Rapid roughening in thin film growth of an organic semiconductor (diindenoperylene)

The scaling exponents alpha, beta, and 1/z in thin films of the organic molecule diindenoperylene deposited on SiO2 under UHV conditions are determined. Atomic-force microscopy, x-ray reflectivity, and diffuse x-ray scattering were employed. The surface width displays power law scaling over more than 2 orders of magnitude in film thickness. We obtained alpha = 0.684+/-0.06, beta = 0.748+/-0.05, and 1/zeta = 0.92+/-0.20. The derived exponents point to an unusually rapid growth of vertical roughness and lateral correlations. We suggest that they could be related to lateral inhomogeneities arising from the formation of grain boundaries between tilt domains in the early stages of growth.     

Impedance studies of Sb doped SnO2 thin film prepared by sol gel process

Antimony-doped tin oxide thin films have a range of technological applications as conductive coatings, and sol-gel processing seems to offer some advantages over other coating techniques. In this study antimony-doped tin oxide (ATO) thin films have been prepared by the sol-gel dip-coating (SGDC) process, using tin (II) chloride dehydrate (SnCl₂, 2H₂O) and antimony (III) chloride (SbCl₃) as host and dopant precursors respectively. The structure of the (ATO) powders was analysed by X-ray diffraction (XRD) and the microstructure of the thin films by atomic force microscopy (AFM). These investigations show that the structure is tetragonal rutile type and that an increase in Sb-doping decreases the crystallite size of the (ATO) particles. To analyze the impedance spectroscopy data, the Nyquist (Z″ vs. Z′) plots as well as the representation of imaginary (Z″) and real (Z′) parts of impedance vs. frequency were used. The Nyquist plots suggest that only the grain boundaries are responsible in the conduction mechanism of the material. From the variation of lnσ vs. inverse of absolute T we have deduced the activation energy found to be 0.87 eV.     

Mobility of electrons and holes in an n-type organic semiconductor perylene diimide thin film

N,N′-diphenylbutyl-3,4,9,10-perylenebiscarboximide (PTCDI-C4Ph) were characterized by optical and electrochemical methods. A device with an ITO/PTCDI-C4Ph (≈2 μm)/Al structure was fabricated to measure mobility by time-of-flight techniques. This vacuum deposited organic layer was an amorphous state. Electrons were observed faster than holes. The electron and hole mobilities were 1.8 × 10⁻⁴ cm²/V s and 1.1 × 10⁻⁴ cm²/V s under the electric field of 500 (V/cm)^1/2, respectively. This result shows that this organic compound is a good candidate for an n-type conduction.     

Structural and spectroscopic studies of thin film of silver nanoparticles

We report the deposition of thin film of silver (Ag) nanoparticles by wet chemical method. The as-synthesized Ag nanoparticles have been characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), X-ray energy dispersive spectroscopy (EDS), field emission transmission electron microscopy (FETEM) and high-resolution TEM (HRTEM), UV-vis spectroscopy and thermogravimetric-differential thermal analysis (TG-DTA) respectively. FESEM image indicates that the silver film prepared on the quartz substrate is smooth and dense. XRD pattern reveals the face-centered cubic (fcc) structure of silver nanoparticles. EDS spectrum indicates that samples are nearly stoichiometric. From TEM analysis, it is found that the size of high purity Ag nanoparticles is ranging from 10 to 20 nm with slight agglomeration. Absorption in UV-vis region by these nanoparticles is characterized by the features reported in the literature, namely, a possible Plasmon peak at ∼403 nm. Optical absorbance spectra analysis reveals that the Ag film has an indirect band structure with bandgap energy 3.88 eV. TGA/DTA studies revealed that a considerable weight loss occurs between 175 and 275 °C; and the reaction is exothermic.     

Investigation of electrical properties (ac and dc) of organic zinc phthalocyanine,ZnPc, semiconductor thin films

We report measurements on the electrical properties of thermally evaporated zinc phthalocyanine, ZnPc, semiconductor thin films. Aluminum and gold metal electrodes were used and both proved to act as ohmic contacts. A relative permittivity, ε_r, of 1.56 was estimated from the dependence of capacitance on film thickness. The room temperature current density–voltage measurements indicated an ohmic conduction at low voltages, while a space–charge-limited conduction at higher voltages. An average value of a thermally generated hole concentration of the order 10¹³ m⁻³ was estimated at room temperature.The ac conductivity, capacitance and loss tangent were measured over a wide range of temperature (from 170 to 430 K) and frequency (between 0.1 and 20 kHz). The ac conductivity of ZnPc films was observed to be proportional to ω^s, where ω is the angular frequency, and the index s is a temperature and frequency-dependent constant. At low temperatures and for higher frequencies the ac conduction was due to hopping. The capacitance, as well as the loss tangent, was found to be dependent on both temperature and frequency, but was constant for all frequencies at low temperatures. Such dependences were accounted for the equivalent-circuit model consisting of inherent capacitance in parallel with a temperature dependent resistive element.     

