大功率变流器脉冲电流的计算

为了适应核聚变实验的要求,在下一代托卡马克的设计中需要变流器输出瞬时高强度脉冲电流为大型电气设备提供动热稳定等型式试验。提出一种将电源系统阻抗等效到整流变压器二次侧并结合变流器两端电压变化关系的方法,建立了大功率变流器的等效电路模型。在不同电气参数下计算得出了相应的多台变流器并联的总输出电流。以1000 kA为目标,给出了符合条件的电气参数计算过程和结果。该结果作为给定参数下的极限条件,使得在大功率变流器脉冲电流设计时有了最低设计阈值,为后续的变流器器件选型和结构设计奠定了基础。     

国产星用VDMOS器件总剂量辐射损伤效应研究

研究了两种国产星用VDMOS器件在不同偏置条件下的总剂量辐射损伤效应, 探讨了器件的阈值电压、击穿电压、导通电阻、漏电流等电参数随累积剂量、退火时间的变化关系. 实验结果表明这两种国产星用VDMOS器件辐照后电参数符合技术指标, 满足在复杂空间电离辐射环境下工作的要求.此外, 通过对器件在不同偏置条件下的总剂量辐射损伤效应进行研究, 对其他型号星用VDMOS器件工艺和设计的进一步改进, 具有参考作用.     

用于红外单光子探测的雪崩光电二极管传输线抑制电路模型的理论分析

结合利用雪崩光电二极管(APD)进行红外单光子探测电路模型的工作原理和特点以及传输线瞬态电脉冲产生的过程,提出了将传输线瞬态过程脉冲发生电路模型用于APD雪崩抑制的一种新方法,该方法可以实现利用APD门模工作方式进行红外单光子探测的过程.主要从理论上计算了红外单光子信号入射APD时,传输线脉冲发生电路模型中负载电阻输出电脉冲的特点,讨论了传输线终端不同边界条件对输出电脉冲的影响,通过理论计算确定了这种利用APD进行红外单光子探测新模型的电路结构与参数,证明了该电路模型用于红外单光子探测APD门模工作方式的 关键词： 红外单光子探测技术 雪崩光电二极管(APD) 抑制电路 传输线瞬态过程     

Physics of electron and lithium-ion transport in electrode materials for Li-ion batteries

The physics of ionic and electrical conduction at electrode materials of lithium-ion batteries(LIBs) are briefly summarized here, besides, we review the current research on ionic and electrical conduction in electrode material incorporating experimental and simulation studies. Commercial LIBs have been widely used in portable electronic devices and are now developed for large-scale applications in hybrid electric vehicles(HEV) and stationary distributed power stations. However,due to the physical limits of the materials, the overall performance of today's LIBs does not meet all the requirements for future applications, and the transport problem has been one of the main barriers to further improvement. The electron and Li-ion transport behaviors are important in determining the rate capacity of LIBs.     

Generation of pure electrical quadrature amplitude modulation with photonic vector modulator

A photonic vector modulator architecture for generating pure quadrature amplitude modulation (QAM) signals is presented. An electrical quadrature-modulated signal at microwave-millimeter-wave frequencies is generated from its corresponding baseband in-phase (I) and quadrature (Q) components. In the proposed scheme, no electrical devices apart from the electrical tone oscillator are needed in the generation process. In addition, the purity of the generated signal is increased, and the hardware requirements are reduced when compared with previously proposed architectures so a highly compact low-cost architecture can be implemented. A pure 1.25 Gbit/s 4-QAM signal has been experimentally generated at a 42 GHz carrier frequency.     

Preparation of Ga-doped ZnO films by pulsed dc magnetron sputtering with cylindrical rotating target for thin film solar cell applications

Applicability of Ga-doped ZnO (GZO) films for thin film solar cells (TFSCs) was investigated by preparing GZO films via pulsed dc magnetron sputtering (PDMS) with rotating target. The GZO films showed improved crystallinity and increasing degree of Ga doping with increasing thickness to a limit of 1000 nm. The films also fulfilled requirements for the transparent electrodes of TFSCs in terms of electrical and optical properties. Moreover, the films exhibited good texturing potential based on etching studies with diluted HCl, which yielded an improved light trapping capability without significant degradation in electrical propreties. It is therefore suggested that the surface-textured GZO films prepared via PDMS and etching are promising candidates for indium-free transparent electrodes for TFSCs.     

