Use of thermal imaging to characterize laser light reflection from thermoplastics as a function of thickness,laser incidence angle and surface roughness

Laser light reflection during the laser transmission welding (LTW) of thermoplastics has the potential to overheat and/or cause unintentional welding of adjacent features of the part being welded. For this reason, and in order to assess how much light is being absorbed by the transparent part (after measurement of the light transmitted through the transparent part), it is important to be able to quantify the magnitude and distribution of reflected light. The magnitude and distribution of the reflected light depends on the total laser input power as well as its distribution, the laser incidence angle (angle between the normal to the transparent part surface and the laser beam), the laser light polarization as well as the surface and optical properties of the transparent part. A novel technique based on thermal imaging of the reflected light was previously developed by the authors. It is used in this study to characterize the magnitude and distribution of reflected light from thermoplastics as a function of thickness (1–3.1 mm), laser incidence angle (20–40°) and surface roughness (0.04–1.04 μm). Results from reflection tests on nearly polished nylon 6 (surface roughness between 0.04 and 0.05 μm) have shown that, for the various thicknesses tested (1–3.1 mm), the total reflection was larger than the specular top surface reflection predicted via the Fresnel relation. From these observations, it is conjectured that, in addition to top surface reflection, the bulk and/or bottom surface also contribute to the total reflection. The results also showed that reflection decreased slightly with increasing thickness. As expected, for the p-polarized light used in this study, the reflection decreased with increasing angle of incidence for the range of angles studied. It was also found that when the surface roughness was close to zero and when it was close to the wavelength of the input laser beam (i.e. 940 nm), the reflectance values were close and reached a minimum between these two roughness values.     

Antenna length and polarization response of antenna-coupled MOM diode infrared detectors

This work focuses on the fabrication and response of dipole antenna-coupled metal–oxide–metal diode detectors to long-wave infrared radiation. The detectors are fabricated using a single electron beam lithography step and a shadow evaporation technique. The detector’s characteristics are presented, which include response as a function of incident infrared power and polarization angle. In addition, the effect of dipole antenna length on detection characteristics for 10.6 μm radiation has been measured to determine resonant lengths. The response of the detector shows a first resonance at a dipole length of 3.1 μm, a second resonance at 9.3 μm, and third at 15.5 μm. The zeros intermediate to the resonances are also evident.     

Picosecond laser cutting and drilling of thin flex glass

We investigate the feasibility of cutting and drilling thin flex glass (TFG) substrates using a picosecond laser operating at wavelengths of 1030 nm, 515 nm and 343 nm. 50 μm and 100 μm thick AF32^®Eco Thin Glass (Schott AG) sheets are used. The laser processing parameters such as the wavelength, pulse energy, pulse repetition frequency, scan speed and the number of laser passes which are necessary to perform through a cut or to drill a borehole in the TFG substrate are studied in detail. Our results show that the highest effective cutting speeds (220 mm/s for a 50 μm thick TFG substrate and 74 mm/s for a 100 μm thick TFG substrate) are obtained with the 1030 nm wavelength, whereas the 343 nm wavelength provides the best quality cuts. The 515 nm wavelength, meanwhile, can be used to provide relatively good laser cut quality with heat affected zones (HAZ) of <25 μm for 50 μm TFG and <40 μm for 100 μm TFG with cutting speeds of 100 mm/s and 28.5 mm/s, respectively. The 343 nm and 515 nm wavelengths can also be used for drilling micro-holes (with inlet diameters of ⩽75 µm) in the 100 μm TFG substrate with speeds of up to 2 holes per second (using 343 nm) and 8 holes per second (using 515 nm). Optical microscope and SEM images of the cuts and micro-holes are presented.     

