Bifurcations in a System of Interacting Fronts

We show that the bifurcation scenario in a high-dimensional system with interacting moving fronts can be related to the universal U-sequence which is known from the symbolic analysis of iterated one-dimensional maps. This connection is corroborated for a model of a semiconductor superlattice, which describes the complex dynamics of electron accumulation and depletion fronts. By a suitable Poincaré section we reduce the dynamics to a low-dimensional iterated map, for which in the most elementary case the bifurcation points can be determined analytically.     

GaAs光阴极量子效率分布测量

基于负电子亲和势GaAs光阴极直流高压注入器,设计并搭建了国内首套光阴极量子效率分布测量系统。该系统利用单透镜实现逐点扫描,并采用LabVIEW进行控制和数据读写。实验表明,该系统单点采样时间小于2.3s,分辨率优于0.32mm。初步测量了GaAs阴极的量子效率分布,观察到量子效率分布及其衰减的不均匀性,量子效率较高区域的衰减速率更低。     

Second-harmonic generation of semiconductor quantum dots studied by near-field optical microscopy

We present a theoretical study of optical second-harmonic generation(SHG) of symmetric semiconductor quantum dots (QDs) excited by the near field of the tip in a near-field scanning optical microscope. We show that the usual optical transition selection rules for the SH nonlinear interaction between the tip field and the QD are broken when the tip is scanned over the QD, because the tip field varies rapidly over the QD domain. It is also demonstrated that the tip-position dependence of the SH signal essentially maps the spatial distribution of the tip field.     

Arsenic dopant mapping in state-of-the-art semiconductor devices using electron energy-loss spectroscopy

Knowledge of the dopant distribution in nanodevices is critical for optimising their electrical performances. We demonstrate with a scanning transmission electron microscope the direct detection and two-dimensional distribution maps of arsenic dopant in semiconductor silicon devices using electron energy-loss spectroscopy. The technique has been applied to 40–45 nm high density static random access memory and to n–p–n BiCMOS transistors. The quantitative maps have been compared with secondary ion mass spectrometry analysis and show a good agreement. The sensitivity using this approach is in the low 10¹⁹ cm^?3 range with a spatial resolution of about 2 nm.     

Resonant X-ray diffraction of self-assembled epitaxial systems: From direct to complementary chemical information

In this work we depict schematically the use of resonant (anomalous) X-ray diffraction as a tool to directly probe strain and composition of self-assembled semiconductor islands. By employing a direct analysis at the Eu L₃ edge its composition gradient is quantified for EuTe:SnTe capped islands. Projection maps are proposed to visualize the results, providing an alternative capability to infer quantum dot properties. A more complex methodology is applied to the study of InP:GaAs islands, in which complementary anomalous measurements are performed. For this system the number of samples analyzed allows us to extract the activation energy for Ga adatoms diffusion from the substrate to the islands.     

Improving the stability of distributed-feedback tapered master-oscillator power-amplifiers

We report theoretical results on the wavelength stabilization in distributed-feedback master-oscillator power-amplifiers which are compact semiconductor laser devices capable of emitting a high brilliance beam at an optical power of several Watts. Based on a travelling wave equation model, we calculate emitted optical power and spectral maps in dependence on the pump of the power amplifier. We show that a proper choice of the Bragg grating type and coupling coefficient allows optimization of the laser operation, such that the laser emits a high intensity continuous wave beam for a wide range of injection currents.     

Phase transitions in experimental systems

Scaling functions of the support and of the measure have been used to characterize the scaling behavior of a dynamical system. While scaling functions for the scaling of the measure, ƒ(), have been calculated for a number of experimental systems, examples of scaling functions φ(λ) for the scaling of the support are difficult to obtain. In this contribution, we report on a phase-transition-like effect of an experimental p-doped germanium semiconductor sample. It is found that the results obtained from the dynamical scaling function agree with those obtained by Horita et al. from model maps, indicating that scaling functions for the scaling of the support are a powerful method of characterizing experimental dynamical systems.     

Chaos dynamics in vertical-cavity surface-emitting semiconductor lasers with polarization-selected optical feedback

We study experimentally and numerically the dynamic states of chaotic oscillations in vertical-cavity surface-emitting semiconductor lasers (VCSELs) with polarization-selected optical feedback. We identify the regimes of fully-developed chaotic states, low-frequency fluctuations (LFFs), and coexistent states of LFFs and stable oscillation for the variations of the bias injection current and the optical feedback ratio. In particular, coexistent states of LFFs and stable oscillations are observed at higher optical feedback ratio and lower bias injection current. We draw maps of dynamic states in the space of the bias injection current and the optical feedback ratio. The qualitative agreement between the theory and the experiment is found.     

