应力对石墨烯热输运性质影响的分子动力学模拟

本文建立了低维薄膜材料导热模型,运用非平衡分子动力学模拟的方法,利用lanmmps软件对单层石墨烯纳米带的导热特性进行仿真分析,根据Fourier定律计算热导率,再对石墨烯纳米带的原子施加一定耦合应力场,把应力耦合作用下的石墨烯热导率与正常的石墨烯纳米带进行了对比研究,模拟数据结果表明:在石墨烯纳米带上施加耦合应力时,会导致石墨烯纳米带热导率升高,且随应力增加而增大,模拟范围内热导率升高2.61倍,并且应力方向会对热导率变化产生一定影响,这个研究为纳米尺度上石墨烯相关研究和进一步提升热导率提供了新思路.     

多约束纳米结构的声子热导率模型研究

纳米技术的快速发展使得对微纳尺度导热机理的深入研究变得至关重要. 理论和实验都表明, 在纳米尺度下声子热导率将表现出尺寸效应. 基于声子玻尔兹曼方程和修正声子平均自由程的方法得到了多约束纳米结构的声子热导率模型, 可以描述多个几何约束共同作用下热导率的尺寸效应. 不同几何约束对声子输运的限制作用可以分开计算, 总体影响则通过马西森定则进行耦合. 对于热流方向的约束, 采用扩散近似的方法求解声子玻尔兹曼方程; 对于侧面边界约束, 采用修正平均自由程的方法计算边界散射对热导率的影响. 得到的模型能够预测纳米薄膜(法向和面向)及有限长度方形纳米线的热导率随相应特征尺寸的变化. 与蒙特卡罗模拟及硅纳米结构热导率实验值的对比验证了模型的正确性.     

氮掺杂和空位对石墨烯纳米带热导率影响的分子动力学模拟

石墨烯是近年纳米材料研究领域的一个热点,其独特的热学性质受到了广泛关注,为了实现对石墨烯传热特性的预期与可控,利用氮掺杂和空位缺陷对石墨烯进行改性.采用非平衡态分子动力学方法研究了扶手形石墨烯纳米带中氮掺杂浓度、位置及空位缺陷对热导率影响并从理论上分析了热导率变化原因.研究表明氮掺杂后石墨烯纳米带热导率急剧下降,氮浓度达到30%时,热导率下降了75.8%;氮掺杂位置从冷浴向热浴移动过程中,热导率先近似的呈线性下降后上升;同时发现单原子三角形氮掺杂结构比多原子平行氮掺杂结构对热传递抑制作用强;空位缺陷的存在降低了石墨烯纳米带热导率,空位缺陷位置从冷浴向热浴移动过程中,热导率先下降后上升,空位缺陷距离冷浴边缘长度相对于整个石墨烯纳米带长度的3/10时,热导率达到最小.石墨烯纳米带热导率降低的原因主要源于结构中声子平均自由程和声子移动速度随着氮掺杂浓度、位置及空位缺陷位置的改变发生了明显变化.这些结果有利于纳米尺度下对石墨烯传热过程进行调控及为新材料的合成应用提供了理论支持.     

水基ZnO纳米流体电导和热导性能研究

利用水热法生成了形状规则、粒径均匀的球形ZnO纳米颗粒, 并超声分散于水中, 制备得到稳定的水基ZnO纳米流体. 实验测量水基ZnO纳米流体在体积分数和温度变化时的电导率, 并测试室温下水基ZnO纳米流体在不同体积分数下的热导率. 实验结果表明, ZnO纳米颗粒的添加较大地提高了基液(纯水)的热导率和电导率, 水基ZnO纳米流体的电导率随纳米颗粒体积分数增加呈非线性增加关系, 而电导率随温度变化呈现出拟线性关系; 纳米流体的热导率与纳米颗粒体积分数增加呈近似线性增加关系. 本文在经典Maxwell热导模型和布朗动力学理论的基础上, 同时考虑了吸附层、团聚体和布朗运动等因素对热导率的影响, 提出了热导率修正模型.将修正模型预测值与实验值对比, 结果表明修正模型可以较为准确地计算出纳米流体的热导率. 关键词： 水热法 电导率 热导率 热导模型     

