半导体电火花线切割微接触式放电高效切割机理研究

与金属电火花加工不同,由于半导体材料特殊的电特性,在进行半导体电火花线切割加工时,在电极丝与工件接触甚至已经被工件顶弯的状态下依然可以进行火花放电,蚀除工件材料,并且在微接触状态的切割效率还大大提高.研究分析认为:这主要是由于接触势垒和体电阻的存在,导致两极间在微接触时极间电压依旧维持在一个较高值,从而能在与微接触点不同的其他区域产生火花放电.分析了微接触式放电状态下效率提高的机理,认为切割效率的提高主要是由于脉冲放电本身利用效率的提高和侧边放电几率的降低所导致的用于正常蚀除的整体脉冲利用率提高.对微接触状态下的加工精度进行了研究,认为在微接触状态下进行切割加工时,应调整补偿量,以维持较好的加工尺寸精度.     

单晶硅电火花铣削维持电压测定及蚀除机理研究

提出一种以电火花放电加工技术对半导体硅材料进行铣削加工的方法,建立了半导体放电加工电路模型,测量了半导体放电加工放电通道的维持电压,其值为18V.在此基础上,从放电能量和ANSYS仿真两个方面对单晶硅电火花铣削的蚀除机理进行了研究.通过单位能量蚀除量的计算,并与45钢比较,得出单位能量单晶硅的蚀除量是45钢的4倍,由此提出了单晶硅蚀除是热蚀除和热应力剥落综合作用的结果;通过仿真分别计算出单脉冲放电温度场和热应力场的蚀除量,其热应力剥落是热蚀除的4.6倍,与基于能量计算的分析结果基本吻合.最后实验验证了分析结果的正确性.     

横向超声辅助线锯振动切割单晶SiC法向锯切力研究

锯切力是线锯切割加工中极其重要的参数,它不仅影响切割效率和晶片的表面质量,而且还严重影响晶片的亚表面损伤程度和线锯的寿命.本文将横向超声振动应用于金刚石线锯切割单晶SiC过程中并对受迫振动线锯的法向锯切力进行理论分析和研究.基于轴向运动弦线受迫振动模型,求解出在两种不同位置超声激励下线锯中间切割点横向振动位移的函数表达式;依据冲量定理和磨削理论,建立了横向超声辅助金刚石线锯的法向锯切力模型并推导出横向受迫振动线锯锯切单晶SiC法向锯切力的预测公式.对单晶SiC进行横向超声辅助线锯振动切割和普通线锯切割对比实验并分析横向超声振动和加工参数对线锯法向锯切力的影响,结果表明相同实验条件下,横向超声振动切割比普通线锯切割法向锯切力减小25; ～35;.理论预测与实验结果具有较好一致性.     

适用于硅晶体多线切割的线切割液研制

本文通过硅片旋转磨损试验模拟线切割过程,以评价切割液的切割性能。首先,通过对比试验选出线切割液的主要组份;接着,通过正交试验优化各组份的含量并得到最优配方;最后,在相同条件下将最优配方与某市场切割液进行比较。结果表明:自制最优配方切割液MRR为7820 nm/min,Ra为9.12 nm。与市场切割液相比MRR稍低,但表面粗糙度要好。分析原因是由于新配方切割液在分散性和润滑性方面有所提高,而且碱性变强,加大了化学作用,有效的提高了晶片表面质量。     

硫镓银晶体的定向切割

研究了一种准确、简捷定向切割硫镓银(AgGaS2)晶体的新方法.利用晶体结构特点,从AgGaS2晶体上解理出两个不平行的{101}晶面,结合其晶面间夹角关系和标准极图,确定出晶体的C轴方向.然后,以C轴为基准,按相位匹配角度对晶体进行切割,得到器件的通光面.再对切割出的器件初样进行加工和采用X射线衍射修正,获得了10 mm×10 mm×20 mm的AgGaS2晶体光参量振荡(OPO)器件.新方法对AgGaS2晶体进行定向切割加工,精度高、操作简便、重复性好,不仅可用于AgGaS2晶体的定向切割,而且可用于其它一些具有类似结构晶体的定向切割.     

