急冷Al-Si-Ge合金超导电性的研究

本文研究了热处理对急冷Al-8.3at%Si-8.5at%Ge合金的微观结构及超导电性的影响。结构分析表明,液态淬火的样品由两相组成:过饱和α-Al(Si,Ge)固溶体基体和Al,Si,Ge的非晶球体,后者在基体中相互连接,构成连续通路。经过100℃/50h热处理后,非晶球体尺寸缩小,不再构成连续通路,并在其中析出弥散的Si(Ge)微晶。热处理后的样品的电阻-温度及电阻-磁场转变曲线上均出现两次正常-超导转变。它可以用样品中存在两个超导相的模型予以解释。 关键词：     

急冷Al-Si超导合金的负磁阻效应

本文研究了热处理对急冷(快速淬火)Al-11.3at％Si共晶合金的微观结构和超导电性的影响。实验发现100℃/50hr退火样品在超导-正常转变区内有负磁阻效应,这表明在这种样品中存在两个超导相。 关键词：     

机械合金化法制备Nb_3Al_(1-x)Si_x

采用机械合金化法制备了一系列的Nb_3Al_(1-x)Si_x(x=0~0.2)多晶样品,利用高能球磨机获得Nb(Al,Si)固溶体,然后在900℃的温度下烧结将固溶体转变为超导相.XRD测试结果表明,经3小时高能球磨后Al和Si固溶到Nb中形成Nb(Al,Si)固溶体,烧结后的样品具有较好的单相性,为A15型晶体结构,并且晶格随掺杂量的增加逐渐减小.磁性测量结果表明,纯样Nb3Al的Tc约为14K,随掺Si量的增加Tc逐渐减小.结合EDX分析,所有Nb_3Al_(1-x)Si_x样品的超导电性来源于A15相,但由于随掺杂量的增加样品中Al的含量逐渐减少导致了Tc逐渐减小.     

急冷Al-lat%Ge过饱和固溶体合金的正常-超导转变特性

本文研究了急冷Al-1at%Ge过饱和固溶体合金的结构和正常-超导转变特性。X射线结构分析表明,样品为单一的过饱和α-Al(Ge)固溶体。电阻-温度测量指出,急冷过饱和α-Al(Ge)合金的T_c≈1.44K,高于纯Al的T_c。 关键词：     

非晶(Fe0.99Mo0.01)78Si9B13,Fe78Si9B13合金激波晶化主相α-Fe变化研究

研究激波对非晶FeBSi,FeMoBSi合金的影响,经X射线衍射分析,测定主晶化相α-Fe(Mo,B,Si)晶格常量.结果表明：晶格常量比正常值偏小,用双势模型计算晶格常量,理论值与实验符合得很好.从而肯定晶格常量变小是形成B的替代式固溶体和缺位式固溶体所致. 关键词：     

高能球磨法制备Nb_3Al超导体

利用高能球磨法制备Nb_3Al超导体,先通过高能球磨法获得Nb(Al)固溶体,然后在不超过1000℃的温度下烧结将Nb(Al)固溶体转变为Nb_3Al超导相,对其成相反应过程展开研究.研究发现高能球磨法能够获得Nb(Al)固溶体,球磨3小时为宜,时间较短不能完全形成固溶体,时间较长使原料粉末非晶化.在烧结过程中,研究了原料组分、烧结温度及时间对制得超导相性能的影响,最终获得初始原料的化学计量比为Nb∶Al=74∶26、烧结温度为900℃、烧结时间为1小时制得的Nb_3Al超导体的Tc最高,达到15.6K.由于Nb_3Al相中的Al含量偏低,导致其Tc偏低.     

纳米晶Fe73.5Cu1Nb3Si13.5B9晶间非晶相结构弛豫与模量的振荡变化

采用X射线衍射(XRD),杨氏模量测量方法研究了非晶态Fe73.5Cu1Nb3Si13.5B9合金500℃等温晶化时,纳米α-Fe(Si)晶相的平均晶粒尺寸(d),晶化体积分数(Vc),杨氏模量(E)随保温时间(t)的变化.d-t关系具有阶梯式长大特征,而E-t关系则呈现相应的周期性变化.分别计算了纳米α-Fe(Si)晶生长前沿非晶区的化学成分以及晶间非晶区平衡化学成分.由Fick扩散方程计算晶间非晶区成分均匀化的时间,与纳米α-Fe(Si)阶梯式长大周期相当.E-t关系的振荡性变化可能是由扩散控制的纳米α-Fe(Si)晶相的阶梯式长大与晶间非晶区周期性弛豫引起的.     

