Effects of ultrasonic agitation and surfactant additive on surface roughness of Si (1 1 1) crystal plane in alkaline KOH solution

In the silicon wet etching process, the “pseudo-mask” formed by the hydrogen bubbles generated during the etching process is the reason causing high surface roughness and poor surface quality. Based upon the ultrasonic mechanical effect and wettability enhanced by isopropyl alcohol (IPA), ultrasonic agitation and IPA were used to improve surface quality of Si (1 1 1) crystal plane during silicon wet etching process. The surface roughness R_q is smaller than 15 nm when using ultrasonic agitation and R_q is smaller than 7 nm when using IPA. When the range of IPA concentration (mass fraction, wt%) is 5–20%, the ultrasonic frequency is 100 kHz and the ultrasound intensity is 30–50 W/L, the surface roughness R_q is smaller than 2 nm when combining ultrasonic agitation and IPA. The surface roughness R_q is equal to 1 nm when the mass fraction of IPA, ultrasound intensity and the ultrasonic frequency is 20%, 50 W and 100 kHz respectively. The experimental results indicated that the combination of ultrasonic agitation and IPA could obtain a lower surface roughness of Si (1 1 1) crystal plane in silicon wet etching process.     

Characterization of the channel walls roughness in photonic crystal fibers

We present electron microscope (FEI NanoSEM) and atomic force microscopy measurements of surface roughness in nanochannels in photonic crystal fibers (PCF). A method was invented to cleave the PCF along the axis without damaging the surface structure in the nanochannels allowing us to characterize the morphology of the nanochannels in the PCF. A multi-wall carbon nanotube mounted onto commercial AFM probes and super sharp silicon non-contact mode AFM probes were used to characterize the wall roughness in the nanochannels. The roughness is shown to have a Gaussian distribution, and has an amplitude smaller than 0.5 nm. The height–height correlation function is an exponential correlation function with an autocorrelation length of 13 nm, and 27 nm corresponding with scan sizes of 200×100 nm², and 1600×200 nm², respectively.     

Rapid surface roughness measurements of silicone thin films with different thicknesses

A rapid optical measurement system for rapid surface roughness measurement of polycrystalline silicon (poly-Si) thin films was developed in this study. Two kinds of thickness of poly-Si thin films were used to study rapid surface roughness measurements. Six different incident angles were employed for measuring the surface roughness of poly-Si thin films. The results reveal that the incident angle of 20° was found to be a good candidate for measuring the surface roughness of poly-Si thin films. Surface roughness (y) of poly-Si thin films can be determined rapidly from the average value of reflected peak power density (x) measured by the optical system developed using the trend equation of y = ?0.1876x + 1.4067. The maximum measurement error rate of the optical measurement system developed was less than 8.61%. The savings in measurement time of the surface roughness of poly-Si thin films was up to 83%.     

Surface topographic study of chalcogenide thin films of GexSb(As)40−xS50Te10 glasses

The surface topography and fractal properties of Ge_xSb(As)_40−xS₅₀Te₁₀ (x = 10, 20, 27 at.%) films, evaporated onto glass substrates, have been studied by atomic force microscopic imaging at different scales. The surface of the chalcogenide films is smooth (<5 nm roughness), isotropic and having some particular differences in texture. All films are self-similar with Mean Fractal Dimension in the range of 2.25–2.63. The films with Ge_xSb_40−xS₅₀Te₁₀ composition are more uniform in terms of surface morphology (grains structure) than those with Ge_xAs_40−xS₅₀Te₁₀ composition for which the film surface exhibits a superimposed structure of large particles at x = 10 and 20 at.%.     

Defects related emission and nanosecond optical power limiting in CuS quantum dots

We report optical and nonlinear optical properties of CuS quantum dots and nanoparticles prepared through a nontoxic, green, one-pot synthesis method. The presence of surface states and defects in the quantum dots are evident from the luminescent behavior and enhanced nonlinear optical properties measured using the open aperture Z-scan, employing 5 ns laser pulses at 532 nm. The quantum dots exhibit large effective third order nonlinear optical coefficients with a relatively lower optical limiting threshold of 2.3 J cm⁻², and the optical nonlinearity arises largely from absorption saturation and excited state absorption. Results suggest that these materials are potential candidates for designing efficient optical limiters with applications in laser safety devices.     

