Zur Asymmetrie der Reaktion139La(n,α)136Cs mit polarisierten Neutronen

Experimental and theoretical investigations have been performed to determine the thermal conductivity of hydrogen in the temperature range between 2000 and 7000 °K. For this purpose the radial temperature distributions for various currents and theE-I-characteristic of a low current wall-stabilized hydrogen arc have been measured. In the dark region of the arc outside the bright core the temperature and the thermal conductivity between 2000 and 4500 °K were found by means of the schlieren technique. The electron temperature in the core of the arc results from spectroscopic measurements. The gas temperature has been calculated with a formula, derived from the kinetic theory of gases. Assuming a constant collision integralQ _eH ¹¹ the radial distribution of electric conductivity has been calculated according to Langevin's formula. The valueQ _eH ¹¹ =30·10^?16 cm₂ results by comparing the integrated conductance with the measured one. Since now the radial distribution of power input and the temperatures are known, the thermal conductivity between 4500 and 7000 °K can be determined as well. The total course of the heat conductivity shows a strong peak at the temperature of 3740 °K characteristic for the dissociation process.     

Semiconductor-metal transition in defect lithium cobaltite

The magnetic susceptibility, electrical conductivity, and x-ray photoelectron and x-ray absorption spectra of defect lithium cobaltites of the general formula Li_{1 ? x} CoO₂ are investigated. It is found that, for lithium cobaltites with x > 0.25, the magnetic susceptibility increases abruptly and the conductivity type changes at T ～ 150 K. The assumption is made that the semiconductor-metal transition in defect lithium cobaltite is caused by the increase in the diffusion mobility of lithium ions with an increase in the temperature when there is a correlation between spatial distributions of lithium vacancies and “electron” holes.     

准一维多链无序体系跳跃电导特性

在单电子紧束缚近似下,建立了准一维多链无序体系直流、交流电子跳跃输运模型,通过计算探讨了无序模式、维度效应、温度及外场对其直流、交流电导率的影响.计算结果表明:准一维多链无序体系的直流、交流电导率随着格点能量无序度的增大而减小,非对角无序具有增强体系电子输运能力的作用.随着链数的增加,体系的直流、交流电导率增大,但格点能量无序度较小时,维度效应的影响不明显.在对角无序情况下准一维多链无序体系的交流电导率随温度的升高而增大,而在非对角无序模式下却随温度的升高而减小,但对于直流情况,体系的直流电导率随温度的升     

Diffusion of electrons scattered by short-range impurities in a quantizing magnetic field

Formulas for transverse diffusion and conductivity in a semiconductor are obtained for electrons scattered by neutral impurities in a quantizing magnetic field. The formulas are valid for an impurity potential of arbitrary depth. Based on Kubo’s theory [1], calculations are performed using electron wavefunctions of the problem of single-impurity scattering in a magnetic field [2]. The poles of the scattering amplitude correctly determine electron eigenstates and magnetic impurity states. As a result, an exact expression is found for the dependence of transverse diffusion coefficient D _⊥ on longitudinal electron energy ? due to scattering by short-range (neutral) impurities. The behavior of D _⊥(?) is examined over an interval of magnetic field strength for several values of impurity potential depth. The experimental observability of diffusion and conductivity using IR lasers is discussed.     

Dynamics of spins in semiconductor quantum wells under drift

The dynamics of spins in semiconductor quantum wells under applied electric bias has been investigated by photoluminescence (PL) spectroscopy. The bias-dependent polarization of PL (P_PL) was measured at different temperatures. The P_PL was found to decay with an enhancement of increasing the strength of the negative bias, with an exception occurred for a low value of the negative bias. The P_PL was also found to depend on the temperature. The P_PL in the presence of a transverse magnetic field was also studied. The results showed that P_PL in the magnetic field oscillates under an applied bias, demonstrating that the dephasing of electron spin occurs during the drift transport in semiconductor quantum wells.     

