Fabrication of MgB2 superconducting films by different methods

MgB₂ superconducting films have been successfully fabricated on single crystal MgO(111) and c-AL₂O₃ substrates by different methods. The film deposited by pulsed laser deposition is c-axis oriented with zero resistance transition temperature of 38.4 K, while the other two films fabricated by chemical vapor deposition and electrophoresis are c-axis textured with the zero resistance transition temperature of 38 K and 39 K, respectively. Magnetization hysteresis measurements yield critical current density J_c of 10⁷ A/cm² at 15 K in zero field for the thin film and of 10⁵ A/cm² for the thick film. For the thin film deposited by chemical vapor deposition, the microwave surface resistance at 10 K is found to be as low as 100 μΩ, which is comparable with that of a high-quality high-temperature superconducting thin film of YBCO.     

Fabrication of MgB_2 superconducting films by different methods

MgB2 superconducting films have been successfully fabricated on single crystal MgO(111) and c-AL2O3 substrates by different methods. The film deposited by pulsed laser deposition is c-axis oriented with zero resistance transition temperature of 38.4 K, while the other two films fabricated by chemical vapor deposition and electrophoresis are c-axis textured with the zero resistance transition temperature of 38 K and 39 K, respectively. Magnetization hysteresis measurements yield critical current density Jc of 107 A/cm2 at 15 K in zero field for the thin film and of 105 A/cm2 for the thick film. For the thin film deposited by chemical vapor deposition, the microwave surface resistance at 10 K is found to be as low as 100μΩ, which is comparable with that of a high-quality high-temperature superconducting thin film of YBCO.     

MoS2单晶薄膜的制备及生长机制研究

通过研究二维MoS₂薄膜的制备工艺参数以及生长规律,为过渡金属硫化物薄膜的制备工艺提供技术经验。采用化学气相沉积法,以MoO₃和S粉为前驱体,通过调控载气流速、保温时间和MoO₃的质量,制备一系列MoS₂薄膜。利用光学显微镜、拉曼光谱仪、光致发光光谱仪、原子力显微镜等测试设备对MoS₂薄膜的层数和结构进行表征;分析了工艺参数对MoS₂薄膜的影响,探索了中心成核的生长机制。结果表明,在载气流速为110 mL/min、保温时间为10 min、MoO₃的质量为2.5 mg的条件下,得到的MoS₂薄膜最优。同一衬底上存在不同厚度的连续的MoS₂薄膜。通过控制前驱体的比例和适当的工艺参数可以制备长度为100 μm甚至更大尺寸的单层MoS₂薄膜。     

原位合成CNTs/Cu-Al2O3复合材料的性能研究

对Al的质量分数分别为0.20%,0.35%,0.60%的Cu-Al合金粉末进行内氧化,得到Cu-Al₂O₃粉末。采用化学气相沉积法在Cu-Al₂O₃粉末表面原位生长碳纳米管(carbon nano tubes, CNTs),采用放电等离子烧结工艺成功制备了CNTs/Cu-Al₂O₃复合材料。采用扫描电子显微镜和透射电子显微镜观察了CNTs/Cu-Al₂O₃复合粉末、复合材料断口的形貌。采用显微硬度计、微拉伸试验机、摩擦磨损试验机分别对纯Cu及复合材料的维氏硬度、抗拉强度、摩擦因数进行测试。采用电化学工作站测试复合材料在3.5%NaCl (质量分数)水溶液中的耐腐蚀性能。结果表明,随着Al的质量分数的增加,粉末表面合成的CNTs的数量也增多。Al的质量分数为0.35%时,CNTs/Cu-Al₂O₃复合材料的综合性能最佳,与纯Cu相比,复合材料的抗拉强度和腐蚀电势分别提高了86.4%和43.2%,分别为315 MPa和-0.268 V,摩擦因数降低了53.3%,仅为0.28。     

黄铜矿结构CuInS2陶瓷和薄膜的制备及性能研究

采用固相烧结法,在真空管式炉中于960℃下保温2h,制备得到具有纯黄铜矿结构均匀致密的CuInS2陶瓷,所制备的陶瓷呈现P型导电且导电性能良好．此外,以自制的CuInS2陶瓷为靶材,采用脉冲激光沉积法在c轴取向的蓝宝石单晶衬底上制备得到高质量的外延CuInS2薄膜．XRD分析表明薄膜具有良好的沿（112）方向外延取向性,透射光谱测试分析得到薄膜光学带隙为1．4eV．     

