拉伸应变对Bi2223/Ag带材Ic不均匀性的影响

研究了Bi2223/Ag带材的Ic和n值沿带长方向的不均匀性在拉伸应变下的变化。结果表明,Ic和n值的大小并不是逐点一一对应的;当应变小于不可逆拉伸应变时,Ic随应变增加缓慢下降,n值随应变增加缓慢下降并有小幅震荡;Ic的均匀度随应变增加基本上没有变化,n值的均匀度随应变增加变好并有小幅振荡,而且变化范围很小。     

Thickness dependence of photoconductivity in tellurium

Photoconductive infrared response has been investigated in bulk monocrystalline and thin film polycrystalline undoped tellurium samples at 77K at wavelengths between about 1 and 4.5μm. Thickness dependence of the response has been specifically investigated and found to be consistent with the calculated results.     

高温超导带材临界电流角度依赖性测量分析

第二代高温超导带材与第一代相比,有着载流能力强、交流损耗低、无需贵金属等优点,在超导电力应用中有广阔前景。高温超导带材临界电流在外磁场的影响下会发生衰减,超导带材临界电流的角度依赖性是超导电力装备设计必不可少的参数。实验选取温度50～77 K、磁场0～3.5 T、磁场角度0～360°区间,分别测量了上海超导、苏州新材料等厂家生产的市面主流第二代高温超导带材的临界电流,分析了不同背景磁场大小及角度下超导带材的各向异性。结果表明,各厂家生产的超导带材具有明显的各向异性。     

Frequency dependence of AC loss in Bi(2223)Ag-sheathed tapes

The AC self-field loss in Bi(2223)Ag-sheathed tapes with different number of filaments has been measured between 59 and 2500 Hz by means of a dual lock-in amplifier. Due to the wide frequency range of the measurements, we have been able to dissociate quantitatively the different self-field loss contributions: hysteretic, eddy current and resistive loss (near I_c). This is an important advantage compared to single frequency measurements where such loss dissociation is only qualitative. The hysteresis losses of the different tapes fall between Norris' predictions for elliptical and strip cross-section. The relative weight of eddy current loss is found to be inversely proportional to the current ratio—the higher the i, the less is their contribution. Frequency-independent resistive loss due to flux-creep is observed for high currents at low frequencies; this loss becomes quickly negligible with the increasing frequency.     

Thickness dependence of elastic modulus of polycarbonate interphase

The oligomer of bis-phenol A (oligo-PC) with M _w = 1300 and bis-phenol A polycar-bonate (PC) with M _w = 20 000 were deposited onto E-glass surface using SiCl₄ as the grafting and cross-linking agent. Thickness of the deposited layers was varied from 30 to 10⁶ nm and the layers were investigated as prepared and after thermal annealing at 245°C for 10 min in the air. Vibrational piezoelectric resonator technique and the speed of Rayleigh wave measurement were used to determine elastic moduli of the ultra thin layers deposited on flat E-glass substrate as a function of their thickness. In all cases, increase of the Young modulus of the interphase, E _i, with decreasing layer thickness, t _i, was observed. At a given thickness, the E _i of PC layer was significantly lower than that for the oligo-PC layer. Thermal annealing of the deposited PC layer resulted in a significant increase of its E _i compared to the as received layer. No significant change was observed for oligo-PC interphases. Increase of the shear strength of the interface, τ _a, with reducing interphase thickness, t _i, was observed. The observed increase of E _i with the decreasing t _i was ascribed to the reduction of the molecular mobility of chains near solid surface compared to their mobility in the bulk. Most probably, the observed increase of E _i after thermal annealing of PC was caused by rearrangement of both segment density distribution in individual PC coils near the solid surface and cooperative rearrangements of multiple PC chains. Since the oligomers attached to the surface attained presumably more regular extended conformations with lower conformation entropy compared to the PC random coils, the effect of thermal annealing was negligible. In agreement with theoretical predictions, increase of E _i at the same extent of interfacial interactions resulted in the observed increase of the τ _a measured using the single embedded fiber test.     

Temperature dependence of electrical conductivity and thermoelectric power of Bi-Sb tapes prepared by liquid quenching

Electrical conductivity and thermoelectric power of liquid-quenched Bi-Sb tapes with Sb concentration in the range 8 to 18 at.% are reported between 77K and room temperature. Analysis of the data shows that the total electrical conductivity of these tapes is determined by a temperature-independent component due to band conduction, and a strongly temperature-dependent part due to carrier transport across or through the defect states. These defect states which appear to originate from structural imperfections and disorders due to rapid cooling, are formed close to the mobility edge within a small energy range.     

