BaSO4Sm^2＋晶体的光谱及光子选通烧孔效应

首次报道—种新的无机光子造通光谱烧孔材料——BaSO_4:Sm~ (2+)的烧孔效应.并给出了有关光谱性质的实验结果.     

光子选通光谱烧孔的全息检测与图像存贮

报道在有机光子选通光谱烧孔材料苯基四苯并卟啉锌/芳晴系统中，进行全息光谱烧孔和图像存贮的实验结果．实验表明全息烧孔极大地提高了光谱孔的检测灵敏度和信噪比．通过全息光子选通光谱烧孔，成功地进行了光子选通型的频率选择的多幅全息图存贮，得到清晰的图像再现 关键词：     

Zntbp—CA／PhR体系的光子选通光谱烧孔

首次报道一种新的光子选通交谱烧孔体系Ｚｎｔｂｐ－ＣＡ／ＰｈＲ２０Ｋ温度下，在对应的非均匀展宽吸收带内的不同波长处实现了一系列光子选通光谱烧孔。文中就孔的温度效应，寿命，光擦除性能以及选通比值Ｇ等方面作了不同深度的讨论。     

Zntbp－CA／PhR体系的光子选通光谱烧孔

首次报道一种新的光子选通光谱烧孔体系Ｚｎｔｂｐ－ＣＡ／ＰｈＲ２０Ｋ温度下，在对应的非均匀展宽吸收带内的不同波长处实现了一系列光子选通光谱烧孔．文中就孔的温度效应、寿命、光擦除性能以及选通比值Ｇ等方面作了不同深度的讨论．     

频域中固体多重光谱烧孔研究

报道固体选通光谱多重光谱烧孔研究的新进展，分析影响多生烧孔形成的一些主要因素，首次报道了在有机材料ＺｎｔｂＰ／ＣＡ／ＰｈＲ的非均匀加宽线内获得一次连续烧出１００多光谱孔的结果，还进一步报道用穿带激光获得更窄线宽的光谱烧孔的情况。     

光子选通多重光谱烧孔中的光致填孔机制

报道了给体－受体电子转移型材料ｚｉｎｃ－ｔｅｔｒａｐｈｅｎｙｌｂｅｎｚｏｐｏｒｐｈｒｉｎ＋ｚｉｎｃ－ｔｅｔｒａｐｈｅｙｌ ｂｅｎｚｏｔｒｉｂｅｎｚｏｐｏｒｐｈｒｉｎ／ｐｈｙｄｒｏｘｙｂｅｎｚａｌｄｈｙｄｅ／ｐｏｌｙ（ｍｅｔｈｙｌ）ｍｅｔｈａｃｒｙｌａｔｅ的光子选通多重烧孔过程。结果表明要获得高质量的多重光谱孔，从短波往长波的逐次烧孔更为有效。其影响来自与波长有关的光致填孔现象，造成该填孔的主要机制     

高信号背景比的持久性偏振光谱烧孔

用偏振光谱方法对有机固体材料频域存贮材料进行单光子和双光子的选通光谱烧孔，获得了高的信号背景（噪声）比（ＳＢＲ）。文章介绍偏振光谱烧孔原理和实验上得到高信号背景比的方法和结果，展示了偏振光谱烧孔技术在高分辨光谱和频域信号存贮应用的良好前景。     

不同选通条件下对光谱烧孔孔深的研究

本文从理论上分析了低激发密度下，选通光分别为脉冲光和连续光时，孔深随时间的变化，得到可以通过脉冲光烧孔、连续光选通的方法缩短烧孔时间．应用ＢａＦＣｌ０．５Ｂｒ０．５：Ｓｍ２＋（２％）进行了实验，分析了单脉冲烧孔的孔深．     

新型永久光谱烧孔材料及机理研究

利用永久光谱烧孔(Persistent spectral hole burning(PSHB))可使光学信息存储密度提高三个数量级以上[1].这一重要应用前景激励科学家探索和寻求具有较高的非均匀(inhomogeneous)线宽与均匀(homogeneous)线宽之比(决定存储密度)和可擦除性(erasable)新型光谱烧孔材料.有机材料易于进行分子设计和组装,是较理想的光存储(optical storage)材料.     

