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1.
We present a simple way to synthesize FePt and ZnO (wide-band-gap semiconductor) nanoparticle composites. The FePt nanoparticles were fabricated using the method reported by Sun et al. By controlling the heating rate, 3 nm FePt nanoparticles were synthesized. Well-dispersed FePt and ZnO nanoparticle composites were prepared by further adding zinc acetate and oleyl amine into the 3 nm FePt nanoparticle dispersion. By controlling the molar ratio of the FePt and zinc acetate, FePt and ZnO nanoparticle composites with different FePt particle fractions were obtained. The intensity of photo luminescence spectra of the nanoparticle composites increases very much with decreasing FePt particle fraction, whereas the peak position shifts a little. After annealing at 550 °C for half an hour, the nanoparticle composites become magnetically hard or semi-hard with coercivity much dependent on the FePt particle volume fraction. The coercivity of the composites increases with annealing temperature. The composites hold the promise of applications in new generation recording and/or optical devices.  相似文献   

2.
This work develops a new method for growing L10 FePt(0 0 1) thin film on a Pt/Cr bilayer using an amorphous glass substrate. Semi-coherent epitaxial growth was initiated from the Cr(0 0 2) underlayer, continued through the Pt(0 0 1) buffer layer, and extended into the L10 FePt(0 0 1) magnetic layer. The squareness of the L10 FePt film in the presence of both a Cr underlayer and a Pt buffer layer was close to unity as the magnetic field was applied perpendicular to the film plane. The single L10 FePt(1 1 1) orientation was observed in the absence of a Cr underlayer. When a Cr underlayer is inserted, the preferred orientation switched from L10 FePt(1 1 1) to L10 FePt(0 0 1) and the magnetic film exhibited perpendicular magnetic anisotropy. However, in the absence of an Pt intermediate layer, the Cr atoms diffused directly into the FePt magnetic layer and prevented the formation of the L10 FePt(0 0 1) preferred orientation. When a Pt buffer layer was introduced between the FePt and Cr underlayer, the L10 FePt(0 0 1) peak appeared. The thickness of the Pt buffer layer also substantially affected the magnetic properties and atomic arrangement at the FePt/Pt and Pt/Cr interfaces.  相似文献   

3.
The microstructure and magnetic properties of FePt films grown on Cr and CrW underlayers were investigated. The FePt films that deposited on Cr underlayer show (2 0 0) orientation and low coercivity because of the diffusion between FePt and Cr underlayer. The misfit between FePt magnetic layer and underlayer increases by small addition of W element in Cr underlayer or using a thin Mo intermediate layer, which is favorable for the formation of (0 0 1) orientation and the transformation of FePt from fcc to fct phase. A good FePt (0 0 1) texture was obtained in the films with Cr85W15 underlayer with substrate temperature of 400 °C. The FePt films deposited on Mo/Cr underlayer exhibit larger coercivity than that of the films grown on Pt/Cr85W15 because 5 nm Mo intermediate layer depressed the diffusion of Cr into magnetic layer.  相似文献   

4.
L10-ordered FePt thin films prepared by molecular-beam epitaxy on MgO (0 0 1) substrate at 320 °C with different thickness of Pt buffer layer have been investigated. The out-of-plane coercivity increases with increasing thickness of Pt buffer. The maximum values of the long-range order parameter and uniaxial magnetic anisotropy energy are 0.72 and 1.78×107 erg/cm3, respectively, for films with 12 nm thick Pt buffer layer, where the c/a ratio (0.976) shows the minimum value. The reason for the enhancement in ordering is due to the proper lattice strains Pt buffer bestows on FePt layer, these strains are equal to the contraction in lattice parameter c and the expansion in a. Studies of angular-dependent coercivity revealed that the magnetization reversal behaviour shifts from a domain-wall motion dominated case towards a near rotational mode with increasing thickness of Pt buffer layer.  相似文献   

5.
We report on the synthesis of TbMnO3 nanoparticles by chemical co-precipitation route and their structural, chemical bonding, magnetic and dielectric properties. It is shown that the interesting multiferroic properties of this system as reflected by the concurrent occurrence of magnetic and dielectric transitions are retained in the nanoparticles (size∼40 nm). However, the nanoparticle constitution and properties are seen to depend significantly on the calcination temperature. While the nanoparticles obtained by calcination at 800 °C correspond very well with the reported properties of single phase TbMnO3 (all the key magnetic and dielectric features near 7, 27 and 41 K, albeit with reduced dielectric constant) the nanoparticles obtained by calcination at 900 °C develop a Tb deficient skin which softens the transitions, reducing the dielectric constant further.  相似文献   