Autosolitons in electron-hole plasma in p-Ge

The self-organization of an electron-hole plasma (EHP) heated by an electric field in pure p-Ge samples at T = 77 K has been studied experimentally. The derived current-voltage characteristics (CVCs) and the distributions of the electric field and IR emission of the hot carriers along the samples show that the segments of a steep rise or the S-shaped segments of the CVCs in samples with n-p junctions are related to the formation of longitudinal thermal-diffusion autosolitons (AS_‖); as a result, thin (d = 2–20 μm in diameter), melted-through current channels appear. Such AS_‖ are formed at high EHP densities (n ≥ 1 × 10¹⁶ cm⁻³), when the electron-hole scattering is dominant, and at electron temperatures T _e = (2–4.5)T ₀ (T ₀ is the lattice temperature). The saturation segments and the N-shaped segments in the CVCs are attributable to the generation of transverse thermal-diffusion high-field autosolitons (AS_⊥) in the form of narrow strata with electric field strengths = 1–20 kV cm⁻¹. High-field AS_⊥ are formed at EHP densities n = 5 × 10¹³−1 × 10¹⁶ cm⁻³, when the electron-phonon scattering is dominant, and at electron temperatures T _e ∼ Θ ≥ 5T ₀ (Θ is the Debye temperature). The generated longitudinal and transverse autosolitons have high temperatures (T _e ≥ 1000 K) and reduced carrier densities and can exist simultaneously in different parts of the sample. Original Russian Text ? M.N. Vinoslavskiĭ, P.A. Belevskii, A.V. Kravchenko, 2006, published in Zhurnal éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2006, Vol. 129, No. 3, pp. 477–492.     

Dispersive effects and correction term in two-mode phonon conduction model for Ge

A complete analysis of the phonon conductivity κ, still lacking in the literature, is presented in the two-mode conduction model for Germanium. First a method is derived from which the correction term κ_c of the Callaway model is separated into its longitudinal and transverse parts and then the effects of strong phonon dispersion and the role of longitudinal and transverse phonons on κ_c are studied. For this purpose we have also proposed some new empirical expressions for the three phonon relaxation rates τ_3ph⁻¹'s which are valid in the entire temperature range. This improvised model, when applied simultaneously to the phonon conductivity data of both normal and enriched Ge, yields some new results. These are (i) κ_c neglected by the earlier workers in the two-mode phonon conduction model, gives a substantial contribution beyond the conductivity maximum and (ii) the longitudinal phonons are the major carriers of heat at high temperature.     

Nuclear spin relaxation in disordered conductors

The relaxation timesT ₁ andT ₂ for nuclear spins interacting with the conduction electrons of disordered metals are calculated. An explicite expression for Warren's relaxation enhancement in terms of electron spectra is obtained, showing in particular that the proportionality ofT ₁ and the conductivity is a universal feature of high resistivity conductors. A formula for an inhomogeneous line width contribution due to disorder induced static Knight shift fluctuations is found. Two dimensional electron spin diffusion is shown to imply various logarithmic line width corrections.     

Effect of Coulomb interaction on the electron spectral density and the transverse conductivity of layered metals

Interaction of electrons with strongly anisotropic plasma oscillations leads to an incoherent contribution to the electron spectral density that does not vanish even for energies distant from the Fermi surface. In the superconducting state, this gives a peak-dip-hump structure analogous to that observed in layered high-T _c superconductors. The incoherent part of the spectral density and electron transitions with the participation of plasmons are responsible for two mechanisms of the occurrence of a finite conductivity in the transverse direction at high voltages or frequencies.     

The influence of Zn ions substitution on the transport properties of Mg-ferrite

The thermoelectric power and electrical conductivity measurements of Zn-substituted Mg-ferrites having the general formula Mg_1−xZn_xFe₂O₄ (where x=0, 0.2, 0.4 and 0.6) were carried out from room temperature to 773 K. The Seebeck coefficient is positive for all the compositions showing that these ferrites behave as p-type semiconductors and the majority charge carriers are holes. The temperature variation of the Seebeck coefficient is also discussed. The Fermi energy (E_F); the density of charge carriers (n) and the carriers mobility (μ) were determined for the studied system. The variation of log σ with reciprocal of temperature shows a discontinuity at Curie temperature. The DC electrical conductivity increases with increasing temperature ensuring the semiconducting nature of the samples. The Curie temperature determined from DC electrical conductivity was found in satisfactory agreement with that determined from initial magnetic permeability measurements. This transition temperature is found to decrease with increasing Zn concentration. The activation energy in the paramagnetic region is found to be lower than that in ferrimagnetic region. The variation of room temperature conductivity with composition indicates that conductivity increases with increasing Zn content. The dependence of the electrical conductivity of Mg-Zn ferrite on Zn content is explained on the basis of the cation distribution.     

