Influence of Ni addition on the process of phase formation in MgB2 bulk

Nickel is an important sheath material for the fabrication of MgB₂ wires. However, the effects of Ni doping on the phase formation and superconducting properties of MgB₂ remain controversial. In this work, Ni powder is selected for doping in MgB₂ bulk in order to examine the corresponding changes. Combining with the DSC analysis and in-situ XRD results, we find indications that the Ni powder reacted with Mg and B, forming MgNi_2.5B₂ at 600°C. The ternary compound began to decompose at a temperature above 800°C. The reactive phase, MgNi_2.5B₂, acted as an obstacle to the supercurrent flow, creating weak links among the MgB₂ grain boundaries. However, it is found that the added Ni formed a eutectic liquid phase with Mg at 506°C. The liquid phase helps the formation of MgB₂ at low temperature, which not only increases the density of the sample, but also improves the grain connectivity. Consequently, the presence of Ni in the MgB₂ sample is not necessarily a disadvantage; it depends on the desired application.     

Features of phase formation of Er2O3 films during electron-beam evaporation

Crystalline Er₂O₃ films on sapphire and silicon substrates have been prepared by electron beam evaporation technique in vacuum. Preparation of a single-phase erbium oxide film with a cubic lattice and preferred (400) orientation was achieved by means of growth rate decrease. Structural and optical properties of obtained films before and after short-time annealing were investigated. It is shown that the preparation of a single-phase erbium oxide film with a cubic lattice and preferred (222) orientation can be achieved by post-growth annealing of the films grown at usual rates.     

Effects of pre-carbonization treatment on the sintering process and Jc performance of sugar-doped MgB2 superconductors

The carbonization treatment was employed to the sugar-coated B powders before it mixed with Mg powders. It is found that the pre-carbonization treatment could effectively suppress the formation of MgO and Mg₂C₃ impurity in the sugar-doped samples and thus result in an improved J_c at low fields in the sugar-doped samples. Besides, the sintering process of sugar-doped samples was also investigated combined with the thermal analysis and it is found that the sugar addition could obviously lower the onset temperature of the solid–solid reaction between Mg and B.     

Ionized impurity scattering in degenerate In2O3

Thin films of In₂O₃ are prepared by the spraying method. The concentration of charge carriers is changed from about 8×10¹⁹ cm^?3 to 5×10²⁰ cm^?3 by suitable doping with Sn. The optical effective mass is found to depend slightly on carrier concentration. Electrical and optical measurements indicate that electrons are scattered predominantly by charged impurity centres. Structural investigations show that grain boundary scattering can be neglected. The interpretation of the experimental results is mainly based on a paper by von Baltz and Escher, where analytical formulas for the imaginary part of the complex dielectric constant are given for the most important scattering mechanisms in (degenerate) semiconductors.     

Isotope effect in hydrogen peroxide formation during H2O and D2O sonication

The kinetics of hydrogen peroxide formation have been studied during H2O and D2O sonication in the presence of argon and oxygen (f = 22 kHz, I = 3.0 W cm-2, Pac = 0.52 W ml-1, V = 20 ml, T = 20 degrees C). It was found that the sonochemical reaction rate W has a zero order with respect to hydrogen peroxide (H2O, D2O or DHO2) concentration. In argon atmosphere the kinetic isotope effect was found to be equal to alpha = WH2O/WD2O = 2.2 +/- 0.3. The alpha value decreases in H2O-D2O mixtures with increasing H2O concentration. In oxygen atmosphere the isotope effect is not observed (alpha = 1.05 +/- 0.10). It is assumed that the revealed isotope effect is related to the mechanism of water sonolysis including the H2O-Ar* and D2O-Ar* energy transition, where Ar* is an argon atom in an excited state, in nonequilibrium plasma generated by the shock-wave.     

超导体MgB2成相过程研究

根据镁和硼的基本化学性质、杂化轨道理论、前线轨道理论和粉末反应理论,分析了粉末反应中MgB<,2>晶核的形成及生长过程.这一过程可分三步完成:(1)两种粉粒碰撞接触,做反相微幅受追振动,产生MgB<,2>成相区;(2)两个硼原子相遇,价轨道经sp<'2>杂化生成B<,2>,镁原子的两个3s价电子自旋相反成对填入B<,2...     

