Radiation damage in triglycine sulphate due to fast neutron irradiation

Abstract

The change in electrical properties of TGS crystals due to induced defects created by fast neutron irradiation of two different energies (2 and 14 MeV) and different integrated neutron fluxes have been studied in the vicinity of phase transition. It is observed that the electrical conductivity increases with increase of neutron fluence up to 1.7 × 10¹⁰ n · cm^?2 and the values of the relative change of electrical conductivity in case of 2 MeV are higher than that of 14 MeV neutrons at the same neutron fluence (φ)     

Simulation of high fluence fast neutron damage with heavy ion bombardment

316 stainless steel has been irradiated with 5 MeV Cu ions to a fluence of 2 × 10¹⁶ ions/cm² at 500°C. Transmission electron microscopy of this sample reveals that 6 × 10¹⁵ voids/cm² of average diameter equal to 180 Å were produced. A method for correlating the fluence of ions with equivalent neutron fluences is described. This method predicts that the Cu bombardment in this study should produce a microstructure similar to that found in steel irradiated with 2–5 × 11²² neutrons/cm². A comparison of the ion produced voids with those found after previous neutron irradiation experiments confirms this prediction.     

The effect of fast neutron irradiation on the optical modulation spectra of GaAs

The electroreflectance and wavelength-modulated reflectance spectra of GaAs were measured before and after several reactor irradiation periods. High resistivity n type GaAs crystals were irradiated at a temperature between 300 and 310 K up to a fast neutron fluence of 3.3 × 10¹⁷n/cm². The E₀ and E₀+Δ_o peaks shift nonlinearly toward lower energy, the change reaching a maximum value of about ? 50 meV at 10¹⁷n/cm². At this fluence an additional peak appears at 1.33 eV. The E₁ and E₁+Δ₁ peaks move almost linearly toward higher energy with increasing fast neutron fluence, the shift being about + 25 meV at 2 × 10¹⁷n/cm². The results are discussed taking into account infrared absorption measurements and the calculations made by McNichols, Hayes and Ginell concerning the metallic GaAs precipitates. The effect of possible internal stress produced by the fast neutron bombardment on the modulation spectra is also discussed.     

Dosimetry and fast neutron energies characterization of photoneutrons produced in some medical linear accelerators

This work focusses on the estimation of induced photoneutrons energy, fluence, and strength using nuclear track detector (NTD) (CR-39). Photoneutron energy was estimated for three different linear accelerators, LINACs as an example for the commonly used accelerators. For high-energy linear accelerators, neutrons are produced as a consequence of photonuclear reactions in the target nuclei, accelerator head, field-flattening filters and beam collimators, and other irradiated objects. NTD (CR-39) is used to evaluate energy and fluence of the fast neutron. Track length is used to estimate fast photoneutrons energy for linear accelerators (Elekta 10 MV, Elekta 15 MV, and Varian 15 MV). Results show that the estimated neutron energies for the three chosen examples of LINACs reveals neutron energies in the range of 1–2 MeV for 10 and 15 MV X-ray beams. The fluence of neutrons at the isocenter (Φ_total) is found to be (4×10⁶ n cm² Gy^?1) for Elekta machine 10 MV. The neutron source strengths Q are calculated. It was found to be 0.2×10¹² n Gy^?1 X-ray at the isocenter. This work represents simple, low cost, and accurate methods of measuring fast neutrons dose and energies.     

Measuring fluence of fast neutrons with planar silicon detectors

The results of measurements of 1-MeV (Si) equivalent fast neutron fluence with silicon planar detectors are reported. The measurement method is based on the linear dependence of the reverse detector current increment on the neutron fluence: ΔI = α _I × Φ × V. This technique provides an opportunity to measure the equivalent fluence in a wide dynamic range from 108 to 10¹⁶ cm^–2 with an unknown neutron energy spectrum and without detector calibration. The proposed method was used for monitoring in radiation resistance tests of different detector types at channel no. 3 of IBR-2 and for determining the fluence of fission and leakage neutrons at the KVINTA setup.     