SrFCl0.5Br0.5:Sm2+的延迟荧光现象

本文报道了ＳｒＦＣｌ０．５Ｂｒ０．５：Ｓｍ＾２＋材料中Ｓｍ＾２＋的荧光光谱，并由光谱中几个较强的荧光峰的时间分辨光谱得到荧光的寿命。通过对连续光激发的荧光谱与脉冲光激发的荧光谱的比较发现了延迟光现象。并对不同延时时间的光谱作了比较，并进一步分析了延迟荧光产生的原因是来源于各辐射荧光的上能级粒子数布局方式的不同造成的。     

Up-conversion luminescence research of Er（0.5）：ZBLAN material for volumetric display application when excited by 1520nm laser

The up-conversion luminescence of the ZBLAN fluoride glass Er(0.5):ZBLAN, when excited by a 1520 nm semiconductor laser, is studied in this paper. The absorption and common-fluorescence spectra are also measured in order to understand the up-conversion clearly. It is found that there are seven strong up-conversion luminescence lines (406.97^m, 410.42 nm), (521.97^m, 527.56 nm), (542.38^m, 549.27 nm), (654.27^m, 665.70 nm), 801.57^m nm, 819.46 nm, and 840.00 nm, which can be recognized as the fluorescence transitions of ({}^2G^4F^2H)_{9/2}→{}^4I_{15/2},{}^2H_{11/2}→ {}^4I_{15/2},{}^4S_{3/2}→{}^4I_{15/2},{}^4F_{9/2}→{}^4I_{15/2}, {}^4I_{9/2}→ {}^4I_{15/2}, ({}^2G^4F^2H)_{9/2}→{}^4I_{9/2}, and {}^4S_{3/2}→{}^4I_{13/2} respectively. Meanwhile, the small up-conversion fluorescence lines 379.20 nm, 453.10 nm and 490.60 nm are the transitions of {}^4G_{11/2}→{}^4I_{15/2},{}^4F_{5/2}→{}^4I_{15/2} and {}^4F_{7/2}→ {}^4I_{15/2} respectively. It is interesting that the slopes of log F－logP curves, the double-logarithmic variation of up-conversion luminescence intensity F with laser power P, are different from each other for these observed up-conversion luminescence, this being valuable for the volumetric display. Comprehensive discussions find that the {}^4G_{11/2}→{}^4I_{15/2}, (^2G^4F^2H)_{9/2}→{}^4I_{15/2}, (^2H_{11/2}→{}^4I_{15/2},{}^4S_{3/2}→{}^4I_{15/2},{}^4F_{9/2}→ {}^4I_{15/2}), and {}^4I_{9/2}→{}^4I_{15/2} up-conversion luminescences are five-photon, four-photon, three-photon, and two-photon up-conversion luminescences respectively. It is found also that the absorption from ground-state {}^4I_{15/2} level to {}^4I_{13/2} level is very large, which is beneficial to the sequential energy transfer up-conversion to occur.     

Kcl：Pb^2＋和RbCl：Pb^2＋单晶中HD色心的喇曼研究

本文报道KCl:Pb~(2+)和RbCl:Pb~(2+)单晶在温度77K经大剂量X射线辐照后的喇曼测量结果。根据高精度的偏振喇曼数据和最近发展起来的所谓表现型分析方法,确认频移为284cm~(-1)和270cm~(-1)的信号分别为KCl:Pb~(2+)和RbCl:Pb(2+)单晶中H_D色心的C_(1h)(010):A′动力学模振动引起的非弹性散射。     

Li+离子掺杂Gd2O3：Sm3+纳米晶的发光增强

采用燃烧法制备了Gd₂O₃:Sm³⁺和Li⁺离子掺杂的Gd₂O₃:Sm³⁺纳米晶,根据X射线衍射图谱确定所得纳米样品为纯立方相。在室温下,用275 nm和980 nm激发光激发各样品时,可分别观测到Sm³⁺离子的强荧光发射和上转换特征发射,其主发射峰分别位于560,602,650 nm处,分别对应着Sm³⁺离子的⁴G_5/2→⁶H_5/2,⁴G_5/2→⁶H_7/2和⁴G_5/2→⁶H_9/2的电子跃迁,其中以⁴G_5/2→⁶H_7/2跃迁的光谱强度最大。实验表明Li⁺离子的掺入使得Sm³⁺离子的荧光发射强度显著增加。通过对样品的XRD、TEM和激发光谱、发射光谱的研究,分析了引起样品荧光强度变化的原因。     

