Magnetostatic Coupling in CoFe2O4/Pb(Zr0.53Ti0.47)O3 Magnetoelectric Composite Thin Films of 2-2 Type Structure

CoFe₂O₄/Pb(Zr_0.53Ti_0.47)O₃ (CFO/PZT) magnetoelectric composite thin films of 2-2 type structure had been prepared onto Pt/Ti/SiO₂/Si substrate by a sol-gel process and spin coat-ing technique. The structure of the prepared thin film is substrate/PZT/CFO/PZT/CFO. Two CFO ferromagnetic layers are separated from each other by a thin PZT layer. The upper CFO layer is magnetostatically coupled with the lower CFO layer. Subsequent scan-ning electron microscopy (SEM) investigations show that the prepared thin films exhibit good morphologies and compact structure, and cross-sectional micrographs clearly display a multilayered nanostructure of multilayered thin films. The composite thin films exhibit both good magnetic and ferroelectric properties. The spacing between ferromagnetic layers can be varied by adjusting the thickness of intermediate PZT layer. It is found that the strength of magnetostatic coupling has a great impact on magnetoelectric properties of composite thin films, i.e., the magnetoelectric voltage coefficient of composite thin film tends to increase with the decreasing of pacing between two neighboring CFO ferromagnetic layers as a result of magnetostatic coupling effect.     

Effect of biphase on dielectric properties of Bi-doped lead strontium titanate thin films

Pb_0.4Sr_0.6TiO₃ (PST) thin films doped with various concentration of Bi were prepared by a sol-gel method. The phase status, surface morphology and dielectric properties of these thin films were measured by X-ray diffraction (XRD), scanning electron microscopy (SEM) and impedance analyzer, respectively. Results showed that the thin films with the maximum dielectric constant and minimum dielectric loss were obtained for x=0.15. For x<0.15, only pure PST perovskite phase were in the thin films. For 0.2<x<0.4, the PST/Bi₂Ti₂O₇ biphase were obtained. The thin films with pure Bi₂Ti₂O₇ pyrochlore phase were obtained for x=0.67. The biphase thin films had high tunability and high figure of merit (FOM). The FOM of PST/Bi₂Ti₂O₇ biphase thin film was about 6 times higher than that thin films formed with pure perovskite phase or pure pyrochlore phase.     

A Highly Sensitive and Selective Non-enzymatic Hydrogen Peroxide Sensor Based on Nanostructured Co3O4 Thin Films Using the Sol-gel Method

In this work we report an easy and efficient way to fabricate nanostructured cobalt oxide (Co₃O₄) thin films as a non-enzymatic sensor for H₂O₂ detection. Co₃O₄ thin films were grown on ITO glass substrates via the sol-gel method and characterized with several techniques including X-ray diffraction, scanning electron microscopy (SEM), transmission electron microscopy (TEM) and optical absorbance. The Co₃O₄ thin films’ performance regarding hydrogen peroxide detection was studied in a 0.1 M NaOH solution using two techniques, cyclic voltammetry (CV) and amperometry. The films exhibited a high sensitivity of 1450 μA.mM⁻¹.cm⁻², a wide linear range from 0.05 μM to 1.1 mM, and a very low detection limit of 18 nM. Likewise, the Co₃O₄ thin films produced showed an exceptional stability and a high selectivity.     

Vapor‐Surface Sol‐Gel Deposition of Titania Alternated with Protein Adsorption for Assembly of Electroactive,Enzyme‐Active Films

Combining vapor‐surface sol‐gel deposition of titania with alternate adsorption of oppositely charged iron heme proteins provided ultrathin {TiO₂/protein}_n films with reversible voltammetry extended to 15 TiO₂/protein bilayers, more than twice that of more conventional polyion‐protein or nanoparticle‐protein films made by alternate layer‐by‐layer adsorption. Catalytic activity toward O₂, H₂O₂, and NO was also improved significantly compared to the conventionally fabricated films. The method involves vaporization of titanium butoxide into thin films of water, forming porous TiO₂ sol‐gel layers. Myoglobin (Mb), hemoglobin (Hb), and horseradish peroxidase (HRP) were assembled by adsorption alternated with the vapor‐deposited TiO₂ layers. Improved electrochemical and catalytic performance may be related to better film permeability leading to better mass transport within the films, as suggested by studies with soluble voltammetric probes, scanning electron microscopy (SEM) and atomic force microscopy (AFM). The electrochemical and electrocatalytic activity of the films can be controlled by tailoring the amount of water with which the metal alkoxide precursor vapor reacts and the number of bilayers deposited in the assembly.     

