MEH-PPV与TiO2共混体系太阳电池性能分析

以MEH-PPV(poly(2-methoxy-5-(2′-ethylhexoxy)-1,4-phenylene vinylene)为电子给体材料(Donor,D), TiO₂纳米线为电子受体材料(Acceptor,A),制成了共混体系太阳电池. 从D/A材料共混体系的紫外可见吸收光谱(UV-vis)、光荧光谱(PL)、器件的电荷传输的光导J-V图等方面,分析了MEH-PPV∶TiO₂体系器件性能变化的原因. 得出了当在纯MEH-PP 关键词： 太阳电池 聚合物 性能     

MEH-PPV与TiO2共混体系太阳电池性能分析

以MEH-PPV(poly(2-methoxy-5-(2'-ethylhexoxy)-1,4-phenylene vinylene)为电子给体材料(Donor,D),TiO2纳米线为电子受体材料(Aceeptor,A),制成了共混体系太阳电池.从D/A材料共混体系的紫外可见吸收光谱(UV-vis)、光荧光谱(PL)、器件的电荷传输的光导J-V图等方面,分析了MEH-PPV:TiO2体系器件性能变化的原因.得出了当在纯MEH-PPV中掺入TiO2纳米线时,共混体系的太阳电池性能大幅度增加,当D/A比例为1:3时,其太阳电池在AM1.5光照下,其开路电压Voc为0.7 V,短路电流密度Jsc为0.3 mA/cm2填充因子FF为30.5%,能量转换效率n为0.091%.其能量转换效率比纯MEH-PPV作为活性层器件提高近60倍.发现当共混体系用苯硫酚溶剂回流时,其器件性能又提高了近一倍.     

ITO/有机半导体/金属结构OLED器件的数值模拟

基于稳态的小信号漂移扩散方程,建立了有电极的单层有机电致发光(OLED)器件的数值模型,编制的MATLAB程序,首先模拟了文献中的OLED器件电极附近正电荷层(面电荷)对器件J-V的影响,得到了和文献中一致的结果. 模拟了ITO/PPV/Ca结构的OLED器件,模拟时,考虑了OLED阳极附近存在正体电荷,得到的J-V曲线和文献中的实验结果一致,体电荷产生了势垒,影响了电流曲线. 关键词： 有机电致发光 数值模拟 漂移扩散模型     

电极表面改性对染料敏化太阳电池性能影响的机理研究

采用强度调制光电流谱(IMPS)和强度调制光电压谱(IMVS)技术,从染料敏化太阳电池(DSC)电子传输和复合角度对比了不同光强下导电玻璃表面阻挡层及TiO₂薄膜优化使电池性能改善的内在原因.阻挡层的引入和TiO₂薄膜的优化均通过电沉积法实现.结果表明,对多孔薄膜电极的不同改性均提高了电池的短路电流J_sc和效率η,但对电子传输和复合过程的作用机理有所不同:前者延长了电子寿命τ _n,但电子传输时间τ _d变化不明显;而后者则主要是延长τ _n的同时也缩短了τ _d. 关键词： 染料敏化 太阳电池 调制光电流谱/调制光电压谱 电子输运     

不同厚度的活性层及阴极的改变对聚合物太阳电池性能的影响

以MEH-PPV(poly(2-methoxy-5-(2'-ethylhexoxy)-1,4-phenylene vinylene))为电子给体材料, PCBM(1-(3-methoxycarbonyl)-propyl-1-1-phenyl-(6,6)C₆₁)为电子受体材料, 制成了共混体系太阳电池.研究了不同厚度活性层对太阳电池性能的影响.结果表明, 活性层厚度为100 nm时,太阳电池具有最佳性能.活性层厚度的增加,增大了光生电荷的复合,减少了太阳电池的填充因子,从而减少了太阳电 关键词： 太阳电池 厚度 电极 性能     

100 keV质子辐照对空间GaAs/Ge太阳电池光电效应的影响

利用空间环境模拟设备,用固定能量为100keV、注量为1×10⁹—3×10¹²cm^-2的质子,对空间实用GaAs/Ge太阳电池进行了辐照试验.利用伏安(I-V)特性、光谱响应和光致发光(PL)光谱测试,研究分析了电池的光电效应.试验表明,电池的各种电性能参数如短路电流(I_sc)、开路电压(V_oc)、最大输出功率(P_{m< 关键词： GaAs/Ge太阳电池 质子辐照 光电效应}     