Raman polarization studies of highly oriented organic thin films

In this work we report on the capability of polarized Raman spectroscopy to investigate the structure of thin organic films. Diindenoperylene (DIP) thin films on (1 × 1)‐rutile(110) were prepared via organic molecular beam deposition (OMBD). Raman spectra of DIP thin films showed several strong Raman modes in the wavenumber region from 1200 to 1650 cm⁻¹. The A_g mode at 1284 cm⁻¹ shows two contributions, thereby indicating the coexistence of at least two DIP film structures. Polarized Raman spectroscopy was applied to characterize the molecular orientation and the dominance of the σ‐configuration (i.e. upright standing DIP molecules) was found. Copyright © 2009 John Wiley & Sons, Ltd.     

Plasmon resonance modulated photoluminescence and Raman spectroscopy of diindenoperylene organic semiconductor thin film

In a comparison between a bare diindenoperylene (DIP) film and a DIP film spin-coated with a layer of gold nanoparticles, we have investigated the influence of plasmon resonances in the gold particles on spectroscopic properties of the molecular film. Under off-resonant excitation with a laser at 633 nm, the bare DIP film showed only weak photoluminescence (PL) and Raman signals, but after spin-coating gold nanoparticles on such a DIP film, we found an enhancement of both the PL and Raman signals by a factor of about 3, whereas no enhancement could be observed when the same sample was excited with laser light of 488 nm. This difference reveals that at 633 nm, plasmon resonances in the gold nanoparticles are excited, leading in turn to an enhancement of PL and Raman signals of the weakly absorbing DIP film via coupling between plasmons in the gold particles and exciton-polaritons in the molecular film. For the laser at 488 nm, due to a much larger absorption coefficient of DIP, excitons in the molecular film are directly excited, out-weighing the influence of an off-resonant coupling to the plasmon resonances in the gold particles occurring at much lower energy.     

Superresolution optical disk with a thermoreversible organic thin film

Recording and retrieving small marks far beyond the optical diffraction limit in a high-speed rotating phase-change optical disk have been investigated by use of a thermoreversible organic thin film as a superresolution mask layer. The organic thin film exhibited significant thermoreversibility and rapid response on laser irradiation. Recorded marks as small as 120 nm in length could be detected by a dynamic disk tester with a laser wavelength of 635 nm and a numerical aperture of 0.6.     

Reflection and absorption of light by a thin semiconductor film

Optics and Spectroscopy - Reflection and absorption of light by a thin semiconductor film are investigated using the local field method taking into account local field inhomogeneities. The...     

A white-lighting LED system with a highly efficient thin luminous film

In this work, a highly effective white light-emitting diode (LED) system is realized by a combination of an LED and a photonic crystal (PC-) structured luminous film. The emission intensity of the PC-structured luminous film emission is enhanced by a factor of ca. 10.6 compared with that of the planar film. The light from the system can give rise to an intense white emission with CIE coordinates (0.33, 0.38). The total emission intensity is over twice greater than that of the usual LED system. Additionally, the emission of the PC-structured films can be switched flexibly. The strategy proposes an efficient and facile method for high excitation and extraction of the luminous film, and it shows great potential for a bright white lighting with excellent colour matching.     

Tuning the optical transmission through a homogeneous doped semiconductor film by applying an external magnetic field

We theoretically and numerically studied the transmission of light through a homogeneous doped semiconductor film with a Drude tensor in the presence of an external magnetic field. The magneto-induced homogeneous metal films are found to exhibit a magneto-induced light transparency due to cyclotron resonance. In particular, the surface plasmon (SP) resonance mode of the magneto-induced metal film move to higher frequencies with increasing magnetic field, bringing about large changes in the extraordinary light transmission peaks predicted to occur in such a magneto-induced semiconductor film.     

Cells anchored upon a thin organic film with different nano-mechanical properties

By applying dynamic contact module and particular measurement of phase angles, harmonic contact stiffness (S) along with the measured displacement (D) of different self-assembled monolayers (SAMs) adsorbed on Au can be distinguished. The relatively ordered and hydrophobic ODT and DDT molecules adsorbed on Au form high contact stiffness, which are presumably unfavorable substrates for a cell to adhere upon. Short-chain MUA molecules adsorbed on Au provides a hydrophilic characteristic with a relatively low contact stiffness, which may significantly promote cell adhesion. It is, therefore, estimated that the behavior of a cell adhered on SAMs/Au is correlated not only with their outermost chemical species but also with a proper dS/dD matrix acting as a cushion.     