不同温度条件下单层石墨烯纳米带弛豫性能的分子动力学研究

分别采用Tersoff-Brenner势和AIREBO势,对三种长宽比的单层石墨烯纳米带在不同热力学温度(0.01—4000 K)下的弛豫性能进行了分子动力学模拟.对基于两种势函数模拟的石墨烯纳米带弛豫的能量曲线和表面形貌进行了分析对比,研究了石墨烯纳米带在弛豫过程中的动态平衡过程.模拟结果表明:单层石墨烯纳米带并非完美的平面结构,边缘处和内部都会呈现一定程度的起伏和皱褶,这与已有的实验结果相符合;石墨烯纳米带的表面起伏程度随长宽比的减小而减小,并且在不同温度条件下,系统动能对石墨烯纳米带的弛豫变形的影响很大,即系统温度越高,石墨烯纳米带的弛豫变形幅度愈大;高长宽比纳米带在一定温度条件下甚至会出现卷曲现象.最后,对采用Tersoff-Brenner势和AIREBO势进行石墨烯的分子动力学模拟进行了深入分析.     

不同硼掺杂几何形态下石墨烯纳米带热导率与热整流的分子动力学研究

通过非平衡态分子动力学方法,研究了锯齿形石墨烯纳米带中掺杂原子硼的两种不同位置排列（三角形硼掺杂和平行硼掺杂）对热导率和热整流的影响并从理论上分析了其变化的原因。研究表明这两种硼掺杂模型在不同温度下导致石墨烯纳米带热导率大约54%-63%的下降;同时发现平行硼掺杂结构对热传递的抑制作用强于三角形硼掺杂结构;硼掺杂结构降低热导率的作用随着温度的升高逐渐减小;三角形硼掺杂结构两个方向上的热导率值具有较大差异,这种结构下的热整流随着温度的上升呈现减弱的趋势;而平行硼掺杂结构两个方向上的热导率值近乎相等,热整流现象表现不明显.     

空位缺陷对碳纳米管/石墨烯纳米带导热的影响

本文利用分子动力学方法研究空位缺陷对碳纳米管和石墨烯纳米带导热特性的影响,并分析声子态密度、声子模式参与率探究导热机理。研究表明:空位缺陷引起碳管和纳米带热导率降低,在200～600 K的温度范围内,碳管和纳米带热导率的下降幅度分别可达47.57%、38.84%.碳管和纳米带热导率的降低归因于声子态密度衰减且声子模式参与率较小.由于边界散射作用削弱了缺陷对纳米带热导率的影响,纳米带热导率的降低幅度低于碳管.     

纳米多孔氩薄膜热导率的分子动力学模拟

利用经典的Lennard-Jones势能模型,采用分子动力学模拟方法研究纳米多孔氩薄膜热导率.结果表明,纳米多孔氩薄膜热导率明显小于同温度下纯纳米氩薄膜热导率,并且孔隙率越大热导率减小越多.借助基于并联方法的有效热导率模型,对纳米多孔氩薄膜的热导率随孔隙率的变化进行解释.模拟结果还发现,薄膜内的多孔分布对薄膜的热导率有影响.     