氮化硅介质中双层纳米硅薄膜的两级电荷存储

研究镶嵌在超薄非晶氮化硅(a-SiN_x)层之间的双层纳米硅(nc-Si)的电荷存储现象.利用等离子体增强化学气相淀积(PECVD)技术在硅衬底上制备a-SiN_x/a-Si/a-SiN_x/a-Si/a-SiN_x多层薄膜结构.采用常规热退火方法使非晶硅(a-Si)层晶化，形成包含双层nc-Si的金属-氮化物-半导体(MIS)结构.通过电容电压(C-V)特性测量，观测到该结构中由于电荷存储引起的C-V回滞现象，并在室温下成功观察到载流子基于Fowler-Nordheim(F-N)隧穿注入到第一层、第二层nc-Si的两级电荷存储状态.结合电流电压(I-V)特性的测量，对电荷存储的机理进行了深入分析. 关键词： 纳米硅 氮化硅 电容电压法 电流电压法     

单层有机器件的电子传输特性的数值模拟

在漂移扩散模型的基础上建立了单层有机器件的模型,包括了电荷注入、传输、空间电荷效应和陷阱的影响.电荷注入考虑了热电子发射电流和隧道电流.模拟得到的结果和文献中报道的实验测试数据一致.模拟研究了各个因素对器件J-V曲线的影响,电流和器件长度成反比,电流随着空穴注入势垒的减小而增加.电子注入势垒从1.7 eV减少到0.5 eV时,电流随着电子注入势垒的减小而减小,这主要是因为有机材料中电子迁移率太小,电子注入电流的增加可以忽略,而电子注入势垒的减小使内建势增加,在同样的电压下,场强 关键词： 有机器件 传输特性 数值模拟     

控制氧化层对双势垒纳米硅浮栅存储结构性能的影响

在等离子体增强化学气相沉积(PECVD)系统中,利用逐层淀积非晶硅(a-Si)和等离子体氧化相结合的方法制备二氧化硅(SiO₂)介质层.电容电压(C-V)和电导电压(G-V)测量结果表明：利用该方法在低温(250 ℃)条件下制备的SiO₂介质层均匀致密,其固定氧化物电荷和界面态密度分别为9×10¹¹cm^-2和2×10¹¹cm^-2·eV^-1,击穿场强达4.6 MV/cm,与热氧化形成的SiO₂介质层的性质相当.将该SiO₂介质层作为控制氧化层应用在双势垒纳米硅(nc-Si)浮栅存储结构中,通过调节控制氧化层的厚度,有效阻止栅电极与nc-Si之间的电荷交换,延长存储时间,使存储性能得到明显改善. 关键词： 等离子体氧化 二氧化硅 纳米硅 控制氧化层     

以BAlq为主体的高效高色纯度的红色有机电致磷光器件

以铱配合物红色磷光体Ir(piq)₂(acac)为掺杂剂,制备了基于BAlq材料的红色电致磷光器件,其结构为ITO/NPB(30nm)/Ir(piq)₂(acac):BAlq(25nm)/BCP(13nm)/Alq₃(35nm)/LiF(1nm)/Al(1000nm),当掺杂浓度为8%的时候,器件发光的色坐标为(x=0.67,y=0.32),基本满足了全色显示对红色发光的要求。在电压为16V时,器件达到最高亮度9380cd/m²。在电流密度为5.45mA/cm²时,外量子效率达到最大5.7%。由于磷光体Ir(piq)₂(acac)的磷光寿命较短,所以器件在高电流密度下,仍然保持较高的外量子效率。电流密度为100mA/cm²时,外量子效率仍然维持在4.7%。进一步研究表明在器件中短程的Dexter能量传递以及红光染料对空穴的直接捕获两种机制同时存在。     

Fabrication and characterization of ZnTPP:PCBM bulk heterojunction (BHJ) solar cells