Sb2S3对枝状TiO2阵列的修饰及其在杂化太阳电池中的应用

为了提供多条电子传输通道,增加窄禁带半导体和有机半导体的负载量,采用一步水热法,在FTO基底上制备了由纳米管和纳米线组装而成的枝状TiO₂;通过化学浴沉积法,在枝状TiO₂上成功地制备了窄禁带半导体Sb₂S₃;利用SEM,XRD,紫外-可见吸收光谱,瞬态光电流,稳态荧光光谱及J-V曲线等手段,对样品形貌、晶型、吸光性能和光电性能进行了表征和测试,探究Sb₂S₃沉积时间对电池效率的影响。结果表明：稀疏的枝状TiO₂阵列垂直于FTO导电玻璃生长,为电荷传输提供了有利条件;Sb₂S₃的加入,加强了电极材料对可见光的吸收,提高了光电流强度及荧光猝灭强度,有利于光生载流子的产生和转移;由枝状TiO₂/Sb₂S₃(3 h)/P3HT/PEDOT∶PSS/Au构成的杂化太阳电池的能量转换效率达到了1.10%,是未沉积Sb₂S₃的杂化太阳电池能量转换效率的10倍。在多级结构TiO₂上沉积Sb₂S₃,有利于提高电极材料对可见光的吸收,加强光生载流子的传输能力,拓宽光谱响应范围,提高光电性能,对于解决单纯TiO₂电极吸收强度较弱和光谱响应范围较窄等问题具有重要意义。     

Preparation of CuInSe2 thin films by four-step process

A simple process for the deposition of CulnSe₂ thin films was described. The CulnSe₂ compound was prepared by selenization of Cu-In alloy precursors, which were electrodeposited at a constant current. The selenized precursors were compacted and then annealed. The films were characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). The results indicate that single-phase CulnSe₂ is formed at 250℃ and its crystallinity of this phase is improved as the annealing temperature rises. The losses of In occur in selenization process. The dense CulnSe₂ film with comparatively smooth surface can be obtained by compaction under the pressure of 200 MPa.     

O3/H2O2工艺控制太湖原水中致嗅氨基酸

针对太湖原水中氨基酸氯化消毒后可能引发的嗅味问题,采用太湖某水厂滤后水为研究对象,考察了O₃/H₂O₂深度处理工艺对水中致嗅氨基酸的去除效果及影响因素。结果表明滤后水中致嗅氨基酸占总游离氨基酸的81.6%,采用O₃/H₂O₂工艺降解致嗅氨基酸的最佳投量为1.5 mg·L^-1O₃和0.06 mM H₂O₂,去除率91.28%,致嗅氨基酸浓度降至484.62ng·L^-1,加氯消毒后几乎没有致嗅风险。水温10～30℃范围内,O₃/H₂O₂对致嗅氨基酸的去除率随温度升高而增大;pH=6～8范围内,去除率随p H的升高而增大。另外,该组合工艺较单独O₃/H₂O₂对溴酸盐的生成也有明显抑制作用。     

利用固体电解质在CaCl_2熔盐中电解固态SiO_2制备Si

通过对固态SiO_2的理论分解电压进行计算,比较分析了惰性阳极和炭阳极条件下SiO_2电解还原的特点。利用ZrO_2(Y_2O_3)固体电解质管集成构建以Pt,O_2(Ar)|ZrO_2(Y_2O_3)为参比电极的三电极电解池,研究了惰性阳极条件下在CaCl_2熔盐中电解固态SiO_2阴极绿色制备Si的可行性。理论计算结果表明,SiO_2在惰性阳极条件下进行电解还原相比使用炭阳极时难度较大,降低气相中的氧分压有利于SiO_2的电解还原。实验结果表明,在惰性阳极条件下借助三电极电解池电解SiO_2可以成功制备Si,相应电解过程可用三相界线反应机制进行解释。     

Bi_(1.6)La_(0.4)Ti_2O_7薄膜的制备及性能研究

采用化学溶液沉积法在ITO基片上制备不同退火温度的掺镧钛酸铋Bi1.6La0.4Ti2O7(BLT)薄膜。研究了其结构、介电性能、漏电流密度与外加电压I-V关系曲线和光学带隙。XRD射线衍射测试结果表明,经500、550、600℃1 h退火后的薄膜的主晶相为烧绿石结构,无杂相生成,600℃时BLT薄膜衍射峰比其他两种温度的强。在1 kHz频率下测得的介电常数、损耗因子分别为114,3%;129,3%;194,6%。BLT薄膜的漏电流密度与外加电压关系曲线表明,BLT薄膜600℃的漏电流比550和500℃稍微减小。通过透射谱分析得到BLT薄膜的光学带隙几乎不受温度影响,均为3.7 eV。这些结果表明制备BLT固溶体薄膜较佳为退火温度600℃,具有较好的性能,在光电器件有良好的应用前景。     

