Erbium in silicon–germanium quantum wells

Strained Si_1−xGe_x/Si quantum wells have been doped with erbium by implantation. A comparison is made with strained Si_1−xGe_x/Si quantum wells and relaxed Si_1−xGe_x, with x between 10% and 25%, doped with erbium during MBE growth. The erbium concentration was between 1×10¹⁸ and 5×10¹⁸ cm⁻³ throughout the active regions. Transmission electron microscopy, X-ray diffraction, and photoluminescence studies indicate that good regrowth can been achieved after full amorphisation by implantation of the strained quantum wells. The erbium luminescence is more intense in the Si_1−xGe_x/Si layers, but erbium-implanted samples containing Si_1−xGe_x exhibit defect luminescence in the region of 0.9–1.0 eV. These defects are also present when Si_1−xGe_x/Si quantum wells are implanted with an amorphising dose of silicon, and then regrown. They are attributed to small germanium-rich platelets, rather than to erbium-related defects. Electroluminescence is presented from a forward biased erbium-implanted Si_0.87Ge_0.13/Si structure at a drive current density of only 1.8 mA/cm².     

Luminescence from Si-Si1−xGex/Si1−yCy-Si structures

Near band edge photoluminescence has been obtained from Si_1−yC_y quantum well (QW) and neighboring Si_1−xGe_x/Si_1−yC_y double QW (DQW) structures. Enhanced no-phonon recombination is observed from the DQW structures and it is attributed to a breaking of the k-selection rule in the presence of the heterointerface. The luminescence persists for measurement temperatures up to 30–50 K and the intensity exhibits a quenching behavior with an activation energy equal to 8–20 meV. In electroluminescence only recombination in the Si_1−xGe_x layer has been observed from neighboring Si_1−xGe_x and Si_1−yC_y DQW structures.     

Photoluminescence and X-ray characterisation of Si/Si1−xGex multiple quantum wells

We present an experimental approach to correlate optical and structural properties of Si/Si_1−xGe_x multiple quantum wells as determined by photoluminescence (PL) and X-ray diffraction, respectively. The optical properties of the quantum wells were characterised by studying the dependence of luminescence on temperature and excitation density. An enhanced PL yield and an increased quenching temperature were observed for a sample grown at 650°C as compared to one grown at 600°C. Pronounced interdiffusion across the multiple quantum well interfaces as well as significant lattice distortions within the SiGe layers have been observed.     

Scattering-controlled recombination of Δ2-light-hole indirect excitons and apparently enhanced quantum confined Stark effect in tensilely strained Si1−yCy/Si (0 0 1) quantum wells

Anomalies are found in the near-band-edge luminescence properties of Δ₂-light-hole indirect excitons in Si_1−yC_y-based tensilely strained quantum wells (QWs). The experimental spectra exhibit a clear signature of phonon-assisted transitions on the lower energy side of the “no-phonon” transition, which indicates the relevance of “virtual” indirect valleys and in-plane k-dispersion, as opposed to the theoretical prediction that the zone-centered Δ₂ valleys take over the conduction band edge. Intervalley scattering between [0 0 1]-Δ₂ valleys and in-plane Δ₄ valleys is suggested as the underlying mechanism. On the other hand, the experimental evidence was found for “apparently enhanced” quantum-confined Stark red shifts for Si_1−yC_y-based QWs. However, quantitative estimates are in conflict with the experimental results and predict a blue shift due to exciton weakening which masks the Stark effect as in the case of Δ₄-heavy hole excitons in Si_1−xGe_x-based QWs.     

