Critical behavior of electrical resistivity in amorphous Fe-Zr alloys

Electrical resistivity (ρ) of the amorphous (a-)Fe_100−c Zr _c (c=8.5, 9.5 and 10) alloys has been measured in the temperature range 77 to 300 K, which embraces the second-order magnetic phase transition at the Curie temperature point T _c. Analysis of the resistivity data particularly in the critical region reveals that these systems have a much wider range of critical region compared to other crystalline ferromagnetic materials. The value of T _c and specific heat critical exponent, α has the same values as those determined from our earlier magnetic measurements. The value of α for all the present investigated alloys are in close agreement with the values predicted for three-dimensional (3D) Heisenberg ferromagnet systems, which gives contradiction to the earlier results on similar alloys. It is observed from the analysis that the presence of quenched disorder does not have any influence on critical behavior.     

Vortex glass scaling in Pb-doped Bi-2223 single crystal

We report on study of the vortex liquid in Pb-doped Bi-2223 single crystal using the in-plane resistivity measurements as a function of temperature and magnetic field up to 6 T applied perpendicular to CuO planes. Below T _c at the upper part of superconducting transition we found Arrhenius-like resistivity behavior. With further temperature decrease close to onset of dissipation resistivity shows power law dependence on temperature signaling approaching vortex-glass transition. The critical exponents ν(z − 1) = 4.6 ± 0.5 are found to be field independent within experimental errors. We also present magnetic phase diagram defining region of nonzero critical current for Pb-doped Bi-2223 single crystal.     

Mooij rule and weak localization

It has been shown that the observed correlation between the resistivity ρ of high-resistivity metallic alloys and the sign of the temperature derivative of their resistivity can be explained by taking into account the weak localization effect. This correlation is as follows: the derivative dρ/dT is negative for alloys with resistivity in the range of 150–300 μΩ cm, which corresponds to the mean free path of electrons about the interatomic distance; however, this derivative is positive for alloys with lower resistivities (Mooij rule).     

Insulator-metal transition in the single-crystal high-T c superconductor Bi-2201

Variations in the temperature behavior of resistivity, ρ(T), in the ab plane of the anisotropic single-crystal high-T _c superconductor BiSrCuO (2201 phase) have been observed at the insulator-metal (IM) transition. At low temperatures, as one approaches the transition, the Mott relation for two dimensions, ln ρ ∝ T ^−1/3, changes to ln ρ ∝ T ^−1/2, which corresponds to hopping conduction with a Coulomb gap in the density of states. Negative temperature slopes were revealed in the samples near the transition. Estimates suggest that superconductivity in these samples sets in from the Anderson insulator state. The behavior of the width of the superconducting transition and of the temperature of its onset, T _con, at the IM transition has been studied from measurements of the ac magnetic susceptibility. It is shown that in the vicinity of the IM transition the superconducting transition becomes broader, and the onset of the transition T _con shifts toward higher temperatures. This behavior is attributed to nonuniform superconductivity resulting from formation in the crystal of superconducting droplets with different values of T _c , which is caused by fluctuations in the local density of states due to the inherent disorder in the crystal. In these conditions, superconductivity has a percolation character. Fiz. Tverd. Tela (St. Petersburg) 40, 1190–1194 (July 1998)     

Metal-insulator transition in electron-doped Ba1−x La x MnO3 compounds

Electron-doped (Ba_1−x La _x )MnO₃ compounds were prepared for x=0−0.5. Measurements of X-ray diffraction (XRD) at room temperature and temperature variation of dc electrical resistivity down to 20 K were carried out. Samples with x=0.2–0.5 exhibit metal-insulator (M-I) transition. The maximum M-I transition temperature (T _c) of 289 K was observed for 30% of La doping (x=0.3). XRD patterns of these samples (x=0.2−0.5) were analyzed using Rietveld refinement. These samples are found to be mostly in single-phase form with orthorhombic symmetry (space group Pbnm). We have found strong correlation between Mn-O-Mn bond angles and T _c of M-I transition. The resistivity data below T _c could be fitted to the expression ρ=ρ ₁+ρ ₂ T ² and this shows that double exchange interaction plays a major role even in Mn⁴⁺-rich compound. Above T _c the resistivity data were fitted to variable range hopping and small polaron models.     