Bulk heterojunction (BHJ) solar cells were fabricated based on blended films of a porphyrin derivative 5,10,15,20-Tetraphenyl-21H,23H-porphine zinc (ZnTPP) and a fullerene derivative [6,6]-phenyl-C₆₁ butyric acid methyl ester (PCBM) as the active layer. The ZnTTP:PCBM BHJ solar cells were fabricated by spin-casting of the blended layer. The weight ratios of ZnTPP and PCBM were varied from 1:1 to 0:10. The electronic and optical properties of each cell were investigated. Optical density (OD) of the blended film for each cell was extracted from its reflection and transmission curves. OD and average absorption coefficients of the active materials were used to determine film thicknesses. Absorption spectra of each component material were compared with the spectra of the blended films. Current density–Voltage (J–V) characteristics were recorded under dark as well as under the illumination of AM 1.5G (1 sun) solar spectrum. The BHJ solar cell with ZnTPP:PCBM ratio of 1:9 showed the best performance . The values of RR, V_OC , J_SC , FF and η for these ratios were 106.3, 0.4 V, 1.316 mA/cm², 0.4 and 0.21%, respectively. The cross-section of this device using SEM was also examined.     

掺杂PEDOT ∶PSS对聚合物太阳能电池性能影响的研究

研究了掺杂后poly(3,4-ethylene dioxythiophene):poly(styrenesulphonic acid)(PEDOT ∶PSS)电导率的变化以及掺杂PEDOT ∶PSS薄膜对聚合物太阳能电池器件性能的影响. 实验发现,向PEDOT ∶PSS中掺入极性溶剂二甲基亚砜(DMSO)明显提高了薄膜的电导率,掺杂后的电导率最大值达到1.25 S/cm,比未掺杂时提高了3个数量级. 将掺杂的PEDOT ∶PSS薄膜作为缓冲层应用于聚合物电池 (ITO/PEDOT ∶PSS/P3HT ∶PCBM/LiF/Al) 中,发现高电导率的PEDOT ∶PSS降低了器件的串联电阻,增加了器件的短路电流,从而提高了器件的性能. 最好的聚合物太阳能电池在100 mW/cm²的光照下,开路电压(V_oc)为0.63 V,短路电流密度(J_sc)为11.09 mA·cm^-2,填充因子(FF)为63.7%,能量转换效率(η)达到4.45%. 关键词： PEDOT ∶PSS 电导率 聚合物太阳能电池 能量转换效率     

混合溶剂对P3HT:PCBM基太阳能电池的影响

以poly(3-hexylthiophene)(P3HT)为电子给体材料,[6,6]-phenyl-C60-butyric acid methyl ester (PCBM)为电子受体材料,制备了纯氯苯(CB)溶剂、纯氯仿(CF)溶剂和氯苯/氯仿(CB/CF)不同比例混合溶剂的共混体系太阳能电池.研究了不同溶剂及不同比例混合的混合溶剂对电池性能的影响.结果表明:以CB/CF(3/1)为溶剂制备的器件,紫外可见吸收光谱和器件外量子效率曲线显示出红移现象,原子力显微图表明P3HT和PCBM间形成良好的相分离结构.在100 mW/cm2强度光照射下,其开路电压Voc为0.61 V短路电流密度Jsc为9mA/cm2,填充因子FF为57.9％,能量转换效率PCE为3.2％.     

Silicon heterojunction solar cell with amorphous silicon oxide buffer and microcrystalline silicon oxide contact layers

This Letter reports on the fabrication and characterization of silicon heterojunction solar cells with silicon oxide based buffer (intrinsic amorphous silicon oxide) and contact layers (doped microcrystalline silicon oxide) on flat p‐type wafers. The critical dependency of the cell performance on the front and rear buffer layer thickness reveals a trade‐off between the open circuit voltage V_oc and the fill factor FF. At the optimum, the highest efficiency of 18.5% (active area = 0.67 cm²) was achieved with V_oc = 664 mV, short circuit current J_sc = 35.7 mA/cm² and FF = 78.0%. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