Atomic force microscopy enabled roughness analysis of nanostructured poly (diaminonaphthalene) doped poly (vinyl alcohol) conducting polymer thin films

The Atomic Force Microscopy (AFM) helps in evaluating parameters like amplitude or height parameters, functional or statistical parameters and spatial parameters which describe the surface topography or the roughness. In this paper, we have evaluated the roughness parameters for the native poly (vinyl alcohol) (PVA), monomer diaminonaphthalene (DAN) doped PVA, and poly (diaminonaphthalene) (PDAN) doped PVA films prepared in different solvents. In addition, distribution of heights, skewness and Kurtosis moments which describe surface asymmetry and flatness properties of a film were also determined. At the same time line profiles, 3D and 2D images of the surface structures at different scanning areas i.e. 5 × 5 μm² and 10 × 10 μm² were also investigated. From the roughness analysis and the surface skewness and coefficient of Kurtosis parameters, it was concluded that for PVA film the surface contains more peaks than valleys and the PDAN doped PVA film has more valleys than peaks. It was also found that the PDAN doped PVA film with acetonitrile solvent was used for substrate in electronics applications because the film gives less fractal morphology. Thus, the AFM analysis with different parameters suggested that the PDAN doped PVA films are smooth at the sub-nanometer scale.     

Influence of growth temperature and deposition duration on the structure,surface morphology and optical properties of InN/YSZ (1 0 0)

InN films with the wurtzite structure have been grown directly on YSZ (1 0 0) substrate by the RF-magnetron sputtering technique. Strongly (0 0 2) oriented films with smooth surfaces (0.7–2.9 nm surface roughness depending on substrate temperature), were grown within 30 min. Films deposited for 60 min developed three-dimensional (3D) pyramidal islands on top of their surfaces, which diminished the residual elastic strain. The optical absorption edge and PL peak energy around 1.7 eV were found to redshift with increasing film thickness and substrate temperature.     

Effects of surface mechanical attrition treatment (SMAT) on a rough surface of AISI 316L stainless steel

Surface mechanical attrition treatment (SMAT) improves mechanical properties of metallic materials through the formation of nanocrystallites at their surface layer. It also modifies the morphology and roughness of the work surface. Surface roughening by the SMAT has been reported previously in a smooth specimen, however in this study the starting point was a rough surface and a smoothening phenomenon is observed. In this paper, the mechanisms involved in the surface smoothening of AISI 316L stainless steel during the SMAT are elucidated. The SMAT was conducted on a specimen with a roughness of R_a = 3.98 μm for 0–20 min. The size of milling balls used in the SMAT was varied from 3.18 mm to 6.35 mm. The modification of subsurface microhardness, surface morphology, roughness and mass reduction of the specimen due to the SMAT were studied. The result shows the increasing microhardness of the surface and subsurface of the steel due to the SMAT. The impacts of milling balls deform the surface and produce a flat-like structure at this layer. Surface roughness decreases until its saturation is achieved in the SMAT. The mass reduction of the specimens is also detected and may indicate material removal or surface erosion by the SMAT. The size of milling ball is found to be the important feature determining the pattern of roughness evolution and material removal during the SMAT. From this study, two principal mechanisms in the evolution of surface morphology and roughness during the SMAT are proposed, i.e. indentation and surface erosion by the multiple impacts of milling balls. A comparative study with the results of the previous experiment indicates that the initial surface roughness has no influence in the work hardening by the SMAT but it does slightly on the saturated roughness value obtained by this treatment.     