The Sun: A User's Manual,By C. Vita-Finzi

The article deals with the rationalized MKS system of electrical units within the SI system in relation to the requirements of school and university teaching. The difficulties arising from the availability of two possible sets of units within the MKS system, those suggested by Kennelly and by Somefield, are discussed.     

小型氦气实验回路的设计与建造

设计和建造了一个用于测试核聚变装置部件的氦气回路,回路包括隔膜风机、电加热器、氦气回热器、氦水换热器和储气罐等。实验段氦气入口压力为8MPa,温度为300℃,流量为0.1kg•s^-1。这些参数达到了小部件测试要求。     

The relevance of optical transducers to the process industries

The first part of the paper deals with the requirements of the process industries for measurement transducers and systems. It classifies the industries and discusses the measurands involved. Reference is made to the desirable characteristics and performances of transducers as discrete units and as system components.The second half of the paper examines these requirements in relation to the potential of optical transducers. It concludes that although these new transducers could have some useful characteristics involving simplicity, safety and freedom from interference, there are many obvious design and development problems and limitations which have to be overcome before optical transducers can replace their electrical counterparts particularly in control systems.     

Fiber-coupled position sensors for aerospace applications

Fiber-coupled position sensors promise advantages over their electrical counterparts for aerospace applications such as weight savings, immunity to radiated electrical interference, and improved performance, but so far, no sensor has gained widespread acceptance. This paper describes three fiber-coupled sensors presently under development at the Boeing High Technology Center including a single track analog sensor, a sensor based on weighted number system encoding, and a sensor based on FMCW laser radar techniques. Technical difficulties encountered, customer requirements, and a summary of a standardized WDM sensor interface including a broadband LED source and a compact spectograph are also discussed.     

空间光学遥感器控制器机电热一体化设计

根据空间电子设备机电热一体化设计思想,设计了高分辨率空间光学遥感器的控制器,以验证一体化设计的优势和效果。概括了空间电子设备的一体化设计流程。针对空间光学遥感器控制器的研制提出了相应的一体化设计原则。说明了控制器的各电路板和大功率元器件的设计方案。通过热、力学仿真分析和试验手段对设计方案进行了验证。结果表明:控制器元器件的最高壳温在51℃以内,整机的前三阶模态均高于100Hz。设计方案完全满足热控、刚度等设计指标要求。     

Growth and doping of bulk GaN by hydride vapor phase epitaxy

Doping is essential in the growth of bulk GaN substrates,which could help control the electrical properties to meet the requirements of various types of GaN-based devices.The progresses in the growth of undoped,Si-doped,Ge-doped,Fedoped,and highly pure GaN by hydride vapor phase epitaxy(HVPE) are reviewed in this article.The growth technology and precursors of each type of doping are introduced.Besides,the influence of doping on the optical and electrical properties of GaN are presented in detail.Furthermore,the problems caused by doping,as well as the methods to solve them are also discussed.At last,highly pure GaN is briefly introduced,which points out a new way to realize high-purity semi-insulating(HPSI) GaN.     

1.25μm近红外场助光阴极材料InGaAsP/InP的液相外延

本文简要阐述了近红外场助光阴极的原理及对外延材料的要求。利用液相外延工艺并采用独特的掺杂技术生长出了用于近红外光电阴极的InP/InGaAsP 异质结结构。显微分析。x射线双晶衍射、电子探针、电化学C-V等测试结果表明外延层的结晶质量及电学性能符合设计的特殊要求,在此基础上制作的场助光电阴极量子效率在1.20μm处为3.5×10~(-4),其响应波长可达1.25μm。     

