van der Waals gap-inserted light-emitting p–n heterojunction of ZnO nanorods/graphene/p-GaN film

We report on the electroluminescent (EL) and electrical characteristics of graphene-inserted ZnO nanorods (NRs)/p-GaN heterojunction diode. In a comparative study, ZnO NRs/p-GaN and ZnO NRs/graphene/p-GaN heterojunctions exhibit white and yellow EL emissions, respectively, at reverse bias (rb) voltages. The different EL colors are results of different dichromatic EL peak intensity ratios between 2.25 and 2.8 eV light emissions which are originated from ZnO and p-GaN sides, respectively. The 2.25 eV EL is predominant in both the heterojunctions, because of recombination by numerous electrons tunneled from p-GaN to ZnO across the thin barriers of the staggered broken gap with a large band offset in ZnO/p-GaN and the van der Waals (vdW) gap formed by graphene insertion at ZnO NRs/p-GaN. However, as for the 2.8 eV EL intensity, ZnO NRs/graphene/p-GaN hardly shows the EL emission, whereas ZnO NRs/p-GaN exhibits the substantially strong EL peak. We discuss that the significantly reduced 2.8 eV EL emission of ZnO NRs/graphene/p-GaN is a result of decreased depletion layer thickness at p-GaN side where the recombination events occur for 2.8 eV EL before the reverse bias-driven tunneling because the insertion of graphene (or vdW gap barrier) inhibits the carrier diffusion whose amount determines the depletion thickness when forming the heterojunctions. This study opens a way of suppressing (or enhancing) the specific EL wavelength for the dichromatic EL-emitting heterojunctions simply by inserting atom-thick vdW layer.     

Substrate-induced stress and transformation characteristics of a deposited Ti–Ni–Cu thin film

This article presents the investigation results on the transformation characteristics of a sputter-deposited Ti–Ni–Cu shape memory alloy thin film and its relation to the substrate-induced stress. Experimental results show that, with the substrate attachment, the transformation interval increases while the transformation hysteresis decreases in comparison with those of the same thin film in the free-standing condition. By assuming a stress distribution through the film thickness, a layer-by-layer transformation sequence in the substrate-attached film is proposed and the transformation interval and hysteresis are analysed. The analysis results show qualitative agreement with the experimental observations, suggesting that the approach taken is plausible. This approach may also be used to examine the transformation characteristics of other thin films having thermally induced phase transformations.     

Photovoltaic effects of p–n heterojunction device

Photoirradiation effects of poly(p-pyridyl vinylene), PPyV/poly(3-hexylthiophene), P3HT and polypyridine, PPy/poly(2-methoxy-5-dodecyloxy-p-phenylene vinylene), MDOPPV heterostructure photoelectric conversion devices have been investigated. The photovoltaic characteristics of the heterostructure photoelectric conversion device are considerably improved from those in a single-layer photoelectric conversion device. Quenching of photoluminescence both in the PPyV layer film and in the P3HT layer film has been observed in the PPyV/P3HT heterostructure film. The observed photoirradiation effects of the heterostructure device have been discussed in terms of interfacial photoinduced charge transfer between P3HT and PPyV.     

Improvement of Cu2ZnSnS4 thin film morphology using Cu–Zn–Sn–O precursor fabricated by sputtering

The new precursor of Cu–Zn–Sn–O (CZTO) was proposed for Cu₂ZnSnS₄ (CZTS) thin film fabrication to improve film morphology. The CZTS thin film grown from Cu–Zn–Sn (CZT) precursors has many bumps. We deposited CZTO precursors on Mo/soda-lime glass (SLG) substrates by RF sputtering using a CZT (Cu:Zn:Sn = 2:1:1) target in Ar and O₂ atmosphere at various O₂ partial pressures (0%, 5%, 17% and 20%). Subsequently, the CZTO precursors were sulfurized in Ar and S atmosphere to fabricate CZTS thin films. The CZTO precursors were amorphous. The morphology of the CZTS thin films was improved by the CZTO precursors. All of the CZTS films fabricated in this study had the same crystal structure. Composition analysis revealed that 50% of O were detected in the CZTO precursor, but O was not detected after sulfurizing process, indicating that O was substituted by S. The CZTS thin film from the CZTO precursor fabricated at O₂ partial pressure of 20% had similar composition for solar cell absorber.     

Possible two non-linear regions in the I–V characteristics of ZnO varistors

We report here structural and I–V characteristics of ZnO varistor with Fe₂O₃ nanoparticles additions (≤200 nm). It was found that the addition of Fe does not influence the wurtzite structure of ZnO ceramics, while the average grain size was affected. Interestingly, the nonlinear region was clearly observed in the I–V characteristics of the samples with Fe = 2.5%, 5% and 10%. Whereas, two nonlinear regions were only observed with further increase of Fe addition above 10% (30% and 50%). Although the values of non-linear coefficient are decreased by the additions of Fe, the breakdown field could be increased up to 7900 V/cm. Furthermore, the electrical conductivity was improved by increasing Fe up to 10%, followed by a decrease with further increase of Fe up to 50%. These results were discussed in terms of Fe₂O₃ nanosize grains which were formed and localized at the grain boundaries of ZnO ceramics.     