6.
FePt/B4C multilayer composite films were prepared by magnetron sputtering and subsequent annealing in vacuum. By changing Fe layer thickness of [Fe/Pt]6/B4C films, optimal magnetic property (8.8 kOe and remanence squareness is about 1.0) is got in [Fe(5.25 nm)/Pt(3.75 nm)]6/B4C sample whose composition is Fe rich and near stoichiometric ratio. The characterizations of microstructure demonstrate that the diffusion of B and C atoms into FePt layer depends strongly on B4C interlayer thickness. When B4C interlayer thickness of [Fe(2.625 nm)/Pt(3.75 nm)/Fe(2.625 nm)/B4C]6 films is bigger than 3 nm, stable value of grain size (6-6.5 nm), coercivity (6-7 kOe) and hardness (16-20 GPa) is observed. Finally, the multifunctional single FePt/B4C composite film may find its way to substitute traditional three-layer structure commonly used in present data storage technology.  相似文献   

7.
The Au/FePt samples were prepared by depositing a gold cap layer at room temperature onto a fully ordered FePt layer, followed by an annealing at 800 °C for the purpose of interlayer diffusion. After the deposition of the gold layer and the high-temperature annealing, the gold atoms do not dissolve into the FePt Ll0 lattice. Compared with the continuous FePt film, the TEM photos of the bilayer Au(60 nm)/FePt(60 nm) show a granular structure with FePt particles embedded in Au matrix. The coercivity of Au(60 nm)/FePt(60 nm) sample is 23.5 kOe, which is 85% larger than that of the FePt film without Au top layer. The enhancement in coercivity can be attributed to the formation of isolated structure of FePt ordered phase.  相似文献   

8.
An in-plane magnetic anisotropy of FePt film is obtained in the MgO 5 nm/FePt t nm/MgO 5 nm films (where t=5, 10 and 20 nm). Both the in-plane coercivity (Hc∥) and the perpendicular magnetic anisotropy of FePt films are increased when introducing an Ag-capped layer instead of MgO-capped layer. An in-plane coercivity is 3154 Oe for the MgO 5 nm/FePt 10 nm/MgO 5 nm film, and it can be increased to 4846 Oe as a 5 nm Ag-capped layer instead of MgO-capped layer. The transmission electron microscopy (TEM)-energy disperse spectrum (EDS) analysis shows that the Ag mainly distributed at the grain boundary of FePt, that leads the increase of the grain boundary energy, which will enhance coercivity and perpendicular magnetic anisotropy of FePt film.  相似文献   

9.
FePt thin layers have been epitaxied either on Pt(0 0 1) or on MgO(0 0 1) substrates, and magnetically characterized using extraordinary Hall effect magnetometry and magnetic force microscopy. The coercivity originates in both cases from the pinning of domain walls on structural defects. Whereas the coercivity increases with the FePt layer thickness in FePt/Pt samples, it decreases in FePt/MgO samples. This discrepancy is explained on the basis of structural observations, and of atomistic simulations of magnetic domain wall pinning.  相似文献   

10.
The monolayer of FePt nanoparticles with the mean size of ∼4 nm was fabricated on a glass substrate by the Langmuir––Blodgett (LB) technology. The monolayer of FePt nanoparticles has a smooth surface and a high density structure as shown by the AFM image. The array structure of FePt nanoparticles on the surface of the film is clearly with a cubic symmetry in appropriate condition. Small-angle X-ray diffraction (SXRD) measurement of multilayer structure for the FePt nanoparticles has indicated that the superlattices consist of well-defined smooth layers. The transfer of nanoparticle layers onto a solid substrate surface was quite efficient for the first few layers, exhibiting a proportional increase of optical absorption in the UV–vis range. This results potentially opens up a new approach to the long-range ordered array of FePt nanoparticles capped by organic molecules on substrate and provide a promising thin film, which may exhibit the excellent ultra-high density magnetic recording properties.  相似文献   

