The Effect of Attenuation Induced by Sand and Dust Storms on Ka-Band Electromagnetic Wave Propagation Along Earth-Space Paths

Attenuation of millimeter waves induced by sand and dust storms along horizontal paths is analyzed and its expressions applied to earth-space paths is presented. Graphs of the specific attenuation and attenuation versus height and visibility are gotten for two kinds of particle size distribution, namely exponential, lognormal. Results obtained are briefly discussed.     

An efficient Schottky-varactor frequency multiplier at millimeter waves. Part I: Doubler

The efficiency of millimeter wave doublers with a wide tunable bandwidth was studied. The efficiency depends on the varactor parameters and the embedding impedances seen by the diode at fundamental and harmonic frequencies. Millimeter wave doublers were simulated with a nonlinear analysis program to find optimum embedding impedances for a given diode. Also the sensitivity of the efficiency to various diode and circuit parameters was evaluated. A scaled model was constructed in order to experimentally optimize the impedances. For experimental verification a doubler from 40–58 GHz to 80–116 GHz was constructed. The highest efficiency measured was 45% at 94 GHz with 5 mW input power. The highest efficiency obtained with 20 mW input power was 38%.     

A GaAs planar Schottky varactor diode for left-handed nonlinear transmission line applications

The left-handed nonlinear transmission line(LH-NLTL) based on monolithic microwave integrated circuit(MMIC) technology possesses significant advantages such as wide frequency band,high operating frequency,high conversion efficiency,and applications in millimeter and submillimeter wave frequency multiplier.The planar Schottky varactor diode(PSVD) is a major limitation to the performance of the LH-NLTL frequency multiplier as a nonlinear component.The design and the fabrication of the diode for such an application are presented.An accurate large-signal model of the diode is proposed.A 16 GHz-39.6 GHz LH-NLTL frequency doubler using our large-signal model is reported for the first time.The measured maximum output powers of the 2nd harmonic are up to 8 dBm at 26.4 GHz,and above 0 dBm from 16 GHz to 39.6 GHz when the input power is 20 dBm.The application of the LH-NLTL frequency doubler furthermore validates the accuracy of the large-signal model of the PSVD.     

Preliminary Design of a Ka-Band Second Harmonic Gyroklystron Amplifier

The preliminary design of a Ka-band, second harmonic, three cavities gyroklystron amplifier is presented. The beam-wave interaction in the second harmonic gyroklystron amplifier is studied by using a particle-in-cell code, and the validity of the design of the microwave circuit is also discussed. The results show that this gyroklystron can produce an output peak power of over 200kW with 20dB gain and 20% maximum efficiency at 35GHz.     

300 MHz核磁共振频率源的研制

介绍了基于Analog Device公司AD9954设计的数字化频率源,可以实现宽带高频（5 MHz~125 MHz、280 MHz~301 MHz）、高稳定度（1×10^-9）、低相位噪声（301 MHz,≤-127 dBc/Hz@250 kHz offset）频率输出以及频率、相位和幅度的高速切换. 该数字化频率源可应用于300 MHz核磁共振谱仪和磁共振成像仪,可部分取代昂贵的进口频率源. 本文最后给出核磁实验结果.     

基于导模共振效应的宽带宽透射型滤波器的设计与优化

基于导模共振理论,设计了一种工作中心波长位于632.8 nm的宽带宽透射型滤波器.根据瑞利异常理论公式,计算得到瑞利波长所在的光谱位置,从而证明异常现象对滤波器的带宽产生了拓宽作用.为了优化宽带宽滤波器的结构参数,利用严格耦合波理论通过计算不同参数条件下的光谱,分析了结构参数和材料对于透射光谱在带宽和峰值效率方面的影响,选取其中最佳的结构参数数值和材料,得到峰值效率为90％、带宽为95 nm的透射光谱.该宽带宽透射型导模共振器件在显示和成像领域有潜在的应用价值.     