纳米Al2O3颗粒对Cu-Al2O3性能的影响

采用溶胶-凝胶法制备纳米Al₂O₃颗粒,通过粉末冶金法制备氧化铝铜（Cu-Al₂O₃）。采用X射线光电子能谱仪、扫描电子显微镜、洛氏硬度仪和涡流计分别测试了Cu-Al₂O₃的结合能、微观组织、硬度和导电率。结果表明：随Al₂O₃颗粒含量的增加,Cu-Al₂O₃的硬度先升高后降低,当Al₂O₃颗粒的质量分数达到0.084%时,Cu-Al₂O₃的硬度达到最大值75.73（HRB）。Cu-Al₂O₃的导电率随着Al₂O₃颗粒含量的增加逐渐下降。Al₂O₃颗粒的质量分数为0.084%时为最佳值,Cu-Al₂O₃的硬度达到最大值,导电率达到69.1% IACS。     

Fe2O3/TiO2复合光催化剂的制备及其表征

以硝酸铁为铁源、硫酸钛为钛源,采用微乳液法制备Fe2O3/TiO2复合光催化剂,并用SEM、FTIR、XRD、BET和甲基橙脱色率对复合光催化剂进行表征。结果表明,铁与钛的摩尔比为1∶3、煅烧温度为500℃以及煅烧时间为1.5h时,所制Fe2O3/TiO2复合光催化剂疏松多孔、颗粒细小且热稳定性高,经紫外光照15min后,其对甲基橙的降解率为99.7%,与相同条件下制备的TiO2相比,Fe2O3/TiO2复合光催化剂具有更好的光催化活性和更大的比表面积。     

纳米Fe2O3-Al2O3复合材料的制备

采用溶胶-凝胶表面包覆法制备了纳米Fe₂O₃-Al₂ O₃复合材料, 利用X射线衍射和透射电镜对样品的物相、 粒度和形貌进行了研 究. 结果表明, α-Fe₂O₃掺杂降低了Al₂O₃相变温度, 在900 ℃可以得到稳定的α-Al₂O₃相.     

Involvement of NADPH oxidase NtrbohD in the rapid production of H2O2 induced by ABA in cultured tobacco cell line BY-2

The mechanisms for the production of hydrogen peroxide (H₂O₂) induced by abscisic acid (ABA) were investigated in suspension culture cells of tobacco BY-2 cells. The results showed that the immediate generation of H₂O₂, which was mainly derived from superoxide dismutase-catalyzed dismutation of superoxide radical, was significantly induced by ABA. Furthermore, treatment of the cultured tobacco cells with ABA resulted in a time-dependent quick increase in plasma membrane (PM) NADPH oxidase activity, which coincided on time and magnitude with the elevation in ABA-induced accumulation of H₂O₂. Moreover, these enhanced effects were pronouncedly inhibited by two NADPH oxidase inhibitor, diphenylene iodonium and imidazole, suggesting that PM NADPH oxidase is involved in the rapid accumulation of ₂O₂ in cultured tobacco cells. In addition, analysis of the expression level of NtrbohD, a PM NADPH oxidase gene in tobacco, by RT-PCR and protein gel blot revealed that the gene at both mRNA and protein levels was upregulated by ABA, indicating that NtrbohD participates in the ABA-stimulated rapid production of H₂O₂ in tobacco culture cells. Taken together, these findings suggest that ABA induces the rapid accumulation of reactive oxygen species via NADPH oxidase in suspension culture cells of tobacco, and that NADPH oxidase and H₂O₂ appear to be important components in ABA signal transduction pathway in plants.     