Temperature dependence of transport ac losses in Bi-2223/Ag multifilamentary tapes

Temperature dependence of transport ac losses in two Bi-2223/Ag multifilamentary tapes with different dc current–voltage characteristics was measured using a lock-in technique at power frequencies. At each temperature, different criteria for critical current determination were used. Comparisons of normalised ac losses with predictions of theoretical models for a tape with elliptical cross-section and a thin strip were made. It was found that the form of the current–voltage characteristic and the critical current criterion play an important role in comparison with theoretical data. A new normalisation procedure of ac loss data is proposed.     

Thickness dependence of magnetic anisotropic properties of FeCoNd films

The magnetic FeCoNd films with thickness (t) from 50 to 166 nm were fabricated by RF magnetron co-sputtering at ambient condition. The amorphous structures of all of the films were investigated by X-ray diffraction and transmission electron microscopy. A spin reorientation transition from in-plane single domain state to out-of-plane stripe domain state was observed as a function of t. When t is below a critical thickness, magnetic moments lie in the film plane corresponding to in-plane single domain state because of the strong demagnetization energy. However, when t is increased, out-of-plane stripe domain structure was developed due to a dominated perpendicular magnetic anisotropy. Scanning electron microscopy data indicate that the perpendicular anisotropy, which is responsible for the formation of stripe domains, may result from the shape effect of the columnar growth of the FeCo grains.     

Thickness dependence of kink temperature and band bending in amorphous silicon

This paper reports the thickness and temperature dependence of the conductivity for dc glow-discharge amorphous silicon (a-Si : H) films. It is found that the kink temperature, at which an abrupt change of activation energy occurs, rapidly increases for the samples thinner than 0.24 μm and that this phenomenon can be used to determine the depth of surface band bending.     

Thickness and hole-shape dependence of flux penetration into square superconducting networks

We have observed flux penetrations into square superconducting networks of Nb with various thicknesses and hole-shapes by using magneto-optical imaging method. The penetrated pattern does not depend on the thickness and extends along diagonal direction when the samples have smaller area in the intersection of networks. We have also observed similar superconducting networks with and without small holes at the intersection. The small holes at the intersection do not work as a promoter for the diagonal flux penetration though the parallel flux penetration becomes weak. We discuss possible origins of these anomalous anisotropic flux penetrations.     

Thickness dependence of temperature coefficient of resistance of MnBi films

In-situ measurements of the temperature coefficient of resistance of electron-beam evaporated MnBi films are reported for the thickness range 30–180 nm. The thickness dependence of the temperature coefficient of resistance curves are plotted for different weight ratios, annealing times and substrate temperatures. The temperature coefficient of resistance shows marked size effect, and is negative for lower thicknesses (<100nm) and positive for higher thicknesses. The experimental data is in good agreement with the Mayadas-Shatzkes theory. The thickness dependence of the Curie temperature also indicates marked size effect.     

Thickness and density profiles of polyelectrolyte brushes: dependence on grafting density and salt concentration

We have performed neutron reflectivity measurements on a monolayer of charged diblock copolymers in a Langmuir trough, and determined precise density profiles of the polyelectrolyte brush at different densities. We obtain profiles in good agreement with existing self-consistent field computations, both for the osmotic and the salted brush regime. We show that the osmotic brush's thickness increases with density.     

Thickness dependence of the Josephson ground States of superconductor-ferromagnet-superconductor junctions

We report the first experimental observation of the two-node thickness dependence of the critical current in Josephson junctions with a ferromagnetic interlayer. Nodes of the critical current correspond to the transitions into the pi state and back into the conventional 0 state. From the experimental data the superconducting order parameter oscillation period and the pair decay length in the ferromagnet are extracted reliably. We develop a theoretical approach based on the Usadel equations taking into account the spin-flip scattering. Results of numerical calculations are in good agreement with experiments.     

Thickness dependence of optoelectrical properties of tungsten-doped indium oxide films

Pulsed laser deposition technique is used for deposition of tungsten-doped indium oxide films. The effect of film thickness on structural, optical and electrical properties was studied using X-ray diffraction (XRD), atomic force microscopy, UV-visible spectroscopy, and electrical measurements. X-ray diffraction study reveals that all the films are highly crystalline and oriented along (2 2 2) direction and the film crystallinity increases with increase in film thickness. Atomic force microscopy analysis shows that these films are very smooth with root mean square surface roughness of ∼1.0 nm. Bandgap energy of the films depends on thickness and varies from 3.71 eV to 3.94 eV. It is observed that resistivity of the films decreases with thickness, while mobility increases.