二极管伏安特性曲线测试电路的改进

指出了文献中所给出的伏安法测二级管特性曲线电路存在的问题，并给出了改进电路。     

电桥法测二极管的伏安特性

电桥法测二极管的伏安特性高伟（安徽芜湖师专物理系２４１００８）电桥法测电阻一种是公认的较精确地测量电阻的方法．本文介绍利用电桥平衡原理测量二极管的伏安特性的电路，能明显提高测量的准确度．一、羽量电路原理二极管伏安特性的坝量是普通物理学的基础实验之一，...     

用伏安法测绘二极管伏安特性的研究

本提出用伏安法测绘二极管伏安特性曲线的一种电路新接法,用该接法测量时,不需修正即可完全消除电表内阻的影响。     

伏安法测量实验中系统误差的处理

1测量电路及实验原理在选择电流表内接电路时,设伏特表读数为U,电流表读数为I,测测量值Rx为:Rx=U/I=R+RA(1)可见,Rx>R图1电路图即:R=Rx-RA(2)式中R为待测电阻阻值,RA为电流表内阻。若能精确地提供RA的值,根据式(2)可准确计算阻值R。由于电流表内阻在不同的量程下不同,而且受实验环境的影响,因此,RA不能靠实验室提供,需要在实验中测量得到。如图1所示,合上K1、K2,在伏特表、电流表中读取数据:U1、U2、I,则:RA=(U1-U2)/I(3)事实上,这是测量微小电压降的方法。实验中,电流表的内阻较小,故电流表两端的电压降很小,用上述方法可以…     

伏安法测量系统误差的讨论

一、减小测电阻值的系统误差1；对两种电路的比较按图1电路，安培表外接时算得的电阻为而榕同2由路．字馆书内按时宜得由阳＊待测阻值R应介于这两个电路的实验值之间2．实验方法根据上述，可提出一种实验方法．分别用图1和图2两种电路各洲一组U、了数据，各画出一条伏一安直线（代表每组数据的平均测量值），如图3中的①和②所示．待测阻值R对应的一条直线应夹在这两条直线之间，其确切位置不可知，折衷的办法就是取处于中位的直线，如图3中的虚线所示，从该直线的斜率即可求出R值．这要比只取①或只取②的单一测量结果更接近于其值，系统…     

用伏安法测电阻实验中电路的选择

在“用伏安法测电阻”实验中，要么采用电流表内接电路（图1），要么采用电流表外接电路（图2）．因为电流表的内阻RA并不为零，电压表的内阻RV也不是无限大，无论采用哪一种电路进行测量，系统误差总是不可避免的，这就是所谓的“方法误差”．当待测电阻阻值R满足RWR＾时，用内接法测量所带来的误差可忽略不计．”当待测电阻阻值R满足RV＞＞R时，用外接法测量所带来的误差可忽略不计．但在一般阻值的情况下，应该选用何种电路来进行测量才能使误差较小呢？本文将从误差分析入手来进行讨论，最后得出一个联接方式选择的判断方法．1内接…     

新视角审视补偿法测电阻电路

从欧姆定律、伏安法的视角审视各种补偿法测电阻电路,实际上各种补偿法测电阻电路都是和伏安法一样按欧姆定律方式设计的。实践表明按从消除伏安法测电阻电路系统误差逐步推演出完全补偿法的测电阻电路,再讲授补偿法的原理的思路设计教学,收到了很好的效果。     

伏安法测电阻的方法研究

研究了初中伏安法测电阻的电路选择方法和数据处理方法,完善了电路选择方法,拓展和规范了现行教科书的数据处理方法;依据标配电表和待测电阻参量给出了运用电路选择方法的可行结果,结合实测数据给出了运用数据处理方法的合理结果,提出了相应的教学建议.     

用电流源法测量非线性元件的伏安特性

本文报导了一种新的用于测量非线性元件伏安特性的实验电路，该电路采用的是以电流为信号变量的电流模式测量电路，并分析与比较了该电路与传统的以电压作为信号变量的电压模式测量电路的不同．     

用替代法消除伏安法测电阻的系统误差

分析了伏安法测电阻的不足,介绍了采用替代法,在保证电路不变的情况下,用标准电阻箱夫代电压表、电流表或被测电阻,从而直接得出Ｒｖ,Ｒ∧,Ｒ,再求出Ｒ真。     

单相并联谐振变换器输出LC滤波器参数优化

采用在静止直角坐标系中构造虚拟正交电路的方法,推导了单相并联谐振变换器在直接正交(D-Q)旋转坐标系中的等效电路,求解了该等效电路的传递函数;通过仿真验证所推导的D-Q等效电路能够准确地代表原变换器电路。基于阻抗匹配的原则,通过D-Q等效电路的传递函数对单相并联谐振变换器的输出LC滤波器参数进行了优化,达到了输出脉冲电压上升沿时间小于50μs、过冲小于5%、调节时间小于100μs和纹波小于5%的预期指标,验证了采用该方法来优化并联谐振变换器输出LC滤波器参数的可行性。     

单相并联谐振变换器输出LC滤波器参数优化

采用在静止直角坐标系中构造虚拟正交电路的方法,推导了单相并联谐振变换器在直接正交(D-Q)旋转坐标系中的等效电路,求解了该等效电路的传递函数;通过仿真验证所推导的D-Q等效电路能够准确地代表原变换器电路。基于阻抗匹配的原则,通过D-Q等效电路的传递函数对单相并联谐振变换器的输出LC滤波器参数进行了优化,达到了输出脉冲电压上升沿时间小于50 s、过冲小于5%、调节时间小于100 s和纹波小于5%的预期指标,验证了采用该方法来优化并联谐振变换器输出LC滤波器参数的可行性。     

The voltage-current relationship and equivalent circuit implementation of parallel flux-controlled memristive circuits

A flux-controlled memristor characterized by smooth cubic nonlinearity is taken as an example, upon which the voltage-current relationships （VCRs） between two parallel memristive circuits - a parallel memristor and capacitor circuit （the parallel MC circuit）, and a parallel memristor and inductor circuit （the parallel ML circuit） - are investigated. The results indicate that the VCR between these two parallel memristive circuits is closely related to the circuit parameters, and the frequency and amplitude of the sinusoidal voltage stimulus. An equivalent circuit model of the memristor is built, upon which the circuit simulations and exper/mental measurements of both the parallel MC circuit and the parallel ML circuit are performed, and the results verify the theoretical analysis results.     