Study of superconducting state parameters of alkali–alkali binary alloys by a pseudopotential

A detailed study of the superconducting state parameters (SSP) viz. electron–phonon coupling strength λ, Coulomb pseudopotential μ^*, transition temperature T_C, isotope effect exponent and effective interaction strength N_OV of ten alkali–alkali binary alloys i.e. Li_1−xNa_x, Li_1−xK_x, Li_1−xRb_x, Li_1−xCs_x, Na_1−xK_x, Na_1−xRb_x, Na_1−xCs_x, K_1−xRb_x, K_1−xCs_x and Rb_1−xCs_x are made within the framework of the model potential formalism and employing the pseudo-alloy-atom (PAA) model for the first time. We use the Ashcroft’s empty core (EMC) model potential for evaluating the superconducting properties of alkali alloys. Five different forms of local field correction functions viz. Hartree (H), Taylor (T), Ichimaru–Utsumi (IU), Farid et al. (F) and Sarkar et al. (S) are used to incorporate the exchange and correlation effects. A considerable influence of various exchange and correlation functions on λ and μ^* is found from the present study. Reasonable agreement with the theoretical values of the SSP of pure components is found (corresponding to the concentration x = 0 or 1). It is also concluded that nature of the SSP strongly depends on the value of the atomic volume Ω₀ of alkali–alkali binary alloys.     

Effect of Cu doping in MgB2 superconductor at various processing temperatures

The effects of Cu doping in MgB₂ superconductor has been studied at different processing temperatures. The polycrystalline samples of Mg_1−xCu_xB₂ with x = 0.05 were synthesized through the in-situ solid sate reaction method in argon atmosphere at different temperature range between 800–900 °C. The samples were characterized through X-ray diffraction (XRD), Scanning Electron Microscopy (SEM) and low temperature R–T measurement techniques for the phase verification, microstructure and superconducting transition temperature, respectively. The XRD patterns of Mg_1−xCu_xB₂ (x = 0.05) do not exhibit any impurity traces of MgB₄ or MgB₆ and they show the sharp transition in the samples prepared at 850 °C. The onset transition temperature of the prepared samples is around 39 K, which is almost the same as that for the pure MgB₂. This indicates that Cu doping in MgB₂ does not affect the transition temperature. The SEM micrograph of Mg_0.95Cu_0.05B₂ has shown that the sample is dense with grain size smaller than 1 μm.     

Quantitative measurements of Ge surface segregation during SiGe alloy growth

Ge segregation during the growth of Si_{1 − x}Ge_x alloys (x = 5, 10, 20, and 40%) was studied using X-ray photoelectron spectroscopy. The alloys were grown in thicknesses up to 20.0 nm at 500°C to measure quantitatively the amount of segregated surface Ge. The length of alloy needed to reach steady-state growth edge was found to decrease with increasing alloy concentration (4.8, 2.8, 2.4, and 2.0 nm, respectively). It was found that each alloy had a complete monolayer of Ge on the surface and an increasing amount of segregated Ge in the second layer (20, 55, 80, and 95%, respectively) during steady-state growth. An increase in the temperature of alloy growth (400–750°C) resulted in an increase in the leading edge of alloy growth but did not change the amount of segregated Ge during steady-state growth. We propose that film stress is responsible for the amount of Ge segregation.     

Structural and compositional analysis of InBixAsySb(1−x−y) films grown on GaAs(0 0 1) substrates by liquid phase epitaxy

The growth of epitaxial InBi_xAs_ySb_(1−x−y) layers on highly lattice mis-matched semi-insulating GaAs substrates has been successfully achieved via the traditional liquid phase epitaxy. Orientation and single crystalline nature of the film have been confirmed by X-ray diffraction. Scanning electron micrograph shows abrupt interface at micrometer resolution. Surface composition of Bi(x) and As(y) in the InBi_xAs_ySb_(1−x−y) film was measured using energy dispersive X-ray analysis and found to be 2.5 and 10.5 at.%, respectively, and was further confirmed with X-ray photoelectron spectroscopy. Variation of the composition with depth of the film was studied by removing the layers with low current (20 μA) Ar⁺ etching. It was observed that with successive Ar⁺ etching, In/Sb ratio remained the same, while the As/Sb and Bi/Sb ratios changed slightly with etching time. However after about 5 min etching the As/Sb and Bi/Sb ratios reached constant values. The room temperature band gap of InBi_0.025As_0.105Sb_0.870 was found to be in the range of 0.113–0.120 eV. The measured values of mobility and carrier density at room temperature are 3.1×10⁴ cm² V⁻¹ s⁻¹ and 8.07×10¹⁶ cm⁻³, respectively.     

