Defect-pit-assisted growth of GaN nanostructures: nanowires, nanorods and nanobelts

A new method using defect-pit-assisted growth technology to successfully synthesize the high-quality single crystalline GaN nanostructures by ammoniating Ga(2)O(3) films was proposed in this paper. During the ammoniating process, the amorphous middle buffer layer may unavoidably produce some defects and dislocations. Some defect pits come out, which have the lowest surface energy and can subsequently be used as a mask/template or act as potential nucleation sites to fabricate the GaN actinomorphic nanostructures. The as-prepared products are characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The results indicate that all the reflections of the samples can be indexed to the hexagonal GaN phase and the clear lattice fringes in HRTEM further confirm the growth of high-quality single-crystal GaN nanostructures. The SEM images show that the nanostructures have been realized under different experimental conditions exhibiting different shapes: nanowires, nanorods, and nanobelts. No particles or other nanostructures are found in the SEM study, demonstrating that the product possesses pure nanostructures. These nanostructures show a very good emission peak at 366 nm, which will have a good advantage for applications in laser devices using one-dimensional structures. Finally, the growth mechanism is also briefly discussed.     

Preparation and magnetic properties of Cu-ferrite nanorods and nanowires

An aqueous solution method has been developed for preparing Cu-ferrite nanorods (NRs) array and nanowires (NWs) on Cu substrate. The Cu-ferrite NRs exhibit a clear uniaxial anisotropy with the easy axis along rods. The decrease of the reduced remanence from 0.24 in the parallel magnetic field to almost zero in the perpendicular field shows a strong effect of the demagnetizing field perpendicular to the rod axis. The weaker uniaxial anisotropy makes NWs the lower saturation magnetization.     

Catalyst-free selective-area growth of vertically aligned zinc oxide nanowires

An effective method for the catalyst-free selective-area growth of single-crystalline zinc oxide nanowires on patterned substrates defined by e-beam lithography and treated by chemical etching with increased surface roughness is reported. The nanowire growth is realized via a surface-roughness-assisted vapor–solid mechanism by thermal evaporation. The nanowires are vertically aligned on sapphire and randomly oriented on silicon substrates.     

Large-scale controllable patterning growth of aligned organic nanowires through evaporation-induced self-assembly

Organic one-dimensional nanostructures are attractive building blocks for electronic, optoelectronic, and photonic applications. Achieving aligned organic nanowire arrays that can be patterned on a surface with well-controlled spatial arrangement is highly desirable in the fabrication of high-performance organic devices. We demonstrate a facile one-step method for large-scale controllable patterning growth of ordered single-crystal C(60) nanowires through evaporation-induced self-assembly. The patterning geometry of the nanowire arrays can be tuned by the shape of the covering hats of the confined curve-on-flat geometry. The formation of the pattern arrays is driven by a simple solvent evaporation process, which is controlled by the surface tension of the substrate (glass or Si) and geometry of the evaporation surface. By sandwiching a solvent pool between the substrate and a covering hat, the evaporation surface is confined to along the edge of the solvent pool. The geometry of the formed nanowire pattern is well defined by a surface-tension model of the evaporation channel. This simple method is further established as a general approach that is applicable to two other organic nanostructure systems. The I-V characteristics of such a parallel, organic, nanowire-array device was measured. The results demonstrate that the proposed method for direct growth of nanomaterials on a substrate is a feasible approach to device fabrication, especially to the fabrication of the parallel arrays of devices.     

Controlled growth of large-area, uniform, vertically aligned arrays of alpha-Fe2O3 nanobelts and nanowires

Vertically aligned iron oxide nanobelt and nanowire arrays have been synthesized on a large-area surface by direct thermal oxidation of iron substrates under the flow of O(2). The effects of reactive gas pressure, composition, and temperature have been systematically studied. It was found that nanobelts (width, tens of nanometers; thickness, a few nanometers) are produced in the low-temperature region (approximately 700 degrees C) whereas cylindrical nanowires tens of nanometers thick are formed at relatively higher temperatures (approximately 800 degrees C). Both nanobelts and nanowires are mostly bicrystallites with a length of tens of micrometers which grow uniquely along the [110] direction. The growth habits of the nanobelts and nanowires in the two temperature regions indicate the role of growth rate anisotropy and surface energy in dictating the ultimate nanomorphologies.     