Magnetoresistance of HgSeS crystals at hydrostatic pressures of up to 1 GPa

Magnetoresistance (MR) of HgSe_1−x S_x crystals has been studied in the temperature range 4.2–300 K and in magnetic fields up to 12 T under hydrostatic pressures P exceeding the threshold P _t for the structural phase transition. Shubnikov-de Haas quantum oscillations in longitudinal and transverse MR were observed to occur in the original samples at T=4.2 K. For P>P _t, HgSeS crystals transferred to metastable states, which presumably incorporate the high-and low-pressure phases, and in which the oscillations vanished. At the same time the monotonic behavior of MR with magnetic field B, as well as the temperature dependences of resistivity ρ retained the shape characteristic of the original phases. The observed weakening of the dependences of ρ on B and T is attributed to an increase of the temperature independent contribution to ρ caused by phase inclusions and structural defects in the metastable states. It is the corresponding decrease of electron mobility that suppresses the oscillations. Fiz. Tverd. Tela (St. Petersburg) 39, 1717–1722 (October 1997)     

Magnetotransport properties of La<Subscript>0.67</Subscript>Ca<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript> with different grain sizes

The magnetotransport and magnetoresistive (MR) properties of manganese-based La_0.67Ca_0.33MnO₃ perovskite with different grain sizes are reported. The electrical resistivity was measured as a function of temperature in magnetic fields of 0.5 and 1 T. The insulator–metal transition temperature, T _IM, shifted to a higher temperature with the application of the magnetic field. In zero field, T _IM is almost constant (∼271 K) for all samples except for the sample with the largest grain size, where T _IM=265 K. The temperature dependence of resistivity was fitted with several equations in the metallic (ferromagnetic) region and the insulating (paramagnetic) region. The density of states at the Fermi level, N(E _F), and the activation energy of electron hopping were estimated by fitting the resistivity versus temperature curves. The ρ–T ² curves are nearly linear in the metallic regime, but the ρ–T ^2.5 curves exhibit a deviation from linearity. The variable range hopping model and small polaron hopping model fit the data well in the high-temperature region, indicating the existence of the Jahn–Teller distortion that localizes the charge carriers. MR was found to increase with an increase in the magnetic field, an effect which is attributed to the intergrain spin tunneling effect.     

Low-temperature resistivity of YBa2Cu3O6+x single crystals in the normal state

A scan of the superconductor-nonsuperconductor transformation in single crystals of YBa₂Cu₃O_6+x (x≈0.37) is done in two alternative ways, namely, by applying a magnetic field and by reducing the hole concentration through oxygen rearrangement. The in-plane normal-state resistivity ρ_ab obtained in the two cases is quite similar; its temperature dependence can be fitted by a logarithmic law in a temperature range of almost two decades. However, an alternative representation of the temperature dependence of σ_ab=1/ ρ _ab by a power law, typical for a 3D material near a metal-insulator transition, is also plausible. The vertical conductivity σ_c=1/ρ_c followed a power law, and neither σ_c(T), nor ρ_c(T) could be fitted by log T. It follows from the ρ_c measurements that the transformation at T=0 is split into two transitions: superconductor-normal-metal and normal-metal-insulator. In our samples, they are separated in oxygen content by Δx≈0.025. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 11, 834–839 (10 June 1997) Published in English in the original Russian journal. Edited by Steve Torstveit.     

Weak-field Hall resistance and effective carrier density measurements across the metal-insulator transition in Si-MOS structures

The weak-field Hall voltage in Si-MOS structures with different mobility is studied on both sides of the metal-insulator transition. In the vicinity of the critical density on the metallic side of the transition, the Hall voltage is found to deviate by 6–20 % from its classical value. The deviation does not correlate with the strong temperature dependence of the diagonal resistivity ρ _xx (T). In particular, the smallest deviation in R _xy is found in the highest-mobility sample, which exhibits the largest variation in the diagonal resistivity ρ _xx with temperature. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 1, 48–52 (10 July 1999) Published in English in the original Russian journal. Edited by Steve Torstveit.     