The effect of Ag layer thickness on the properties of WO3/Ag/MoO3 multilayer films as anode in organic light emitting diodes

Transparent conductive WO₃/Ag/MoO₃ (WAM) multilayer electrodes were fabricated by thermal evaporation and the effects of Ag layer thickness on the optoelectronic and structural properties of multilayer electrode as anode in organic light emitting diodes (OLEDs) were investigated using different analytical methods. For Ag layers with thickness varying between 5 and 20 nm, the best WAM performances, high optical transmittance (81.7%, at around 550 nm), and low electrical sheet resistance (9.75 Ω/cm²) were obtained for 15 nm thickness. Also, the WAM structure with 15 nm of Ag layer thickness has a very smooth surface with an RMS roughness of 0.37 nm, which is suitable for use as transparent conductive anode in OLEDs. The current density?voltage?luminance (J?V?L) characteristics measurement shows that the current density of WAM/PEDOT:PSS/TPD/Alq₃/LiF/Al organic diode increases with the increase in thickness of Ag and WO₃/Ag (15 nm)/MoO₃ device exhibits a higher luminance intensity at lower voltage than ITO/PEDOT:PSS/TPD/Alq₃/LiF/Al control device. Furthermore, this device shows the highest power efficiency (0.31 lm/W) and current efficiency (1.2 cd/A) at the current density of 20 mA/cm², which is improved 58% and 41% compared with those of the ITO-based device, respectively. The lifetime of the WO₃/Ag (15 nm)/MoO₃ device was measured to be 50 h at an initial luminance of 50 cd/m², which is five times longer than 10 h for ITO-based device.     

Laser welding of structural steels: Influence of the edge roughness level

Laser welding continues to become more extensively used in many industrial applications and in the last 10 years an increasing number of studies have examined ways to increase the efficiency of the process. This study investigates the influence of joint edge surface roughness on weld quality and penetration depth. The characteristics are investigated of welded samples of two low alloyed steels, S355 and St 3, of 20 mm thickness with various joint edge surface roughness levels in butt joint configuration. Welding was performed with different fiber lasers with a wavelength of 1070 nm at power levels from 10 to 15 kW. The absorption characteristics were evaluated at 10 kW power level using a calorimeter. There was a significant positive correlation between edge surface roughness level and the penetration depth. Optimum roughness levels to provide maximum penetration depth are presented. The highest penetration depth at power levels of 14 and 10 kW was achieved at R_a=6.3 μm.     

56 dB Gain EYDFA with improved noise figure with dual-stage partial double pass configuration

An efficient erbium/ytterbium co-doped fiber amplifier (EYDFA) is demonstrated by using a dual-stage partial double pass structure with a band pass filter (BPF). The amplifier achieves the maximum small signal gain of 56 dB and the corresponding noise figure of 4.66 dB at 1536 nm with an input signal power and total pump power of ?50 dBm and 140 mW, respectively. Compared with a conventional single-stage amplifier, the maximum gain enhancement of 16.99 dB is obtained at 1544 nm with the corresponding noise figure is improved by 2 dB. The proposed amplifier structure only uses a single pump source with a partial double pass scheme to provide a high gain and dual-stage structure to provide the low noise figure.     

Dual-stage L-band erbium-doped fiber amplifier with distributed pumping from single pump laser

A dual-stage L-band erbium-doped fiber amplifier with a flat gain bandwidth over 36 nm is demonstrated using pump distribution technique. The pump power was distributed to two stages depending on the splitting ratio and the length of erbium-doped fiber that was used for this configuration. Both parameters are the key components for achieving a substantially flat gain response throughout the L-band region ranging from 1570 nm to 1605 nm. Although the input signal power was varied from ? 30 dBm to 0 dBm, gain of 17 dB with slight variations of less than 1.5 dB and a noise figure of less than 6.7 dB were achieved. All the results obtained show better performances when comparison was made with the conventional single-stage L-band optical amplifier.     

Influence of UV light irradiation on film thickness distribution of tin oxide films by photochemical vapour deposition

Tin oxide (non-doped) films have been prepared by a photochemical vapour deposition (photo-CVD) from Tetramethyltin (TMT) (Sn(CH₃)₄) and O₂ (containing O₃). A low-pressure mercury lamp was used as the light source. The effect of the UV light irradiation on the film thickness distribution along 5 cm×5 cm area was examined. By piling Teflon films on the surface of the suprasil window, the light intensity of 184.9 nm UV wavelength of the low-pressure mercury lamp was controlled, while that of 253.7 nm wavelength through the Teflon hardly changed. As a result, the uniformity of the film thickness distribution was improved as the light intensity (184.9 nm) increased. The UV 184.9 nm light irradiation may have improved the uniformity of the reactive species distribution in the vapour phase, which may result in the formation of the uniform thickness distribution.     