Effects of radiations on the characteristics of alpha and fission tracks in CR-39 detectors

Abstract

The effects of neutron, gamma and alpha radiations on the alpha and fission fragment tracks registration and revelation properties of CR-39 detectors (CR-39 and CR-39(DOP) were studied. It was found that the ratio of the bulk etch rate of irradiated to unirradiated (V_G(irr.)/V_G(unirr.) detectors is linearly dependent on dose. An exponential decrease in fission track densities with increase in neutron fluence was observed. The ratio of V_G(irr.)/V_G(unirr.) was found to be high in CR-39 than that in CR-39(DOP) exposed to the same reactor neutron fluence. The decrease in fission track densities with increase in neutron fluence was observed to be faster in CR-39 than in CR-39(DOP). This indicates that doping with dioctyl phthalate improves the radiation resistance of CR-39 detectors. It was observed that in detectors exposed to an alpha flux of the order of 9.36 × 10⁶ / cm², the fission track density was reduced by 11% and thereafter it remained constant. The results also indicate that thermal neutron fluence up to 7.01 ×10¹¹ neutrons/cm² does not affect the alpha and fission track densities. I.R. spectra were also studied to find out the nature of chemical changes produced by these radiations on CR-39.     

Thermo,Iono and photoluminescence properties of 100 MeV Si7+ ions bombarded CaSiO3:Eu3+ nanophosphor

This paper reports on the thermo (TL), iono (IL) and photoluminescence (PL) properties of nanocrystalline CaSiO₃:Eu³⁺ (1–5 mol %) bombarded with 100 MeV Si⁷⁺ ions for the first time. The effect of different dopant concentrations and influence of ion fluence has been discussed. The characteristic emission peaks ⁵D₀→⁷F_J (J=0, 1, 2, 3, 4) of Eu³⁺ ions was recorded in both PL (1×10¹¹–1×10¹³ ions cm^?2) and IL (4.16×10¹²–6.77×10¹² ions cm^?2) spectra. It is observed that PL intensity increases with ion fluence, whereas in IL the peaks intensity increases up to fluence 5.20×10¹² ions cm^?2, then it decreases. A well resolved TL glow peak at ～304 °C was recorded in all the ion bombarded samples at a warming rate of 5 °C s^?1. The TL intensity is found to be maximum at 5 mol% Eu³⁺ concentration. Further, TL intensity increases sub linearly with shifting of glow peak towards lower temperature with ion fluence.     

Effects of neutron irradiation and subsequent annealing on the optical characteristics of sapphire

In this paper, the effect of neutron irradiation on sapphire single crystal with fast neutron of 1.0×10¹⁸ and 1.0×10¹⁹ neutrons/cm² has been investigated along with the effect of annealing temperature. It is found that the colorless transparent sapphire single crystals were turned yellow after 10 MeV fast neutron irradiation at room temperature. There are peaks at 206, 230, 258, 305, 358 and 452 nm after neutron irradiation. And the intensity of optical absorption bands decrease with wavelength and annealing temperature. A new absorption peak at 452 nm was found after isothermal annealing at 400 °C for 10 min, which was ascribed to F₂⁺ color center. Because of the recombination of interstitial ions and vacancies, color centers were almost removed after annealing at 1000 °C. The TL peaks were found to shift to higher temperature after neutron irradiation. And a higher fluence of the neutron irradiation would result in deep traps revealed as the new TL peaks at 176 and 227 °C.     

Influence of nitrogen implantation on thermoluminescence of synthetic quartz

Thermoluminescence (TL) of synthetic quartz exposed to beta irradiation following implantation with 60?keV N⁺ ions at fluences ranging between 1?×?10¹⁴ and 5?×?10¹⁵?ions/cm² is reported. The glow curve measured at 5°C/s typically consists of a prominent peak near 110°C, studied in this work, and minor glow peaks at around 130°C and 190°C. The TL intensity of the main peak increased both with implantation and with fluence of implantation. The dependence of the intensity on heating rate and fluence suggests that the implantation introduces new defects that may possibly act as recombination centres. The increase in TL intensity with the heating rate exhibited by implanted samples has been observed in other luminescence materials. This anti-quenching phenomenon has been described as a competition effect between multiple luminescence pathways in luminescence materials. Kinetic analysis of the main glow peak using the initial rise, various heating rate and glow curve deconvolution methods shows that the activation energy of the main peak is about 0.7?eV with no systematic change due to ion fluence.     