Alternating current characterization of nano-Pt(Ⅱ)octaethylporphyrin(PtOEP) thin film as a new organic semiconductor

Alternating current(AC) conductivity and dielectric properties of thermally evaporated Au/Pt OEP/Au thin films are investigated each as a function of temperature(303 K–473 K) and frequency(50 Hz–5 MHz).The frequency dependence of AC conductivity follows the Jonscher universal dynamic law.The AC-activation energies are determined at different frequencies.It is found that the correlated barrier hopping(CBH) model is the dominant conduction mechanism.The variation of the frequency exponent s with temperature is analyzed in terms of the CBH model.Coulombic barrier height Wm,hopping distance Rω,and the density of localized states N(EF) are valued at different frequencies.Dielectric constant ε_1(ω,T) and dielectric loss ε_2(ω,T) are discussed in terms of the dielectric polarization process.The dielectric modulus shows the non-Debye relaxation in the material.The extracted relaxation time by using the imaginary part of modulus(M')is found to follow the Arrhenius law.     

Electrochemical impedance spectroscopic studies on aging-dependent electrochemical degradation of p-toluene sulfonic acid-doped polypyrrole thin film

The conducting polymer polypyrrole thin film was galvanostatically polymerized on stainless steel substrate for the supercapacitor electrode. The electrochemical stability of the electrode was monitored each 30 days of aging up to 90 days. The FTIR analysis showed an increase in intensity of the absorption peaks, especially high growth of the carbonyl peaks after 90 days of aging. The electrochemical capacitance degradation of the electrode was studied using cyclic voltammetric and galvanostatic charge/discharge analysis in 1 M Na₂SO₄ electrolyte, which showed ~?53% of fading in the initial specific capacitance value after 90 days. Further, the electrochemical degradation of polypyrrole electrodes was analyzed in detail using electrochemical impedance spectroscopy. The analysis showed a large increase in the internal resistance and low-power deliverability of the electrode with respect to aging as the main reasons for the degradation of specific capacitance of the polypyrrole electrode.     

Tandem organic light-emitting diode with a molybdenum tri-oxide thin film interconnector layer

A 10-nm-thick molybdenum tri-oxide(MoO3) thin film was used as the interconnector layer in tandem organic lightemitting devices(OLEDs).The tandem OLEDs with two identical emissive units consisting of N,N-bis(naphthalen-1-yl)N,N-bis(phenyl)-benzidine(NPB) /tris(8-hydroxyquinoline) aluminum(Alq3) exhibited current efficiency-current density characteristics superior to the conventional single-unit devices.At 20 mA/cm2,the current efficiency of the tandem OLEDs using the interconnector layers of MoO3 thin film was about 4.0 cd/A,which is about twice that of the corresponding conventional single-unit device(1.8cd/A).The tandem OLED showed a higher power efficiency than the conventional single-unit device for luminance over 1200cd/m2.The experimental results demonstrated that a MoO3 thin film with a proper thickness can be used as an effective interconnector layer in tandem OLEDs.Such an interconnector layer can be easily fabricated by simple thermal evaporation,greatly simplifying the device processing and fabrication processes required by previously reported interconnector layers.A possible explanation was proposed for the carrier generation of the MoO3 interconnector layer.     

Energy transfer in a thin film of TPD fluorescent molecules doped with PtOEP and Ir(ppy)3 phosphorescent molecules

A thin film of triphenylamine dimer, N,N′-bis(3-methylphenyl)-N,N′-bis(phenyl)-benzidine (TPD), doped with fac tris(2-phenylpyridine) iridium (Ir(ppy)₃) and platinum octaethyl porphine (PtOEP) is characterized by photoluminescence emission measurements at several excitation wavelengths and photoluminescence excitation measurements at relevant emission wavelengths in the temperature range from 10 K to room temperature. The investigated film is a phosphorescent OLED material with singlet absorbing host (TPD) and triplet emitting guests [Ir(ppy)₃ and PtOEP]. At short wavelength excitation simultaneous triple band emission from singlet TPD, triplet Ir(ppy)₃ and TPD, and from triplet PtOEP is observed. Förster-type singlet-singlet state energy transfer from TPD to Ir(ppy)₃ and PtOEP, intra-component intersystem crossing, and Dexter-type triplet-triplet energy transfer between the substituents are studied.