Effect of substrate on phase formation and surface morphology of sol-gel lead-free KNbO3, NaNbO3, and K0.5Na0.5NbO3 thin films

Environmentally acceptable lead-free ferroelectric KNbO₃ (KN) or NaNbO₃ (NN) and K_0.5Na_0.5NbO₃ (KNN) thin films were prepared using a modified sol-gel method by mixing potassium acetate or sodium acetate or both with the Nb-tartrate complex, deposited on the Pt/Al₂O₃ and Pt/SiO₂/Si substrates by a spin-coating method and sintered at 650°C. X-ray diffraction (XRD) analysis indicated that the NN and KNN films on the Pt/SiO₂/Si substrate possessed a single perovskite phase, while NN and KNN films on the Pt/Al₂O₃ substrate contained a small amount of secondary pyrochlore phase, as did KN films on both substrates. Scanning electron microscopic (SEM) and atomic force microscopic (AFM) analyses confirmed that roughness R _q of the thin KNN/Pt/SiO₂/Si film (?? 7.4 nm) was significantly lower than that of the KNN/Pt/Al₂O₃ film (?? 15 nm). The heterogeneous microstructure composed of small spherical and larger needle-like or cuboidal particles were observed in the KN and NN films on both substrates. The homogeneous microstructure of the KNN thin film on the Pt/SiO₂/Si substrate was smoother and contained finer spherical particles (?? 50 nm) than on Pt/Al₂O₃ substrates (?? 100 nm). The effect of different substrates on the surface morphology of thin films was confirmed.     

Improvement of the oxidation behavior of Ti1-xAlxN hard coatings by optimization of the Ti/Al ratio

The oxidation behavior of cubic Ti_1-xAl_xN films was improved by decreasing the Ti/Al ratio from 50/50 in the direction of the phase transition between cubic and hexagonal structure. Metastable, polycrystalline, single-phase Ti_1-xAl_xN films were deposited on high speed steel (HSS) substrates by reactive magnetron sputtering ion plating (MSIP). The composition of the bulk was determined by electron probe microanalysis (EPMA), the crystallographic structure by thin film X-ray diffraction (XRD). A Ti_1-xAl_xN film with a Ti/Al atomic ratio of 38/62 was deposited in cubic NaCl structure, whereas a further decrease of the Ti/Al ratio down to 27/73 led to a two-phase film with both cubic and hexagonal constituents. The Ti_0.38Al_0.62N film was oxidized in synthetic air for 1 h at 800?°C. The oxidic overlayer was analyzed by X-ray photoelectron spectroscopy (XPS) sputter depth profiling, EPMA crater edge linescan analysis, and secondary neutrals mass spectroscopy (SNMS). Scanning electron microscopy (SEM) micrographs of the cross sectional fracture were taken for morphological examination. With higher Ti content, the Ti_1-xAl_xN formed a TiO_2-x rich sublayer beneath an Al₂O₃ rich toplayer, whereas the oxide layer on the Ti_0.38Al_0.62N film consisted of pure Al₂O₃. The thickness of the oxide layer was determined to 60–80 nm, about a quarter of the oxide layer thickness detected on Ti_0.5Al_0.5N films. The absence of a TiO_2-x sublayer was also confirmed by XRD. The results show a distinct improvement of the oxidation resistance of cubic Ti_1-xAl_xN films by increasing the Al content from x = 0.5 to 0.62, whereas a further increase leads to the hexagonal structure, which is less suitable for tribological applications due to its tendency to form cracks during oxidation.     