Magnetic, electrical, and optical properties of Ca1 ? x Ce x MnO3 ( x ≤ 0.12) single crystals

The magnetic, electrical, and optical properties of Ca_{1 − x} Ce _x MnO₃ (x≤0.12) manganite single crystals are investigated with the aim of revealing the specific features of the multiphase electronic and magnetic state as a function of the cerium concentration and the atmosphere used for growing single crystals. It is found that the concentration dependence of the low-temperature magnetization M(x) of the single crystals is shifted toward the high-concentration range as compared to the corresponding dependence of the polycrystals, which is explained by the predominant cation deficiency. The electrical resistivity and the reflection spectra of the single crystals in the infrared spectral range indicate that charge carriers exhibit a band nature at temperatures close to room temperature. The temperature dependence of the electrical resistivity of the single crystal with x = 0.08, which has the maximum magnetization in the studied series of Ca_{1 − x} Ce _x MnO₃ compounds, unlike polycrystals, exhibits a metallic behavior over the entire temperature range. The G-type antiferromagnetic phase with the Néel and Curie temperatures T _N(G) = T _C = 100 K is characterized by maxima of the electrical resistivity ρ and the magnetoresistance Δρ/ρ = |(ρ₀ − ρ _H )/ρ₀| = 38% in the magnetic field H = 90 kOe. The magnetoresistance Δρ/ρ of the single crystals at cerium concentrations x = 0.10 and 0.12 with variations in temperature exhibit three specific features: near the temperature of charge ordering T _co, near the temperature of the magnetic phase transition to the C-type antiferromagnetic phase T _N(C), and near the temperature of the phase transition to the magnetic charge-ordered phase T _N(MCO). An anomalous temperature dependence of the magnetization is revealed for a single crystal with x = 0.10 grown in oxygen at a pressure of 5 atm, which is explained by the presence of regions with hole conductivity due to cation deficiency. The inhomogeneous electronic and magnetic state is associated with the interrelation of the charge, orbital, and spin orderings. Original Russian Text ? N.N. Loshkareva, A.V. Korolev, N.I. Solin, E.V. Mostovshchikova, S.V. Naumov, N.V. Kostromitina, A.M. Balbashov, 2009, published in Zhurnal éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2009, Vol. 135, No. 1, pp. 98–107.     

Fluctuation-Induced Conductivity of Polycrystalline (Ho–Ce)Ba2Cu3O$_{7-\boldsymbol\delta}$ Superconductor

We report on systematic conductivity fluctuation measurements on samples of Ho_1 − x Ce _x Ba₂Cu₃O_7 − δ with x = 0.00, 0.05, and 0.10. The samples were produced by a standard solid-state reaction method, and the microstructure was analyzed by X-ray diffraction. To identify power-law divergences of the conductivity, the results were analyzed in terms of the temperature derivative of the resistivity dρ/dT and with the logarithmic derivative of the conductivity with respect to temperature − dln (Δσ)/dT. It was observed that the critical temperature decreases and that the transition width increases with increasing Ce doping. The data showed the occurrence of a two-stage transition besides the pairing transition splitting, associated with Ce doping and related with the occurrence of a phase separation. Above the critical temperature, the Gaussian and critical regimes were observed. On approaching the zero resistance state, our results showed a power-law behavior that corresponds to a phase transition from a paracoherent to a coherent state of the granular array.     