The effects of fast-neutron irradiation on tensile strengths of carbon fibers

Two types of commercially available carbon fibers (high tensile strength, HTS, and high modulus, HMS) were irradiated in the Ground Test Reactor in environments of air and of liquid nitrogen (LN₂). The tensile strength of HTS fibers irradiated in air increased sharply above a fast-neutron fluence of 6 × 10¹⁷ n/cm² (E> 1 MeV) and was 17 per cent greater than the strength of unirradiated control fibers at a fluence of 8.5 × 10¹⁷ n/cm², but then the strengrh began to decrease for additional neutron exposure in air and fell 25 per cent below the control strength at the highest fluence of 4.5 × 10¹⁸ n/cm². However, when irradiated in LN₂ where surface oxidation did not take place, the room-temperature strength of HTS fibers continued to increase beyond 8.5 × 10¹⁷ n/cm² and became almost 30 per cent greater than the control strength for a fluence of 3 × 10¹⁸ n/cm². The tensile strength of HMS fibers irradiated in air increased slowly but steadily with neutron exposure and was only 4 per cent greater than the control strength at the highest fluence of 4.5 × 10¹⁸ n/cm²; the room-temperature strength of the HMS fibers decreased by 13 per cent when irradiated to a fluence of 3 × 10¹⁸ n/cm² in LN₂.     

Neutron fluence spectrometry using disk activation

A simple and robust detector for spectrometry of environmental neutrons has been developed. The technique is based on neutron activation of a series of different metal disks followed by low-level gamma-ray spectrometry of the activated disks and subsequent neutron spectrum unfolding. The technique is similar to foil activation but here the applied neutron fluence rates are much lower than usually in the case of foil activation. The detector has been tested in quasi mono-energetic neutron fields with fluence rates in the order of 1000–10000 cm⁻² s⁻¹, where the obtained spectra showed good agreement with spectra measured using a Bonner sphere spectrometer. The detector has also been tested using an AmBe source and at a neutron fluence rate of about 40 cm⁻² s⁻¹, again, a good agreement with the assumed spectrum was achieved.     

Field ion microscopy of cascades of atomic displacements in metals and alloys after various types of irradiation

Experimental results on atomic-spatial investigation of radiative defect formation in surface layers of materials, initiated by neutron bombardment (of Pt, E > 0.1 MeV) and ion implantation (in Cu₃Au: E = 40 keV, F = 10¹⁶ ion/m², j = 10^?3 A/cm²), are considered. Quantitative estimates are obtained for the size, shape, and volume fraction of cascades of atomic displacements formed under various types of irradiation in the surface layers of the materials. It is shown that the average size of radiation clusters after irradiation of platinum to a fast neutron fluence of 6.7 × 10²² m^?2 (E > 0.1 MeV) is about 3.8 nm. The experimentally established average size of a radiation cluster (disordered zone) in the alloy after ion bombardment is 4 × 4 × 1.5 nm.     

Determination of Moisture Content in Coke with <Superscript>239</Superscript>Pu–Be Neutron Source and BGO Scintillation Gamma Detector

A series of experiments has been conducted at the Frank Laboratory of Neutron Physics (FLNP) of the Joint Institute for Nuclear Research (JINR) in order to study the possibility of determining the moisture content of coke using a standard neutron source. The proposed method is based on a measurement of the spectrum of prompt γ rays emitted when samples are irradiated by fast and/or thermal neutrons. The moisture content is determined from the area of the peaks of characteristic γ rays produced in the radiative capture of thermal neutrons by the proton (E_γ = 2.223 MeV) and inelastic scattering of fast neutrons by ¹⁶O (E_γ = 6.109 MeV). The ²³⁹Pu–Be neutron source (〈E _n 〉 ~ 4.5 MeV) with an intensity of ~5 × 10⁶ n/s was used to irradiate the samples under study. A scintillation detector based on a BGO crystal was used to register the characteristic γ radiation from the inelastic fast neutron scattering and slow (thermal) neutron capture. This paper presents the results of humidity measurement in the range of 2–50% [1, 2].     