Enhanced performance as a lithium-ion battery cathode of electrodeposited V2O5 thin films by e-beam irradiation

The influence of electron beam irradiation on the electrochemical properties of electrodeposited V₂O₅ thin films was investigated. V₂O₅ thin films were deposited electrochemically onto indium tin oxide-coated glass from an aqueous vanadyl sulfate hydrate (VOSO₄⋅nH₂O) solution using Pt and Ag/AgCl as the counter electrode and reference electrode, respectively. Electrodeposition was performed potentiostatically at 1.7 V vs. Ag/AgCl. Electrodeposited samples were then subjected to a 1-MeV electron beam using an electron beam accelerator at the Korea Atomic Energy Research Institute. For comparison, a control sample was not irradiated with the electron beam. Crystallinity change before and after electron beam irradiation was investigated by X-ray diffraction and the oxidation state of vanadium determined by X-ray photoelectron spectroscopy. Scanning electron microscopy was utilized to examine surface morphology. It was observed that electron beam irradiation altered the oxidation state of vanadium and increased crystallinity. Significant morphological changes of V₂O₅ thin films were also observed with electron beam irradiation. Cyclic voltammetry was employed to evaluate the electrochemical properties of the synthesized V₂O₅ films in terms of their application as electrodes of lithium-ion battery. Compared with the control sample, which was not irradiated with an electron beam, the electron beam-irradiated V₂O₅ specimens showed much higher capacitance.     

Structural, morphology and electrical studies of Sm-modified bismuth titanate thin films on Si (100)

Samarium-substituted bismuth titanate (Bi_3.15Sm_0.85Ti₃O₁₂ (BSmT)) thin films have been grown on n-type Si (100) substrates by metalorganic decomposition and spin-coating technique. X-ray diffraction and scanning electron microscopy (SEM) analyses confirmed that the crystallinity of the films increases with increasing annealing temperature and the optimum temperature was found to be 700°C. The Raman measurement showed an increase in structural distortion due to the changed ionic radius and atomic mass of Sm ions. The current-voltage characteristics displayed good insulating properties for a film annealed at 700°C for 1 h. The capacitance-voltage characteristic hysteresis curves revealed that the ferroelectric property sufficiently controlled the silicon potential. The measurements of the dielectric constant and dissipation factor of BSmT as a function of frequency exhibited excellent dielectric properties.     

Facile synthesis of iron oxide with wormlike morphology and their application in water treatment

A novel and facile synthesis route for the manufacture of transparent and uniform nanocrystalline α-Fe₂O₃ (nc-Fe₂O₃) thin films and equivalent powders with wormlike morphology is reported, utilizing ferric nitrate as the inorganic source and triblock copolymer as the wormlike morphology-directing agent through the evaporation-induced assembly (EIA) method. X-ray powder diffraction (XRD), ellipsometry, thermogravimetry-differential scanning calorimetry (TG-DSC), Raman spectrum, N₂-sorption and scanning electron microscopy (SEM) were used to study the nc-Fe₂O₃ thin films and powders obtained by calcination at different temperatures. The nc-Fe₂O₃ powder samples showed an excellent ability to remove heavy metal ion (Cr(VI)) in water treatment. The possible formation mechanism of the nc-Fe₂O₃ with wormlike morphology was discussed.     

Solid state phase equilibria in the PtGaAs system

The PtGaAs solid state equilibrium phase diagram was determined at 600 °C with the use of X-ray powder diffraction, electron probe microanalysis (EPMA) and scanning electron microscopy (SEM). No ternary PtGaAs phases were found and limited solid solubility was measured in the constituent binary PtGa and PtAs compounds. GaAs, PtGa and PtAs₂ form a region of three-phase equilibrium which dominates the GaAs side of the phase diagram. The phase diagram is in agreement with previous observations that PtGa and PtAs₂ are the stable phases when platinum thin films are reacted to completion on GaAs.     