Charge density wave transition and nonlinear conductivity in NbS3

We report dc conductivity (σ) measurements on the linear chain compound NbS₃. The temperature dependence of σ indicates a phase trànsition at T_MI = 155 K with strong one-dimensional fluctuations above T_MI. Below T_MI the conductivity is strongly increasing with increasing electric field above a threshold field E_T, and is also strongly frequency dependent. We argue that the nonlinear conductivity is due to sliding charge density waves.     

Thermal conductivity anomalies in GdBa2Cu3O7−x

The measurements of the thermal and electric conductivity of three GdBa₂Cu₃O_7−x samples with different orthorhombic distortions are presented. The electronic component of the total conductivity in the normal state is evaluated. Its value is connected with the magnitude of the change of the slope of the total conductivity λ for the critical temperature T_c.     

Effect of sulfur additive on density of localized states in nanostructures chalcogenide Se95−xSxZn5 thin films

This paper reports the measurement of space charge limited conduction (SCLC) on the fabricated thin films of Se_95−xS_xZn₅ (0.2≤x≤10) in temperature range 313–353 K for the first time. At high electric fields (E∼10⁴ V/cm), the current could be fitted into the theory of space charge limited conduction, in case of uniform distribution of localized states in mobility gap. The homogeneity and surface morphology of thin films were assessed by scanning electron microscopy. The crystalline nature of the thin films was confirmed by powder XRD and the crystallite size was calculated using Scherer's formula. The crystallite size and density of localized states were found to increase with the increase of sulfur concentration. DC conductivity and activation energy were calculated and found to decrease and increase respectively, with the increase of sulfur concentration.     

Mixed cationic effect in the Li/AgB2O3P2O5 glasses

Electrical conductivity data have been determined for a series of x Ag₂O(1 − x)Li₂OB₂O₃P₂O₅ glasses. The progressive substitution of Li⁺ by Ag⁺ considerably decreases the ionic conductivity which shows a minimum at Ag/(Ag + Li) = 0.4. This behaviour becomes intense as the temperature is lowered. This mixed cationic effect is further characterised by activation energy and conductivity relaxation time going to a maxima where conductivity minima occurs. ac conductivity and electric modulus response of those glasses are discussed.     

Nonlinear Hall effect in a quasi-two-dimensional electron system

The nonlinear electron transport in GaAs double quantum wells with two occupied size-quantization levels has been studied at a temperature of 4.2 K in the magnetic fields B < 1 T. It has been found that a sinusoidal electric current I _ac induces the generation of higher harmonics of both longitudinal V _xx (B) and Hall V _xy (B) voltages in the quasi-two-dimensional electron system under consideration. The Hall voltage oscillating in the magnetic field has been shown to appear in the electron system with two occupied size-quantization levels in the presence of microwave radiation and dc electric current I _dc. The experimental data indicate the independent contributions of the diagonal and off-diagonal components of the conductivity tensor to the nonlinear magnetotransport at high filling factors.     

Study on ionic conductivity and dielectric properties of PEO-based solid nanocomposite polymer electrolytes

