Thermal donors in silicon: Consistent interpretation of Hall-effect and capacitance transient spectroscopy

Thermal donors are generated in oxygen-rich silicon by an anneal at 450 °C. The energy-levels of these donors are investigated by capacitance transient spectroscopy (DLTS) and the Hall effect. A level at 125 meV below the conduction band observed with DLTS exhibits a strong dependence on the electric field (Poole-Frenkel effect). Evaluation with a novel model for the Poole-Frenkel effect leads to a corrected zero-field energy of 200 meV for this level. The Hall effect indicates two thermal donors at 57 and 120 meV below the conduction band; both centers cannot be observed with our capacitance-DLTS method due to the Poole-Frenkel energy reduction by 70 meV±10 meV. The 45 meV current-DLTS level [1,2] is shown to correlate with the 120 meV Hall level.     

Interstitial iron and iron-acceptor pairs in silicon

Deep levels in iron-dopedp-type silicon are investigated by means of Deep Level Transient Spectroscopy (DLTS) and the Hall effect. Pairs of Fe with the acceptors B, Al, and Ga are observed at 0.1, 0.19, and 0.24 eV above the valence band edgeE _v. For interstitial iron, (Fe _i ), a level energy ofE _v+0.39+-0.02 eV is obtained with DLTS after correction with a measured temperature dependence of the capture cross section. The Hall effect yieldsE _v+0.37 eV for Fe_i. The annealing behavior of levels related to Fe is investigated up to 160 °C. Iron participates in at least four different types of impurity states: Fe _i , Fe-acceptor pairs, precipitations (formed above 120 °C) and an additional electrically inactive state, which is formed at room temperature.     

Structure and dynamics of clean and adsorbate-covered crystal surfaces studied by surface X-ray diffraction

Received: 24 March 1998/Accepted: 21 August 1998     

3D DuMond diagrams of multi-crystal Bragg-case synchrotron topography. II. Curved sample

The dimensional features of multi-crystal synchrotron X-ray topographs are explained by 3D DuMond diagrams for a flat double-crystal monochromator and a curved sample. Symmetric Bragg-case reflections are assumed for all crystals. σ–σ and σ–π geometries are considered, where the diffraction plane of the sample is parallel and perpendicular, respectively, to the vertical diffraction plane of the monochromator (σ polarization). It is shown that the shape of the sample image is closely connected to the shape of the volume shared by the diffraction domains of monochromator and sample in the 3D DuMond diagram. In particular, for the σ–π set-up, the image shape depends on the curvature value and sign. An experiment is reported for this latter crystal geometry to determine lattice mismatch, its lateral homogeneity and curvature value and sign in a sample made of epilayer and substrate. Received: 31 July 2000 / Accepted: 25 January 2001 / Published online: 26 April 2001     

Sequence of different types of nonlinear current oscillation in n-GaAs

In_xGa_1– xAs(x}<0.03)/GaAs lasers grown by vapor phase epitaxy using an In/Ga alloy source were characterized by double crystal X-ray (DCX) diffraction and deep level transient spectroscopy (DLTS) measurements. Based on the results obtained from (400), (511), and (¯511) DCX rocking curves, the obvious effect of In incorporation is to give an increase in the full width at half maximum of the rocking curves that correlates with a coherency of the epitaxial layers. From DLTS spectra according to the In content, the most prominent electron deep traps areE 4 (E _c-0.58eV) andE5 (E _c-0.84eV). TheE 4 trap density increases with In content while the change ofE 5 trap density is not monotonic. The trend ofE 5 trap densities versus In content is very similar to that of etch pit densities (EPDs), that is, a minimum in EPD andE 5 trap density is observed at an In content ofx0.003 but beyond this value the densities increase again with In content.     

