Direct bandgap optical transitions in Si nanocrystals

The effect of quantum confinement on the direct bandgap of spherical Si nanocrystals has been modelled theoretically. We conclude that the energy of the direct bandgap at the Γ-point decreases with size reduction: quantum confinement enhances radiative recombination across the direct bandgap and introduces its “red“ shift for smaller grains. We postulate to identify the frequently reported efficient blue emission (F-band) from Si nanocrystals with this zero-phonon recombination. In a dedicated experiment, we confirm the “red“ shift of the F-band, supporting the proposed identification.     

Direct bandgap optical transitions in Si nanocrystals

JETP Letters - The effect of quantum confinement on the direct bandgap of spherical Si nanocrystals has been modelled theoretically. We conclude that the energy of the direct bandgap at the...     

Multiphoton resonant transitions in atomic Ba in the presence of additional strong off-resonant radiation

The multiphoton transitions in atomic Ba are experimentally studied in the presence of strong off-resonant radiation that generates additional atomic polarization in the ground state. It is demonstrated that the additionally induced polarization of the Ba atoms in the ground state leads to a higher probability of the multiphoton transitions from this state.     

Stark effect on donor transitions in high-purity GaAs

A quantitative study of line narrowing of the 1s?2p_- transitions in hydrogenic GaAs donors with increasing magnetic field shows that the observed widths are due to Stark-effect inhomogeneous broadening. From the parameters involved we conclude that internal electric fields should very often play a dominant role in determining lineshapes of shallow impurity optical transitions in high purity partly compensated semiconductors at low temperatures.     

Multiphoton transitions in direct-gap semiconductors

Multiphoton transitions in direct-gap semiconductors are studied considering a “non-perturbative” approach in which the final state is represented by a Volkov wavefunction. Analytical solutions are obtained for multiphoton transition rates. The relation between multiphoton absorption and tunneling is discussed.     

Exciton-phonon coupling in indirect gap AgBr nanocrystals

The resonance Raman scattering observed in the exciton region of indirect AgBr nanocrystals with mean particle radius R ≈ 5 nm is analyzed. Considering the processes as absorption followed by emission and calculating the size dependent exciton energies by the donor-like exciton model of Ekimov et al. [1], the 1TO(L) and 2TO(L)&LO(Γ) resonance behavior can be well-reproduced. The analysis of the Raman spectral lineshape based on linear exciton-phonon coupling shows a substantial increase of coupling strength with excitation photon energy. It is attributed to enhanced acoustic and surface phonon interaction of higher exciton states.     

Quantum-confined Stark effect and intraband transitions in a semiconductor spherical layer

The effect of an external homogeneous electric field on the states of charge carriers in a size-quantized spherical layer is considered. An explicit dependence of the energy shift on the external field strength and the geometric sizes of the sample is obtained, and the electro-optical absorption coefficient for intraband dipole transitions is calculated.     

The optical Stark effect in semiconductor quantum wires

A new approach for controlling the optical emission wavelength of semiconductor quantum wires is proposed. The wavelength control resides upon the effect of an intense, long-wavelength laser field radiation applied to the semiconductor structure. Under such condition a strong optical Stark effect leads to optical tunability. Calculation of the optical Stark effect was carried out in the frame of the nonperturbative theory and finite difference method. Different geometries concerning the size of GaAs–AlGaAs quantum wires as well as the polarization direction and the strength of the applied laser field with respect to the quantum structure were considered.     

Measurement of the optical Stark effect in semiconducting carbon nanotubes

A strong optical Stark effect has been observed in (6,5) semiconducting single-walled carbon nanotubes by femtosecond pump-probe spectroscopy. The response is characterized by an instantaneous blueshift of the excitonic resonance upon application of pump radiation at photon energy well below the band gap. The large Stark effect is attributed to the enhanced Coulomb interactions present in these one-dimensional materials.     