Superhydrophobic elastomer surfaces with nanostructured micronails

New approaches to the fabrication of microstructures of special shape were developed for polymers. Unusual superhydrophobic surface structures were achieved with the use of flexible polymers and hierarchical molds.Flexible polyurethane?acrylate coatings were patterned with microstructures with use of microstructured aluminum mold in a controlled UV-curing process. Electron microscope images of the UV-cured coatings on polymethylmethacrylate (PMMA) substrates revealed micropillars that were significantly higher than the corresponding depressions of the mold (even 47 vs. 35 μm). The elongation was achieved by detaching the mold from the flexible, partially cured acrylate surface and then further curing the separated microstructure. The modified acrylate surface is superhydrophobic with a water contact angle of 156° and sliding angle of < 10°.Acrylic thermoplastic elastomers (TPE) were patterned with micro?nanostructured aluminum oxide molds through injection molding. The hierarchical surface of the elastomer showed elongated micropillars (57 μm) with nail-head tops covered with nanograss. Comparison with a reference microstructure of the same material (35 μm) indicated that the nanopores of the micro?nanomold assisted the formation of the nail-shaped micropillars. The elasticity of the TPE materials evidently plays a role in the elongation because similar elongation has not been found in hierarchically structured thermoplastic surfaces. The hierarchical micronail structure supports a high water contact angle (164°), representing an increase of 88° relative to the smooth TPE surface. The sliding angle was close to zero degrees, indicating the Cassie–Baxter state.     

Step feature observed in the angular dependence of magnetization switching fields in GaMnAs micro-device

The magnetization switching phenomena of GaMnAs Hall devices have been investigated by using the planar Hall effect (PHE) measurement. Though two different sizes of Hall bar devices, width of 300 and of 10 μm, show very similar Curie temperature, their magnetization switching fields behave significantly different. While the angle dependence of magnetization switching field of the 300 μm device showed typical rectangular shape behavior with an applied magnetic field angle in the polar plot, that of the 10 μm device exhibited large step at 〈1 1 0〉 crystallographic directions, breaking the continuity of the switching field in angle dependence. Such unusual phenomenon observed in the 10 μm device was discussed in terms of the change in magnetic anisotropy by the fabrication of micro-device.     

Micromachined silicon lenses for terahertz applications

Silicon microlenses are a very important tool for coupling terahertz (THz) radiation into antennas and detectors in integrated circuits. They can be used in a large array structures at this frequency range reducing considerably the crosstalk between the pixels. Drops of photoresist have been deposited and their shape transferred into the silicon by means of a Reactive Ion Etching (RIE) process. Large silicon lenses with a few mm diameter (between 1.5 and 4.5 mm) and hundreds of μm height (between 50 and 350 μm) have been fabricated. The surface of such lenses has been characterized using Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM), resulting in a surface roughness of about ∼3 μm, good enough for any THz application. The beam profile at the focal plane of such lenses has been measured at a wavelength of 10.6 μm using a tomographic knife-edge technique and a CO₂ laser.     

10.6 μm Infrared light photoinduced insulator-to-metal transition in vanadium dioxide

Vanadium dioxide has excellent phase transition characteristic. Before or after phase transition, its optical, electrical, magnetic characteristic hangs hugely. It has a wide application prospect in many areas. Now, the light which can make vanadium dioxide come to pass photoinduced phase transition range from soft X-ray to medium infrared light (6.9 μm, 180 meV). However, whether 10.6 μm (117 meV) long wave infrared light can make vanadium dioxide generate photoinduced phase transition has been not studied. In this paper, we researched the response characteristic of vanadium dioxide excited by 10.6 μm infrared light. We prepared the vanadium dioxide and test the changes of vanadium dioxide thin film’s transmittance to 632.8 nm infrared light when the thin film is irradiate by CO₂ laser. We also test the resistivity of vanadium dioxide. Excluding the effect of thermal induced phase transition, we find that the transmittance of vanadium dioxide thin film to 632.8 nm light and resistivity both changes when irradiating by 10.6 μm laser. This indicates that 10.6 μm infrared light can make the vanadium dioxide come to pass photoinduced phase transition. The finding makes vanadium has a potential application in recording the long-wave infrared hologram and making infrared detector with high resolution.     