"Artificial atoms" in magnetic fields: wave-function shaping and phase-sensitive tunneling

We demonstrate the possibility to influence the shape of the wave functions in semiconductor quantum dots by the application of an external magnetic field B(z). The states of the so-called p shell, which show distinct orientations along the crystal axes for B(z) = 0, can be modified to become more and more circularly symmetric with an increasing field. Their changing probability density can be monitored using magnetotunneling wave function mapping. Calculations of the magnetotunneling signals are in good agreement with the experimental data and explain the different tunneling maps of the p(+) and p? states as a consequence of the different sign of their respective phase factors.     

Equilibrium properties of the layer α-ZnIn2S4

Summary The ternary ZnIn₂S₄ is a semiconductor with a number of layerlike polytypes coordinated by both tetrahedral and octahedral bonds. The equilibrium properties of the α-phase are investigated self-consistently by using normconserving pseudopotentials. In particular we study in the Hellmann-Feynman scheme the relationship between atomic displacements and crystal stability by minimizing the forces acting on the anions. The resulting charge density maps are analysed and discussed. Work partially supported by Italian CNR through: Progetto finalizzato Sistemi informatici a Calcolo Parallelo under Grant n. 89.00006.69.     

Dependence of the experimental stability diagram of an optically injected semiconductor laser on the laser current

An experimental study of the dynamical properties of a semiconductor laser subjected to external optical injection is presented. The effect of the laser current on the dynamical regions as found in an experiment is reported on for the first time. The nonlinear dynamical regions are mapped in the parameter plane consisting of the detuning between lasers and the injection strength, by utilizing a method of condensing the information in output spectra to two-dimensional images. Corresponding maps for different values of the slave laser current are recorded. The recordings present conclusive experimental evidence that the overall locations of the dynamical regions scale with respect to the relaxation–oscillation frequency and the injection strength relative to the free running laser power. The results further support the theoretical prediction that the linewidth-enhancement factor is the parameter which most strongly affects the dynamics. Locally, specific chaotic regions are found to grow for higher operating points of the slave laser. A complete characterization of the parameters that enter the rate-equations for the visible output AlGaInP laser used in this experiment is performed.     

Magnetic-field-dependent excitation transfer in quantum wells of diluted magnetic semiconductor

We studied the excitation transfer in double quantum wells of a diluted magnetic semiconductor using a scanning near-field optical microscope at 7 K in external magnetic fields up to 9 T. In each quantum well, local energy minima are generated by local fluctuation of layer thickness and doping concentration of magnetic components. Excitons relax into the local energy minima and transfer between the minima via near-field optical interactions even across quantum wells toward stable sites at which to localize. We measured the intensity maps of near-field photoluminescence with spatial resolution estimated to be 30 nm under varying external magnetic fields. The measurement position reproducibility was confirmed by scanning tunneling microscope images. Analysis of the maps derived the magnetic-field dependence of the typical size of exciton-localization sites for each quantum well. Based on these results, we investigated the excitation transfer between the two quantum wells lying in different layers of the double quantum well system, and showed that the exciton transfer takes place at the two specific applied magnetic-field intensities that result in the crossing of Zeeman-split energy levels of the two different wells. We concluded that both the localization and the inter-quantum-well transfer of excitons are able to be controlled by an external magnetic field. This provides the basis for functional devices operating without any wiring.     

Reciprocal space mapping

This review covers the recent advances in reciprocal space mapping. The experimental techniques as well as the theoretical and conceptual developments are discussed. The advantages of reciprocal space mapping over the conventional single scan X-ray scattering methods become clear from the examples presented. Extracting the additional information from mapping in reciprocal space maps has led to a deeper understanding of materials. Imperfect materials benefit enormously from these methods. Near perfect materials also indicate weak diffuse scattering that can now be interpreted in terms of defects, etc., whereas with single scans the influence is difficult to observe and separate from other features. Reciprocal space maps can be collected with both high and low angular resolution diffractometers, depending on the application, although a combination of resolutions may be necessary. It is also growing in importance in the analysis of materials using specular reflectometry. High-resolution reciprocal space mapping is not restricted to good crystalline quality. Examples of reciprocal space mapping are given for semiconductors, metals, ceramics and biological samples. For semiconductor materials, reciprocal space mapping has now become almost routine in the study of lattice relaxation in thin layers and in the assessment of the “quality” of materials. Combinations of mapping with topography and precision lattice parameter determination are also discussed. The latter part of this review discusses the advantages of three-dimensional reciprocal space mapping, which takes the analysis further. With this method the full three-dimensional shapes in reciprocal space can be studied.     