On phase diagrams and on cBN formation in the system BN-Ca3B2N4

Abstract

The phase diagrams of Ca₃B₂N₄ and of the system BN-Ca₃B₂N₄ has been studied by high pressure differential thermal analysis Ca₃B₂N₄ has 3 structural phases and melts at higher temperature. The system BN-Ca₃B₂N₄ formes an eutectic melt and cBN is synthesized by nucleation and crystal growth.     

原位法MgB_2-B_4C复相超导体合成及相含量调控研究

以B4C和Mg为原料合成的MgB2-B4C复相超导体具有高的临界电流密度(Jc)和高的超导转变温度(Tc),是一种有潜力的实用MgB2超导材料,其成相机理对复相MgB2超导体的相含量调控和磁通钉扎研究具有重要意义。结合经典烧结理论,研究了B4C-Mg真空固相烧结制备MgB2-B4C复相超导体的超导相形成和晶粒生长过程,给出了B4C-Mg的金斯特林格扩散模型和MgB2晶粒生长过程。通过选择B4C原料粒径,MgB2-B4C复相超导体超导相体积相含量在18%-88%范围可控。相含量88%的MgB2-B4C复相超导体临界转变温度达33.5K,转变宽度1.5K。10 K环境6T外场下电流密度可以达到1×104A/cm2,表明MgB2-B4C复相超导体具有良好的磁通钉扎行为。     

激光辐照对MgB2超导体电子结构的影响

研究了光辐照对MgB2超导体电子结构的影响。对MgB2超导体进行不同时间的激光照射后,利用正电子湮没技术对光照样品进行了研究,根据正电子寿命谱参数的变化情况,对光辐照后MgB2超导体样品中缺陷及电子结构的变化进行了讨论。实验表明:MgB2超导体中的平均电子浓度对激光的照射十分敏感,并随光照时间的增加而增加。     

Electronic excitations of Sc3+ impurity in α-Al2O3 crystals

Optical properties, including luminescence, of scandium-doped α-Al₂O₃ crystals have been studied in the VUV range. An absorption band associated with the scandium impurity was observed at the fundamental-absorption edge of crystalline corundum. A strong luminescence band peaking at 5.6 eV, which is most effectively excited within the 7.7–8.8-eV interval, was found. The kinetic and polarization characteristics of this luminescence were studied within the temperature range 6–500 K. An excitation model of the impurity complex and the mechanism of its relaxation are discussed. Fiz. Tverd. Tela (St. Petersburg) 40, 653–654 (April 1998)     

Subsolidus phase relation in the Bi2O3-Fe203-La2O3 system

Bismuth-containing semiconductor material is a hot topic in photocatalysts because of its effective absorption under the visible light. In this paper, we expect to explore a new bismuth-based photocatalyst by studying the subsolidus phase relations of the Bi2O3-Fe2O3-La2O3 system. The X-ray diffraction data shows that in this ternary system the ternary compound does not exist, while seven binary compounds （including one solid solution series Bi1-xLaxO1.5 with 0.167 〈 x 〈 0.339） are obtained and eight compatibility triangles are determined.     

对含Y_2O_3和Gd_2O_3的La_2O_3-B_2O_3-BaO玻璃化学稳定性研究

本文研究了含Ｙ２Ｏ３和Ｇｄ２Ｏ３的Ｌａ２Ｏ３－Ｂ２Ｏ３－ＢａＯ玻璃的耐水性和耐酸性。结果表明，比硅酸盐玻璃化学稳定性差的Ｌａ２Ｏ３－Ｂ２Ｏ３－ＢａＯ玻璃，可以适量的用Ｙ２Ｏ３和Ｇｄ２Ｏ３取代Ｌａ２Ｏ３，可得以改善     

The effect of SiC nanoparticle addition on the flux pinning properties of MgB2

The nanoparticle–MgB₂ composite superconducting sample, (SiC)_4wt.%(MgB₂)_96wt.% ((SiC)₄–MgB₂), was prepared, and the effect of nanoparticle additions on the magnetic flux pinning was investigated. The measurement and comparison of isothermal magnetization M(H), for pure-MgB₂ powder and sintered pellets of (SiC)₄–MgB₂ and pure-MgB₂ were carried out at temperatures between 5 and 50 K in fields up to 8.5 T. The magnetic irreversibility ΔM(H) curves of the (SiC)₄–MgB₂ follow almost identical lines of both pure-MgB₂ powder and sintered bulk MgB₂ in the region above a specific magnetic field (called a merged field), which gradually decreases as the temperature increases. The (SiC)₄–MgB₂ composite superconductor has exhibited the flux pinning effect which comes from both the grain boundaries and the point defect weak pinning centers in the region below the merged field line. This is different from the case of pure-MgB₂ powder and sintered bulk MgB₂ which showed mostly the grain boundaries pinning.     