锐钛矿相TiO2纳米管的制备及其染料敏化太阳电池

以商用金红石相TiO₂粉末为原料,通过在碱性溶液中150℃水热48h的方法合成TiO₂纳米管.采用SEM,TEM,XRD分析手段对TiO₂纳米管的形貌和结构演变进行了表征.制成的TiO₂纳米管与TritonX-100,乙酰丙酮混合后,通过丝网印刷的方法涂敷到ITO导电玻璃衬底上,并且在450℃下烧结30min后得到可应用于染料敏化太阳电池的多孔光阳极.将此光阳极浸泡于N719染料敏化后,与镀铂对电极组装电池,两者之间灌 关键词： 2纳米管')" href="#">TiO₂纳米管 染料敏化太阳电池 水热法     

Potential‐induced optimization of ultra‐thin rear surface passivated CIGS solar cells

Ultra‐thin Cu(In,Ga)Se₂ (CIGS) solar cells with an Al₂O₃ rear surface passivation layer between the rear contact and absorber layer frequently show a “roll‐over” effect in the J–V curve, lowering the open circuit voltage (V_OC), short circuit current (J_SC) and fill factor (FF), similar to what is observed for Na‐deficient devices. Since Al₂O₃ is a well‐known barrier for Na, this behaviour can indeed be interpreted as due to lack of Na in the CIGS absorber layer. In this work, applying an electric field between the backside of the soda lime glass (SLG) substrate and the SLG/rear‐contact interface is investi‐gated as potential treatment for such Na‐deficient rear surface passivated CIGS solar cells. First, an electrical field of +50 V is applied at 85 °C, which increases the Na concentration in the CIGS absorber layer and the CdS buffer layer as measured by glow discharge optical emission spectroscopy (GDOES). Subsequently, the field polarity is reversed and part of the previously added Na is removed. This way, the J –V curve roll‐over related to Na deficiency disappears and the V_OC (+25 mV), J_SC(+2.3 mA/cm²) and FF (+13.5% absolute) of the rear surface passivated CIGS solar cells are optimized. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Solar cells based on the poly(N-vinylcarbazole):porphyrin: tris(8-hydroxyquinolinato) aluminium blend system

Organic solar cells based on poly(N-vinylcarbazole)(PVK):porphyrin:tris(8-hydroxyquinolinato) aluminium(Alq3) blend p-n junction systems have been fabricated in this work.The roles of the different components in the blend system and of the amount of porphyrin have been investigated.The 5,10,15,20-tetraphenylporphyrin(TPP) and 5,10,15,20-tetra(o-chloro)phenylporphyrinato-copper(CuTClPP) are used in the solar cells.The results show that TPP is better than CuTClPP in enhancing the performance of PVK:Alq3 solar cells.When the weight ratio of PVK:TPP:Alq3 is 1:1.5:1,the best performance of solar cell is obtained.The open circuit voltage(V oc) is 0.87 V,and the short circuit current(J sc) is 17.5 μA·cm 2.In the ternary bulk hereojunction system,the device may be regarded as a cascade of three devices of PVK:TPP,TPP:Alq3 and PVK:Alq3.PVK,TPP and Alq3 can improve the hole mobility,light absorption intensity and electron mobility of the ternary bulk hereojunction system,respectively.     

Device and performance parameters of Cu(In,Ga)(Se,S)2-based solar cells with varying i-ZnO layer thickness

In pursuit of low-cost and highly efficient thin film solar cells, Cu(In,Ga)(Se,S)₂/CdS/i-ZnO/ZnO:Al (CIGSS) solar cells were fabricated using a two-step process. The thickness of i-ZnO layer was varied from 0 to 454 nm. The current density-voltage (J-V) characteristics of the devices were measured, and the device and performance parameters of the solar cells were obtained from the J-V curves to analyze the effect of varying i-ZnO layer thickness. The device parameters were determined using a parameter extraction method that utilized particle swarm optimization. The method is a curve-fitting routine that employed the two-diode model. The J-V curves of the solar cells were fitted with the model and the parameters were determined. Results show that as the thickness of i-ZnO was increased, the average efficiency and the fill factor (FF) of the solar cells increase. Device parameters reveal that although the series resistance increased with thicker i-ZnO layer, the solar cells absorbed more photons resulting in higher short-circuit current density (J_sc) and, consequently, higher photo-generated current density (J_L). For solar cells with 303-454 nm-thick i-ZnO layer, the best devices achieved efficiency between 15.24% and 15.73% and the fill factor varied between 0.65 and 0.67.