Investigation of radiation resistance of fullerenes under irradiation with fast neutrons

Fullerenes C₆₀ and C₇₀ synthesized by the electric arc method and fractionated (purity grades of 99.99 and 99.90 wt %, respectively) were irradiated in a solid phase in the WWR-M reactor (Konstantinov Petersburg Nuclear Physics Institute, National Research Centre “Kurchatov Institute,” Gatchina, Russia) with the aim of determining the survivability in the range of fast neutron fluences Φ = 4 × 10¹⁵?3 × 10¹⁷ n/cm². The irradiated samples were dissolved in carbon disulfide, and intact fullerenes were extracted. With an increase in the fluence, their weight fraction in the samples S(Φ), a measure of radiation resistance of molecules, decreased, to a first approximation, exponentially: S(Φ) = exp(?Φ/Φ _D ). The estimated characteristic fluences were Φ _D = 2.4 × 10¹⁷ and 4.0 × 10¹⁷ n/cm² for C₆₀ and C₇₀, respectively.     

Small-angle neutron scattering studies on the structure of radiation defects in neutron-irradiated synthetic quartz

The supra-atomic structure of single crystals of synthetic quartz with a dislocation density of 54 cm^?2 in their initial state and after irradiation in a VVR-M reactor by fast neutrons with the energy, E _n > 0.1 MeV, at fluences of 2.3 × 10¹⁹ and 4.5 × 10¹⁹ N/cm², has been studied by the method of small-angle thermal neutron scattering. It has been established that fast neutrons create point, linear, and bulk defects throughout the entire material. It has been shown that extended defects have a significant integral length per volume unit equal to ??3 × 10¹¹ cm/cm³, and can form a consolidated network in the sample with a cell size of ??30 nm, through the channels of which the migration of impurity atoms and molecules is possible.     

Formation of bubbles and blisters in hydrogen ion implanted polycrystalline tungsten

ABSTRACT

Tungsten (W) has been regarded as one of the most promising plasma facing materials (PFMs) in fusion reactors. The formation of bubbles and blisters during hydrogen (H) irradiation will affect the properties of W. The dependence of implantation conditions, such as fluence and energy, is therefore of great interest. In this work, polycrystalline tungsten samples were separated into two groups for study. The thick samples were implanted by 18?keV H₃⁺ ions to fluences of 1?×?10¹⁸, 1?×?10¹⁹ and 1?×?10²⁰ H⁺/cm², respectively. Another thick sample was also implanted by 80?keV H₂⁺ ions to a fluence of 2?×?10¹⁷ H⁺/cm² for comparison. Moreover, the thin samples were implanted by 18?keV H₃⁺ ions to fluences of 9.38?×?10¹⁶, 1.88?×?10¹⁷ and 5.63?×?10¹⁷ H⁺/cm², respectively. Focused ion beam (FIB) combined with scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used for micro-structure analysis, while time-of-flight ion mass spectrometry (ToF-SIMS) was used to characterize the H depth profile. It is indicated that bubbles and blisters could form successively with increasing H⁺ fluence. H bubbles are formed at a fluence of ～5.63?×?10¹⁷ H⁺/cm², and H blisters are formed at ～1?×?10¹⁹ H⁺/cm² for 18?keV H₃⁺ implantation. On the other hand, 80?keV H₂⁺ ions can create more trapping sites in a shallow projected range, and thus enhancing the blisters formation with a relatively lower fluence of 2?×?10^17?H⁺/cm². The crack-like microstructures beneath the blisters are also observed and prefer to form on the deep side of the implanted range.     

Silicon negative ion implantation induced vacancy defects in thermally grown SiO2 thin films

ABSTRACT

Thermally grown SiO₂ thin films on a silicon substrate implanted with 100?keV silicon negative ions with fluences varying from 1?×?10¹⁵ to 2?×?10¹⁷ ions cm^?2 have been investigated using Electron spin resonance, Fourier transforms infrared and Photoluminescence techniques. ESR studies revealed the presence of non-bridging oxygen hole centers, E′-centers and P_b-centers at g-values 2.0087, 2.0052 and 2.0010, respectively. These vacancy defects were found to increase with respect to ion fluence. FTIR spectra showed rocking vibration mode, stretching mode, bending vibration mode, and asymmetrical stretching absorption bands at 460, 614, 800 and 1080?cm^?1, respectively. The concentrations of Si–O and Si–Si bonds estimated from the absorption spectra were found to vary between 11.95?×?10²¹ cm^?3 and 5.20?×?10²¹ cm^?3 and between 5.90?×?10²¹ cm^?3 and 3.90?×?10²¹ cm^?3, respectively with an increase in the ion fluence. PL studies revealed the presence of vacancies related to non-bridging oxygen hole centers, which caused the light emission at a wavelength of 720?nm.     

