnitude with increasing T s. The sum rules for n eff(ω) and ε0,eff(ω) are evaluated for ▄ω?5 eV and vary monotonically with T s. These trends are neither compatible with Galeener's void resonance theory nor with changes in the oxygen content of the films, determined by the examination of absorption peaks at 0·053 eV and 0·09 eV. An explanation, suggested here and expanded in I, is based on the observed changes in the structure of the network and voids.  相似文献   

7.
A previously proposed ellipsometric technique for determining the refractive indices, extinction indexes, and thicknesses of metal nanofilms at optical measurements in air has been implemented for nickel films. The optical constants found for nickel, n 2 = 2.04 ± 0.05 and k 2 = 3.75 ± 0.05 (almost = 632.8 nm), are in agreement with the results of measurements in high vacuum. The technique proposed makes it possible to measure film thicknesses in the range of 10–30 nm with an error as small as 1 nm. However, for nickel films thinner than 10 nm, the experimental data differ significantly and deviate more strongly from the calculated values, in contrast to titanium films. Possible reasons for the discrepancy between the calculated and experimental data are discussed.  相似文献   

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In this Letter, we have demonstrated significant electric field induced(EFI) optical rectification(OR) effects existing in the surface layers of germanium(Ge) and measured the distributions of EFI OR signals along the normal directions of surface layers of Ge samples. Based on the experimental results, the ratios of the twoe-order susceptibility components χ2 effTzzz∕χe2 effTeffective secondzxxfor Ge(001), Ge(110), and Ge(111) surface layers can be estimated to be about 0.92, 0.91, and 1.07, respectively. The results indicate that the EFI OR can be used for analyzing the properties on surface layers of Ge, which has potential applications in Ge photonics and optoelectronics.  相似文献   

10.
We have observed additional lines, shifted in both directions relative to the frequency of the bulk phonon of Ge, in the Raman scattering spectra from optical phonons in germanium quantum dots. The observed phonon modes are shown to be due to the straining of the quantum dots as a result of the lattice mismatch of the Ge and Si matrices. The observed frequency shifts, with allowance for optical-phonon localization effects, make it possible to determine the sizes of the regions with different strain states in the quantum dots. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 4, 279–283 (25 August 1999)  相似文献   

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Spontaneous emission and photoconductivity of germanium with gallium impurity are studied for determining the energy spectrum of hole states in this material in which radiation can be induced as a result of transitions of holes between these states. Holes were excited by electric field pulses with a strength up to 12 kV/cm at T = 4.2 K under uniaxial compression of samples up to 12 kbar. It has been found that hole emission spectra for transitions between resonant and local states of the impurity have a structure identical to the photoconductivity and absorption spectra. Transitions from resonance states, which are associated with the heavy hole subband, have not been detected. It has been found that in an electric field lower than 100 V/cm, a compressed crystal emits as a result of transitions of heavy holes. In a strong electric field (1–3 kV/cm), emission is observed in the energy range up to 140 meV, and transitions with emission of TA and LO phonons appear in such a field. The emission spectra under pressures of 0 and 12 kbar differ insignificantly. Hence, it follows that the contributions from heavy and light holes in a strong electric field are indistinguishable.  相似文献   

13.
G K M Thutupalli 《Pramana》1979,12(4):347-353
The optical constants of single crystal GaAs were determined in the range 0.6 to 4.2 eV, using Tomlin’s method and are compared in the light of the earlier results obtained using the Kramers-Krönig analysis method.  相似文献   

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The optical constants of the chemical compounds constituting the atmospheric aerosol were investigated in a wide spectral range. This investigation indicates that higher values of the refractive index than that of water must be used in calculations of the optical characteristics of the aerosol in the IR region. The main absorption bands of the aerosol in the atmospheric windows are determined.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 91–97, May, 1972.  相似文献   

16.
We present first-principles calculations for the optical properties of germanium dioxide in the rutile structure. The electronic band structure has been calculated self-consistently within the local density approximation using the full-potential linearized augmented plane wave method. The electronic band structure shows that the fundamental energy gap is direct at the center of the Brillouin zone. The determinant role of a band structure computation with respect to the analysis of the optical properties is discussed.  相似文献   

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A new ellipsometric technique for optical measurements of the refraction and extinction indices and thickness of nanosized metal-titanium films in air is proposed and implemented. It is shown that the determination of optical constants of titanium films by measuring the ellipsometric parameters Ψ and Δ for a light beam incident upon the metal/substrate interface through the substrate of fused silica allows one to obtain optical constants of the metal, which correlate well with the results of the most reliable measurements performed in vacuum chambers. In this case, one can additionally determine the thickness and refractive index of the natural oxide film on the titanium surface. The obtained values of the optical constants of titanium, n 2 = 3.42 ± 0.05 and k 2 = 3.75 ± 0.05 (λ = 632.8 nm), agree well with the results of the measurements made in vacuum. The proposed technique makes it possible to measure the thicknesses of titanium films within the range 7–30 nm with an accuracy of 0.7 nm. The technique is tested on titanium films deposited onto fused silica substrates obtained by vacuum thermal evaporation. The possible error of determining the thickness due to various additional factors is estimated. The results of ellipsometric measurements of the thickness are compared with the data obtained from parallel measurements of electric resistance of the films.  相似文献   

19.
In this paper a study of optical constants of titanium and silicon dioxide films prepared in Balzers BAK 600 and BA 510 conventional high-vacuum apparatus is described. Both the dispersion and the geometrical thickness were determined from normal reflectance spectrum by adapted general algorithm of the statistical interpretation of measured data. The dependence of optical constants on oxygen pressure for both materials and the evaporation rate dependence for titanium dioxide were obtained. The time changes of these constants were also measured.  相似文献   

20.
Optical constants of polymer coatings in the infrared   总被引:1,自引:0,他引:1  
The refractive indices and absorption coefficients of fluorocarbon, polymethyl methacrylate, and polyimide were measured in the wavelength range of 2–12 μm. The reflection losses of KRS-5 and CsI windows were reduced successfully by coating fluorocarbon polymers on the surfaces.  相似文献   

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