Eu2+掺杂浓度对Ca2MgSi2O7∶Eu2+荧光粉发光特性的影响

采用化学共沉淀法制备了Ca_2-xMgSi₂O₇:xEu²⁺绿色荧光粉.用X射线衍射仪、荧光分光光度计及光色综合测试系统对Ca_2-xMgSi₂O₇:xEu²⁺绿色荧光粉的相结构、发光性能进行了测试.结果表明:其激发光谱分布在300–480 nm波长范围,谱峰位于389,430 nm处,可以被InGaN管芯产生的360–480 nm辐射有效激发;在波长为430 nm蓝光激发下,其发射光谱谱峰位于531 nm处.Ca_2-xMgSi₂O₇:xEu²⁺绿色荧光粉的发光强度随Eu²⁺掺杂量的增加而增强,当Eu²⁺掺杂量x为0.04时,发光强度达到最大值,而后开始降低,发生浓度猝灭.根据Dexter能量共振理论,浓度猝灭是由电偶极-电偶极相互作用引起的. 关键词： 2MgSi₂O₇∶Eu²⁺')" href="#">Ca₂MgSi₂O₇∶Eu²⁺ 绿色荧光粉 发光特性 白光发光二极管     

BaFBr:Eu2+中的新型色心及其光激励发光

本文报导了BaFBr:EU²⁺晶体中的新型色心,即F₂,F₃和F₄心.F₂、F₃和F₄的吸收带分别位于670—715nm,810—900nm和970—995nm.它们是由F心的凝聚作用而形成的缔合中心.由于这些色心比F心稳定,且它们的吸收带偏离Eu²⁺的发射波长(390nm)更远,故更适合于BaFBr:Eu²⁺光激励发光的研究和开发.     

Cr2+: ZnS和Fe2+: ZnS光谱特性的比较研究

基于密度泛函理论和投影平面波方法,采用第一性原理对比分析了Cr2+: ZnS和Fe2+: ZnS 的电子结构和光学性能。晶体中二价掺杂离子的态密度、能带结构和几何优化由广义梯度近似的PBE描述。Cr2+: ZnS和Fe2+: ZnS的近中红外光谱表明,特征吸收来自于局域激发的d和p-d杂化轨道之间的跃迁,Fe2+: ZnS的中心跃迁能量比Cr2+: ZnS的要低,红移0.34 eV;分别制备了Cr2+: ZnS和Fe2+: ZnS晶体,并测得了Cr2+: ZnS和Fe2+: ZnS的吸收光谱,证实了Fe2+: ZnS的特征吸收峰较Cr2+: ZnS红移0.34 eV。     

The effect of Si surface nitridation on the interfacial structure and electrical properties of (La2O3)0.5(SiO2)0.5 high-k gate dielectric films

Thermal stability, interfacial structures and electrical properties of amorphous (La₂O₃)_0.5(SiO₂)_0.5 (LSO) films deposited by using pulsed laser deposition (PLD) on Si (1 0 0) and NH₃ nitrided Si (1 0 0) substrates were comparatively investigated. The LSO films keep the amorphous state up to a high annealing temperature of 900 °C. HRTEM observations and XPS analyses showed that the surface nitridation of silicon wafer using NH₃ can result in the formation of the passivation layer, which effectively suppresses the excessive growth of the interfacial layer between LSO film and silicon wafer after high-temperature annealing process. The Pt/LSO/nitrided Si capacitors annealed at high temperature exhibit smaller CET and EOT, a less flatband voltage shift, a negligible hysteresis loop, a smaller equivalent dielectric charge density, and a much lower gate leakage current density as compared with that of the Pt/LSO/Si capacitors without Si surface nitridation.     

Progress in science and technology on photostimulable BaFX:Eu (X=Cl, Br, I) and imaging plates

Imaging plate (IP) is a two-dimensional detector of ionizing radiation utilizing photostimulable BaFX:Eu²⁺ (X=Cl, Br, I). First type was developed about 20 years ago. As for the mechanism of the photostimulated luminescence (PSL), a lot of arguments have been done after the presentation of the first model by Takahashi et al. In principle, the model is supported by the recent papers.

In the meantime, the performance of IPs is drastically improved. Then, the computed radiography and the radioluminography (RLG) systems, which take advantage of the excellent feature in linearity and high sensitivity of IPs, were developed that became an inevitable equipment for medical diagnostics and scientific research. The late Professor Shigeo Shionoya greatly contributed to analysis of the PSL mechanism and development of the RLG technology.