11.
FePt magnetic nanoparticle systems are an excellent candidate for ultrahigh-density magnetic recording. Monodisperse FePt nanoparticles are synthesized by superhydride reduction of FECl2·4H2O and Pt (acac)2 at 263℃ under N2 atmosphere. Transmission electron microscopy (TEM) images show monosize EePt nanoparticles with diameter of 4 nm and a standard deviation of about 10%. The average distance between monodispesre particles is nearly 3 nm, and oleic acid and oleylamine surround the nanoparticles as surfactants. Stability investigation of nanoparticle colloidal solution is done via speetrophotometery analysis. The results for FePt nanoparticles dispersed in hexane indicate that adding surfactants with concentration of 3 × 10^-3 part by volume for centrifugation stage increases the stability of FePt nanoparticles solution with concentration of 16 mg/mL, about 67%.  相似文献   

12.
The morphology of metal nanoparticles supported on oxide substrates plays an important role in heterogeneous catalysis and in the nucleation of thin films. For platinum evaporated onto SrTiO3 (0 0 1) and vacuum annealed we find an unexpected growth formation of Pt nanoparticles that aggregate into clusters without coalescence. This hierarchical nanoparticle morphology with an enhanced surface-to-volume ratio for Pt is analyzed by grazing incidence small-angle X-ray scattering (GISAXS), X-ray fluorescence (XRF), atomic force microscopy (AFM) and high-resolution scanning electron microscopy (SEM). The nanoparticle constituents of the clusters measure 2-4 nm in size and are nearly contiguously spaced where the average edge-to-edge spacing is less than 1 nm. These particles make up the clusters, which are 10-50 nm in diameter and are spaced on the order of 100 nm apart.  相似文献   

13.
Direct wafer bonding between high-density-plasma chemical vapour deposited (HDP-CVD) oxide and thermal oxide (TO) has been investigated. HDP-CVD oxides, about 230 nm in thickness, were deposited on Si(0 0 1) control wafers and the wafers of interest that contain a thin strained silicon (sSi) layer on a so-called virtual substrate that is composed of relaxed SiGe (∼4 μm thick) on Si(0 0 1) wafers. The surfaces of the as-deposited HDP-CVD oxides on the Si control wafers were smooth with a root-mean-square (RMS) roughness of <1 nm, which is sufficiently smooth for direct wafer bonding. The surfaces of the sSi/SiGe/Si(0 0 1) substrates show an RMS roughness of >2 nm. After HDP-CVD oxide deposition on the sSi/SiGe/Si substrates, the RMS roughness of the oxide surfaces was also found to be the same, i.e., >2 nm. To use these wafers for direct bonding the RMS roughness had to be reduced below 1 nm, which was carried out using a chemo-mechanical polishing (CMP) step. After bonding the HDP-CVD oxides to thermally oxidized handle wafers, the bonded interfaces were mostly bubble- and void-free for the silicon control and the sSi/SiGe/Si(0 0 1) wafers. The bonded wafer pairs were then annealed at higher temperatures up to 800 °C and the bonded interfaces were still found to be almost bubble- and void-free. Thus, HDP-CVD oxide is quite suitable for direct wafer bonding and layer transfer of ultrathin sSi layers on oxidized Si wafers for the fabrication of novel sSOI substrates.  相似文献   

14.
Granular L10 FePt (0 0 1) thin films were deposited on a Si substrate with Ta/MgO underlayers by rf sputtering. The effects of in-situ heating temperatures (350-575 °C), pressures (2-40 mTorr), and sputtering powers (15-75 W) on texture and microstructure were investigated for the FePt films. We obtained films with grain densities approaching 50 teragrains per in.2, grains sizes down to 2.2 nm with center-to-center spacing of 4.2 nm and coercivity of 24 kOe. The order parameters for the L10 FePt thin films were derived and calculated to be as high as 0.91. Although the grain size is small, the spacing between grains is too large for practical heat assisted magnetic recording media. To reach the desired results, we propose that layer-by-layer growth should be promoted in the FePt layer by inserting another underlayer that provides a better lattice match to L10 FePt.  相似文献   