电磁轨道发射装置隔离式分压器

研制了一套用于测量电磁发射装置轨道电压信号的隔离式分压器,实现了测量回路与被测回路之间的电隔离,简化了电磁发射装置测试系统的复杂性。并对影响隔离式分压器频率响应的元件参数进行了参数扫描,结果表明:研制的分压器在-3 dB区间的频率响应范围为14 Hz~18 MHz,满足电磁发射装置轨道电压信号的测试要求。使用P6015A高压探头进行比对标定,输出信号的前沿约1s,频率响应满足电磁轨道发射装置轨道电压信号的测量要求。同时用隔离式分压器及电阻分压器测量轨道电压信号,两者波形符合较好。     

Silicon-on-insulator dynamic threshold ESD networks and active clamp circuitry

Active clamp circuits are essential to minimize electrical overshoot and undershoot and minimize reflected signals and achieve performance objectives and reliability requirements in high performance CMOS circuits. This paper discusses for the first time the electrostatic discharge (ESD) protection circuits of silicon-on-insulator (SOI) active clamp networks, dynamic threshold MOSFET SOI ESD techniques and the synthesis of DTMOS concepts, ESD protection networks and active clamp circuitry for high-pin-count high-performance semiconductor chips.     

1.25μm近红外场助光阴极材料InGaAsP/InP的液相外延

本文简要阐述了近红外场助光阴极的原理及对外延材料的要求。利用液相外延工艺并采用独特的掺杂技术生长出了用于近红外光电阴极的InP/InGaAsP 异质结结构。显微分析。x射线双晶衍射、电子探针、电化学C-V等测试结果表明外延层的结晶质量及电学性能符合设计的特殊要求,在此基础上制作的场助光电阴极量子效率在1.20μm处为3.5×10^-4,其响应波长可达1.25μm。     

Future hard disk drive systems

This paper briefly reviews the evolution of today's hard disk drive with the additional intention of orienting the reader to the overall mechanical and electrical architecture. The modern hard disk drive is a miracle of storage capacity and function together with remarkable economy of design. This paper presents a personal view of future customer requirements and the anticipated design evolution of the components. There are critical decisions and great challenges ahead for the key technologies of heads, media, head-disk interface, mechanics, and electronics.     

Tin Dioxide Nanowires: Evolution and Perspective of the Doped and Nondoped Systems

SnO₂ semiconductor nanowire is an extremely important technological material for use in nanophotonic and nanoelectronic devices. These semiconductor nanowires of desirable property can be achieved through a bottom-up approach to the controlled synthesis in a pure or doped state. Each of the synthetic methods offers materials with broad range structural, morphological, optical, and electrical properties. Selective doping of the SnO₂ nanowires by normal, transition or inner transition elements offer a broad variation in the optical and electrical properties and are open for further theoretical exploration of the properties as well as necessary changes possible for the improvement of the material properties. The properties of SnO₂ nanowires can be tuned either in the pure state by structural modification or doping during nanowire growth or after growth to meet most of the requirements.     

飞机机电系统PHM技术方案研究

针对目前飞机PHM系统难以精确设计的技术瓶颈,并为了满足提高飞机故障诊断与健康管理技术能力的目标要求,本文在大量调研并参考国内外飞机PHM系统设计经验的基础上,结合国内针对PHM设计的特殊背景,通过对飞机机电系统进行了深入分析与研究,提出了一种针对飞机机电系统PHM总体方案架构思想。文章给出了机电系统PHM区域管理器结构的设计思路及机电系统PHM区域管理器设计,开展机电系统aFMECA分析,明确了该系统设计的指导思想、功能和组成,并着重论述了各主要功能模块的设计方案,最后形成了飞机机电系统PHM技术方案,对于促进国内PHM技术的发展具有重要作用,同时也为其他武器装备的PHM技术的研究具有一定的指导作用。     

HL-2M装置环向场线圈导体材料的选择和制造

为利于HL-2M真空室(VV)及极向场线圈(PFC)的整体安装,环向场线圈(TFC)采用比特板式结构,这种结构需要用到高强度高导电性能的大尺寸异形铜合金厚板以便满足线圈复杂受力的要求。通过应力分析,确定了在TFC上使用的3种铜合金。介绍了大尺寸异形铜合金板材的制造工艺和铜板多项性能的测试结果,结果表明异形铜合金板材的尺寸及各项性能均满足了HL-2M装置环向场线圈的工程设计及加工要求。