共查询到20条相似文献,搜索用时 109 毫秒
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本文对Ge/An,Ge/Ag,双层膜和Ge-An,Ge-Ag合金膜的退火过程进行了透射电子显微镜观测,对Ge/多晶Au(或Ag)还进行了加热过程的原位观测。观测表明,多晶Au和单晶Au膜的存在使非晶Ge的晶化温度Tc的下降显著不同,可由晶界三叉点等处为非晶Ge的有利形核位置来解释,双层膜的缩聚区中由于局域优先晶化的影响,不仅Tc(=100℃)比非缩聚区中(Tc=150℃)低,而且形成直径为1—2μm的Ge大晶粒,而Ge/多晶Ag和Ge/单晶Ag膜的Tc均约为280℃,合金膜中金属含量较低时(CAu<17at%,CAg<18at%),Tc高于相应的Ge/多晶Au(Ag)膜;金属含量较高时,Tc低于Ge/多晶Au(Ag)膜。这说明过饱和金属原子的存在使得非晶Ge的晶化势垒大大降低。
关键词: 相似文献
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制备了[(Fe/Pt/Fe)/Ag]n多层膜,研究了不同温度退火后的微结构和磁特性.实验结果表明温度高于400℃退火后,样品开始形成L10相的FePt纳米颗粒与Ag基体的复合结构.△M曲线的测量表明FePt颗粒之间不存在交换作用,非常清楚地说明非磁基体Ag有效地隔离了FePt磁性颗粒.有序相的低温合成可能和多层膜结构所造成的界面扩散以及Ag层引入的界面缺陷有关,同时,Ag原子较强的迁移性以及FePt与Ag之间表面自由能的显著差异,使FePt纳米颗粒被Ag隔离. 相似文献
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制备了[(Fe/Pt/Fe)/Ag]n多层膜,研究了不同温度退火后的微结构和磁特性.实验结果表明温度高于400℃退火后,样品开始形成L10相的FePt纳米颗粒与Ag基体的复合结构.ΔM曲线的测量表明FePt颗粒之间不存在交换作用,非常清楚地说明非磁基体Ag有效地隔离了FePt磁性颗粒.有序相的低温合成可能和多层膜结构所造成的界面扩散以及Ag层引入的界面缺陷有关,同时,Ag原子较强的迁移性以及FePt与Ag之间表面自由能的显著差异,使FePt纳米颗粒被Ag隔离.
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L10相
FePt
交换作用 相似文献
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Ag/InP Schottky结是制作TE场助光电阴极的关键,本文利用Auger分析技术,详细地研究了热处理对Ag/InPSchottky结界面特性的影响。实验结果表明高温长时间热处理会导致严重界面相互扩散,同时使Schottky结的势垒高度降低,理想因子增大,泡利负电性理论很好地解释了扩散效应。势垒高度的降低及理想因子的增大也是由界面互扩散造成的,这种扩散导致界面特性由Schotthy特性向欧姆性质转化。为防止界面互扩散及Schottky结特性的退化,可选用负电性小的金属制作Schottky结,并在工艺上尽量减少热处理的温度和时间。 相似文献
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研究了Ag的厚度、退火时间、沉积温度对于Ni/Ag/Ti/Au电极的反射率及与p-GaN欧姆接触性能的影响. 利用分光光度计测量反射率, 采用圆形传输线模型计算比接触电阻率. 结果表明: 随着Ag厚度的增加, Ni/Ag/Ti/Au电极的反射率逐渐增大; 在氧气氛围中, 随着退火时间从1 min增至10 min, 300 ℃退火时, 比接触电阻率持续下降, 而对于400-600 ℃退火, 比接触电阻率先减小后增大; 在300和400 ℃氧气中进行1-10 min 的退火后, Ni/Ag/Ti/Au的反射率变化较小, 退火温度高于400 ℃时, 随着退火时间的增加, 反射率急剧下降; 在400 ℃氧气中3 min退火后, 比接触电阻率可以达到3.6×10-3 Ω·cm2. 此外, 适当提高沉积温度可以增加Ni/Ag/Ti/Au的反射率并降低比接触电阻率, 沉积温度为120 ℃条件下的Ni/Ag/Ti/Au电极在450 nm处反射率达到90.1%, 比接触电阻率为6.4×10-3 Ω·cm2. 综合考虑电学和光学性能, 在沉积温度为120 ℃下蒸镀Ni/Ag/Ti/Au (1/200/100/100 nm)并在400 ℃氧气中进行3 min退火可以得到较优化的电极. 利用此电极制作的垂直结构发光二极管在350 mA电流下的工作电压为2.95 V, 输出光功率为387.1 mW, 电光转换效率达到37.5%. 相似文献
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研究了不同Ni厚度的Ni/Ag/Ti/Au电极在不同退火温度和退火气氛下与p-GaN之间的欧姆接触性能以及电极的光反射率的变化.采用矩形传输线模型对各电极的比接触电阻率进行测算,利用分光光度计对电极在不同波长下的反射率进行测量.结果表明,Ni金属层的厚度越小,电极的光反射率越高,而Ni层厚度对比接触电阻率的影响较小;当退火温度高于400℃后,电极的光反射率降低,在氧气氛围中退火后光反射率比在氮气中退火后下降更加明显.但在氧气氛围中退火有利于减小比接触电阻率.综合考虑接触电阻和光反射率,电极Ni(1 nm)/Ag/Ti/Au在400℃氧气中快速退火后得到了较好的结果,其比接触电阻率为5.5×10-3Ω·cm2,在450 nm处反射率为85%.利用此电极制作了垂直结构发光二极管(LED)器件,LED在350 mA注入电流下,工作电压为3.2 V,发光功率为270 mW,电光转换效率达到24%. 相似文献
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Ultrathin Mo (5 nm)/MoN (5 nm) bilayer nanostructure has been studied as a diffusion barrier for Cu metallization. The Mo/MoN bilayer was prepared by magnetron sputtering and the thermal stability of this barrier is investigated after annealing the Cu/barrier/Si film stack at different temperatures in vacuum for 10 min. The failure of barrier structure is indicated by the abrupt increase in sheet resistance and the formation of Cu3Si phase proved by X-ray diffraction (XRD) and energy-dispersive X-ray spectroscopy (EDS). High resolution transmission electron microscopy (HRTEM) examination suggested that the ultrathin Mo/MoN barrier is stable and can prevent the diffusion of Cu at least up to 600 °C. 相似文献
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Ternary Ti-Si-N refractory barrier films of 15 nm thick was prepared by low frequency, high density, inductively coupled plasma implantation of N into TixSiy substrate. This leads to the formation of Ti-N and Si-N compounds in the ternary film. Diffusion of copper in the barrier layer after annealing treatment at various temperatures was investigated using time-of-flight secondary ion mass spectrometer (ToF-SIMS) depth profiling, X-ray diffractometer (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray (EDX) and sheet resistance measurement. The current study found that barrier failure did not occur until 650 °C annealing for 30 min. The failure occurs by the diffusion of copper into the Ti-Si-N film to form Cu-Ti and Cu-N compounds. FESEM surface morphology and EDX show that copper compounds were formed on the ridge areas of the Ti-Si-N film. The sheet resistance verifies the diffusion of Cu into the Ti-Si-N film; there is a sudden drop in the resistance with Cu compound formation. This finding provides a simple and effective method of monitoring Cu diffusion in TiN-based diffusion barriers. 相似文献
