铜薄膜电子-声子耦合系数的实验研究

电子元件的超微型化和高集成化,对金属互连线的导热性能提出极高的要求;同时,新型高性能光电材料的开发,又需要尽可能降低受光激发电子与声子之间的耦合。电子、声子的相互作用,对于能量转换与传递过程微观机理的研究至关重要。这些载能粒子的作用时间都在飞秒-皮秒量级,本文采用飞秒激光瞬态热反射方法,对铜薄膜中微观粒子作用过程进行了飞秒量级的实验研究。通过对实验系统精细调节,得到了理想的信号曲线,在此基础上测量了不同泵浦光功率下沉积在硅基底上厚度为60 nm铜薄膜的电子-声子耦合系数,测量结果为(11～12)×10~(16)W/(m~3K),和理论值14×10~(16)W/(m~3K)较为接近,并且不随泵浦光强发生变化。     

声子角动量与手性声子

在经典的物理学理论中,声子广泛地被认为是线极化的、不具有角动量的.最近的理论研究发现,在具有自旋声子相互作用的磁性体系(时间反演对称性破缺)中,声子可以携带非零的角动量,在零温时声子除了具有零点能以外还带有零点角动量;非零的声子角动量将会修正通过爱因斯坦-德哈斯效应测量的回磁比.在非磁性材料中,总的声子角动量为零,但是在空间反演对称性破缺的六角晶格体系中,其倒格子空间的高对称点上声子具有角动量,并具有确定的手性;三重旋转对称操作给予声子量子化的赝角动量,赝角动量的守恒将决定电子谷间散射的选择定则;此外还理论预测了谷声子霍尔效应.     

弹性波在固-固结构矩形声子晶体中的传输特性

利用一维固-固结构矩形声子晶体中弹性波横向受限的条件,推导出弹性波在其中各个模式满足的关系式,利用它研究了弹性波各模式的特性。并用转移矩阵研究了弹性波的传输特性随模式量子数和边长的变化规律。得出了一些不同于一维固-固结构非受限声子晶体的新特征,即一维矩形声子晶体的禁带由模式量子数确定,禁带的频率中心和频率宽度与模式量子数和边长有关。     

一维固-固结构圆柱声子晶体中弹性波的传输特性

利用一维固-固结构圆柱声子晶体中弹性波横向受限的条件,推导出弹性波在其中各个模式满足的关系式,利用它研究了弹性波各模式的特性.并利用转移矩阵研究了弹性波的传输特性随模式量子数和圆柱半径的变化规律.得出了一些一维固-固结构圆柱声子晶体的新特征,即弹性波的传输特性由模式量子数和圆柱半径决定. 关键词： 圆柱声子晶体 弹性波 受限 模式     

声子气的黏度

声子是介电固体中导热过程的主要载体,研究声子的黏性对正确预测纳米材料中的非傅里叶导热等现象有着重要意义.本文从热质理论出发,基于涨落耗散理论导出了声子气黏度的表达式:ηh=hv/3πλα,其中ηh表示声子气的黏度,v_a为声子平均频率,λ为声子波长,α为材料热扩散系数。预测了单晶硅在300 K时的声子气黏度,其参考值为4.8×10~(-9)Pa·s。并且与基于声子水动力学模型和气体动理论模型的声子气黏度结果进行比较,发现本文模型的结果比声子水动力学模型的结果大2个量级,而比动理论模型小5个量级。     

固-固接触界面热传输研究

提出了固-固接触热传导接触界面层的概念并进行了解释。接触界面层的建立,把微结构的散射和辐射热传导机制统一于界面层内,通过对接触界面层、接触界面层的厚度和界面层热导率等的讨论,初步揭示了接触界面层热传导的机制。在界面层微观传热的机制上,建立了接触界面层热阻预测模型,并把模型预测接触热阻值与扩散失陪模型(DMM)以及实验值进行了比较。结果显示该模型克服了DMM模型预测值偏低的缺陷,这些将对接触界面层的微尺度热分析有一定的帮助。     