La_4Au亚稳超导相的高压合成

本文报道了利用非晶合金的高压变态,合成新亚稳超导相La_4Au的结果,非晶La_(80)Au_(20)合金是用液态超急冷法制备的,合成条件为80kbar、250℃,该相具有正交结构,晶格参数为α=6.54A,b=7.71A,C=11.32A,超导临界温度Tc达5.5K,高于所有已知La-Au相的值。     

(Bi,Pb)2Sr2Ca2Cu3Oy单相样品的超导电性与载流子浓度

对(Bi,Pb)₂Sr₂Ca₂Cu₃O_y单相样品进行不同条件下的热处理,通过X射线衍射、电阻-温度关系、交流磁化率,以及Hall系数等测量,发现样品均具有较好的单相性,随着热处理条件的变化,其超导转变中点温度(T_c)有规律地分布在100—110K之间,T_c随载流子浓度(n_H)的增加而升高。实验结果表明,热处理条件对样品的相结构、超导 关键词：     

非晶Fe73.5Cu1Nb3Si13.5B9合金激光纳米化的超精细结构研究

在CO2激光功率为50-300W、扫描速度为20mm/s、激光散光斑为20mm照射条件下,诱导非晶Fe73.5Cu1Nb3Si13.5B9带中发生结构重组,产生定量纳米α-Fe(Si)晶相形成双相组织结构材料. 利用穆斯堡尔谱研究了非晶Fe73.5Cu1Nb3Si13.5B9合金激光纳米化的超精细结构. 实验结果表明,激光诱导非晶Fe73.5Cu1Nb3Si13.5B9纳米化后,其超精细磁场的分布随着激光功率变化由单峰向双峰变化,在高功率辐照时, 出现了双峰分布,并且峰位向高场移动. 高激光功率辐照非晶Fe73.5Cu1Nb3Si13.5B9合金纳米晶化相有四种超精细结构,即2个超精细磁场较小的初晶相和2个超精细磁场较大的纳米晶化相. 其中超精细磁场较大(17-25MA/m)的α-Fe(Si)相为DO3结构.     

急冷Al-Si-Ge合金的微观结构及正常-超导转变特性

本文研究了急冷Al-8.3at％Si-8.5at％Ge合金的微观结构及正常-超导转变特性,结构分析表明,样品中存在晶态及非晶态两种不同的区域,经100℃/50hr热处理后,电阻-温度及电阻-磁场转变曲线上均出现明显的台阶。 关键词：     

Si-W/Si/SiO2/Si(100)的横截面电子显微镜研究

本文用横截面电子显微镜法分析了Si-W/Si/SiO₂/Si(100)在440—1000℃退火后的晶化过程,以及各个界面的变化情况.发现Si-W合金膜中,WSi₂并未优先在表面、界面处形成晶核.当退火温度不高于700℃时,反应在合金膜内发生,表面、界面起伏和缓.退火温度高达800—1000℃时,界面、表面出现原子扩散,造成剧烈的界面起伏;表面则出现小的热沟槽,Si/SiO₂界面也出现高分辨电子显微镜才能观察到的起伏.表面、界面的原子迁移的动力来源于晶界与表面、界面张力.由于SiO₂中Si—O键很稳定,不易发生Si和O在界面处的互扩散,所以Si/SiO₂界面起伏很小. 关键词：     

高压下非晶Fe82Si4B14合金的晶化

研究高压对非晶Fe₈₂Si₄B₁₄合金晶化过程的影响,给出常压下与77kbar下的时间-温度-变态图(即T-T-T图)。结果表明:合金晶化温度的压力梯度值随晶化进行的时间长短而改变。常压下晶化时,bcc-Fe(Si)固溶体相先形成;77kbar下晶化时,DOe型Fe₃B与bcc-Fe(Si)固溶体相同时出现。 关键词：     