Chaos generation by a hybrid integrated chaotic semiconductor laser

We design a hybrid integrated chaotic semiconductor laser with short-cavity optical feedback. It can be assembled in a commercial butterfly shell with just three micro-lenses. One of them is coated by a transflective film to provide the optical feedback for chaos generation while insuring regular laser transmission. We prove the feasibility of the chaos generation in this compact structure and provide critical external parameters for the fabrication by theoretical simulations. Rather than the usual changeless internal parameters used in previous simulation research, we extract the real parameters of the chip by experiment. Moreover, the maps of the largest Lyapunov exponent with varying bias current and feedback intensity K_(ap) demonstrate the dynamic characteristics under different external-cavity conditions. Each laser chip has its own optimal external cavity length(L) and feedback intensity(K_(ap)) to generate chaos because of the different internal parameters. We have acquired two ranges of optimal parameters(L = 4 mm, 0.12 K_(ap) 0.2 and L = 5 mm, 0.07 K_(ap) 0.12) for two different chips.     

Fully analytical evaluation of optical gain coefficient in bulk semiconductors in quasi-equilibrium free-carrier approximation

In this letter, a new analytical method is presented to calculate of the semiconductor optical gain coefficient. This method is particularly suitable for theoretical analyses to determine the dependence of semiconductor gain on the total carrier density and temperature in the semiconductor lasers. Also, the optical gain functions for semiconductor optical gain coefficient are presented analytically. The analytical evaluation is verified with numerical methods, which illustrates the accuracy of these obtained analytical expressions.     

Ensembles of indium phosphide nanowires: physical properties and functional devices integrated on non-single crystal platforms

A new route to grow an ensemble of indium phosphide single-crystal semiconductor nanowires is described. Unlike conventional epitaxial growth of single-crystal semiconductor films, the proposed route for growing semiconductor nanowires does not require a single-crystal semiconductor substrate. In the proposed route, instead of using single-crystal semiconductor substrates that are characterized by their long-range atomic ordering, a template layer that possesses short-range atomic ordering prepared on a non-single-crystal substrate is employed. On the template layer, epitaxial information associated with its short-range atomic ordering is available within an area that is comparable to that of a nanowire root. Thus the template layer locally provides epitaxial information required for the growth of semiconductor nanowires. In the particular demonstration described in this paper, hydrogenated silicon was used as a template layer for epitaxial growth of indium phosphide nanowires. The indium phosphide nanowires grown on the hydrogenerated silicon template layer were found to be single crystal and optically active. Simple photoconductors and pin-diodes were fabricated and tested with the view towards various optoelectronic device applications where group III–V compound semiconductors are functionally integrated onto non-single-crystal platforms.     

Efficient fiber-to-waveguide coupling through the vertical leakage from a microring

A fiber-to-waveguide coupler is proposed to efficiently couple light from a single-mode fiber into a submicrometer semiconductor waveguide for integration with optoelectronic circuits. A microring with a specific refractive index is designed on the top of the semiconductor waveguide. The gradual vertical leakage from the microring forms steady coupling into the semiconductor waveguide. Coupling efficiency up to 93% is demonstrated using the three-dimensional finite-difference time-domain method. A tapered-waveguide or microring structure can be used to convert the lateral-mode size for coupling light into a single-mode semiconductor waveguide.     

半导体激光器光束准直系统的功率耦合效率

在长距离无线光通信中，接收点光功率密度与光束发散角平方呈反比关系，为了获得小的发散角和大的功率耦合效率，要求准直系统有较大的数值孔径(NA)，但数值孔径过大会增加像差，因此合理设计功率耦合效率与准直系统的数值孔径就非常重要。该文对半导体激光器光束准直系统中功率耦合效率进行了研究，给出了半导体激光器光束功率耦合效率与k(孔径半径与孔径处等效光束半径之比)的关系表达式，并结合激光器光束准直系统，给出了半导体激光器光束功率耦合效率与准直系统数值孔径的关系表达式。该研究结论对于半导体激光器光束准直系统设计具有参考作用。     

Enhancement of ring network in presence of optimized semiconductor optical amplifiers

By utilization of optimized semiconductor optical amplifiers, the design of ring network is achieved for a large number of nodes with reasonable quality and zero power penalty. The gain fluctuation occurs due to variation in parameters of the semiconductor optical amplifier for ring network. It is evaluated that nodes go on decreasing with increase in gain saturation of the semiconductor optical amplifier.     

半导体可饱和吸收镜作为被动锁模吸收体实现超短脉冲可见激光发展状况

介绍了当前国际上流行的一种用于固体激光器被动锁模以获得皮秒和飞秒宽度脉冲的新型半导体吸收体 半导体可饱和吸收镜的基本原理和制作方法。描述了利用半导体可饱和吸收镜和倍频晶体获得可见光超短脉冲激光方面的研究现状,指出半导体可饱和吸收镜的使用将会加速超短脉冲三基色激光器的研制进程。