15.
The deposition monolayers of L10 FePt nanoparticles via an electrospraying method and the magnetic properties of the deposited film were studied. FePt nanoparticles in a size of around 2.5 nm in diameter, prepared by a liquid process, were used as a precursor. The size of the deposited particles can be controlled up to 35 nm by controlling the sprayed droplet size that is formed by adjusting the precursor concentration and the precursor flow rate. The droplets were heated in a tubular furnace at a temperature of up to 900 °C to remove all organic compounds and to transform the FePt particles from disordered face centered cubic to an ordered FCT phase. Finally, the particles were deposited in the form of a monolayer film on a silicon substrate by electrostatic force and characterized by scanning electron microscopy. The monolayer of particles was obtained by the high charge on particles obtained during the electrospraying process. The magnetic properties of the monolayer were investigated by magneto-optic Kerr effect measurements. Coercivity up to 650 Oe for a film consisting of 35 nm L10 FePt nanoparticles was observed after heat treatment at a temperature of 800 °C.  相似文献   

16.
A smooth, semitransparent and homogeneous Parylene C/nanosilica composite film was prepared by chemical vapor deposition (CVD). The film was deposited onto the Si substrate coated with a modified nanosilica layer. The nanosilica modified by silane coupling agent have uniform diameters and distribution in the film. The diameter can be roughly estimated in the range of 80-150 nm. The thermal stability of the composite film containing modified silica nanoparticles is better than that of the pure and doped film with commercial nanoparticles, which is ascribed to the strong chemical bonding between the modified nanosilica and Parylene monomers. σe and σs, as elastic limit and yield stress, are about 21.2 MPa and 23.4 MPa of the pure film, compared with 32.1 MPa and 33.4 MPa of the composite film due to the nanosize effect and intensive interface adhesion of silica nanoparticles as reinforcement.  相似文献   

17.
Bidirectional ellipsometry has been developed as a technique for distinguishing among various scattering features near surfaces. The polarized angular dependence of three-dimensional light-scattering by the nanoparticles on thin film wafer is calculated and measured. These calculations and measurements yield angular dependence of bidirectional ellipsometric parameters for out-of-plane light-scattering. The experimental data show good agreement with theoretical predictions for different nanoparticle diameters and thin film thicknesses when bidirectional ellipsometry was employed to measure nanoparticles (60 nm, 100 nm, and 200 nm) on Si wafers with different film thicknesses of 2 nm, 5 nm, and 10 nm. Not only are the diameters of the nanoparticles determined, but also the film thicknesses can be calculated and distinguished from the measurement results. Additionally, the results indicate that improved accuracy is possible for measurements of scattering features from nanoparticles and thin films.  相似文献   

18.
The various compositions of FePt and FeRh nanoparticles, and their composite particles have been fabricated by the solution-phase chemical method and their magnetic properties characterized. High-resolution transmission electron microscopic observations indicate that mono-dispersed FeRh and FePt/FeRh nanoparticles are fabricated with the average size of 3–5 nm. However, larger size particles are distributed in the annealed state. From X-ray diffraction results, the as-deposited FeRh nanoparticles reveal a chemically disordered fcc structure which can be transformed into CsCl-type structure through thermal annealing. Similarly, the annealed FePt nanoparticles show the L10-phase fct structure although the fcc structure is apparent in the as-deposited state. It is also found that the first time in the exchange bias effect in the composite of ferromagnetic (FePt) and anti-ferromagnetic (FeRh) nanoparticles; result in a shift of the hysteresis loop after field cooling process.  相似文献   

19.
FePt multilayer films with and without Al underlayer were prepared by magnetron sputtering on SiO2 substrate and subsequently annealed in vacuum. Experimental results suggest that the existence of Al underlayer can effectively reduce the ordering temperature and increase the coercivity of FePt films. Due to the slight larger lattice constant of Al underlayer than that of FePt films, [Fe (0.66 nm)/Pt (0.84 nm)]30 films begin to order at 350 °C and the coercivity of them reach to 5.7 kOe after annealing at 400 °C for half an hour.  相似文献   

20.
We study the electrical characteristics of a MOS structure in which Pt nanoparticles are embedded. This structure has a tunneling oxide of 3.5 nm in thickness (a SiO2 thermal oxide layer) on top of a Si wafer, and a control oxide of 27 nm (HfO2 layer deposited by electron gun evaporation). The nanoparticles are deposited on the SiO2 layer with electron gun evaporation, at room temperature. The electrical study of the structures demonstrates that the “write” process is initiated at low electric fields. This indicates that this type of memory structure can be very promising for the fabrication of high speed MOSFET memory devices with low power consumption. Our charge retention measurements also show promising results.  相似文献   

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