The solubility of phosphorus in GaN

IIIV_xN_1−x ternary alloys are promising materials for their applications in light-emitting devices in the range of wavelength from ultra violet to the infrared ray due to the large bowing of band gap energy. In this paper, molecular dynamical method was used to calculate the solubility of phosphorus in GaN by using the Gibbs free energy and the dielectric theory. The calculation results show that the content of P in GaN varies with the growth temperature, which may be larger than 25% in the N-rich GaP_xN_1−x or less than 90% in the P-rich GaP_xN_1−x, at the growth temperature of about 1500 K. We compared our theoretical results with those reported in references. By using light-radiation heating together with low-pressure metal-organic chemical vapor deposition, and ion implantation techniques, we have successfully synthesized N-rich (x < 0.17) and P-rich GaP_xN_1−x (x > 0.90) compounds.     

Magnetic and electromagnetic properties of RuZn and RuCo substituted BaFe12O19

Polycrystalline samples of M-type hexaferrites BaFe_12−2xRu_xZn_xO₁₉ and BaFe_12−2xRu_xCo_xO₁₉ with 0x0.45 have been prepared by a classical sintering method. The evolutions with x of the cell parameters, the saturation magnetization and the magnetic transition temperature have been measured; in this range of small doping ratios, saturation magnetization and Curie temperature of substituted hexaferrites remain close to those of the undoped BaFe₁₂O₁₉. X-ray diffraction measurements on oriented powders show that a change of magnetocrystalline anisotropy from axial to planar occurs in both cases for a small substituting ratio x_c=0.375. Microwave electromagnetic characteristics have been studied on the ceramic samples from 0.1 to 10 GHz. The behaviour of the magnetic losses (μ″) corroborates the anisotropy change when doping; a convolution of the dissipation mechanisms (domain wall motions and gyromagnetism) is obtained for x_c. The level of the magnetic losses is discussed in relation with others substituted Ba-hexaferrites.     

Magnetic properties of Sm–Co–B-based nanocomposite magnets

The magnetic properties of nanocomposite melt-spun magnets with composition Sm_16−xCo_68+xB₁₆ (x=0–10, 2 at% interval) and Sm₈Co_92−yB_y (y=10–18, 2 at% interval) have been studied systematically. Several ribbons were fabricated with a wheel speed of 50 m/s, followed by annealing in the temperature range of 700–800°C for 2.5–40 min. XRD results and magnetization versus temperature curves showed that almost all of the samples were composed of the tetragonal Sm₂Co₁₄B and rhombohedral SmCo₁₂B₆ phases which are not magnetically hard at room temperature. However, a relatively high coercivity in the range of 3.5–5.5 kOe has been obtained in these samples. The highest coercivity of 5.5 kOe and a very promising β value of −0.28%/°C were obtained in Sm₈Co₇₄B₁₈ ribbons annealed at 750°C for 5 min. The high coercivities are attributed to the small grain size of the 2 : 14 : 1 phase, in which the large surface areas enhance its effective anisotropy, and make it uniaxial type.     

Scintillation properties of the Yb-doped YAlO3 crystals

Yb³⁺-doped YAlO₃ single crystals were grown by the Czochralski method with a radio frequency heating system. The starting melt compositions of Y_1−xYb_xAlO₃ were varied as x=0.02, 0.1, 0.2, 0.3 and 0.45. Photo- and thermo-luminescence characteristics including emission decays were measured within 4–300 K. Very fast charge transfer luminescence of Yb³⁺ was found, with the typical double peak spectrum at 345 and 525 nm. At room temperature the photoluminescence and scintillation decay curves show a leading subnanosecond decay component without any additional slower processes. The high density of Yb-rich YAlO₃ makes this material a promising candidate for fast scintillators.     