The ionic conductivity and dielectric properties of the solid nanocomposite polymer electrolytes formed by dispersing a low particle-sized TiO₂ ceramic filler in a poly (ethylene oxide) (PEO)-AgNO₃ matrix are presented and discussed. The solid nanocomposite polymer electrolytes are prepared by hot press method. The optimum conducting solid polymer electrolyte of polymer PEO and salt AgNO₃ is used as host matrix and TiO₂ as filler. From the filler concentration-dependent conductivity study, the maximum ionic conductivity at room temperature is obtained for 10 wt% of TiO₂. The real part of impedance (Z′) and imaginary part of impedance (Z″) are analyzed using an LCR meter. The dielectric properties of the highest conducting solid polymer electrolyte are analyzed using dielectric permittivity (ε′), dielectric loss (ε″), loss tangent (tan δ), real part of the electric modulus (M′), and imaginary part of the electric modulus (M″). It is observed that the dielectric constant (ε′) increases sharply towards the lower frequencies due to the electrode polarization effect. The maxima of the loss tangent (tan δ) shift towards higher frequencies with increasing temperature. The peaks observed in the imaginary part of the electric modulus (M″) due to conductivity relaxation shows that the material is ionic conductor. The enhancement in ionic conductivity is observed when nanosized TiO₂ is added into the solid polymer electrolyte.     

Influence of interlayer coupling and intra-layer Coulomb interaction on electronic transport in bilayer graphene

Calculations of renormalized perpendicular conductivity within Kubo formula employing single particle temperature dependent Green's function formalism for bilayer graphene has been attempted. On the basis of numerical analysis, perpendicular conductivity as a function of temperature, interlayer coupling, onsite Coulomb interaction and carrier concentration per site has been analyzed for both AA- and AB-stacked bilayer graphene. It is found that perpendicular conductivity increases with interlayer coupling and also with temperature at low temperatures while at higher temperatures, there is saturation in perpendicular conductivity. Influences of onsite Coulomb interaction and carrier concentration per site on perpendicular conductivity is just opposite to each other while onsite Coulomb energy suppresses the rate of increase of σ_⊥/σ_⊥0 with temperature, on the other hand increase in carrier density per site enhance this rate significantly. Finally, theoretically obtained results on temperature dependent perpendicular conductivity are viewed in terms of electronic transport data as well as recent theoretical works available in bilayer graphene.     

Exchange of transverse plasmons and electrical conductivity of neutron star cores

We study the electrical conductivity in magnetized neutron star cores produced by collisions between charged particles. We take into account the ordinary exchange of longitudinal plasmons and the exchange of transverse plasmons in collisions between particles. The exchange of transverse plasmons is important for collisions between relativistic particles, but it has been disregarded previously when calculating the electrical conductivity. We show that taking this exchange into account changes the electrical conductivity, including its temperature dependence (thus, for example, the temperature dependence of the electrical resistivity along the magnetic field in the low-temperature limit takes the form ?_‖ ∝ T ^5/3 instead of the standard dependence ?_‖ ∝ T ² for degenerate Fermi systems). We briefly describe the effect of possible neutron and proton superfluidity in neutron star cores on the electrical conductivity and discuss various scenarios for the evolution of neutron star magnetic fields.     

Appearance of the dielectric instability and its coexistence with the superconductivity in ultrathin metallic filaments with decreasing diameter

Some dielectric instability appears before the superconducting (s/c) transition of Hg, In, Ga, Sn filaments when their diameters are decreased to 20–30 Å. Above the s/c transition the differential conductivity of the filaments may be approximated by the formula σ = σ_a + σ_b exp [-E₀(T)/E], where the electric field E₀ is equal toabout 10–60 mV cm^-1, and falls abruptly before the s/c transition. There are conductivity oscillations along E in the s/c transition region. The results are interpreted in terms of Peierls instability and charge-density wave (CDW) conductivity.     

Quantum Monte Carlo simulation of the ferroelectric or ferrielectric nanowire with core shell morphology

By using the Quantum Monte Carlo simulation; the electric properties of a nanowire, consisting of a ferroelectric core of spin-1/2 surrounded by a ferroelectric shell of spin-1/2 with ferro- or anti-ferroelectric interfacial coupling have been studied within the framework of the Transverse Ising Model (TIM). We have examined the effects of the shell coupling J_s, the interfacial coupling J_Int, the transverse field Ω, and the temperature T on the hysteresis behavior and on the electric properties of the system. The remanent polarization and the coercive field as a function of the transverse field and the temperature are examined. A number of characteristic behavior have been found such as the appearance of triple hysteresis loops for appropriate values of the system parameters.