Densification and microstructure of lead zirconate titanate ceramics fabricated from a triol sol–gel powder

Lead zirconate titanate (PZT) nano-powder was prepared by a triol sol–gel process. X-ray diffraction and transmission electron microscopy results showed that as-synthesized amorphous powder started to crystallize at the calcination temperature above 500 °C. The crystalline powder was formed into pellets and sintered at temperatures between 900 and 1300 °C. Co-existence of tetragonal and rhombohedral phase was observed in all ceramics. Microstructural investigation of PZT ceramics showed that uniform grain size distribution with average grain size of ∼0.8–2.5 μm were received with sintering temperature up to 1200 °C. Further increasing the temperature caused abnormal grain growth with the grain as large as 13.5 μm. An attempt to optimize densification with uniform grain size distribution was also performed by varying heating rate and holding time during sintering. It was found that dense (∼97%) sol–gel derived PZT ceramic with uniform microstructure was achieved at 1100 °C with a heating rate of 5 °C min⁻¹ and 6 h dwell time.     

Controlled fabrication of Si nanostructures by high vacuum electron beam annealing

Silicon nanostructures, called Si nanowhiskers, have been successfully synthesized on Si(1 0 0) substrate by high vacuum electron beam annealing (EBA). Detailed analysis of the Si nanowhisker morphology depending on annealing temperature, duration and the temperature gradients applied in the annealing cycle is presented. A correlation was found between the variation in annealing temperature and the nanowhisker height and density. Annealing at 935 °C for 0 s, the density of nanowhiskers is about 0.2 μm⁻² with average height of 2.4 nm grow on a surface area of 5×5 μm, whereas more than 500 nanowhiskers (density up to 28 μm⁻²) with an important average height of 4.6 nm for field emission applications grow on the same surface area for a sample annealed at 970 °C for 0 s. At a cooling rate of −50 °C s⁻¹ during the annealing cycle, 10–12 nanowhiskers grew on a surface area of 5×5 μm, whereas close to 500 nanowhiskers grew on the same surface area for samples annealed at the cooling rate of −5 °C s⁻¹. An exponential dependence between the density of Si nanowhiskers and the cooling rate has been found. At 950 °C, the average height of Si nanowhiskers increased from 4.0 to 6.3 nm with an increase of annealing duration from 10 to 180 s. A linear dependence exists between the average height of Si nanowhiskers and annealing duration. Selected results are presented showing the possibility of controlling the density and the height of Si nanowhiskers for improved field emission properties by applying different annealing temperatures, durations and cooling rates.     

Improvement of R0A product of type-II InAs/GaSb superlattice MWIR/LWIR photodiodes

The effects of atomic hydrogen and polyimide passivation on R₀A product of type-II InAs/GaSb superlattice photo detectors for cut-off wavelength of both 6.5 μm and 12 μm were investigated. Low temperature current–voltage measurement shows that the use of atomic hydrogen during molecular beam epitaxy growth can improve R₀A product by 260% for 6.5 μm cut-off superlattice diodes and by 50% for 12 μm cut-off ones. The R₀A product of polyimide-passivated diodes with 12 μm cut-off is about 80% higher than those un-passivated ones. Wannier–Stark oscillations at higher reverse bias were observed for polyimide-passivated superlattice diodes with 12 μm cut-off. No Wannier–Stark oscillations were observed for un-passivated superlattice diodes, indicating that surface leakage current dominates in un-passivated diodes, while intrinsic dark current mechanisms such as tunneling and diffusion current dominate in polyimide-passivated diodes.     

Analysis of microscopic parameters of surface charging in polymer caused by defocused electron beam irradiation

The relationship between microscopic parameters and polymer charging caused by defocused electron beam irradiation is investigated using a dynamic scattering-transport model. The dynamic charging process of an irradiated polymer using a defocused 30 keV electron beam is conducted. In this study, the space charge distribution with a 30 keV non-penetrating e-beam is negative and supported by some existing experimental data. The internal potential is negative, but relatively high near the surface, and it decreases to a maximum negative value at z = 6 μm and finally tend to 0 at the bottom of film. The leakage current and the surface potential behave similarly, and the secondary electron and leakage currents follow the charging equilibrium condition. The surface potential decreases with increasing beam current density, trap concentration, capture cross section, film thickness and electron–hole recombination rate, but with decreasing electron mobility and electron energy. The total charge density increases with increasing beam current density, trap concentration, capture cross section, film thickness and electron–hole recombination rate, but with decreasing electron mobility and electron energy. This study shows a comprehensive analysis of microscopic factors of surface charging characteristics in an electron-based surface microscopy and analysis.     