Disruption of antiferromagnetic order in Zn-doped La2CuO4

The magnetic phase diagram of La₂(Cu_1−xZn_x)O₄ has been determined from zero-field muon-spin-rotation (ZF-μSR) data taken at LAMPF for 0 ≤ x ≤ 0.10. Antiferromagnetic onset temperatures follow T_N(x) from susceptibility measurements on the same samples. However, the order becomes long range, as evidenced by a well-defined internal magnetic field, only at temperatures well below T_N. Extrapolation of our results yields T_N → 0 K at x = 0.11 for a single (Cu_1−xZn_x)O₂ plane, and comparison with YBa₂(Cu_1−xZn_x)₃O₆ implies identical disruption of magnetism by Zn doping in the single- and double-plane systems.     

On the theory of internal photoemission in heterojunctions

The theory of internal photoemission in semiconductor heterojunctions has been reviewed and the existing model has been extended by incorporating the effects of the difference in the effective masses in the active region and the substrate, nonspherical-nonparabolic bands, and the energy loss per collisions. This complete model has been applied to describe the experimental results obtained from Si_1−xGe_x/Si heterojunction infrared photodetectors. The barrier heights (correspondingly the cut-off wavelengths) of SiGe/Si samples have been determined from their internal photoemission spectra by using the extended model which has the wavelength and doping concentration dependent free carrier absorption parameters. Fowler analysis showed that the model is in good agreement with the experiments for the entire spectrum.     

Nax/2Bi1−x/2MoxV1−xO4 and Bi1−x/3MoxV1−xO4 New Scheelite-related phases

New Scheelite-related solid solutions of the compositions Na_x/2Bi_1−x/2Mo_xV_1−xO₄ (0≤x≤1) and Bi_1−x/3 Mo_xV_1−xO₄(0≤x≤0.2) have been synthesised by the substitution of Na and Mo at the A and B sites respectively of the ABO₄ type ferroelastic BiVO₄. The phases were characterised using chemical analysis, powder X-ray diffraction, scanning electron microscopy, EDAX, and Raman spectroscopy. While almost a continuous solid solution is obtained for the series Na_x/2Bi_1−x/2Mo_xV_1−xO₄, the absence of Na at the A-site results only in a narrow stability region for the other series, Bi_1−x/3 Mo_xV_1−xO₄ where 0≤x≤0.2. Raman spectra of selected samples at room temperature also suggest that vanadium and molybdenum atoms are disordered at the tetrahedral sites.     

Optical properties of InGaN/GaN double quantum wells with varying well thickness

The optical properties and recombination kinetics of the InGaN/GaN double quantum well (DQW) structures with different well thickness (L_w) have been studied by means of photoluminescence (PL), time-resolved PL, and cathodoluminescence (CL) measurements. With increasing quantum well thickness up to 4 nm, the PL emission energy decreases and the blueshift of the PL emission energy increases with increasing excitation density. On the other hand, the PL emission energy of the DQWs with L_w=16 nm is higher than that of the DQWs with L_w=4 nm, and is independent of the excitation density. With increasing L_w from 1 to 4 nm, the PL decay times increase. In contrast, the decay times of 16 nm DQWs are faster than those of 4 nm DQWs. These different results for 16 nm DQWs such as the blueshift of the emission energy, the decrease of the excitation density dependence, and the increase of recombination rate can be ascribed to the relaxation of the piezoelectric field. We also observed the inhomegeneity in the CL spectra of the DQWs with L_w=1 nm on 1 μm scale.     