Electrical transport characteristics of ZnO–Bi2O3–B2O3 glasses

Optically clear glasses in the ZnO–Bi₂O₃–B₂O₃ (ZBBO) system were fabricated via the conventional melt-quenching technique. Dielectric constant and loss measurements carried out on ZBBO glasses unraveled nearly frequency (1 kHz–10 MHz)-independent dielectric characteristics associated with significantly low loss (D?=?0.004). However, weak temperature response was found with temperature coefficient of dielectric constant 18?±?4 ppm °C^?1 in the 35–250 °C temperature range. The conduction and relaxation phenomena were rationalized using universal AC conductivity power law and modulus formalism respectively. The activation energy for relaxation determined using imaginary parts of modulus peaks was 2.54 eV which was close to that of the DC conduction implying the involvement of similar energy barriers in both the processes. Stretched and power exponents were temperature dependent. The relaxation and conduction in these glasses were attributed to the hoping and migration of Bi³⁺ cations in their own and different local environment.     

Synthesis and characterization of p-GaSe thin films and the analyses of I–V and C–V measurements of p-GaSe/p-Si heterojunction under electron irradiation

Gallium Selenide (GaSe) thin films were grown by the electrochemical deposition (ECD) technique on Indium tin oxide (ITO) and p-Si (100) substrates. The Electron paramagnetic resonance (EPR) spectrum of GaSe thin films’ growth on ITO was recorded at room temperature. According to EPR results, the g value of an EPR signal obtained for GaSe deposited on ITO is 2.0012?±?0.0005. In/GaSe/p-Si heterojunction was irradiated with high-energy (6?MeV) and low-dose (1.53?×?10¹⁰?e^??cm^?2) electrons. The ideality factor of the In/GaSe/p-Si device was calculated as 1.24 and barrier height was determined as 0.82?eV from I–V measurements before irradiation. Acceptor concentration, built-in potential and barrier height of the In/GaSe/p-Si device were also obtained as 0.72?×?10^14?cm^?3, 0.65?eV and 0.97?eV from C–V measurements, respectively. After irradiation, the ideality factor n and barrier height Φ_b values of the In/GaSe/p-Si device were calculated as 1.55 and 0.781?eV, respectively. Acceptor concentration, the built-in potential and barrier height values of the In/GaSe/p-Si device have also shown a decrease after 6?MeV electron irradiation. This change in heterojunction device parameters shows that current transport does not obey thermionic emission, and thus tunneling could be active due to the defects formed by irradiation at the In–GaSe interface.     

Enhanced absorption process in the thin active region of GaAs based p–i–n structure

The optical absorption is the most important macroscopic process to characterize the microscopic optical transition in the semiconductor materials. Recently, great enhancement has been observed in the absorption of the active region within a p–n junction. In this paper, Ga As based p–i–n samples with the active region varied from 100 nm to 3 μm were fabricated and it was observed that the external quantum efficiencies are higher than the typical results, indicating a new mechanism beyond the established theories. We proposed a theoretical model about the abnormal optical absorption process in the active region within a strong electric field, which might provide new theories for the design of the solar cells,photodetectors, and other photoelectric devices.     

Preparation and photovoltaic property of a new hybrid nanocrystalline SnO2/Polypyrrole p–n heterojunction

Hybrid photovoltaic structures based on transparent conductive SnO₂ and electrically conductive polypyrrole (PPy) were prepared. Nanocrystalline SnO₂ is considered an n-type barrier and window layer on p-type PPy layer in cell structures. The surface morphology and thickness of the layers were studied using scanning electron microscopy. The optical absorbance data showed an increase of absorbance in contrast with PPy and SnO₂. There was a red shift in absorbance wavelengths and a decrease in band gaps for the prepared PV structures. To investigate the electrical properties of the obtained structures, current-voltage characteristic was measured. The best structure showed an open-circuit voltage of 0.170?V, a short-circuit current density of 0.017?mA/cm², a fill factor of 0.36 and power conversion efficiency of 0.076.     

Characteraction of Ag-doped ZnO thin film synthesized by sol–gel method and its using in thin film solar cells

Pure 2% and 4% Ag-doped ZnO thin films have been synthesized on glass substrates by sol–gel method. The structure, morphology and optical properties of the samples have been studied by X-ray diffractometer (XRD), scanning probe microscope, UV–vis spectrophotometer, respectively. The XRD result shows that the pure ZnO has a wurtzite hexagonal structure, no phase segregation is observed. The surface morphology of pure ZnO thin film shows that the grains are growing preferentially along the c-axis orientation perpendicular to the substrates. The transmittance spectra reveal that all samples have high transmittance above 90% in visible region. With Ag doping content increase, a red shift is observed. The performance of Ag-doped ZnO films using in thin film solar cells are simulated. The results show that 4% Ag-doped ZnO thin film can greatly improve the absorption of the cells. Compare to pure ZnO, solar cell's energy conversion efficiency improvement of 2.47% is obtained with 4% Ag doped ZnO thin film.     