Design of the chirped Mo/Si multilayer mirror with SiC capping layer in extreme ultraviolet region

The design procedures were discussed in detail for a normal incident chirped Mo/Si multilayer mirror with Group Delay Dispersion (GDD) of ?3600 as² in the wavelength region of 13–17 nm. The GDD was calculated using an analytical approach by fitting the optical constants of the coating materials in the wavelength range of 12.8–17.2 nm, respectively. The final structure of the chirped mirror was obtained by using the simplex algorithm from the initial structure obtained by the genetic algorithm based on structure generated by a random generator. After considering the interfacial roughness and layers thickness deviation, the effects on the reflectivity and the GDD were discussed. It was found that the average reflectivity decreases from 5.98% to 4.22% and the average GDD decreases from ?3561.86 as² to ?3462.03 as², the vibration of GDD were larger than that of the reflectivity. The reflectivity was affected greatly by the 9th layer and the GDD was affected greatly by the 25th layer when each layer thickness changes ±0.2 nm. Compared with the GDD, the reflectivity was affected greatly by the layer thickness error.     

Rapid optical measurement of surface texturing result of crystalline silicon wafers for high efficiency solar cells application

Surface texturing of crystalline silicon (c-Si wafers) wafers is a frequently used technique in high efficiency solar cells processing to reduce the light reflectance. Measuring the surface texturing result is important in the manufacturing process of high efficiency solar cells because the surface texturing of c-Si wafers is sensitive to the performance of reducing front reflection. Traditional approach for measuring surface roughness of texturing of c-Si wafers is atomic force microscopy. The disadvantage of this approach include long lead-time and slow measurement speed. To solve this problem, an optical inspection system for rapid measuring the surface roughness of texturing of c-Si wafers is proposed in this study. It is found that the incident angle of 60° is a good candidate for measuring surface roughness of texturing of c-Si wafers and y = ?188.62x + 70.987 is a trend equation for predicting the surface roughness of texturing of c-Si wafers. Roughness average (Ra) of texturing of c-Si wafers (y) can be directly determined from the peak power density (x) using the optical inspection system developed. The results were verified by atomic force microscopy. The measurement error of the optical inspection system developed is approximately 0.89%. The saving in inspection time of the surface roughness of texturing of c-Si wafers is up to 87.5%.     

Effect of the surface oxidization and nitridation on the normal spectral emissivity of titanium alloys Ti–6Al–4V at 800–1100 K at a wavelength of 1.5 μm

This work strived to model the effect of surface oxidization and nitridation on the normal spectral emissivity of Ti–6Al–4V alloys at a temperature range of 800–1100 K and a wavelength of 1.5 μm. In experiments, the detector was as close to perpendicular to the surface of the specimens as possible so that only the normal spectral emissivity was measured. Two thermocouples were symmetrically welded near the measuring area for accurate measuring and monitoring of the temperature at the surface of the specimen. The specimens were heated for 6 h at a certain temperature. During this period, the normal spectral emissivity values were measured once every 1 min during the initial 180 min, and once every 2 min thereafter. The measurements were made at certain temperatures from 800 to 1100 K in intervals of 20 K. One strong oscillation in the normal spectral emissivity was observed at each temperature. The oscillations were formed by the interference between the radiation stemming from the oxidization and nitridation layer on the specimen surface and radiation from the substrate. The uncertainty in the normal spectral emissivity caused only by the surface oxidization and nitridation was found to be approximately 9.5–22.8%, and the corresponding uncertainty in the temperature generated only by the surface oxidization and nitridation was approximately 6.9–15.5 K. The model can reproduce well the normal spectral emissivity, including the strong oscillation that occurred during the initial heating period.     