Vibrational modes and infrared absorption of interstitial oxygen in silicon

A quasi-linear Si₂O molecule model (QLMM) is suggested from an analysis of the configuration and the interactions of an isolated oxygen atom with its neighbor silicon atoms. The vibrational modes are assigned and the infrared absorption spectra are calculated in detail with the model. The theoretical results are in reasonably good agreement with reported experimental values. This agreement shows that for the analysis of the vibrational modes of the interstitial oxygen atom in silicon crystals it is not necessary to consider the coupling of the molecule with the rest of the lattice. The interaction of the oxygen atom with its six second-nearest silicon atoms only causes the level separation of the ₂ mode and the formation of the fine structure.     

Electrical activation of boron-implanted silicon during rapid thermal annealing

The electrical activation of boron implanted in crystalline and preamorphized silicon has been investigated during rapid thermal annealing performed with halogen lamps. Samples implanted with B⁺ fluences ranging between 5×10¹⁴ and 1×10¹⁶cm⁻² and treated at temperatures between 900°C and 1100°C have been examined. When boron is implanted in crystalline Si, activation proceeds slowly atT<1000°C and cannot be completed in times typical of rapid thermal annealing (a few tens of seconds). The analysis of carrier profiles indicates that the time constant for activation is strongly affected by local damage and dopant concentration. If the total boron concentration exceeds equilibrium solubility, precipitation occurs concomitant to activation, even if the substitutional boron fraction is still lower than equilibrium solubility. ForT≧1000°C complete activation is obtained in times of about 10 s. In the case of preamorphized Si the activation occurs very quickly, during the recrystallization of the amorphous layer, for all the examined temperatures.     

Lyotropic bicontinuous cubic phase single crystals investigated using high-resolved X-ray scattering

Single crystals of an Ia d bicontinuous direct cubic phase formed by a non-ionic surfactant in water are investigated using high-resolved X-ray diffraction. The shape of the Bragg peaks confirms the existence of a 3D long-range order inside the cubic phase. A weak diffuse scattered intensity signal is measured very near the Bragg peaks. We attribute this signal to thermal diffuse scattering (TDS) and we give an estimation of the contribution of elastic waves to this TDS. Received 4 May 2000     

X-ray topography study of the cleaved Si-(111)-face

Cleaved silicon (111) faces were studied with reflection x-ray topography using a high resolving double-crystal-diffractometer. Three types of defects due to cleavage process could be observed: long-range strain due to overlap cracks along macroscopic cleavage steps, a homogeneous decrease of intensity within the inclined portion of step mainly due to optical refraction of x-rays and point-like defects along some macroscopic cleavage steps, which develop only after heat treatment. The findings are important with respect to interpretation of electrical measurements, since all types of defects may influence the surfaces state density decisively.     

The nature of the C-defects in nickel and their rôle in the interpretation of radiation damage in metals

In previous Perturbed-Angular-Correlation (PAC) studies of the - emission of ¹¹¹In probe nuclei in cold-worked or particle-irradiated nickel, it has been found that thermal annealing in the temperature regime of recovery stage III leads to the formation of so-called C-defects (Cubic defects). This is indicated by the occurrence of a new frequency of about 80 Mrad/s, in addition to the frequency (200 Mrad/s) that is due to ¹¹¹In on substitutional sites. Obviously, the C-defects are complexes consisting of ¹¹¹In and the intrinsic point-defect species that migrates freely in recovery stage III. Therefore, they have played an important rôle in the long-standing controversy on whether the recovery-stage-III defects are vacancies (one-interstitial model) or self-interstitials (two-interstitial model). The present paper reports on a novel experimental effort to reveal the nature of the C-defects by combining PAC studies on nickel samples differently pretreated in a systematic way, investigations of the Extended X-ray Absorption Fine Structure (EXAFS) on In-doped nickel, and measurements of the decay rate of ¹¹¹In nuclei in the Electron-Capture-Induced Decay (ECID). On the basis of the results of these experiments it is concluded that the defects trapped by substitutional ¹¹¹In atoms (In_s) in recovery stage III are self-interstitials (I), as expected according to the two-interstitial model. Moreover, there is evidence that the C-defects are In interstitials on tetrahedral sites (In_i) that form exclusively in the vicinity of the specimen surface from In_s – I pairs via the reaction In_s+I In_i.     