Synthesis, optical properties, and growth mechanism of blue-emitting CdSe nanorods

Blue-emitting, cubic phase CdSe nanorods with an approximate diameter of 2.5 nm and lengths up to 12 nm have been synthesized at low temperature (100 degrees C) in a single surfactant using a single-source molecular precursor. Transmission electron microscopy and dynamic light scattering measurements indicate that the nanorods are formed from self-assembly of isotropic nanoclusters. Anisotropic growth in a single surfactant appears to be favored when growth occurs below the thermal decomposition temperature of the single-source precursor.     

Transfer-printing of highly aligned DNA nanowires

We developed a simple method of reproducibly creating highly aligned DNA nanowires without any surface modifications or special equipment. Stretched DNA molecules initially present on the PDMS sheet were transferred onto another surface using transfer-printing (TP). Fluorescent microscopic and atomic force microscopic images revealed that many DNA molecules were highly aligned on surfaces after TP. Furthermore, it was also possible to realize the two-dimensional assembly of DNA nanowires by repeating TP.     

Non-catalytic and template-free growth of aligned CdS nanowires exhibiting high field emission current densities

Various CdS nanostructures, including nanoparticle film, bundles of quasi-aligned and well-aligned nanowires, were fabricated with a non-catalytic and template-free MOCVD process. The well-aligned CdS nanowires exhibit unusually high field emission current densities of 225 mA cm(-2) at the applied electric field of 20 V microm(-1).     

One‐step in situ growth of magnesium ferrite nanorods on graphene and their microwave‐absorbing properties

The magnesium ferrite nanorods/graphene (MgFe₂O₄ NR/G) composites were prepared by a facile one‐step surfactant‐assisted solvothermal method. The structure and morphology of as‐prepared composite materials were characterized by electron microscopy, energy dispersive spectrometry, Raman spectrometry, X‐ray diffraction, FT‐IR and X‐ray photoelectron spectroscopy. The homogeneous MgFe₂O₄ nanorods with a typical diameter of about 100 nm were well distributed on graphene. The electromagnetic parameters were measured using a vector network analyzer. A minimum reflection loss (RL) of ?40.3 dB was observed at 14.9 GHz with a thickness of 3 mm, and the effective absorption frequency (RL  <   ? 10 dB) ranged from 12.0 to 18.0 GHz, indicating the remarkable microwave absorption performance of the MgFe₂O₄ NR/G composites. The absorbing property of as‐obtained composites was better than that of the pure MgFe₂O₄ nanorods. The synergistic effect of MgFe₂O₄ and graphene was responsible for the enhanced absorbing performance.     

Inorganic semiconductor nanowires: rational growth, assembly, and novel properties

Rationally controlled growth of inorganic semiconductor nanowires is important for their applications in nanoscale electronics and photonics. In this article, we discuss the rational growth, physical properties, and integration of nanowires based on the results from the authors' laboratory. The composition, diameter, growth position, and orientation of the nanowires are controlled based on the vapor-solid-liquid (VLS) crystal growth mechanism. The thermal stability and optical properties of these semiconductor nanowires are investigated. Particularly, ZnO nanowires with well-defined end surfaces can function as room-temperature ultraviolet nanolasers. In addition, a novel microfluidic-assisted nanowire integration (MANI) process was developed for the hierarchical assembly of nanowire building blocks into functional devices and systems.     