Study on the superconducting composite material formation in the system Bi2Sr2CaCu2O8+x/Al-containing phases

Phase evolution in the Bi---Sr---Ca---Cu---Al---O system was studied. Two Al-containing phases BiSr_1.5Ca_0.5Al₂O_z and (Sr_1−xCa_x)₃Al₂O₆ (x = 0.4 − 0.45) were determined to be chemically compatible with Bi_2.18Sr₂CaCu₂O_8+x (Bi-2212) at temperatures of the samples processing. The phase equilibria in the title system were investigated above the solidus temperature. The BiSr_1.5Ca_0.5Al₂O_z was found to be in equilibrium only with the melt and the (Sr_1−xCa_x)₃Al₂O₆ phase. This latter aluminate equilibrated with Ca,Sr cuprates, CaO, the Cu-free phase, and the liquid. The melting and solidification in Bi-2212, doped with the aluminate, corresponded to the reversible reaction Bi-2212 + BiSr_1.5Ca_0.5Al₂O_z ↔ (Sr_1−xCa_x)₃Al₂O₆ + liquid. Two sets of superconducting composite materials with initial compositions Bi-2212 + nBiSr_1.5Ca_0.5Al₂O_z and Bi-2212 + m(Sr_1−xCa_x)₃Al₂O₆ were prepared by solidification from the partial melt. The former material was composed mostly of large Bi-2212 lamellas separated by the BiSr_1.5Ca_0.5Al₂O_z phase, which destroyed superconducting links between Bi-2212 grains. The latter material consisted of a Bi-2212 polycrystalline matrix with high concentration of small (ca. 3 μm) grains of (Sr_1−xCa_x)₃Al₂O₆ imbedded in Bi-2212 lamellas. The Bi-2212 + m(Sr_1−xCa_x)₃Al₂O₆ materials displayed a trend to enhance flux pinning at T = 60 K with the increase of aluminate phase content.     

Higher-order elastic constants of La1.84Sr0.16CuO4 high-temperature superconductor

Finite deformation theory is used to obtain the strain energy density of a tetragonal 2–1–4-type single crystal of the high-temperature superconductor La_2−xSr_xCuO₄. The complete set of second and third-order elastic constants of the high-temperature superconductor La_2−xSr_xCuO₄ (x = 0.16) is calculated by taking into account the interactions between nine nearest-neighbour atoms in the lattice and using Mie–Grüneisen interatomic potential. For the sake of comparison we have also computed the values of these constants for x = 0.13–0.20. The values of third-order elastic constants of La_2−xSr_xCuO₄ (x = 0.13–0.20) are negative and their absolute magnitudes are one order higher than those of the second-order elastic constants.     

Defect structure of quenched γ-BICOVOX by combined X-ray and neutron powder diffraction

A detailed investigation of the defect structure of the Co doped BIMEVOX solid electrolyte, Bi₂V_{1 − x}Co_xO_{5.5 − 3x/2} (x = 0.1 and x = 0.2), quenched from high temperature, has been carried out using X-ray and neutron powder diffraction data measured at room temperature. The structure is built up from alternating layers of [Bi₂O₂]_n²ⁿ⁺ and [V_{1 − x}Co_xO_{3.5 − 3x/2}]_n²ⁿ⁻ with disorder limited to the vanadate layer. The ideal V/Co co-ordination is octahedral with corner sharing of equatorial oxygens. The refinements show that the true structure is distorted, with disorder in both apical and equatorial oxygens and oxygen vacancies concentrated in the equatorial positions. Detailed analysis of the oxygen site occupancies reveals two main types of V/Co co-ordination viz. distorted octahedral and distorted tetrahedral. The majority of the sites in both compositions are tetrahedral.     

Positive linear magnetoresistance in Fex–C1−x composites

A large positive magnetoresistance (MR) has been found in micro-sized Fe_x–C_1−x composites. At a magnetic field of 5 T, the Fe_0.2–C_0.8 composite has the largest MR, 53.8% and 190% at room temperature and at 5 K, respectively. The magnetic field dependence of the MR can be described approximately as MR∝Bⁿ, and the value of exponent n is determined by the Fe weight concentration and temperature, ranging from 1/4 to 6/4. It appears that Fe_x–C_1−x has a linear field dependence of the positive MR at different temperatures. The possible mechanism for the positive MR is discussed.