Intrinsic inhomogeneities of low-doped lanthanum manganites in the paramagnetic temperature range

The nature of the electrical resistivity for low-doped lanthanum manganites is elucidated. The electrical resistivity is described by the Efros-Shklovskii law (lnρ √ (T ₀/T)^−1/2, where T ₀ √ 1/R _ls) in the temperature range from T* ≈ 300 K ≈ T _C (T _C is the Curie temperature for conducting manganites) to their T _C and is explained by the tunneling of carriers between localized states. The magnetoresistance is explained by a change in the size of localized states R _ls in a magnetic field. The patterns of change in R _ls with temperature and magnetic field strength determined from magnetotransport properties are satisfactorily described in the model of phase separation into small-radius metallic droplets in a paramagnetic matrix. The sizes R _ls and their temperature dependence have been estimated through magnetic measurements. The results confirm the existence of a Griffith phase. The intrinsic inhomogeneities produced by thermodynamic phase separation determine the electrical resistivity and magnetoresistance of lanthanum manganites.     

Structural instability and superconductivity in niobium-titanium alloys

Niobium-titanium is the most widely used technical superconductor. Titaniumrich transition metal alloys, quenched from high temperatures, can generally be retained in the bccβ phase. This phase is metastable and the instability is relieved by a variety of low temperature structural transformations. This aspect has been investigated using x-ray, TEM, low temperature resistivity,T _c and dH _c2/dT studies, in a series of Nb-Ti alloys. The instability has been characterized by the normal state resistivityρ _n and dρ/dT. The commercially used Nb-Ti alloys are Ti rich per atom-wise. This stems basically from the anomalous increase in the normal state resistivityρ _n as the Ti concentration is increased. This is a consequence of a dynamical process through which theβ phase instability tends to be relieved leading to athermal ω precipitation. The resulting anomalous resistivity behaviour can be understood in terms of a ‘two-level system’ model generally invoked for amorphous materials. It has also been possible to induce instability towards athermal ω precipitation in a system spontaneously undergoing a martensitic transformation to become stable. Thus in an alloy of Nb-83 at % Ti, addition of 1% nitrogen has suppressed the martensitic transformation, giving a three-fold increase inρ _n (about 150µΘ cm), the highest known in Nb-Ti so far. The increase in the normal state resistivity has beneficial effects on the upper critical field. From studies on several Nb-Ti alloys, it is inferred that a peak inH _c2(0) occurs at 17–18 tesla at aρ _n value of 100µΘ cm. It is pointed out that in the present commercial alloys, the sequence of thermo-mechanical treatments given to optimizeJ _c, restrictsρ _n, perhaps owing to the partial relieving of the metastability of theβ phase. They are therefore non-optimized with respect toH _c2.     

Normal-state electrical resistivity and superconducting magnetic penetration depth in Eu<Subscript>0.5</Subscript>K<Subscript>0.5</Subscript>Fe<Subscript>2</Subscript>As<Subscript>2</Subscript> polycrystals

We report measurements of the temperature dependence of the electrical resistivity, ρ(T), and magnetic pen-etration depth, λ(T), for polycrystalline samples of Eu_0.5K_0.5Fe₂As₂ with T _c = 31 K. ρ(T) follows a linear temperature dependence above T _c and bends over to a weaker temperature dependence around 150 K. The magnetic penetration depth, determined by radio frequency technique displays an unusual minimum around 4 K which is associated with short-range ordering of localized Eu³⁺ moments. The article is published in the original.     

Effect of hole-hole scattering on the conductivity of the two-component 2D hole gas in GaAs/(AlGa)As heterostructures

The temperature dependences of the zero-magnetic-field resistivity ρ and magnetoresistance of the 2D hole gas in GaAs/(AlGa)As heterostructures are investigated in the temperature interval 0.4–4.2 K. As the temperature T is increased, (i) the resistivity ρ grows with a decreasing derivative dρ/dT, and (ii) the positive magnetoresistance diminishes from about 40% at T=0.4 K to about 1% at T=4.2 K. The results are explained in terms of a temperature-dependent mutual scattering of the holes, accompanied by momentum transfer between two different spin-split subbands. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 2, 101–106 (25 January 1998) Published in English in the original Russian journal. Edited by Steve Torstveit.     