Directing the growth of highly aligned gold nanorods through a surface chemical amidation reaction

This paper describes the seed-mediated growth of highly aligned gold nanorods (Au NRs) over large areas directly on a Si(100) surface. The Si(100) surface is NH2-functionalized with (aminopropyl)triethoxysilane (APTES) followed by a DCC-catalyzed surface amidation reaction with acetic acid. After exposure to a gold nanoparticle (Au NP) "seed" solution, chemical seed-mediated growth of the surface-bound seeds via reduction of AuCl4- by ascorbic acid in the presence of cetyltrimethylammonium bromide leads to the growth of highly aligned Au NRs on the surface. About 80% of the NRs are aligned in the same direction within a +/-30 degrees range. Au NRs account for 19% of the nanostructures with average aspect ratio (AR) of approximately 20. The alignment direction did not correlate with the atomic arrangement of the Si(100) crystal since it varied over different regions of the sample, rotating by 90 degrees from top to bottom of an approximately 5 mm sample. Si crystallinity may still be important since alignment is not observed on amorphous glass. Surface functionalization is the key since alignment is only observed following the amidation reaction and not on NH2-functionalized, SH-functionalized, or bare Si(100) surfaces. Alignment also occurred for Au NRs grown on Si(100)/APTES reacted with succinic acid and on Ag NRs grown on Si(100)/APTES/acetic acid surfaces. This unique alignment of metal NRs promoted by a surface amidation chemical reaction may find use in nanoelectronics, chemical sensing, and plasmonics applications.     

Molten gallium as a catalyst for the large-scale growth of highly aligned silica nanowires

The vapor-liquid-solid (VLS) process is a fundamental mechanism for the growth of nanowires, in which a small size (5-100 nm in diameter), high melting point metal (such as gold and iron) catalyst particle directs the nanowire's growth direction and defines the diameter of the crystalline nanowire. In this article, we show that the large size (5-50 microm in diameter), low melting point gallium droplets can be used as an effective catalyst for the large-scale growth of highly aligned, closely packed silica nanowire bunches. Unlike any previously observed results using gold or iron as catalyst, the gallium-catalyzed VLS growth exhibits many amazing growth phenomena. The silica nanowires tend to grow batch by batch. For each batch, numerous nanowires simultaneously nucleate, grow at nearly the same rate and direction, and simultaneously stop growing. The force between the batches periodically lifts the gallium catalyst upward, forming two different kinds of products on a silicon wafer and alumina substrate. On the silicon wafer, carrot-shaped tubes whose walls are composed of highly aligned silica nanowires with diameters of 15-30 nm and length of 10-40 microm were obtained. On the alumina substrate, cometlike structures composed of highly oriented silica nanowires with diameters of 50-100 nm and length of 10-50 microm were formed. A growth model was proposed. The experimental results expand the VLS mechanism to a broader range.     

Systematic study on experimental conditions for large-scale growth of aligned ZnO nanowires on nitrides

In vapor-liquid-solid (VLS) growth, it is generally believed that nanowires would grow as long as the right catalysts and substrate are supplied as well as the growth temperature is adequate. We show here, however, that oxygen partial pressure plays a key role in determining the quality of the aligned ZnO nanowires. We present a "phase diagram" between the oxygen partial pressure and the growth chamber pressure for synthesizing high quality aligned ZnO nanowires on GaN substrate. This result provides a road map for large-scale, controlled synthesis of ZnO nanowires on nitride semiconductor substrates with the potential to meet the needs of practical applications. The chemical process involved in the growth process is also systematically elaborated based on experimental data received under different conditions.     

Size controlled growth of germanium nanorods and nanowires by solution pyrolysis directly on a substrate

Herein, we describe the controlled growth of 1 dimensional germanium nanostructures from high aspect ratio nanowires (>10 microns in length) to shorter aspect nanorods (100 nm in length) via a simple pyrolysis method. The synthetic route involves the thermal decomposition of selected germanium precursors by dropping a solution in a high boiling point solvent directly onto a pre-heated Si wafer in the presence of a copper source under inert conditions.     