Far IR transmission spectra of an YBa2Cu3O7−δ thin film

Abstract

The FIR transmission of an YBa₂Cu₃O_7-δ film 1000 Å thick deposited on an MgO plate has been studied from 20 cm^?1 to 4000 cm^?1 at T = 300 K, and at 120 K, 80 K and 7 K. i) The spectra for the normal state are well fitted if a mid-IR oscillator of high strength and high damping is added to the simplest Drude model. ii) The spectra for the superconductive state do not show significant variations of transmission vs. temperature for ω > 120 cm^?1, which should be in agreement with a weak BCS coupling 2Δ = 3.5 kT_c . iii) The FIR transmission at 7 K for ω = 20 cm^?1 is not zero (around 1%) and seems to confirm that the low-temperature perovskite is made of two phases: a superconducting, and a normal one, the proportion of the first one increasing when the film temperature is decreased.     

Current–voltage characteristics of PLD grown manganite based ZnO/La0.5Pr0.2Sr0.3MnO3/SrNb0.002Ti0.998O3 thin film heterostructure

We report the results of studies on the rectifying behavior and tunneling conduction in ZnO(n)/La_0.5Pr_0.2Sr_0.3MnO₃(LPSMO)(p)/SrNb_0.002Ti_0.998O₃ (SNTO)(n) thin film heterostructure comprising of two p–n junctions fabricated using the Pulsed Laser Deposition (PLD) technique. A structural study using XRD $?$-scan depicts the single-crystalline nature and confirms the phase purity while the transport studies using $I\text{–}V$ measurements at various temperatures and fields reveal the rectifying behavior. The temperature and field dependent variation in the saturation voltage $\left(V_C\right)$ indicates that, the heterostructure exhibits negative magnetoresistance (MR) at low temperatures and positive MR at room temperature (RT) which can be understood on the basis of the interface effect at the junction. $I\text{–}V$ curves obtained at all temperatures and fields show noticeable hysteresis during the positive voltage sweeping which has been attributed to the presence of the various conduction phenomena through the junctions in the presently studied heterostructure.     

Structural and optical properties of CuSe2 nanocrystals formed in thin solid Cu–Se film

This paper describes the structural and optical properties of Cu–Se thin films. The surface morphology of thin films was investigated by atomic force microscopy (AFM) and scanning electron microscopy (SEM). Formation of Cu–Se thin films is concluded to proceed unevenly, in the form of islands which later grew into agglomerates. The structural characterization of Cu–Se thin film was investigated using X-ray diffraction pattern (XRD). The presence of two-phase system is observed. One is the solid solution of Cu in Se and the other is low-pressure modification of CuSe₂. The Raman spectroscopy was used to identify and quantify the individual phases present in the Cu–Se films. Red shift and asymmetry of Raman mode characteristic for CuSe₂ enable us to estimate nanocrystal dimension. In the analysis of the far-infrared reflection spectra, numerical model for calculating the reflectivity coefficient of layered system, which includes film with nanocrystalite inclusions (modeled by Maxwell-Garnett approximation) and substrate, has been applied.     

Direct measurement of the interfacial barrier height of the manganite p–n heterojunction

A manganite p-n heterojunction composed of Lao.67Sro.33MnO3 film and 0.05 wt% Nb-doped SrTiO3 substrate is fabricated. Rectifying behavior of the junction well described by the Shockley equation is observed, and the transport properties of the interface are experimentally studied. A satisfactorily logarithmic linear dependence of resistance on temperature is observed in a temperature range of 150 K-380 K, and the linear relation between bias and activation energies deduced from the R - lIT curves is observed. According to activation energy, the interfacial barrier of the heterojunction is obtained, which is 0.91 eV.     

Depolarization of backscattered linearly polarized light from ZnO thin film

The depolarization behavior of backscattered linearly polarized light from ZnO thin film was investigated experimentally.The results show that the characteristics are related to both the polarization orientation and wavelength of linearly polarized incident light.When the incident light is s-polarized,the depo- larization behaviors are different for different wavelengths.When the incident light is p-polarized,the depolarization behaviors,on the contrary,are similar for different wavelengths.In addition,there is an optimal incident angle for depolarization of linearly polarized light with different wavelengths,which is equal to their effective Brewster angles,respectively.     

I–V characteristics of vanadium-flavonoid complexes based Schottky diodes

In this study, we have investigated the current–voltage characteristics of the Schottky diodes of two vanadium complexes, VO₂(3-fl) (1) (3-fl=3-hydroxyflavone) and VO(acac)₂ (2), (acac=acetylacetonate), and their composites with TiO₂. Thin films of vanadium complexes and their composites were deposited by the centrifugation method. Current–voltage characteristics of the samples were processed by the modified Shockley equation, Cheung functions and space-charge limited currents (SCLC) approaches. Different junction parameters, such as series resistances, reverse saturation currents, ideality factors and barrier height of the samples, were determined.