Optically stimulated luminescence (OSL) and thermally assisted OSL in Eu2+ – Doped BaSO4 phosphor

BaSO₄:Eu²⁺ phosphor has been investigated for its photoluminescence (PL), thermoluminescence (TL), TL kinetics, optically stimulated luminescence (OSL) and thermally assisted OSL (TA-OSL) response. PL spectra showed the characteristic emission of Eu²⁺ ion at 375 nm when excited by 320 nm. The luminescence lifetime has been measured as 40 and 628 μs of fast and slow components respectively. The TL parameters such as trap depth (E), frequency factor (s) and the order of kinetics (b) are determined. The phosphor is found to be 6 and 4 times more sensitive than CaSO₄:Dy and α-Al₂O₃:C, respectively, in TL mode. However, its OSL sensitivity is 75% of α-Al₂O₃:C. It is found to possess three OSL components having photoionization cross-sections of 1.4 × 10⁻¹⁷, 1.2 × 10⁻¹⁸ and 5.2 × 10⁻¹⁹ cm² respectively. The temperature dependence of OSL studies showed that integrated TA-OSL signal increases with stimulation temperature between 50 and 250 °C, while between 260 and 450 °C the signal intensity decreases. This behavior is interpreted to arise from competing effects of thermal assistance (activation energy E_A = 0.063 ± 0.0012 eV) and depletion of trapped charges. This increase of OSL at elevated temperature can be employed for enhancing the sensitivity of phosphor for radiation dosimetry.     

50 MeV Li3+ ion irradiation effect on structural, electrical, and dielectric properties of PVA-based nanocomposite polymer electrolytes

Nanocomposite polymer electrolyte thin films of polyvinyl alcohol (PVA)-orthophosphoric acid (H₃PO₄)-Al₂O₃ have been prepared by solution cast technique. Films are irradiated with 50 MeV Li³⁺ ions having four different fluences viz. 5?×?10¹⁰, 1?×?10¹¹, 5?×?10¹¹, and 1?×?10¹² ions/cm². The effect of irradiation on polymeric samples has been studied and characterized. X-ray diffraction spectra reveal that percent degree of crystallinity of samples decrease with ion fluences. Glass transition and melting temperatures have been also decreased as observed in differential scanning calorimetry. A possible complexation/interaction has been shown by Fourier transform infrared spectroscopy. Temperature-dependent ionic conductivity shows an Arrhenius behavior before and after glass transition temperature. It is observed that ionic conductivity increases with ion fluences and after a critical fluence, it starts to decrease. Maximum ionic conductivity of ～2.3?×?10^?5 S/cm owing to minimum activation energy of ～0.012 eV has been observed for irradiated electrolyte sample at fluence of 5?×?10¹¹ ions/cm². The dielectric constant and dielectric loss also increase with ion fluences while they decrease with frequency. Transference number of ions shows that the samples are of purely ionic in nature before and after ion irradiation.     

Radiation hardening in Zircaloy-2

Annealed Zircaloy-2 was exposed to fast neutron fluences in the range 0.46 to 6.71 × 10¹⁹ nvt, E > 1 MeV, at temperatures of up to 450°C. The level of radiation hardening, as measured by the change in yield stress after irradiation, increased with irradiation temperature at least up to 380°C.

Post-irradiation annealing treatments showed that radiation anneal hardening occurred after irradiation at temperatures up to 325°C. After irradiation at 375°C, annealing treatments did not produce a further increase in the yield stress above that produced by the irradiation, however the radiation hardening persisted to 450°C. The uniform strain tended to decrease as the amount of radiation anneal hardening increased and as the fast neutron fluence increased above ～5 × 10¹⁸ nvt, E > 1 MeV.

The effects of irradiation temperature and post-irradiation annealing on the yield stress and on uniform strain are explained in terms of the strengthening of radiation damage defect clusters and their increased effectiveness to impede dislocation movement.