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A combination of sheet resistance, stripping and Hall effect measurements have been made on phosphorus layers implanted into silicon at 40 and 100 keV with doses between 1 × 1015 and 5 × 1016 atoms/cm2. The implants were made at room temperature and 450°C. After annealing at 650°C, the profile of electrically active phosphorus following a high dose room temperature implant, was found to be flat topped with a concentration of approximately 5 × 1020/cm3. Very little diffusion occurred when annealing to 850°C where the free electron concentration increased to approximately 1.5 × 1021/cm3. Highly doped channeled tails were found when implanting at 450°C along the 〈110〉 direction and damage was being continuously annealed out preventing the formation of an amorphous phase. The rapid diffusion of the profile into the bulk found when annealing between 650°C and 850°C was speculated to be due to the presence of a dense dislocation entanglement in these layers following a hot implant. 相似文献
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The possibility of the formation of a dense array of size-uniform Ge clusters on the Si(111) surface in the presence of the
Bi surfactant has been demonstrated using scanning tunneling microscopy. It has been shown that the deposition of germanium
at room temperature leads to the formation of two types of clusters. Clusters containing two to four atoms are one monolayer
thick and are mobile on the Bi layer. The second type, bilayer clusters, containing eight to ten atoms, transform into epitaxial
islands after annealing at 400–500°C. Models of possible atomic structures of bilayer clusters have been considered taking
into account their positions relative to Bi trimers. It has been found that the probability of the substitution of Si atoms
for Ge atoms during cluster formation does not exceed 20%. 相似文献
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Takahiro Hiramatsu Mamoru FurutaTokiyoshi Matsuda Chaoyang LiTakashi Hirao 《Applied Surface Science》2011,257(13):5480-5483
Behavior of oxygen in sputtering deposited ZnO films through thermal annealing and its effect on sheet resistance of the films were investigated. The crystallinities of the ZnO film were improved by post-deposition annealing in vacuum. However, the sheet resistance of ZnO film was dramatically decreased after post-deposition annealing in vacuum at more than 300 °C, while O2 desorbed from the film. The oxygen vacancies which acted as donors were formed by the thermal annealing in vacuum. The sheet resistance of the films was recovered by annealing in oxygen ambient. In this paper, 18O2 gas as an oxygen isotope was used as the annealing ambient in order to distinguish from 16O, which was constituent atom of the ZnO films. SIMS analysis revealed that 18O diffused into the ZnO film from the top surface by 18O2 annealing. Therefore oxygen vacancies formed by the post-deposition annealing in vacuum could be compensated by the annealing in oxygen ambient. 相似文献
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B.T. Liu L. YangX.H. Li K.M. WangZ. Guo J.H. ChenM. Li D.Y. ZhaoQ.X. Zhao X.Y. Zhang 《Applied Surface Science》2011,257(7):2920-2922
5-nm-thick amorphous Ni-Ti films deposited on Si by magnetron sputtering, annealed at various temperatures in high vacuum, have been studied as diffusion barriers for Cu interconnection using X-ray diffraction, atomic force microscopy and four-probe methods. Although no Cu silicide peaks are found from X-ray diffraction patterns of the samples annealed up to 750 °C, it is found that the sheet resistance of Cu/Ni-Ti/Si decreases with the increase of annealing temperature and then slightly increases when the annealing temperature is higher than 700 °C. Root mean square roughness of Cu/Ni-Ti/Si increases with the increase of annealing temperature and many island-like grains present on the surface of the 750 °C annealed sample, which is ascribed to dewetting and agglomeration. 相似文献