毫米波速调管电子光学系统的研究

电子光学系统是毫米波速调管长寿命和整管性能实现的关键,毫米波速调管零件尺寸较小,为了在Ka波段和W波段实现千瓦量级的输出功率,要求具有高的电子注通过率及低的阴极负荷。对Ka波段和W波段电子光学系统特性进行了分析,确定了Ka波段10 kW分布作用速调管和W波段1 kW分布作用速调管电子光学系统的设计方案,利用软件对电子枪和聚焦系统的结构进行计算,并采用CST仿真软件对设计的电子枪发射的电子注在聚焦磁场中的状态进行优化。设计出的Ka波段速调管电子光学系统,电子枪工作电压26 kV,发射电流2 A,互作用区长度30 mm,磁场强度大于0.6 T,流通达到100%。设计的W波段速调管电子光学系统,电子枪工作电压17 kV,电流0.65 A,互作用区长度20 mm,磁场大于0.9 T,流通达到100%。已制成Ka波段速调管和W波段速调管,设计的电子光学系统能够满足速调管工程化需求。     

Ka波段分布作用速调管降压收集极设计

为满足无线传能系统对高效率大功率毫米波功率源的迫切需求,开展大功率连续波速调管高效率技术研究,采用降压收集极技术实现速调管在效率上的有效提升。主要介绍了某Ka波段大功率连续波分布作用速调管（EIK）降压收集极的设计方案,包括注-波互作用后废电子能量分布及行为特性的研究,收集极初始条件、结构及电极电压的设计,给出了单级降压收集极和两级降压收集极的设计和计算结果。三维粒子模拟（PIC）计算结果表明,该Ka波段连续波EIK采用单级降压收集极时回收效率为41.0%,采用两级降压收集极时回收效率为68.8%,EIK总管效率相比于未采用降压收集极技术时的27.5%上升至54.8%,表明通过降压收集极技术可有效提升毫米波大功率速调管工作效率。     

S波段高精度快速倒相开关设计

倒相开关是能量倍增器法（SLED）脉冲压缩系统中的关键器件,它的倒相精度和开关速度对脉冲压缩系统的性能有重要影响。设计了一种工作在S波段的精度可调、响应迅速的微带反射式倒相开关,并对其进行了理论分析,电路结构设计和仿真研究。对倒相开关的反射终端进行了改进设计,利用一个变容二极管来代替传统的并联枝节电路,通过调节变容二极管的偏置电压改变反射终端的反射系数,从而实现对倒相相位的精确调节。仿真结果表明,倒相开关响应时间约4 ns,且通过调节变容二极管偏置电压可以在一定范围内调节倒相精度。

     

Design of W-Band Tripler

This paper describes a high performance W-band tripler with a novel structure. Input frequency is 25-36.7 GHz, output frequency 75-110 GHz, input power is 20dBm and conversion loss 16 dB. It can extend microwave signal to W-band (adding in Ka-band doubler). In the design, we give some approaches to achieve high band performances.     

Construction of Ka-Band Preselected Harmonic Mixer

In this paper, a new method to realize pre-selected harmonic mixer is introduced. It includes a harmonic mixer, and a YIG turning filter (YTF) design. A digital driver is used for YTF, which can realize linearization modification and temperature compensation. The spectrum analyzer's out scanning voltage is given an A/D conversion and interface to digital driver.     

High frequency doubling efficiency THz GaAs Schottky barrier diode based on inverted trapezoidal epitaxial cross-section structure

A high-performance terahertz Schottky barrier diode (SBD) with an inverted trapezoidal epitaxial cross-sectional structure featuring high varactor characteristics and reverse breakdown characteristics is reported in this paper. Inductively coupled plasma dry etching and dissolution wet etching are used to define the profile of the epitaxial layer, by which the voltage-dependent variation trend of the thickness of the metal-semiconductor contact depletion layer is modified. The simulation of the inverted trapezoidal epitaxial cross-section SBD is also conducted to explain the physical mechanism of the electric field and space charge region area. Compared with the normal structure, the grading coefficient M increases from 0.47 to 0.52, and the capacitance modulation ratio (C_max/C_min) increases from 6.70 to 7.61. The inverted trapezoidal epitaxial cross-section structure is a promising approach to improve the variable-capacity ratio by eliminating the accumulation of charge at the Schottky electrode edge. A 190 GHz frequency doubler based on the inverted trapezoidal epitaxial cross-section SBD also shows a doubling efficiency of 35% compared to that 30% of a normal SBD.     

大功率限幅器的研制

介绍了一种L波段大功率限幅器的研制情况,该限幅器具有体积小、插入损耗小、输入承受功率高及限幅输出电平低等特点。文中给出了限幅二极管在高/低输入信号电平时的等效电路以及同轴滤波器的设计分析过程。实验测试结果表明,限幅器完全达到技术指标要求。     

Measurements of Building Construction Materials at Ka-Band

Millimeter waves is expected to be used for indoor broadband wireless access for its rich frequency spectrum resources. To implement the indoor MMW wireless system, it is important to know its propagation characteristics in building, which are governed by the transmission properties of construction materials. This paper focuses on the measurements of reflection characteristics and refractive indices of some interior construction materials (such as glass, brick, plasterboard, silencing board, etc.) at Ka–band. The free–space reflection method was used to measure the reflection and transmission coefficients. Then the complex refractive indices of various materials could be calculated by using the Fresnel's formula.     