Growth of large-area aligned molybdenum nanowires by high temperature chemical vapor deposition: synthesis, growth mechanism, and device application

Large-area aligned Mo nanowires have been grown on stainless steel substrates by high-temperature chemical vapor deposition with the use of Mo metal. The detailed physical and chemical growth processes regarding the formation of the nanowires have been investigated using mass spectroscopy, thermogravimetry, and differential scanning calorimetry analysis, as well as structure analysis by electron microscopy. In reference to Gibbs energy calculation, our study reveals that the growth relies on the decomposition of MoO2 vapors through condensation of its vapor at high substrate temperatures. The aligned growth is a result of competing growth with the nanowires normal to the substrate surface reaching the final growth front. The field emission measurement and the vacuum luminescent tube study show that the Mo nanowires have potential application as electron emitters.     

Template-free preparation of bunches of aligned boehmite nanowires

A simple method based on a hydrothermal process using alkali salts as mineralizers is proposed for the synthesis of aligned bunches of boehmite (gamma-AlOOH) nanowires without a template's assistance. Most bunches of aligned boehmite nanowires are constructed by two separated shorter bundles with widths of 700 to approximately 800 nm and lengths of about 1 microm. XRD patterns, FTIR spectra, and SEM and TEM images were used to characterize the products. The specific surface area and pore-size distribution of the obtained product as determined by gas-sorption measurements show that the boehmite bundles possess a high BET surface area and porosity properties. The importance of adding Na2B4O7 salts for the formation of bundle morphologies has been discussed.     

Switchable assembly of ultra narrow CdS nanowires and nanorods

We report on a simple route for the production of uniform and ultra narrow wurtzite CdS nanowires and nanorods. The nanorods are medium friendly (can exist in organic and aqueous phase) thus making them flexibly suitable for various applications. The centimeter range switchable ordering of the nanowires/rods into 3D microstrings by application of low magnitude DC electric field simply via two graphite electrodes is demonstrated. More sophisticated electrodes can be used for the same system to achieve more complex and fine patterns that can find potential use in nanoelectronics. The aligned microstrings (also wires/rods) show strong polarization dependence along their long axes. The polarized emission with respect to the unique c-axis makes the system suitable for orientation sensitive devices.     

High-quality ultralong Bi2S3 nanowires: structure, growth, and properties

A simple one-step hydrothermal method for large-scale synthesis of ultralong single-crystalline Bi2S3 nanowires was reported, and the nanowires were comprehensively characterized. The diameters of the nanowires are about 60 nm, and their lengths range from tens of microns to several millimeters. The structure of the nanowires was determined to be of the orthorhombic phase, the growth direction was along [001], and the growth mechanism was investigated based on extensive high-resolution transmission electron microscopy observations. Optical absorption experiments revealed that the Bi2S3 nanowires are narrow-band semiconductors with a band gap E(g) approximately 1.33 eV. Electrical transport measurements on individual nanowires gave a resistivity of about 1.2 ohms cm and an emission current of 3.5 microA at a bias field of 35 V/microm. This current corresponds to a current density of about 10(5) A/cm2, which makes the Bi2S3 nanowire a potential candidate for applications in field-emission electronic devices.     

Density-controlled growth of aligned ZnO nanowires sharing a common contact: a simple, low-cost, and mask-free technique for large-scale applications

An effective, low cost, simple, and mask-free pathway is demonstrated for achieving density control of the aligned ZnO nanowires grown for large-scale applications. By a slight variation of the thickness of the thermally evaporated gold catalyst film, a significant change in the density of aligned ZnO nanowires has been controlled. The growth processes of the nanowires on an Al(0.5)Ga(0.5)N substrate has been studied based on the wetting behavior of gold catalyst with or without source vapor, and the results classify the growth processes into three categories: separated dots initiated growth, continuous layer initiated growth, and scattered particle initiated growth. This study presents an approach for growing aligned nanowire arrays on a ceramic substrate with the simultaneous formation of a continuous conducting electrode at the roots, which is important for device applications, such as field emission.