横向超声激励对金刚石线锯切割单晶SiC切割速度及切割机理影响

硬脆晶体材料如SiC、Ge和Si等,由于具有极高的硬度和脆性,普通线锯切割很难进一步提高硬脆材料晶片的切割效率和表面质量.本研究把超声振动应用到金刚石线锯切割单晶SiC.基于超声振动切削加工的特点,分析了柔性线锯横向振动切割单晶SiC的必要条件;建立了横向超声激励下柔性金刚石线锯对SiC工件的动态切割过程模型,研究分析了超声振动对线锯间歇切割弧长及切割速度的影响,得到横向超声振动线锯切割速度增量的数学表达式.基于压痕裂纹模型,讨论了横向超声振动线锯切割和普通线锯切割对切割速度、切割力和表面粗糙度的影响.以单晶SiC为切割对象,对普通线锯切割和超声振动线锯切割进行了对比实验,结果表明在相同条件下,超声振动线锯切割使晶片的表面粗糙度有明显改善,超声振动线锯的切割速度比普通线锯切割的速度提高了约45;,锯切力减少28;~53;.实验结果与理论分析具有良好的一致性.     

放电等离子烧结制备LaTiO3的反应过程研究

采用放电等离子烧结方法制备LaTiO3材料.基于不同温度烧结样品的物相组成变化,对SPS烧结制备LaTiO3的反应过程进行研究.研究结果表明:SPS烧结制备LaTiO3的反应过程可以分为低温、中温和高温三个阶段.随着烧结温度升高,由于系统环境变化和高温氧缺位的形成,Ti的价态经历了Ti3+ →Ti4+→Ti3+/Ti4 +→Ti3+的转变.由于相变阻力的存在,LaTiO3并不能由原料直接生成,在低温和中温阶段要经历La2Ti2O7,La2/3TiO3,La5Ti5O17等中间相.LaTiO3相的生成主要发生在1400～ 1550℃,并在1550℃生成单相LaTiO3.     

超声辅助线锯切割SiC单晶实验研究

针对单晶SiC切割过程切割效率低,加工表面粗糙度和表面不平度差以及线锯磨损和断裂严重等问题,提出采用线锯横向施加超声振动的方法切割单晶SiC.通过实验对比研究了普通切割与超声辅助切割两种切割工艺,结果表明:与普通切割相比,超声辅助切割单晶SiC,锯切力减小37;～52;,且减小趋势随工件进给速度的增大更明显;切片表面粗糙度降幅约为26;～55;,晶片表面形貌均匀,无划痕,明显优于普通切割方法所获得的表面;线锯磨损降低约近40;;切割效率提高近56;.     

基于沉积温度优化和后退火工艺改善a-Si∶H/c-Si界面钝化质量的研究

a-Si∶H薄膜作为钝化层,在提高硅异质结太阳能电池效率方面发挥关键作用,工业化生产中通常采用PECVD法制备制备a-Si∶H薄膜.在本文中,首先对关键工艺参数如沉积温度进行了优化,并在160℃下获得了最佳的钝化效果.接着,通过傅里叶变换红外光谱法对a-Si∶H薄膜的微结构进行表征,以探索其钝化机理:低温下制备的a-Si∶H薄膜氢浓度高并有微空洞,从而影响钝化效果;高温下制备的a-Si∶H薄膜消除了微空洞而明显改善钝化质量.但是,过高的沉积温度又会导致a-Si∶H薄膜中微空位的产生从而影响钝化效果.此外,对比了两种典型后退火工艺对钝化效果的影响:一种是基于200℃退火10 min,一种是基于450℃退火30 s,并对相关钝化机理进行了研究.结果表明,第二种退火方式明显改善样品的钝化效果,主要原因是该退火消除了低温沉积样品中的微空洞和高温沉积样品中的微空位.最后,通过透射电镜研究了退火后的a-Si∶ H/c-Si界面微结构,并未观察到影响钝化效果的外延生长.     

