An efficient Schottky-varactor frequency multiplier at millimeter waves. Part I: Doubler

The efficiency of millimeter wave doublers with a wide tunable bandwidth was studied. The efficiency depends on the varactor parameters and the embedding impedances seen by the diode at fundamental and harmonic frequencies. Millimeter wave doublers were simulated with a nonlinear analysis program to find optimum embedding impedances for a given diode. Also the sensitivity of the efficiency to various diode and circuit parameters was evaluated. A scaled model was constructed in order to experimentally optimize the impedances. For experimental verification a doubler from 40–58 GHz to 80–116 GHz was constructed. The highest efficiency measured was 45% at 94 GHz with 5 mW input power. The highest efficiency obtained with 20 mW input power was 38%.     

An efficient Schottky-varactor frequency multiplier at millimeter waves. Part II: Tripler

The multiplication efficiency of millimeter wave triplers was studied. In the case of a commercially available Schottky-varactor, the tripler efficiency versus pump power, bias voltage, and embedding impedances at the fundamental and harmonic frequencies was simulated using a nonlinear analysis program. A scaled model of a waveguide mount was used to experimentally optimize the impedances. For experimental verification a tripler from 33–39 GHz to 99–117 GHz was constructed. The highest efficiency measured was 28% at 107 GHz with 5 mW input power. The highest efficiency obtained with 30 mW input power was 18%.     

Generation of Submillimeter-Wave Radiation with GaAs Tunnett Diodes and InP Gunn Devices in a Second or Higher Harmonic Mode

Efficient second-harmonic power extraction was demonstrated recently with GaAs tunnel injection transit-time (TUNNETT) diodes up to 235 GHz and with InP Gunn devices up to 325 GHz. This paper discusses the latest theoretical and experimental results from second-harmonic power extraction at submillimeter-wave frequencies and explores the potential of using power extraction at higher harmonic frequencies to generate continuous-wave radiation with significant power levels at frequencies above 325 GHz. Initial experimental results include output power levels of more than 50 W at 356 GHz from a GaAs TUNNETT diode in a third-harmonic mode and at least 0.2–5 W in the frequency range 400–560 GHz from InP Gunn devices in a third or higher harmonic mode. The spectral output of these submillimeter-wave sources was analyzed with a simple Fourier-transform terahertz spectrometer and, up to 426 GHz, with a spectrum analyzer and appropriate harmonic mixers. Initial experimental results from a GaAs/AlAs superlattice electronic device at D-band (110–170 GHz) and J-band (170–325 GHz) frequencies are also included.     

An Integrated Sideband-Separating SIS Mixer Based on Waveguide Split Block for 100 GHz Band with 4.0–8.0 GHz IF

We have developed an integrated sideband-separating SIS mixer for the 100 GHz band based on the waveguide split block. The measured receiver noise temperatures with 4.0–8.0 GHz IF are less than 60 K in the LO frequency range of 90–110 GHz, and a minimum value of around 45 K is achieved at 100 GHz. The image rejection ratios are more than 10 dB in the frequency range of 90–110 GHz. We have installed the sideband-separating SIS mixer into an atmospheric ozone-measuring system at Osaka Prefecture University and successfully observed an ozone spectrum at 110 GHz in SSB mode. This experimental result indicates that the sideband-separating SIS mixer is very useful for astronomical observation as well as atmospheric observation.     

Experimental investigation of millimeter wave Gunn oscillator circuits in circular waveguides

Millimeter wave Gunn oscillator circuits using circular waveguides for 33–50 GHz and 75–110 GHz frequency bands are described. These oscillators are simpler to construct at millimeter wavelengths compared to the conventional rectangular waveguide circuits. The effect of various circuit parameters on the oscillator frequency and output power has been experimentally studied. The CW power and mechanical tuning range obtained from the circular waveguide Gunn oscillators are found to be comparable and sometimes even better than those obtained with conventional rectangular waveguide circuits using the same Gunn device.     

Novel 53/106 GHz Dual-Band MMW LC Oscillator Implemented in SiGe BiCMOS Technology

In this Paper, we present a fully integrated millimeter wave LC voltage-controlled oscillator (VCO), which employs a novel topology, operating at dual-band frequency of 53.22 GHz-band and 106.44 GHz-band. The low-phase noise performance of –107.3 dBc/Hz and –106.1 dBc/Hz at the offset frequency of 600 kHz, –111.8 dBc/Hz and –110.6 dBc/Hz at the offset frequency of 1 MHz around 53.22 GHz and 106.44 GHz are achieved using IBM BiCMOS-6HP technology, respectively. Two tuning ranges, of 52.7 - 53.8 GHz and 105.4 - 107.6 GHz for the proposed LC VCO are obtained. The output voltage swing of this VCO is around 1.8 V_p-p at the operation frequency of 53.22 GHz and 0.45 V_p-p at 106.44 GHz; the total power consumption is about 16.5 mW. To our knowledge, this is the first oscillator which operates at dual-band frequency above 50 GHz with the best preformance.     

A dielectric rod waveguide coupled with metal rectangular waveguide

Measurements have been done in the millimeter wave region on a composite waveguide which comprises a dielectric rod waveguide connecting two metal rectangular waveguides. Such a waveguide has been used by us in a Josephson harmonic mixer installed in a small metal cryostat, to prevent the thermal invasion from outside environment and to transmit both signal and LO waves with small losses. The measured transmission loss, that is caused mainly by the coupling loss between metal rectangular waveguides (TE₁₀ mode) and a dielectric rod waveguide (HE₁₁ mode), has been less than 2dB in the frequency range of 52–104 GHz.     

Frequency stabilization of a frequency-doubled 197.2 THz distributed feedback diode laser on rubidium 5S1/2→7S1/2 two-photon transitions

A 197.2 THz (1520.2 nm) ITU-T grid distributed feedback (DFB) diode laser is frequency stabilized at 197.198 THz by 1ocking its second harmonic (SH) signal on the rubidium 5S_1/2→7S_1/2 two-photon transition at 394.396 THz (760.1 nm). With 100 mW from the DFB diode laser and amplifying by an erbium-doped fiber amplifier, we obtain an SH power of 15 mW using a periodically poled lithium niobate (PPLN) waveguide frequency doubler. The stability was 2×10⁻¹¹ (10 s), corresponding to a frequency variation of 4 kHz at 1520.2 nm. Our scheme provides a compact and high performance frequency reference in the communication band.     

Investigation of a heterodyne receiver with open structure mixer at 324 GHz and 693 GHz

The performance of a submillimeter heterodyne receiver using an HCOOH laser local oscillator and an open structure mixer with a Schottky barrier diode has been optimized for 693 GHz. Working at room temperature a single sideband (SSB) system noise temperature of 7,300 K, a mixer noise temperature of 6,100 K and a conversion loss of 12 dB has been achieved. The same receiver system has been investigated at 324 GHz using an HCOOD laser local oscillator yielding a noise temperature of 3,100 K (SSB), a mixer noise temperature of 2,400 K (SSB) and a conversion loss of 10 dB (SSB). An acousto-optical spectrometer has also been constructed, with 1024 channels and a channel-bandwidth of 250 kHz. The system NEP per channel was 2.5×10^–17 W/Hz^1/2 at 324 GHz and 5.0×10^–17 W/Hz^1/2 at 693 GHz.