Measurement of optical and surface properties of PLZT thin films

Lanthanum-modified lead zirconate titanate (Pb_0.93La_0.07(Zr_0.3Ti_0.7)_0.93O₃, PLZT7/30/70) thin films with and without a seeding layer of PbTiO₃ (PT) were successfully deposited on indium-doped tin oxide (ITO) coated glass substrate via spin coating in conjunction with a sol–gel process, and a top transparent conducting thin film of SnO₂ was also prepared in the same way. The thicknesses of PLZT and PT layers are 0.5 μm and 24 nm, respectively. The retardance of PLZT film was measured by a new heterodyne interferometer and enhanced by application of a seeding layer of PT. The Pockels linear electro-optical coefficient of PLZT film with a PT layer was determined to be 3.17 × 10^?9 m/V when the refractive index is considered as 2.505, which is one order larger than 1.4 × 10^?10 m/V for PLZT12/40/60 doped with Dy reported in the literature. The root-mean-square (rms) roughness of PLZT thin film with a PT layer (R_rms = 6.867 nm) was larger than that of PLZT film (R_rms = 0.799 nm). From the comparisons, the average transmittance of PLZT film with a PT seeding layer was 77.01%, which was a little smaller than that of PLZT film (around 80.75%). Experimental results imply that the PT seeding layer plays a key role in the increase of retardance value, leading to a higher Pockels coefficient.     

Comparative study on the effects of different annealing conditions on the surface morphology,crystallinity, and optical properties of ZnO micro/nanoparticle-based discs

The effects of annealing parameters on the surface morphology, crystallinity, and optical properties of ZnO disc were investigated. Variations in the annealing temperatures and gas flow rates were found to have a profound impact; grain growth was enhanced even at the low annealing temperature of only 400 °C. SEM and AFM revealed smooth and uniform grain growth after annealing treatment, especially at 800 °C. A unique secondary growth of ZnO nanoparticles and multilayer grain growth that have not been reported elsewhere were also observed. The annealing treatment was also found to improve grain crystallinity as illustrated by the lowering of intrinsic compressive stress based on the XRD lattice constant and FWHM data. The PL spectra of the M-Disc showed a huge band edge emission at 371–376 nm. In contrast, the N-Disc exhibited a dominant and broad visible PL emission in the green band with peaks at 519–533 nm. These peaks were attributed to a very high concentration of structural defects (oxygen vacancies and zinc/oxygen interstitials). The annealing conditions had a significant effect on the properties of ZnO. Increased percentage of oxygen in the O/Ar from 50% to 100% did not change the M-Disc spectra. However, the XRD pattern of the N-Disc revealed that the (0 0 2) peak intensity decreased, the position of the (1 0 1) peak slightly shifted toward a higher angle, and the FWHM of the (1 0 1) peak improved. The experimental results showed that thermal annealing could enhance the different properties of ZnO discs.     

Efficient end-pumped Q-switched 1053 nm Nd:YLF laser with a plane-parallel resonator

In this study, a compact and efficient Nd:YLF laser at 1053 nm has been reported without inserting optical intracavity element to suppress the stronger line of 1047 nm. According to theoretical analysis and calculation, the thermal focal length of 1047 nm is negative while that of 1053 nm is positive in plane-parallel resonator. Hence 1053 nm laser was stable in this cavity. In our experiment, 7.5 W laser output at σ-polarized 1053 nm has been obtained with optical–optical efficiency of 38.8%. As the pulse repetition rate is 20 kHz, the pulse width is 50 ns and the peak power is calculated to be 7.5 kW.     

Numerical analysis of a broadband spectrum generated in a standard fiber by noise-like pulses from a passively mode-locked fiber laser

This paper covers a numerical analysis of supercontinuum spectrum generation in a piece of standard fiber by using as the pump noise-like pulses produced by a passively mode-locked fiber laser. An experimental study was also carried out, yielding results that support the numerical results. In the numerical study we estimated that the spectral extension of the generated supercontinuum reaches ~ 1000 nm, and that it presents a high flatness over a region of ~ 220 nm (1630 nm-1850 nm) when we use as the pump noise-like pulses with a wide optical bandwidth (~ 50 nm) and a peak power of ~ 2 kW. Experimentally, the output signal spectrum extends from ~ 1530 nm to at least 1750 nm and presents a high flatness over a region of 1640 nm to 1750 nm for the same value of numerical input power, 1750 nm being the upper limit of the optical spectrum analyzer. The numerical analysis presented here is thus an essential part to overcome the severe limitation in measuring capabilities and to understand the phenomena of supercontinuum generation, which is mainly related to Raman self-frequency shift. Finally, this work demonstrates the potential of noise-like pulses from a passively mode-locked fiber laser for broadband spectrum generation.