QUANTUM FLUCTUATIONS IN A MESOSCOPIC DAMPED LC PARALLEL CIRCUIT IN DISPLACED SQUEEZED FOCK STATE

We study the quantum effects of a damped LC parallel circuit considering its different performance from an RLC series circuit in classical physics. The damped LC parallel circuit with a source is quantized and the quantum fluctuations of magnetic flux and electric charge in the circuit in displaced squeezed Fock state are investigated. It is shown that, as in the RLC series circuit, the fluctuations only depend on the squeezing parameter and the parameters of the circuit components in the damped LC parallel circuit, but the effects of the circuit components on the fluctuations are different in the two circuits.     

Mapping equivalent approach to analysis and realization of memristor-based dynamical circuit

A novel mapping equivalent approach is proposed in this paper, which can be used for analyzing and realizing a memristor-based dynamical circuit equivalently by a nonlinear dynamical circuit with the same topologies and circuit parameters. A memristor-based chaotic circuit and the corresponding Chua’s chaotic circuit with two output differentiators are taken as examples to illustrate this approach. Equivalent dynamical analysis and realization of the memristor-based chaotic circuit are performed by using Chua’s chaotic circuit. The results indicate that the outputs of memristor-based chaotic circuit and the corresponding outputs of Chua’s chaotic circuit have identical dynamics. The proposed approach verified by numerical simulations and experimental observations is useful in designing and analyzing memristor-based dynamical circuits.     

基于电流反馈放大器的网格多涡卷混沌电路设计与实现

提出了一种仅用电流反馈放大器实现网格多涡卷混沌系统的方法.首先用电流反馈放大器设计非线性函数电路;再用电流反馈放大器设计网格多涡卷混沌电路,根据混沌吸引子参数确定电路参数,由于电流反馈放大器具有较好的频率特性和端口特性,使该电路的工作频率高、电路结构简单、使用元件少;最后,通过电路仿真验证该方法的可行性.     

A memristor oscillator based on a twin-T network

A novel inductance-free nonlinear oscillator circuit with a single bifurcation parameter is presented in this paper. This circuit is composed of a twin-T oscillator, a passive RC network, and a flux-controlled memristor. With an increase in the control parameter, the circuit exhibits complicated chaotic behaviors from double periodicity. The dynamic properties of the circuit are demonstrated by means of equilibrium stability, Lyapunov exponent spectra, and bifurcation diagrams. In order to confirm the occurrence of chaotic behavior in the circuit, an analog realization of the piecewise-linear flux-controlled memristor is proposed, and Pspice simulation is conducted on the resulting circuit.     

Analysis of the effect of stray capacitance on a charge/discharge-based electrical capacitance tomography system

The measurement circuit of electrical capacitance tomography (ECT) system mainly includes CMOS switches, C/V conversion circuit and Data processing circuit. In order to improve the image reconstruction quality, conversion circuit is very necessary to the small capacitance measurement circuit. A charge/discharge measurement circuit is one of the most suitable for the C/V conversion circuit in ECT. The stray capacitance between the measurement electrodes and earth can be large and have an effect on the capacitance measurement. This paper analyzes this effect, taking into account the ON-resistance of the COMS switch, the unit gain frequency of op-amp, and gain error in the measurement circuit. Finally, it is shown that if the range of stray capacitance is 150 ± 60 pF, overall error would be estimated. Comparing the effects of the circuit parameters, this charge/discharge-based capacitance is effectively stray-immune. It is a more efficient analysis to C/V circuit in ECT and offers a great benefit to information processing.     

Multiple attractors and periodic transients in synchronized nonlinear circuits

I study a pair of synchronized nonlinear circuits which may be periodic or chaotic. The circuits are synchronized by a one-way driving signal from the drive circuit to the response circuit. Because the nonlinearities are symmetric about zero, the drive circuit has two periodic attractors. When the value of a bifurcation parameter is above a certain threshold, the response circuit also has two periodic attractors, one in-sync with the drive and one out-of-sync. Below the threshold, the drive circuit still has two attractors but the response circuit has only one attractor, the in-sync attractor. If the response circuit is started in the basin of attraction of the former out-of-sync attractor, a long periodic transient (many cycles long) is seen.     

Chaotic memristive circuit: equivalent circuit realization and dynamical analysis

In this paper, a practical equivalent circuit of an active flux-controlled memristor characterized by smooth piecewise-quadratic nonlinearity is designed and an experimental chaotic memristive circuit is implemented. The chaotic memristive circuit has an equilibrium set and its stability is dependent on the initial state of the memristor. The initial state-dependent and the circuit parameter-dependent dynamics of the chaotic memristive circuit are investigated via phase portraits, bifurcation diagrams and Lyapunov exponents. Both experimental and simulation results validate the proposed equivalent circuit realization of the active flux-controlled memristor.