Enhanced dielectric properties of LSCO-buffered Ba(Sn<Subscript>0.05</Subscript>Ti<Subscript>0.95</Subscript>)O<Subscript>3</Subscript> thin film prepared by sol–gel processing

Ferroelectric Ba(Sn_0.05Ti_0.95)O₃ (BTS) thin films were deposited onto Pt/Ti/SiO₂/Si substrates by sol–gel technique with a 100 nm thick LSCO buffer layer. The influence of buffer layer on the phase and microstructure of the thin films was examined. Dielectric properties of the thin films were investigated as a function of frequency and direct current (DC) electric field. The results show that the LSCO buffer layer had a marked effect on the dielectric properties of the BTS films. The BTS thin films with LSCO buffer layer had enhanced dielectric properties.     

掺杂钒和硅对TiO2薄膜超亲水性的影响

0引言 TiO2薄膜是众多氧化物半导体薄膜中研究最为广泛的一种材料．其表面的超亲水性和表面自清洁效应开辟了光催化薄膜功能材料的新的研究领域，已成为众多研究者研究的对象。但是如果薄膜仅由TiO2组成，当光照停止，水在TiO2薄膜表面的润湿角逐渐升高．并恢复原始状态。TiO2的禁带较宽，普通光线如太阳光等都不能将其激发．限制了其实际应用。因此如何使TiO2材料的光谱响应范围由紫外光反扩展到可见．光区一日如何更长时间地保持薄膜良好的亲水性是目前研究的重点。     

纯相Li2MnO3薄膜的制备及作为锂离子电池正极材料的电化学行为

采用固相烧结法制备了纯相Li₂MnO₃正极材料及靶材,采用脉冲激光沉积（PLD）法在氧气气氛、不同温度下沉积了Li₂MnO₃薄膜. 通过X射线衍射（XRD）和拉曼（Raman）光谱表征了薄膜的晶体结构,采用扫描电镜（SEM）观察薄膜形貌及厚度,利用电化学手段测试了Li₂MnO₃薄膜作为锂离子电池正极材料性能. 结果表明,PLD 方法制备的纯相Li₂MnO₃薄膜随着沉积温度升高薄膜结晶性变好. 25 ℃沉积的薄膜难以可逆充放电,400 ℃沉积的薄膜具有较高的电化学活性和循环稳定性. 相对于粉末材料,400与600 ℃制备的Li₂MnO₃薄膜电极平均放电电位随着循环次数的衰减速率明显低于相应的粉体材料.     

Evaporated thin films of insulating poly-(tetrabromo-p-phenylenediselenide)

It has been shown that thin insulating film at the interface transparent conductive oxide/organic electroluminescent film could improve the performance of organic electroluminescent diodes (OLED). Such insulating film can be inorganic or organic. Poly-(tetrabromo-p-phenylenediselenide) (PBrPDSe) has been proved to be an efficient insulating film in OLED. The properties of these evaporated PBrPDSe thin films have been systematically studied by IR absorption, X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, electron spin resonance and optical transmission measurements. It is shown that, when the deposition temperature is kept below the decomposition temperature of the polymer, tetrabromo-p-phenylenediselenide molecule is preserved during the deposition process. However the polymer, which is insoluble in powder form, becomes soluble after deposition. It can be concluded that films are mainly composed of oligomers of tetrabromo-p-phenylenediselenide.The electrical properties of SnO₂/PBrPDSe/Al thin films structures have been studied. The current-voltage characteristics exhibit a rectifying behaviour with a forward direction corresponding to a positive bias of the transparent conductive oxide film, the SnO₂.     

Thin La2Zr2O7 films made from a water-based solution

Thin films of La₂Zr₂O₇ (LZO) are highly regarded as possible buffer layers in the coated conductor configuration. This report describes a new synthesis for thin crystalline LZO films, based on a largely water-based solution, mainly containing metal acetates, acetic acid and an organic amine-base: triethanolamine. Initially, a thin layer of amorphous material is deposited on the textured Ni-5 at%W substrate by means of dip-coating. Only by careful control of the thermal treatment can the layer be transformed into a crystalline layer. Important parameters in this respect are the heating rate and the dwell time. The amorphous gel is analysed by HR-TGA/DTA and HR-TEM. The textured layers are analysed by XRD, pole figures, RHEED, AFM and SEM.     