不同硼掺杂几何形态下石墨烯纳米带热导率与热整流的分子动力学研究

通过非平衡态分子动力学方法,研究了锯齿形石墨烯纳米带中掺杂原子硼的两种不同位置排列（三角形硼掺杂和平行硼掺杂）对热导率和热整流的影响并从理论上分析了其变化的原因。研究表明这两种硼掺杂模型在不同温度下导致石墨烯纳米带热导率大约54％－63％的下降;同时发现平行硼掺杂结构对热传递的抑制作用强于三角形硼掺杂结构;硼掺杂结构降低热导率的作用随着温度的升高逐渐减小;三角形硼掺杂结构两个方向上的热导率值具有较大差异,这种结构下的热整流随着温度的上升呈现减弱的趋势;而平行硼掺杂结构两个方向上的热导率值近乎相等,热整流现象表现不明显。     

石墨烯纳米带量子点中的量子混沌现象

在20 mK的极低温下测量了石墨烯纳米带量子点的电子输运性质,观测到清晰的库仑阻塞菱形块和对应量子点激发态的电导峰.对库仑阻塞近邻电导峰间距和峰值进行了统计分析,发现其统计分布分别满足无规矩阵理论描述的Wigner-Dyson分布和Porter-Thomas分布,说明石墨烯纳米带量子点在低温下出现了量子混沌现象.还讨论了这种长方形量子点中量子混沌的可能成因. 关键词： 石墨烯纳米带 量子点 库仑阻塞 量子混沌     

Controlling Thermal Conductivity of Few-Layer Graphene Nanoribbons by Using the Transversal Pressure

We study the thermal transport of few-layer graphene nanoribbons in the presence of the transversal pressure by using molecular dynamics simulations. It is reported that the pressure can improve the thermal conductivity of few-layer graphene nanoribbons. This improvement can reach 37.5% in the low temperature region. The pressure dependence of thermal conductivity is also investigated for different length, width and thickness of few-layer graphene. Our results provide an alternative option to tuning thermal conductivity of few-layer graphene nanoribbons. Furthermore, it maybe indicate a so-called pressure-thermal effect in nanomaterials.     

Controlling Thermal Conductivity of Few-Layer Graphene Nanoribbons by Using the Transversal Pressure

We study the thermal transport of few-layer graphene nanoribbons in the presence of the transversal pressure by using molecular dynamics simulations.It is reported that the pressure can improve the thermal conductivity of few-layer graphene nanoribbons.This improvement can reach 37.5%in the low temperature region.The pressure dependence of thermal conductivity is also investigated for diferent length,width and thickness of few-layer graphene.Our results provide an alternative option to tuning thermal conductivity of few-layer graphene nanoribbons.Furthermore,it maybe indicate a so-called pressure-thermal efect in nanomaterials.     

Specific heat of graphene nanoribbons

We studied the specific heat of graphene nanoribbons (GNRs) using an extended force constant model. We found that at low temperature, the specific heat decreases, and its variation with temperature increases with increasing GNR width. However, the specific heat increases with increasing GNR width after crossing a chaotic region. Free boundary conditions, -CHOH-terminated and armchair-edge-induced phonon nondegeneracy, shift and distortion and localized vibrational modes significantly influence GNR specific heat compared with periodic boundary conditions and bare and zigzag edges in GNRs. Finally, we found a uniform expression for specific heat vs. width at every temperature except for the chaotic region.     

Electronic thermal conductivity of armchair graphene nanoribbons and zigzag carbon nanotubes

Through the Green's function formalism and tight-binding Hamiltonian model calculations, the temperature dependent electronic thermal conductivity (TC) for different diameters of zigzag carbon nanotubes and their corresponding unzipped armchair graphene nanoribbons is calculated. All functional temperature dependencies bear crossovers, for which, at higher temperatures, nanotubes have a slightly higher TC than their derived nanoribbons, while below that crossover, both systems exhibit a significant coincidence over a moderate range of lower temperatures. Noticeably, TC decreases with increasing the width or diameter of the corresponding systems. Also, at low temperatures TC is proportional to the density of states around the Fermi level, and thus increasing for metal or semiconductors of narrower gap cases.     