激子-声子相互作用对三阶非线性光学性质的影响

在对激子不作任何近似的条件下,对强耦合激子声子系统中非线性光学性质在理论上进行了研究,结果表明当信号光场频率与激子频率的失谐量等于光学声子的频率时,系统的非线性光学吸收和克尔系数显著增大,从而证明了激子声子的强相互作用对介质的非线性光学性质的影响相当大。并且,与对激子作代松马利夫(Dyson-Maleev)变换近似和玻色近似的结果进行仔细的比较,发现对激子不作近似时,这种影响将进一步增大。     

固-流结构矩形掺杂声子晶体的滤波特性

利用一维固-流结构矩形掺杂声子晶体中弹性波横向受限的条件,推导出弹性波在一维固-流结构矩形掺杂声子晶体中各个模式满足的关系式.研究弹性波各模式的缺陷模随模式量子数和杂质厚度的变化规律.利用缺陷模随模式量子数的变化规律可以实现多通道滤波,利用缺陷模随杂质厚度的变化规律可以实现调谐滤波.     

Phonon Transmission and Thermal Conductance in Fibonacci Wire at Low Temperature

We investigate the phonon transmission and thermal conductance in a general Fibonacci quasicrystal by the model of lattice dynamics and the technique of transfer matrix. It is found that quasiperiodic distribution of masses may greatly destroy the phonon transport at both low and high frequencies and thus may affect the thermal conductance. The thermal conductance increases with temperature at low temperatures and displays saturation with further increase of the temperature. Such saturation behaviour is preserved even when the mass ratio of atoms in the Fibonacci chain is changed.     

高温超导体中的电-声子相互作用

1911年 ,卡末林·昂内斯在金属汞中发现了超导电性 .在之后的很长一段时间内 ,人们对其中的机理认识很少 .直到 195 7年 ,ＢＣＳ理论的发表才为超导电性奠定了理论基础 .传统理论认为 ,在转变温度Ｔｃ 以下 ,超导库珀对的密度随温度降低而不断增加 ,形成库珀对所需的电子 -电子吸引不是瞬时的和超距的 ,而是靠晶格振动的中介 (电子吸收或发射声子 ) .ＢＣＳ理论的实验验证实现于 2 0世纪 6 0年代 .俄罗斯物理学家Ｅｌｉａｓｈｂｅｒｇ以方程组的形式将电 -声子相互作用纳入ＢＣＳ理论 ,并对超导体的声子谱作出预言 .之后 ,ＭｃＭｉｌｌａｎ…     

Phonon transmission and thermal conductance in one-dimensional system with on-site potential disorder

The role of on-site potential disorder on phonon transmission and thermal conductance of one-dimensional system is investigated. We found that the on-site potential disorder can lead to the localization of phonons, and has great effect on the phonon transmission and thermal conductance of the system. As on-site potential disorder W increases, the transmission coefficients decrease, and approach zero at the band edges. Corresponding, the thermal conductance decreases drastically, and the curves for thermal conductance exhibit a series of steps and plateaus. Meanwhile, when the on-site potential disorder W is strong enough, the thermal conductance decreases dramatically with the increase of system size N. We also found that the efficiency of reducing thermal conductance by increasing the on-site potential disorder strength is much better than that by increasing the on-site potential?s amplitude.     

异侧非重叠三封闭端量子波导中的声子输运与热导

研究了异侧非重叠三封闭端量子波导中的声学声子传输和热导率性质。结果表明：由于激发模的产生,总传输系数在整数约化频率的时发生跳跃;各个激发模所产生的温度条件不一样,温度越高,被激发的模越多,并且高阶模对热导的影响较小;声子传输和热导性质与不连续结构的形状和位置有直接的关系,声子传输和热导性质对量子线的温度环境相当敏感。     