Response of tunnel schottky-barrier junctions to radiation pressure of fir laser radiation

The response of tunnel Schottky junctions due to plasma reflection of laser radiation has been investigated in the far infrared. The signal was found to be independent of the laser radiation frequency below the plasma edge. At high power levels a nonlinearity of the response was observed. It is assumed that this nonlinearity is caused by near-zone field effects which lead also to a substantial enhancement of the responsivity.On leave from A. F. Ioffe Physico-Technical Institute of the Russian Academy of Sciences St. Petersburg 194021, Russia     

Fabrications and characterizations of high performance 1.2 kV,3.3 kV,and 5.0 kV class 4H–SiC power SBDs

In this paper, 1.2 kV, 3.3 kV, and 5.0 kV class 4H–SiC power Schottky barrier diodes(SBDs)are fabricated with three N-type drift layer thickness values of 10 μm, 30 μm, and 50 μm, respectively. The avalanche breakdown capabilities,static and transient characteristics of the fabricated devices are measured in detail and compared with the theoretical predictions. It is found that the experimental results match well with the theoretical calculation results and are very close to the 4H–SiC theoretical limit line. The best achieved breakdown voltages(BVs) of the diodes on the 10 μm, 30 μm, and 50 μm epilayers are 1400 V, 3320 V, and 5200 V, respectively. Differential specific-on resistances(R_(on-sp)) are 2.1 m?·cm~2,7.34m?·cm~2, and 30.3 m?·cm~2, respectively.     

利用谐振倍频产生纠缠光束

根据Anderson等近期的理论研究,简要介绍了Ⅱ类相位匹配倍频过程产生纠缠光的理论计算过程,得出了纠缠的类型、纠缠度与抽运功率的函数关系和纠缠度的理论值。利用Ⅱ类非临界相位匹配的KTP晶体作为倍频晶体,采用倍频腔结构为半整块的单端驻波腔(由于腔的入射光与反射光重合,无法直接取出纠缠光束,需要先将腔内的纠缠光束当作一对压缩的耦合模取出,再在50/50光学分束器上干涉恢复一对纠缠的本征模),在基频光波长获得了具有正交振幅负关联、正交相位正关联特征的量子纠缠光束对,它们的正交振幅和噪声低于散粒噪声基准0.2±0.1 dB,正交相位差噪声低于散粒噪声基准1±0.2 dB。最后分析了两个正交分量的纠缠度不平衡的原因。与目前常用的光学参变振荡器相比,此类纠缠产生源的装置具有便捷和结构简单的优点。     

激光二极管高效铜微通道冷却器设计

通过对铜微通道冷却器的散热分析,设计出５层结构的模块式铜微通道冷却器。采用常规的线切割工艺加工,散热通道宽大约200μm,深300μm,各层间用真空钎焊的方法组装。该冷却器对于腔长06mm、宽10mm的线阵激光二极管芯片热阻为0.58℃/W。通过面阵激光二极管封装实验证明,该冷却器可用于10％占空比工作的面阵激光二极管封装。     

激光二极管高效铜微通道冷却器设计

 通过对铜微通道冷却器的散热分析，设计出５层结构的模块式铜微通道冷却器。采用常规的线切割工艺加工，散热通道宽大约200μm，深300μm，各层间用真空钎焊的方法组装。该冷却器对于腔长06mm、宽10mm的线阵激光二极管芯片热阻为0.58℃/W。通过面阵激光二极管封装实验证明，该冷却器可用于10％占空比工作的面阵激光二极管封装。     

激光二极管抽运非平面单向行波环形腔单频固体激光器的设计

激光二极管抽运的单块非平面环形腔固体激光器具有结构稳固、效率高等优点 ,在一定的纵向磁场作用下 ,可形成单向行波振荡 ,纵向抽运时就可得到较高功率的单频输出 ,有广泛的应用前景。文中在详细讨论了非平面单向行波环形腔形成单频的原理基础上 ,研究了国际上流行的“三角形”单块非平面环形腔 ,并用此种腔型得到 2 70 m W的基横模单纵模 1.0 6μm激光 ;同时提出了所设计的非平面环形腔“梯形环形腔”和“角锥棱镜式环形腔”。由于它们工作原理相近 ,统称它们为“泛三角形非平面单向行波环形腔”。