TiO2/SiO2复合光催化剂制备工艺参数优化及其表征

先以无机钛盐、硅酸盐为原料制取聚合硅酸硫酸钛,再通过液相水解法制得TiO2/SiO2复合光催化剂,并用SEM、XRD、BET和甲基橙脱色率对复合光催化剂进行表征。结果表明,TiO2/SiO2复合光催化剂制备优化工艺参数为:Ti(SO4)2作钛源、Ti/Si摩尔比为12∶1、水解反应pH值为6、煅烧温度为650℃,以此条件制备的复合光催化剂对甲基橙脱色率可达98.6%以上;TiO2/SiO2复合光催化剂为一种分散均匀的纳米级球形颗粒,其成分为以锐钛矿为主的TiO2,SiO2的复合有效抑制了TiO2晶粒的生长,同时提高了TiO2的热稳定性。     

TiO_2-SnO_2异质结纳米棒催化剂高效光降解甲基橙

采用水热法合成SnO_2-TiO_2异质结纳米棒光催化剂,该材料具有独特的纳米棒和异质结结构,可有效阻止光生电子和空穴的复合,通过光电流、X射线光电子能谱(XPS)、X射线衍射(XRD)、透射电子显微镜(TEM)等表征手段证明其异质结功效.该材料作为光催化剂,使用时能大幅提升紫外光降解甲基橙(MO)的效率.     

Involvement of NADPH oxidase NtrbohD in the rapid production of H2O2 induced by ABA in cultured tobacco cell line BY-2

The mechanisms for the production of hydrogen peroxide (H₂O₂) induced by abscisic acid (ABA) were investigated in suspension culture cells of tobacco BY-2 cells. The results showed that the immediate generation of H₂O₂, which was mainly derived from superoxide dismutase-catalyzed dismutation of superoxide radical, was significantly induced by ABA. Furthermore, treatment of the cultured tobacco cells with ABA resulted in a time-dependent quick increase in plasma membrane (PM) NADPH oxidase activity, which coincided on time and magnitude with the elevation in ABA-induced accumulation of H₂O₂. Moreover, these enhanced effects were pronouncedly inhibited by two NADPH oxidase inhibitor, diphenylene iodonium and imidazole, suggesting that PM NADPH oxidase is involved in the rapid accumulation of ₂O₂ in cultured tobacco cells. In addition, analysis of the expression level of NtrbohD, a PM NADPH oxidase gene in tobacco, by RT-PCR and protein gel blot revealed that the gene at both mRNA and protein levels was upregulated by ABA, indicating that NtrbohD participates in the ABA-stimulated rapid production of H₂O₂ in tobacco culture cells. Taken together, these findings suggest that ABA induces the rapid accumulation of reactive oxygen species via NADPH oxidase in suspension culture cells of tobacco, and that NADPH oxidase and H₂O₂ appear to be important components in ABA signal transduction pathway in plants.     

Preparation and photocatalytic activity of Cu-doped TiO2/SiO2

Cu²⁺-doped nanostructured TiO₂-coated SiO₂ (TiO₂/SiO₂) particles were prepared by the layer-by-layer assembly technique and their photocatalytic property was studied. TiO₂ colloids were synthesized by the sol-gel method using TiOSO₄ as a precursor. The experimental results showed that TiO₂ nanopowders on the surface of SiO₂ particles were well distributed and compact. The amount of TiO₂ increased with the increase in coating layers. The shell structure appeared to be composed of anatase titania nanocrystals at 550°C. The 2-layer coated TiO₂ particles on the surface showed a higher degradation rate compared with all the different-layer samples. The photocatalytic activity of Cu²⁺-doped TiO₂/SiO₂ was higher than that of undoped TiO₂/SiO₂. The optimum dopant content was about 0.10wt%.     

Density functional theory study of the reaction paths of reactions of CH3C(O)O2 radicals with HO2 in the gas phase

A DFT study on the reactions between CH₃C(O)O₂ and HO₂ radicals has been carried out. It is suggested that both the triplet and singlet potential surfaces involve a complex mechanism with the formation of loosely bound intermediate complexes of reactants and products. The reaction prefers to occur on the triplet surface to produce peracetic acid (CH₃C(O)O₂H) and triplet O₂ molecule. The CH₃C(O)O₂H can further convert into CH₃C(O)O and HO radicals.     

Density functional theory study of the reaction paths of reactions of CH3C(O)O2 radicals with HO2 in the gas phase

A DFT study on the reactions between CH₃C(O)O₂ and HO₂ radicals has been carried out. It is suggested that both the triplet and singlet potential surfaces involve a complex mechanism with the formation of loosely bound intermediate complexes of reactants and products. The reaction prefers to occur on the triplet surface to produce peracetic acid (CH₃C(O)O₂H) and triplet O₂ molecule. The CH₃C(O)O₂H can further convert into CH₃C(O)O and HO radicals.