High-pressure synthesis of A15 Nb3Si phase from amorphous NbSi alloys

An amorphous phase has been produced in a binary Nb-19 at .% Si alloy by rapidly quenching from the molten state. Primary decomposition of the amorphous phase by annealing resulted in the production of a small quantity of the A15 cubic Nb₃Si phase. However, long annealing treatments led to the complete transformation to the equilibrium phases. Application of high pressure of 10 GPa during decomposition of the amorphous phase resulted firstly in the improved stability of the amorphous phase and secondly, in the production of a much larger quantity of the A15 cubic Nb₃Si phase. The lattice parameter of this phase was calculated to be 0.515 nm, in conformity with the previous investigations.     

Crystallization behaviour in a new multicomponent Ti16.6Zr16.6Hf16.6Ni20Cu20Al10 metallic glass developed by the equiatomic substitution technique

A new amorphous Ti_16.6Zr_16.6Hf_16.6Ni₂₀Cu₂₀A1₁₀ alloy has been developed using the novel equiatomic substitution technique. Melt spinning Ti_16.6Zr_16.6Hf_16.6Ni₂₀Cu₂₀A1₁₀ forms an amorphous phase with a large supercooled liquid region, ΔT=70°C. After isothermal annealing within the supercooled liquid region for 3 h at 470°C, the amorphous alloy crystallizes to form a fine-scale distribution of 2–5 nm nanocrystals, and the supercooled liquid region increases to ΔT=108°C. Atomic-scale compositional analysis of this partially crystalline material using a three-dimensional atom probe (3DAP) is unable to detect any compositional difference between the nanocrystals and the remaining amorphous phase. After annealing for 1 hr at 620°C, the amorphous alloy crystallizes to form 20–50nm equiaxed grains of a hexagonal-type C14 Laves phase with lattice parameters a = 5.2Å and c = 9.0 Å. 3DAP analysis shows that this Laves phase has a composition very close to that of the initial amorphous phase, suggesting that the alloy crystallizes via a polymorphic rather than a primary crystallization mechanism, despite the complexity of the alloy composition.     

预注入对Si1-xCx合金形成的影响

室温下在单晶Si中注入(0.6—1.5)at%的C原子,部分样品在C离子注入之前在其中注入²⁹Si⁺离子产生损伤,然后在相同条件下利用高温退火固相外延了Si_1-xC_x合金,研究了预注入对Si_1-xC_x合金形成的影响.如果注入C离子的剂量小于引起Si非晶化的剂量,在950℃退火过程中注入产生的损伤缺陷容易与C原子结合形成缺陷团簇,难于形成Si_1-xC关键词： 离子注入 固相外延 1-xC_x合金')" href="#">Si_1-xC_x合金     

Phase transformation of Ni/Si thin films induced by nanoindentation and annealing

Thin Ni/Si films are prepared by depositing a Ni layer with a thickness of 100 nm on a Si (100) substrate. The as-deposited thin-film specimens are indented to a maximum depth of 500 nm using a nanoindentation technique and are then annealed at temperatures of 200°C, 300°C, 500°C and 800°C for 2 min. The microstructural changes and phases induced in the various specimens are observed using transmission electron microscopy (TEM) and micro-Raman scattering spectroscopy (RSS). Based on the load-displacement data obtained in the nanoindentation tests, the hardness and Young’s modulus of the as-deposited specimens are found to be 13 GPa and 177 GPa, respectively. The microstructural observations reveal that the nanoindentation process prompts the transformation of the indentation-affected zone of the silicon substrate from a diamond cubic structure to a mixed structure comprising amorphous phase and metastable Si III and Si XII phases. Following annealing at temperatures of 200∼500°C, the indented zone contains either a mixture of amorphous phase and Si III and Si XII phases, or Si III and Si XII phases only, depending on the annealing temperature. In addition, the annealing process prompts the formation of nickel silicide phases at the Ni/Si interface or within the indentation zone. The composition of these phases depends on the annealing temperature. Specifically, Ni₂Si is formed at a temperature of 200°C, NiSi is formed at a temperature of 300°C and 500°C, and NiSi₂ is formed at 800°C.