Incident angle and temperature dependence of WSi wire-grid polarizer

The dependences of the incident angle and thermal durability of a tungsten silicide (WSi) wire-grid polarizer were examined. A WSi grating with a 0.5 fill factor, 260 nm depth, and 400 nm period was formed on a Si surface using two-beam interference and dry etching. The TM transmission spectrum of the fabricated element was greater than 60% at the incident angle of θ = 40° (the angle between the incident direction and the perpendicular axis to the grating direction) in the 4–10 μm wavelength range. An extinction ratio of 22.2 dB was achieved at 2.5 μm wavelength. Additionally, results show that this polarizer has higher thermal resistance than that of commercial infrared polarizers. Therefore, this polarizer is effective for taking a polarized thermal image of high temperatures.     

Pulsed infrared radiation transmission through hollow silica waveguides

Transmission measurements of Q-switched and free-running Er:YAG laser radiation, at 2.94 μm and free-running Ho:YAG laser radiation, at 2.06 μm, through hollow silica waveguides of 750 and 1000 μm core diameter were performed. Attenuation measurements were obtained as a function of the laser energy input and as a function of the bending curvature. The output beam quality was also studied as a function of the focal length of the coupling lens and the overall launching conditions for straight waveguides using the appropriate beam profiler.     

Microstructures and nano mechanical properties of the metal tungsten film

The W film was prepared on 1045 steel by magnetron sputtering, with the thickness of 2 μm, its surface and cross-section morphologies were investigated with SEM, and the phase structure was analyzed with XRD. X-ray stress determinator was utilized to measure its residual stress, and the nano-hardness and elastic modulus of the film were surveyed by nano-indentation tester. The results show that the surface of W film is very compact and smooth; the particles arranged regularly, the granularity of the thin film is about 1 μm. The microcracks, cavities and desquamation were not found in the film and interface, and the bonding between the W film and substrate is well. The XRD results showed that the W film had a body-centered cubic structure, the lattice constant: a = 0.316 nm, the growth preferred orientations are (1 1 0) and (2 2 0). The compressive stress (−169 MPa) was found on the surface. The average nano-hardness and elastic modulus of W film are 15.22 GPa, 176.64 GPa, respectively, and the mechanical properties of W film are well.     

Microanatomy and ultrastructure of outer mantle epidermis of the cuttlefish,Sepia esculenta (Cephalopoda: Sepiidae)

This study describes the ultrastructural characteristics of external epidermis of mantle of Sepia esculenta using light and electron microscopy. The epidermis was thicker on the ventral surface than on the dorsal surface, with a higher secretory cell distribution on the ventral surface than on the dorsal surface. The epidermis was a single layer composed of epithelial cells, secretory cells, ciliated cells and neuroglial cells. Epithelial cells were columnar with well-developed microvilli on the free surface, and the microvilli were covered with glycocalyx. The epithelial cells were connected to the neighboring cells by tight junctions and membrane interdigitations of the apico-frontal surface. Well-developed microfilaments were arranged in a vertical direction in the cortical cytoplasm. The secretory cells were categorized into three types (A, B and C) in accordance with the light microscopical characteristics and ultrastructures of the secretory granules. The distribution of these cells was in the following order: Type A > Type B > Type C. SEM observation revealed that the secretory pore size of the Type A secretory cells was approximately 8.6 μm × 12.2 μm. Cytoplasm displayed a red color as the result of Masson's trichrome stain and H–E stain, and contained polygonal granules of approximately 1.2 μm² with a high electron density. The secretory pore size of the Type B secretory cells was approximately 10.1 μm × 12.1 μm. As the results of AB–PAS (pH 2.5) and AF–AB (pH 2.5) reactions, the cytoplasm displayed a red color. The cells contained membrane bounded secretory granules with very low electron density. The secretory pore of the Type C secretory cells was circular shape, and approximately 5.5 μm × 5.5 μm. Cytoplasm was found to be homogeneous under H–E stain and Masson's trichrome stain, and displayed a red color. As the result of AB–PAS (pH 2.5) reaction, the cytoplasm displayed a red color. The electron density of the secretory substance was the highest among the three types of secretory cells. The ciliated cells had a ciliary tuft on the free surface and were distributed throughout the mantle with the exception of the adhesive organs. Neuroglial cells were connected to the basal membrane, epithelial cells, secretory cells and nerve fibers through cytoplasmic process, and contained neurosecretory granules with high electron density within the cytoplasm.     