Multiphoton transitions for the harmonic oscillator

2- and 3-photon electric dipole transitions for the harmonic oscillator are shown to have zero intensity. This is extended to the general cases of Δv?=?n and Δv?=?n???2 for n-photon transitions. Although not proved in general, it seems likely that all multiphoton transition moments vanish. This suggests that electric dipole multiphoton transition intensity is due to anharmonicity.     

Multiphoton absorption controlled by the resonance optical stark effect in crystals

Probabilities of n-photon transitions between upper valence and lower conduction bands under conditions in which the frequency of light is in resonance with the frequency of adjacent transition between two conduction bands are calculated for arbitrary integer n. The case of n = 3 is investigated in detail. Effects caused by transformation of the electronic band spectrum due to the resonance optical Stark effect are analyzed. It is shown that the rate of photogeneration of electron-hole pairs as a function of radiation intensity j is nonmonotonic and includes areas of extremely fast rise and/or decrease due to the appearance of new van Hove singularities in the modified band spectrum.     

Dispersive phonon modes by resonant Raman scattering in AgBr

Dispersive Raman modes are observed in AgBr at low temperatures when the incident laser light is tuned across the indirect Γ-L^′₃ exciton absorption. These modes occur as sidebands of the resonantly enhanced 2 TO(L), TO+LA(L) and 2 LA(L) Raman peaks and are interpreted as being due to three- and four-phonon processes, respectively. They involve longitudinal acoustic phonons near the Brillouin zone center that exhibit strong dispersion. From analysing the spectra the relaxation of the intermediate exciton state can be studied in detail. The model applied enables us to obtain directly the average effective mass of the ls indirect exciton as 1.5 electron masses.     

Interband phototransitions in AgBr nanocrystals assisted by free carriers

The photolysis of AgBr nanocrystals irradiated by picosecond light pulses with quantum energies of 3.51 and 1.17 eV is theoretically analyzed. The observed dependences of the photometric density on the long-wavelength radiation intensity are shown to be determined by the photogeneration of nonequilibrium electron-hole pairs as a result of indirect interband phototransitions involving free electrons. For such electrons to be involved in this process, they should possess a high kinetic energy, which is acquired due to intraband non-linear absorption of the intense long-wavelength radiation.     

Exciton-polariton in WS_2 microcavity in the presence of the optical Stark effect

Exciton-polaritons offer an exceptional platform for future photoelectronic and quantum information applications. The influence of the optical Stark effect on exciton-polaritons in a microcavity embodied with a monolayer WS2 is studied. A polarization dependent model is proposed to study the change of strongly coupled excitons and photons in a WS2 microcavity. It is revealed through both steady and dynamical states analysis that an outside optical Stark pulse can effectively vary the polariton characteristics, such as dispersion, exciton, and photon fractions, through blue shifting of excitonic resonance. Thus, the analysis and control of exciton-polaritons in a WS2 microcavity via a spin-selective trigger could be achievable.     

Laser transitions under resonant optical pumping of donor centres in Si:P

Terahertz stimulated emission of phosphorus donors in silicon optically excited by radiation from the free-electron laser FELIX has been studied. It is found that a spectral line of the Si:P laser emission depends on pump frequency. Stimulated emission arises on the 2p₀→1s(E) intra-centre transition (21.2 meV) under resonant pumping of the 2p₀ state and on the 2p₀→1s(T₂) transition (22.3 meV) under pumping of the 2p_± or higher odd-parity donor states. The line shift is attributed to the Auger redistribution of the 1s(E)- and 1s(T₂)-state populations. Received: 7 November 2002 / Revised version: 7 April 2003 / Published online: 14 May 2003 RID="*" ID="*"Corresponding author. Fax: +49-30/6705-55-07, E-mail: sergeij.pavlov@dlr.de RID="**" ID="**"On leave from: The Institute for Physics of Microstructures, Nizhny Novgorod, Russia