Edge-modified zigzag-shaped graphene nanoribbons: Structure and electronic properties

Control of the band gap of graphene nanoribbons is an important problem for the fabrication of effective radiation detectors and transducers operating in different frequency ranges. The periodic edge-modified zigzag-shaped graphene nanoribbon (GNR) provides two additional parameters for controlling the band gap of these structures, i.e., two GNR arms. The dependence of the band gap E _g on these parameters is investigated using the π-electron tight-binding method. For the considered nanoribbons, oscillations of the band gap E _g as a function of the nanoribbon width are observed not only in the case of armchair-edge graphene nanoribbons (as for conventional graphene nanoribbons) but also for zigzag GNR edges. It is shown that the change in the band gap E _g due to the variation in the length of one GNR arm is several times smaller than that due to the variation in the nanoribbon width, which provides the possibility for a smooth tuning of the band gap in the energy spectrum of the considered graphene nanoribbons.     

Effect of triangular vacancy defect on thermal conductivity and thermal rectification in graphene nanoribbons

We investigate the thermal transport properties of armchair graphene nanoribbons (AGNRs) possessing various sizes of triangular vacancy defect within a temperature range of 200–600 K by using classical molecular dynamics simulation. The results show that the thermal conductivities of the graphene nanoribbons decrease with increasing sizes of triangular vacancy defects in both directions across the whole temperature range tested, and the presence of the defect can decrease the thermal conductivity by more than 40% as the number of removed cluster atoms is increased to 25 (1.56% for vacancy concentration) owing to the effect of phonon–defect scattering. In the meantime, we find the thermal conductivity of defective graphene nanoribbons is insensitive to the temperature change at higher vacancy concentrations. Furthermore, the dependence of temperatures and various sizes of triangular vacancy defect for the thermal rectification ration are also detected. This work implies a possible route to achieve thermal rectifier for 2D materials by defect engineering.     

Layer and size dependence of thermal conductivity in multilayer graphene nanoribbons

Using nonequilibrium molecular dynamics method (NEMD), we have found that the thermal conductivity of multilayer graphene nanoribbons monotonously decreases with the increase of the number of layers which can be attributed to the phonon resonance effect of out-of-plane phonon modes. The reduction of thermal conductivity is proportional to the layer size, which is caused by the increase of phonon resonance. The results clearly show the dimensional evolution of thermal conductivity from quasi-one dimension to higher dimensions in graphene nanoribbons.     

Unexpected large thermal rectification in asymmetric grain boundary of graphene

We have investigated the lattice thermal transport across the asymmetric tilt grain boundary between armchair and zigzag graphene by nonequilibrium molecular dynamics (NEMD). We have observed significant temperature drop and ultra-low temperature-dependent thermal boundary resistance. More importantly, we find an unexpected thermal rectification phenomenon. The thermal conductivity and Kapitza conductance is direction-dependent. The effect of thermal rectification could be amplified by increasing the difference of temperature imposed on two sides. Our results propose a promising kind of thermal rectifier and phonon diodes based on polycrystalline graphene without delicate manipulation of the atomic structure.     

Conductance of bilayer graphene nanoribbons with different widths

The electronic and transport properties of bilayer graphene nanoribbons with different width are investigated theoretically by using the tight-binding model. The energy dispersion relations are found to exhibit significant dependence on the interlayer interactions and the geometry of the bilayer graphene nanoribbons. The energy gaps are oscillatory with the upper ribbon displacement. For all four types of bilayer graphene nanoribbons, the bandgaps touch the zero value and exhibit semiconductor–metal transitions. Variations in the electronic structures with the upper ribbon displacement will be reflected in the electrical and thermal conductance. The chemical-potential-dependent electrical and thermal conductances exhibit a stepwise increase and spike behavior. These conductances can be tuned by varying the upper ribbon displacement. The peak and trench structures of the conductance will be stretched out as the temperature rises. In addition, quantum conductance behavior in bilayer graphene nanoribbons can be observed experimentally at temperature below 10 K.