钎焊金刚石线锯切割单晶硅时的材料去除机理研究

利用钎焊金刚石线锯,在恒进给速度的方式下对单晶硅材料进行切割加工,探讨切割参数对切割力及表面粗糙度的影响机制.建立了金刚石线锯的切割力模型,推导线锯横截面不同位置处金刚石磨粒的法向力与线锯总法向力之间的关系式,依据单晶硅材料的压痕断裂力学性能,探讨钎焊金刚石线锯切割单晶硅时线锯横截面不同位置金刚石磨粒去除材料的机理.分析表明,随着磨粒位置的变化,其法向力值经历了一个从最大值到零的变化过程,并存在脆塑性转变角,其值的大小决定了工件表面材料的去除方式.     

新型红外非线性光学晶体BaGa2GeSe6的生长与器件制备

钡镓锗硒(BaGa₂GeSe₆,BGGSe)晶体是由中国科学家发明的一种性能优异的新型红外非线性光学材料.目前国内未见到关于该晶体的大尺寸制备报道.本研究采用自制的双温区管式炉成功合成出BGGSe多晶,单次合成量达到400 g;采用坩埚下降法生长出大尺寸高质量BGGSe单晶,尺寸为φ30 mm×90 mm,为国内首次;通过定向、切割和抛光等处理工艺,成功制备出BGGSe晶体器件,为该晶体下一步的应用研究打下了坚实基础.     

Study of the possibility of growing germanium single crystals under low temperature gradients

The possibility of growing germanium single crystals under low temperature gradients in order to produce a dislocation-free material has been studied. Germanium crystals with a dislocation density of about 100–200 cm^?2 have been grown in a system with a weight control of crystal growth at maximum axial gradients of about 1.5 K/cm.     

6英寸低位错锗单晶生长热场设计

锗片作为衬底材料已在空间太阳电池领域得到广泛的应用,新型锗基空间太阳能电池对锗片的需求由4英寸(1英寸=2.54 cm)提高到6英寸后,低位错锗单晶的生长难度增大.本文设计开发了一种适用于直拉法生长大尺寸、低位错锗单晶的双加热器热场系统,模拟研究了不同形状主加热器的热场分布,从而得到最优的热场环境.研究发现:渐变长度为...     

Anisotropy effect of high-momentum of ADAP in diamond-like semiconductors

A high-momentum component of angular distributions of annihilation photons (HMC ADAP) has been studied experimentally and theoretically in single crystals of germanium, silicon and gallium arsenide and in a single crystal and polycrystal silicon. The model oe the process of positron annihilation with electrons of ion cores has been suggested and the calculations of HMC ADAP curves have been performed for crystallographic directions [111], [110] and [100] of a dimond-like lattice. It has been established that ADAP anisotropy characteristics in a single crystal of germanium are slightly dependent on the temperature in the range of ΔT = 300÷930 K. It has been concluded that HMC ADAP anisotropy is caused by annihilation of thermalizod positrons with electrons of outer shells of ion cores in crystal lattices of dimond-like semiconductors.     

Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities

Oxygen-containing germanium (Ge) single crystals with low density of grown-in dislocations were grown by the Czochralski (CZ) technique from a Ge melt, both with and without a covering by boron oxide (B₂O₃) liquid. Interstitially dissolved oxygen concentrations in the crystals were determined by the absorption peak at 855 cm⁻¹ in the infrared absorption spectra at room temperature. It was found that oxygen concentration in a Ge crystal grown from melt partially or fully covered with B₂O₃ liquid was about 10¹⁶ cm⁻³ and was almost the same as that in a Ge crystal grown without B₂O₃. Oxygen concentration in a Ge crystal was enhanced to be greater than 10¹⁷ cm⁻³ by growing a crystal from a melt fully covered with B₂O₃; with the addition of germanium oxide powder, the maximum oxygen concentration achieved was 5.5×10¹⁷ cm⁻³. The effective segregation coefficients of oxygen in the present Ge crystal growth were roughly estimated to be between 1.0 and 1.4.     