Influence of grain boundaries on resistivity of manganites La1 − x K x MnO3

Results of investigation of resistivity and magnetoresistance of manganites La_{1 − x} K _x MnO₃ (x = 0.050–0.175) are presented. Behavior of resistivity ρ(T) in the paramagnetic and ferromagnetic phases has been described. To describe ρ(T) near the phase-transition temperature, notions of the percolation theory have been used. Two maxima have been found in the dependence ρ(T); their appearance has been attributed to the ceramic nature of the studied samples. The observed increase in magnetoresistance with a decrease in temperature is caused by intergranular spin-polarized tunneling of charge carriers.     

Magnetic and structural phase transitions in the shape-memory ferromagnetic alloys Ni2+x Mn1−x Ga

The results of an experimental investigation of the temperature dependences of the magnetic susceptibility and resistivity in the shape-memory ferromagnetic alloys Ni_2+x Mn_1−x Ga (x=0–0.20) are reported. A T−x phase diagram is constructed on the basis of these data. It is shown that partial substitution of Ni for Mn causes the temperatures of the structural (martensitic) T _M and magnetic T _C (Curie point) phase transitions to converge. In the region where T _C =T _M the transition temperature increases linearly with magnetic field in the range from 0 to 10 kOe. The kinetics of a magnetic-field-induced martensitic phase transition is investigated, and the velocities of the martensite-austenite interphase boundary during direct and reverse transitions are measured. A theoretical model is proposed and the T−x phase diagram is calculated. It is shown that there exist concentration ranges where the magnetic and martensitic transitions merge into a first-order phase transition. The theoretical results are in qualitative agreement with experiment. Zh. éksp. Teor. Fiz. 115, 1740–1755 (May 1999)     

Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method

The electrical conduction mechanisms in various highly resistive GaN layers of Al _x Ga_1−x N/AlN/GaN/AlN heterostructures are investigated in a temperature range between T=40 K and 185 K. Temperature-dependent conductivities of the bulk GaN layers are extracted from Hall measurements with implementing simple parallel conduction extraction method (SPCEM). It is observed that the resistivity (ρ) increases with decreasing carrier density in the insulating side of the metal–insulator transition for highly resistive GaN layers. Then the conduction mechanism of highly resistive GaN layers changes from an activated conduction to variable range hopping conduction (VRH). In the studied temperature range, ln (ρ) is proportional to T ^−1/4 for the insulating sample and proportional to T ^−1/2 for the more highly insulating sample, indicating that the transport mechanism is due to VRH.     

Electrical properties of thin films of Eu2O3 substituted compounds

Europium oxide (Eu₂O₃) substituted compound has been prepared by solid-solid reaction of the powders of Eu₂O₃, BaCO₃ and CuO at 950°C for 16 hours. The thin films have been deposited by high vacuum evaporation technique (vacuum ≈ 10⁻⁶ torr). The variation of current (I) with voltage (V) at room temperature (RT) i.e. 294 K and in ice (273 K) are found to be linear. The variation of electrical resistivity (ρ) with temperature (T) by heating the sample above RT has been determined. Resistivity is found to decrease with increase in temperature. Further the variation of electrical resistivity (ρ) with temperature (T) from 77 K, liquid nitrogen temperature (LNT), to 270 K has also been determined. It is observed that resistivity suddenly becomes zero at around 87 K. Thus the prepared material has superconducting properties with superconducting transition temperature, T _c at 87 K.      

Magnetoresistance of the semiconducting spinelide Cu0.625Ga0.375Cr2Se4 having a low-temperature long-range magnetic order-spin glass transition

A study is reported of the dependence of magnetoresistance Δρ/ρ on the square of magnetization σ ² of the semiconducting spinelide Cu_0.625Ga_0.375Cr₂Se₄, which exhibits a low-temperature transition from long-range magnetic order (LRMO) to the spin glass (SG) state in strong magnetic fields. It is shown that at the freezing temperature T _f the Δρ/ρ(σ ²) relations change their slope, and that below T _f this slope is about one half that for T>T f. This finding, together with the earlier observation that the freezing temperature does not depend on the frequency of the ac magnetic field in which it was measured, suggests that the spin-glass phase consists of spins of individual Cr³⁺ ions, and that the SG-LRMO crossover is a phase transition. Fiz. Tverd. Tela (St. Petersburg) 40, 315–317 (February 1998)