二极管端面抽运固体激光器晶体棒与热沉接触热导研究

二极管端面抽运固体激光器中,圆棒晶体采用金属热沉夹持并散热,晶体侧面受到的压力呈非轴对称分布.建立了此状态下晶体棒与热沉间无热界面物质、采用厚度为平均间隙厚度和远大于平均间隙厚度的热界面物质三种情况下接触热导模型.针对前两种模型,采用截断高斯模型和塑性形变模型,讨论了接触热导与装配压力、等效均方根粗糙度的关系.建立了晶体棒与热沉的接触散热模型,对高斯型热耗分布,采用有限元法得到了无热界面物质和采用铟箔作为热界面物质时晶体棒温度的空间分布.结果表明:无热界面物质时,晶体棒与热沉间接触热导随圆心角变化较大,其 关键词： 激光二极管端面抽运固体激光器 热效应 有限元法 接触热导     

Thermal conductance in quantum wire with two obstacles

Based on the scattering-matrix method, the influence of obstacles on the thermal conductance in quantum wire was investigated. Three types of obstacles are employed in our calculation. We present a detailed study of the thermal conductance as a function of distance between two obstacles and temperature. The results show that there is qualitative difference in the dependence of the thermal conductance versus width between two obstacles for different temperatures. We also find that the calculated thermal conductance increases with the width W of quantum wire in all cases.     

异侧非重叠三封闭端量子波导中的声子输运与热导

研究了异侧非重叠三封闭端量子波导中的声学声子传输和热导率性质.结果表明:由于激发模的产生,总传输系数在整数约化频率的时发生跳跃;各个激发模所产生的温度条件不一样,温度越高,被激发的模越多,并且高阶模对热导的影响较小;声子传输和热导性质与不连续结构的形状和位置有直接的关系,声子传输和热导性质对量子线的温度环境相当敏感.     

Solid-gas interface thermal conductance for the thermal barrier coating with surface roughness: The confinement effect

The yttria-stabilized zirconia (YSZ) is a famous thermal barrier coating material to protect hot-end components of an engine. As a characteristic feature of the YSZ, the surface roughness shall play an important role in the interface thermal conductance between the YSZ and gas, considering that the gas is typically at an extremely high temperature. We investigate the effect of the surface roughness on the thermal conductance of the YSZ-gas interface with surface roughness described by nanoscale pores on the surface of the YSZ. We reveal two competitive mechanisms related to the microstructure of the pore, i.e., the actual contact area effect and the confinement effect. The increase of the pore depth will enlarge the actual contact area between the YSZ and gas, leading to enhancement of the solid-gas interface thermal conductance. In contrast to the positive actual contact area effect, the geometry-induced confinement effect greatly reduces the interface thermal conductance. These findings shall offer some fundamental understandings for the microscopic mechanisms of the YSZ-gas interface thermal conductance.     

Phonon drag resistivity of potassium

The phonon drag resistivity for potassium is calculated by solving the Boltzman equations for both the electrons and phonons as opposed to the conventional method of Ziman where the phonon equation is not considered. By an application of the Schwartz inequality we can show that the drag resistivity in the present formalism is larger than that obtained by the conventional method. We substantiate this result by numerical calculation for potassium at very low temperatures, using a realistic phonon spectrum obtained from inelastic neutron scattering data. Parts of this paper were presented as partial fulfilment for a Ph.D. degree at Cornell University. The work was partially supported by CSIR funding.     

Quantum conductance through a uniform scatterer in a narrow-wire semiconductor

The quantum conductance for electrons scattering from a uniform scatterer in a narrow-wire semiconductor is calculated. Instead of getting the conductance directly from the calculation of transmission coefficient, we calculate the reflection coefficient instead. The transmission coefficient is then calculated by using the conservation law, T=I−R. This alternative method can avoid the instability of the conductance obtained by including more evanescent modes for a finite-range scatterer in a narrow-wire semiconductor. This method is applied to a semi-infinite strip potential barrier and a rectangular potential barrier in a narrow wire. The quantum stepwise conductance is obtained in both cases. For a repulsive rectangular potential barrier, there are oscillations in each stepwise conductance. For an attractive rectangular potential barrier, there exist multiple quasi-bound states below the sub-band energies which can cause the drop of the quantum conductance. The effect of the continuum quasi-bound states diminishes as the energy of the incident electron increases, but the influence of the discrete quasi-bound states still persists.