Layer—by—layer Multilaryer Films Self—assembled from a Rare—earth—containing Poly—oxometalate,Na9[Eu（W5O18）2] and Poly （allylamine hydrochloride） and Their Photoluminescent Properties

Ultrathin multilayer films of a rare-earth-containing polyoxometalate Na9[Eu(W5O18)2](EW) and poly (allymamine hydrochloride)(PAH) have been prepared by layer-by-layer self-assembly from dilute aqueous solution.The fabrication process of the EW/PAH multilaryer films was followed by UV-vis spectroscopy and ellipsometry,which show that the deposition process is linear and highly reproducible from layer to layer.An average EW/PAH bilayer thickness of ca.2.1nm was determined by ellipsometry.In addition,the scanning electron microscopy(SEM) image of the EW/PAH film indicates that the film surface is relatively uniform and smooth.The photoluminescent properties of these films were also investigated by fluorescence spectroscopy.     

The effect of different gas atmospheres on the structure,morphology and photoluminescence properties of pulsed laser deposited Y3(Al,Ga)5O12:Ce3+ nano thin films

Luminescent properties of Y₃(Al,Ga)₅O₁₂:Ce³⁺ phosphor powder and thin films were obtained. The phosphor powder was used as target material for Pulsed Laser Deposition (PLD) of the thin films in the presence of different background gases. Excitation peaks for the powder were obtained at 439, 349, 225 and 189 nm and emission peaks at 512 and 565 nm. X-ray diffraction indicated that better crystallization took place for films deposited in a 20 mTorr O₂ atmosphere. Atomic force microscope revealed an RMS value of 0.7 nm, 2.5 nm and 4.8 nm for the films deposited in vacuum, O₂ and Ar atmospheres, respectively. The highest PL intensity was observed for films deposited in the O₂ atmosphere. A slight shift in the wavelength of the PL spectra was obtained for the thin films due to a change in the crystal field. The thickness of the films varied from 120 nm to 270 nm with films deposited in vacuum having the thin layer and those in Ar having the thick layer. The stoichiometry of the powder was maintained in the film during the deposition as confirmed by Rutherford backscattering spectroscopy.     

Enhanced photocatalytic activities of ZnO thin films: a comparative study of hybrid semiconductor nanomaterials

Nanostructure single ZnO, SnO₂, In₂O₃ and composite ZnO/SnO₂, ZnO/In₂O₃ and ZnO/SnO₂/In₂O₃ films were prepared using sol?Cgel method. The obtained composite films were characterized with X-ray diffraction (XRD), scanning electron microscopy (SEM), and UV?CVis spectroscopy. The photocatalytic activities of composite films were investigated using phenol (P), 2,4-dichlorophenol (2,4-DCP), 4-chlorophenol (4-CP) and 4-aminophenol (4-AP) as a model organic compounds under UV light irradiation. Hybrid semiconductor thin films showed a higher photocatalytic activity than single component ZnO, SnO₂ and In₂O₃ films. The substituted phenols degrade faster than phenol. The ease of degradation of phenols is different for each catalyst and the order of catalytic efficiency is also different for each phenol. The use of multiple components offered a higher control of their properties by varying the composition of the materials and related parameters such as morphology and interface. It was also found that the photocatalytic degradation of phenolic compounds on the composite films and single films followed pseudo-first order kinetics.     

Investigation of the structural properties of annealed CdIn2Te4/CdS thin film solar cells produced by the electron-beam evaporation (e-beam) technique

Thin film CdIn₂Te₄/CdS solar cells were deposited onto the ITO-coated glass substrate by electron beam evaporation (e-beam) technique, and the the effect of annealing on their structural properties is studied. The annealing was performed under nitrogen atmosphere for 1 h. The manufactured solar cells were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray (EDAX) analysis. Crystallite size (D), inter-planer distance (d) and lattice constant (a) values were calculated for the thin film solar cell from XRD data. Annealed samples display well defined XRD patterns with three diffraction peaks. We observed increased peak intensity in the annealed films. EDAX analysis showed that only CdIn₂Te₄ is present in absorber layer and CdS is found in the window layer, but no impurity atoms are present the structure. It is observed that surface roughness of the annealed films incresed, according to SEM images. The I–V characteristics show that the current is increased for annealed thin films solar cells.