Enhanced piezoelectric properties and lowered sintering temperature of Ba(Zr0.07Ti0.93)O3 by B2O3 addition

The effects of B₂O₃ doping on densification, ferroelectric, and piezoelectric properties of Ba(Zr_0.07Ti_0.93)O₃(BZT) ceramics were investigated. The addition of B₂O₃ to the ceramics lowered the sintering temperature by ∼200 °C as well as changed their microstructures. Higher B₂O₃ concentration caused a decrease in remanent polarization and coercive field, while the piezoelectric coefficient d₃₃ remained at a high value of 291 pC/N for the ceramic sample with 2 wt.% B₂O₃. The relationship between piezoelectric properties and ferroelectric constant was examined.     

The statistics of nearest neighbor impurity pair formation in semiconductors2

The equilibrium concentrations of doubly ionized, singly ionized and neutral, nearest neighbor pairs of donor-donor and acceptor-acceptor type of impurity pairs have been studied at the temperature of diffusion. In the calculations, the discrete nature of the host lattice and, the internal energies of the pairs have been taken into account. Further, the effect of degeneracy on pair formations was investigated at high levels of doping densities.     

关于MgB2/Al2O3超导薄膜电阻转变和各向异性的研究

利用电子束蒸发方法将MgB2超导薄膜沉积到Al2O3(001)衬底上.采用标准的四引线法研究了磁场平行和垂直超导薄膜ab平面下的电阻转变.一个激活能模型 U(T,H)= U0(1-T/(Tc+δ))n (1-H/Hc2(0))m被建立用来分析超导薄膜磁通线的激活能和电阻转变,结果表明该模型能够在整个转变温度范围描述超导体磁通线的激活能和电阻转变.另外,利用多项式Hc2(t)=Hc2(0)+At+Bt2分析了MgB2/Al2O3超导薄膜的上临界磁场,获得了该超导薄膜的各向异性参数γ=Hc2ab(0)/Hc2c(0)= 2.26.     

烧结过程中Ni-Al金属间化合物形成的内耗

Ni-Al金属间化合物是一类重要的高温结构材料,在多种领域具有明确的目标需求.粉末冶金技术是制备Ni-Al金属间化合物的一种重要选择.探索烧结过程中Ni-Al金属间化合物形成和转变过程,明确固相扩散反应发生温度和金属间化合物种类对调控烧结工艺和优化产品质量至关重要.本文采用内耗技术系统研究了Ni-Al粉末混合物压坯烧结...     

The effect of supports (Al2O3, Al2O3-CeO2 and Al2O3-CeZrO2) on the nature of gold-species in supported gold catalysts

This work is concerned with the study of Au specimens produced by gold deposition on nanosized mixed oxides (alumina, ceria, zirconia) prepared by the sol-gel method using organometallic precursors. According to X-ray absorption near edge structure, extended X-ray absorption fine structure, transmission electron microscopy data, and ultraviolet-visible and X-ray photoelectron spectroscopy measurements, mixed Al-Ce-Zr oxides are quite effective for stabilization of different gold specimens. The samples pre- treated in hydrogen at 150°C are characterized by the presence of gold Au³⁺ cations located on the surface in slightly disordered octahedral oxygen coordination. Metallic gold nanoparticles with a size of about 2 nm and gold clusters were found in the samples treated in hydrogen at 300°C.     

An anomalous enhancement in the electrical conductivity of Li2O : B2O3 : Al2O3 glasses

The study of electrical conductivity of 27.5 Li₂O : (72.5 − x) B₂O₃ : x Al₂O₃ glass samples has been carried out. It has been observed that the conductivity exhibits Arrhenius behavior for all samples up to glass transition temperature T_g. Beyond T_g, an anomalous enhancement followed by decrease in conductivity has been observed. The results have been explained by dividing the temperature range into two regions. In region-I, it has been observed that the conductivity variation exhibits a maximum at 2.5 mol% Al₂O₃, which has been explained on the basis of Mixed Glass Former Effect (MGFE). An anomalous enhancement in the conductivity observed in region-II has been attributed to the nucleation in the glass. The subsequent decrease in the conductivity has been attributed to the crystallization of the glass samples.