Ultrasonic imaging using air-coupled P(VDF/TrFE) transducers at 2 MHz

A reflection non-contact ultrasonic microscope system working both in amplitude and phase difference modes at 2 MHz has been developed using an air-coupled concave transducer made of piezoelectric polymer films of poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]. The transducer is composed of three 95 μm-thick P(VDF/TrFE) films stacked together, each of which is activated electrically in parallel by a driving source. The transducer has a wide aperture angle of 140° and a focal length of 10 mm. The measured two-way transducer insertion loss is 80 dB at 1.83 MHz. Despite 20 dB higher insertion loss than that estimated from Mason’s equivalent circuit, we have obtained clear amplitude acoustic images of a coin with transverse resolution of 150 μm, and clear phase difference acoustic images of the rough surface of a paper currency bill with depth resolution of sub-micrometer. Using two planar transducers of P(VDF/TrFE), we have also successfully measured in through-transmission mode the sound velocity and absorption of a 3 mm-thick silicone-rubber plate. The present study proves that, owing to its low acoustic impedance and flexibility, P(VDF/TrFE) piezoelectric film is very useful for high frequency acoustic imaging in air in the MHz range.     

Femtosecond laser processing of indium-tin-oxide thin films

Micro- and nano-scale crystalline indium-tin-oxide (c-ITO) patterns fabricated from amorphous ITO (a-ITO) thin films on a glass substrate using a (low NA 0.26) femtosecond laser pulse that is not tightly focused are demonstrated. Different types of c-ITO patterns are obtained by controlling the laser pulse energies and pulse repetition rate of a femtosecond laser beam at a wavelength of 1064 nm: periodic micro c-ITO dots with diameters of ~1.4 μm, two parallel c-ITO patterns with/without periodic-like glass nanostructures at a laser scanning path and nano-scale c-ITO line patterns with a line width ~900 nm, i.e. ~1/8 of the focused beam׳s diameter (7 μm at 1/e²).     

Effect of grating on IR LED device performance

The electroluminescence in the range of 3–4.5 μm and 6–10 μm from a Sb-based type II interband quantum cascade structure is reported. We measured the light emission from the top surface of the LED device with different grating structures. We used different etch depths for the grating formation. The light–current–voltage (LIV) characteristics measured at both room and cryogenic temperatures show that the device with 45° angle grating and 1.0 μm deep etch onto the GaSb surface has the highest emission power.     

Pump tuned wide tunable noncritically phase-matched ZnGeP2 narrow line width optical parametric oscillator

A line tunable singly resonant noncritically phase matched narrow band width ZnGeP₂ (ZGP) optical parametric oscillator pumped by the output idler radiation from a KTA OPO based on a 20 mm long KTA crystal pumped from a Q-switched Gaussian shaped Nd:YAG laser beam with a grating having grooves density 85 lines/mm has been demonstrated in the spectral ranges of 3–7 μm. The measured threshold of oscillation energy was 10 μJ. The conversion efficiency was 20.5% and slope efficiency of the ZGP OPO was 20% using a 23 mm long ZGP crystal at 26 mm cavity length. Line width of the generated infrared radiation from ZGP OPO was 37–60 nm.     

Ultra-narrow angle-tunable Fabry–Perot bandpass interference filter for use as tuning element in infrared lasers

We have developed a bandpass infrared interference filter with sufficiently narrow bandwidth to be potentially suitable for tuning a self-stabilizing external-cavity quantum-cascade laser (ECQCL) in single-mode operation and describe the process parameters for fabrication of such filters with central wavelengths in the 3–12 μm range. The filter has a passband width of 6 nm or 0.14% with peak transmission of 55% and a central wavelength of approximately 4.0 μm. It can be tuned through over 4% by tilting with respect to the incident beam and offers orders of magnitude larger angular dispersion than diffraction gratings. We compare filters with single-cavity and coupled-cavity Fabry–Perot designs.