Promotion of crystal growth rate in aqueous solution by direct contact with gas corona discharge

A new technique to promote crystal growth in aqueous solution using gas plasma is proposed. In this method, short‐lived radical species produced in solution which is contacted with gas corona discharge play a role to increase chemical potential of inorganic solute. In an experimental examination, single crystal of KDP was grown in a supersaturated solution which receives oxygen ions and radicals from adjacent corona discharge in air. KDP crystal has two unique growth faces (100) and (101), and the growth rates of both faces were increased considerably by generating the corona discharge. The both growth rates with and without corona discharge were well converged by one function based on chemical potential supersaturation. This result revealed that the solution in contact with gas corona discharge has a larger capacity of chemical potential than that without the discharge. Short‐lived species induced by gas corona discharge are considered to be anti‐solvents to cause this effect. The crystal growth process proposed here is considered to be an excellent method in terms of low impurity inclusion because such short‐lived species do not remain in the final crystal products and solution. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

掺锗提高VO2薄膜的相变温度机理研究

二氧化钒(VO₂)作为一种长久以来备受关注的新型可逆相变材料,发展潜力巨大,其相变温度(T_MIT)的调控一直是研究热点。本文主要利用锗离子作为掺杂离子探索其对VO₂薄膜T_MIT的影响,并尝试解释其内部作用机理。在约1 cm²大小抛光的氧化铝薄片上沉积了一系列含不同比例锗离子VO₂薄膜。研究发现锗离子作为掺杂离子确实有利于T_MIT的提高(本课题T_MIT最大可达84.7 ℃)。T_MIT提高的主要原因是锗离子的引入能够强化单斜态V-V二聚体的稳定性,进而增强单斜态的稳定性,使得低温单斜态向四方金红石态转变更加困难。     

Germanium films with strong in-plane and out-of-plane texture on flexible,randomly textured metal substrates

High efficiencies have been achieved in photovoltaic cells based on III–V compounds grown on single crystal germanium substrates. Since the size of these substrates is limited and their cost is very high, such III–V photovoltaics have not found widespread terrestrial use. The objective of this work is to develop highly textured, epitaxial germanium thin films on inexpensive substrates suitable for roll-to-roll continuous processing to serve as templates for III–V compounds. Germanium films with a high degree of in-plane and out-of plane texture have been demonstrated on randomly textured, flexible nickel alloy substrates by epitaxial growth on template films made by ion beam-assisted deposition (IBAD). In order to achieve epitaxial growth, an intermediate layer of CeO₂ was found to be required between the IBAD MgO template and the Ge film. Our study shows that structural match between Ge and the underlying oxide layer is the key to epitaxial growth. Room temperature optical bandgap of the Ge films was identified at 0.67 eV suggesting minimal residual strain in the film. Refraction index and extinction coefficient values of the epitaxial Ge film were found to match well with that measured from a reference Ge single crystal.     

Preparation,Morphology and Structure of Cadmium Telluride Epitaxial Layers on Germanium Substrates

Growth conditions of cadmium telluride single crystal layers on germanium (111), (110), (100), (112) substrates in quasi-closed “sandwich” system in a hydrogen atmosphere, were investigated in this paper. The peculiarities of layer morphology for the different orientations are presented.     

γ-ray induced GeODC(II) centers in germanium doped α-quartz crystal

Main luminescence of α-quartz crystal doped with germanium results from the luminescence of a self-trapped exciton (STE) near germanium. In as grown Ge-doped α-quartz crystal, the luminescence associated with the twofold coordinated Ge center (GeODC) in amorphous silica glass doped with germanium, was never observed. In this work, we performed experiments to investigate if a GeODC like luminescence could appear after a γ-irradiation of a Ge-doped α-quartz crystal. The answer is positive: under excitation with pulsed light of an ArF laser (193 nm): a new luminescence with two bands — a blue one associated to a time constant of about 100 μs appears and another one with faster decay of ~ 1.5 ns appears in the ultraviolet part of the spectrum under the same excitation. This last emission has similar characteristics as the GeODC luminescence of silica glass. However, clear differences exist between the radiation-induced center associated with this luminescence and the GeODC. The excitation with a KrF laser does not provide emission with a decay time constant of about 100 μs but provides blue luminescence with a faster decay of about 4 μs. The pulses of the ArF laser also excite this component of decay for the blue band. We attribute this emission to various types of γ-ray created centers in radiation damaged areas of the Ge-doped crystal. Under excitation with an F₂ excimer laser (157 nm), the luminescence of STE near Ge remains in the irradiated sample.