Characterization of the structure and the size distribution of branched polymers formed by co-polymerization of MMA and EGDMA

Free radical co-polymerization of methyl methacrylate (MMA) and ethyl glycol dimethyl methacrylate (EGDMA) in solution leads to the formation of polydisperse branched PMMA which grows in size until the system gels. The structure and the size distribution of the PMMA aggregates were characterized at infinite dilution using static and dynamic light scattering and size exclusion chromatography (SEC). The reaction extent was measured using SEC and Raman spectroscopy. The results show that the structure and size distribution of PMMA aggregates formed close to the gel point are compatible with those of percolating clusters. The structure factor of semi-dilute solutions of PMMA aggregates is the same as that of dilute solutions at distance scales much smaller than the correlation length of the concentration fluctuations (). However, the cut-off function of the pair correlation function at for semi-dilute solutions is more gradual than the cut-off function at for dilute solutions. Received 11 May 1998 and Received in final form 22 October 1998     

Absence of dislocation-induced luminescence in GaAs

Photoluminescence measurements on highly deformed GaAs samples in the near band edge region as well as in the region far below the bandgap are reported. The radiative recombination gives no evidence for dislocation-induced states in the energy gap.     

Growth of Semi-Insulating GaN by Using Two-Step AIN Buffer Layer

Semi-insulating GaN is grown by using a two-step A1N buffer layer by metalorganic chemical vapour deposition. The sheet resistance of as-grown semi-insulating GaN is dramatically increased to 10^13 Ω/sq by using two-step A1N buffer instead of the traditional low-temperature GaN buffer. The high sheet resistance of as-grown GaN over 10^13 Ω/sq is due to inserting an insulating buffer layer （two-step A1N buffer） between the high-temperature GaN layer and a sapphire substrate which blocks diffusion of oxygen and overcomes the weakness of generating high density carrier near interface of GaN and sapphire when a low-temperature GaN buffer is used. The result suggests that the high conductive feature of unintentionally doped GaN is mainly contributed from the highly conductive channel near interface between GaN and the sapphire substrate, which is indirectly manifested by room-temperature photoluminescence excited by an incident laser beam radiating on growth surface and on the substrate. The functions of the two-step A1N buffer layer in reducing screw dislocation and improving crystal quality of GaN are also discussed.     

Structural and Magnetic Properties of Codoped ZnO based Diluted Magnetic Semiconductors

Zn1-xCoxO （x = 0.01, 0.02, 0.05, 0.10 and 0.20） diluted magnetic semiconductors are prepared by the sol-gel method. The structural and magnetic properties of the samples are studied using x-ray diffraction （XRD）, extended x-ray absorption fine structure （EXAFS） and superconducting quantum interference device （SQUID）. The XRD patterns does not show any signal of precipitates that are different from wurtzite type ZnO when Co content is lower than x = 0.10. An EXAFS technique for the Co K-edge has been employed to probe the local structures around Co atoms doped in ZnO powders by fluorescence mode. The simulation results for the first shell EXAFS signals indicate that Zn sites can be substituted by Co atoms when Co content is lower than x = 0.05. The SQUID results show that the samples （x 〈 0.05） exhibit clear hysteresis loops at 300K, and magnetization versus temperature from 5 K to 350K at H = 100 Oe for the sample x = 0.02 shows that the samples have ferromagnetism above room temperature. A double-exchange mechanism is proposed to explain the ferromagnetic properties of the samples.     

Inelastic X-ray scattering: new possibilities for Raman spectroscopy

Inelastic X-ray scattering with meV resolution has recently become available for studies of dynamical properties and elementary excitations in solids. Contrary to Raman spectroscopy at visible wavelengths, which in first order is limited to the Brillouin-zone center, the wave vectors in hard X-ray Raman scattering are very large, and the crystal-momentum transfer to elementary excitations, whose energies may range from a few meV up to several eV, can be tuned continuously across the whole Brillouin zone. This paper reviews new and unique possibilities offered by X-ray Raman spectroscopy for crystalline solids, such as phonon-dispersion measurements (GaN), the determination of phonon self-energies (isotopically mixed diamond), and resonance effects and studies of electronic excitations (copper oxides). Received: 19 October 2001 / Accepted: 12 December 2001 / Published online: 27 March 2002 / Published online: 27 March 2002 RID="*" ID="*"Present address: Agilent Technologies Deutschland GmbH, Herrenberger Str. 130, 71034 B?blingen, Germany     

Metal-induced solid-phase crystallization of hydrogenated amorphous silicon: dependence on metal type and annealing temperature

We report on metal (Cr, Ni, or Pd)-induced solid-phase crystallization (MISPC) of plasma-enhanced chemical-vapor-deposited hydrogenated amorphous silicon at annealing temperatures ≤600 °C. MISPC is found to significantly reduce the thermal budget of crystallization at annealing temperatures as low as ∼400 °C. The lowest achievable annealing temperature is found to depend on the metal type. The metal type is also found to influence grain size and the conductivity of the polycrystalline silicon. Received: 21 June 1999 / Accepted: 20 October 1999 / Published online: 23 February 2000     

Chemical-state specificity in surface structure determination

In the pursuit of an understanding of complex surfaces, the problem of obtaining quantitative structural information about local adsorbate geometry is especially difficult. Conventional diffraction methods rely on long-range order of the adsorbed species, rarely present in complex coadsorption systems. Elementally specific local structural probes can help, but ultimately one also requires chemical-state specificity. This can be achieved in structural methods that involve detection of photoelectrons through the well-known ‘chemical shifts’ in core-level photoelectron binding energies; specific methods of this type are scanned-energy mode photoelectron diffraction (PhD) and normal-incidence X-ray standing waves (NISXW). Recent examples of chemical-shift PhD and NIXSW applications to complex coadsorption systems and to larger molecular adsorbates demonstrate this potential. Received: 28 April 2000 / Accepted: 6 June 2000 / Published online: 7 March 2001     

Vacancies and impurities in InP studied using positron lifetime and an improved Doppler-broadening spectrometer

In ^- in Zn-doped p-InP. The line-shape parameter measured by an improved Doppler-broadening spectrometer shows a significant difference between n-type and Fe-doped SI-InP materials: the S-parameter varies from 0.5203 in n-InP to 0.5184 in Fe-doped SI-InP by four times the standard deviation. A possible reason for this difference is discussed. Received: 7 January 1997/Accepted: 8 September 1997     

Angular parameters in X-ray diffraction theory

In this article, we provide a detailed mathematical analysis of the Helmholtz equation, in the context of dynamical wide-angle X-ray scattering by deformed crystals. We show that the dynamical theory of diffraction may be written without introducing a sophisticated dispersion theory, by using the following simple condition for wavevectors: |K_h|=|K₀|=k. This choice gives simple way to describe the reciprocal space mapping phenomena in a dynamical approach and simulate the diffraction curves for strained crystals over many orders of reflection. Several theoretical approaches to obtaining the angular distribution of scattered intensity are discussed.     

Oxygen and monatomic hydrogen interactions with PbTe film surfaces prepared by molecular-beam deposition

The effects on the electrical properties and surface composition of molecular-beam-deposited PbTe films to exposure by oxygen and monatomic hydrogen were investigated. Three stages of oxidation have been identified, depending on the pressure regime employed. Characteristic differences in the response of each of the three oxides to thermal annealing, electron irradiation during Auger analysis and to monatomic hydrogen exposure were observed. The kinetics of n-type doping by monatomic hydrogen, and its reversibility under ultra-high vacuum and oxygen-exposure conditions are presented.