The nonlinear optical properties of a magneto-exciton in a strained Ga_(0.2)In_(0.8)As/GaAs quantum dot

The magnetic field-dependent heavy hole excitonic states in a strained Ga0.2In0.8As/GaAs quantum dot are investigated by taking into account the anisotropy,non-parabolicity of the conduction band,and the geometrical confinement.The strained quantum dot is considered as a parabolic dot of InAs embedded in a GaAs barrier material.The dependence of the effective excitonic g-factor as a function of dot radius and the magnetic field strength is numerically measured.The interband optical transition energy as a function of geometrical confinement is computed in the presence of a magnetic field.The magnetic field-dependent oscillator strength of interband transition under the geometrical confinement is studied.The exchange enhancements as a function of dot radius are observed for various magnetic field strengths in a strained Ga0.2In0.8As/GaAs quantum dot.Heavy hole excitonic absorption spectra,the changes in refractive index,and the third-order susceptibility of third-order harmonic generation are investigated in the Ga0.2In0.8As/GaAs quantum dot.The result shows that the effect of magnetic field strength is more strongly dependent on the nonlinear optical property in a low-dimensional semiconductor system.     

Pressure-induced threshold optical pump intensity in a CdTe/ZnTe quantum dot

Pressure-induced binding energies of an exciton and a biexciton are studied taking into account the geometrical confinement effect in a CdTe/ZnTe quantum dot. Coulomb interaction energy is obtained using Hartree potential. The energy eigenvalue and wave functions of exciton and the biexciton are obtained using the self-consistent technique. The effective mass approximation and BenDaniel-Duke boundary conditions are used in the self-consistent calculations. The pressure-induced nonlinear optical absorption coefficients for the heavy hole exciton and the biexciton as a function of incident photon energy for CdTe/ZnTe quantum dot are investigated. The optical gain coefficient with the injection current density, in the presence of various hydrostatic pressure values, is studied in a CdTe/ZnTe spherical quantum dot. The pressure-induced threshold optical pump intensity with the dot radius is investigated. The results show that the pressure-induced electronic and optical properties strongly depend on the spatial confinement effect.     

闪锌矿GaN/AlGaN量子点中激子态及光学性质的研究

在有效质量近似的框架下,运用变分方法研究闪锌矿GaN/AlGaN量子点中的激子态及相关光学性质,探讨电子与空穴在量子点中的三维空间受限和有限势效应.数值计算结果显示,当量子点的尺寸增加时, 量子尺寸效应对电子和空穴的影响减弱,基态激子结合能和带间光跃迁能也都降低;而当该量子点中垒层AlGaN中 Al含量增加时,提高了量子点对电子和空穴的束缚作用, 同时基态激子结合能和带间光跃迁能都增加.数值的理论结果与相关实验测量结果一致.     

Binding energies of an exciton in a Gaussian potential quantum dot

In this paper, an exciton trapped by a Gaussian confining potential quantum dot has been investigated. Calculations are made by using the method of numerical diagonalization of Hamiltonian in the effective-mass approximation. The dependences of binding energies of the ground state and the first excited state on the size of the confining potential and the strength of the magnetic field are analysed explicitly.     

磁场和量子点尺寸对激子性质的影响

在In_0.6Ga_0.4As/GaAs量子点中,采用一维等效势模型和有限差分法理论计算了激子态的性质,得到了激子跃迁能和束缚能随磁场、横向束缚强度以及量子点尺寸的变化关系.结果表明:加入磁场后,Zeeman效应使得激子的能级简并度解除,激子的基态跃迁能与实验符合得很好;横向束缚强度或磁场强度的增加使得激子的束缚增强;量子点的尺寸对激子的束缚产生重要的影响;通过电子-空穴间平均距离以及激子体系波函数分布图像分析了其产生的物理机制.     

Radiative life time of an exciton confined in a strained GaN/Ga1-xAlxN cylindrical dot: built-in electric field effects

The binding energy of an exciton in a wurtzite GaN/GaAlN strained cylindrical quantum dot is investigated theoretically.The strong built-in electric field due to the spontaneous and piezoelectric polarizations of a GaN/GaAlN quantum dot is included.Numerical calculations are performed using a variational procedure within the single band effective mass approximation.Valence-band anisotropy is included in our theoretical model by using different hole masses in different spatial directions.The exciton oscillator strength and the exciton lifetime for radiative recombination each as a function of dot radius have been computed.The result elucidates that the strong built-in electric field influences the oscillator strength and the recombination life time of the exciton.It is observed that the ground state exciton binding energy and the interband emission energy increase when the cylindrical quantum dot height or radius is decreased,and that the exciton binding energy,the oscillator strength and the radiative lifetime each as a function of structural parameters (height and radius) sensitively depend on the strong built-in electric field.The obtained results are useful for the design of some opto-photoelectronic devices.     

Visualization of space charge field effect on excitons in a GaAs quantum dot by near-field optical wavefunction mapping

Near-field photoluminescence (PL) imaging spectroscopy was used to investigate multi-exciton and charged-exciton states confined in a single GaAs interface fluctuation quantum dot. We determined the origin of peaks in the PL spectra by employing a wavefunction mapping technique. We observed distortion of the exciton wavefunction due to the electric field produced by an excess electron at a nearby confined state. Near-field wavefunction mapping was demonstrated to be a powerful tool for visualizing the local environment, which affects the emission properties of quantum dots.     

The strain relaxation of InAs/GaAs self-organized quantum dot

This paper presents a detailed analysis of the dependence of degree of strain relaxation of the self-organized InAs/GaAs quantum dot on the geometrical parameters. Differently shaped quantum dots arranged with different transverse periods are simulated in this analysis. It investigates the total residual strain energy that stored in the quantum dot and the substrate for all kinds of quantum dots with the same volume, as well as the dependence on both the aspect ratio and transverse period. The calculated results show that when the transverse period is larger than two times the base of the quantum dots, the influence of transverse periods can be ignored. The larger aspect ratio will lead more efficient strain relaxation. The larger angle between the faces and the substrate will lead more efficient strain relaxation. The obtained results can help to understand the shape transition mechanism during the epitaxial growth from the viewpoint of energy, because the strain relaxation is the main driving force of the quantum dot's self-organization.     

CdSe/HgSe/CdSe量子点量子阱(QDQW)晶粒的光学性质和电子结构

以CdSe纳米晶体为核,用胶体化学的方法,通过化学替代反应,获得了不同阱层或不同垒层的CdSeHgSeCdSe量子点量子阱(QDQW)晶体.紫外可见光吸收谱研究表明,通过调节QDQW中间HgSe阱层的厚度从0.9nm至0,可以调节QDQW颗粒的带隙从1.8变化至2.1eV,实现QDQW纳米晶体的剪裁.光致荧光(PL)谱研究显示,QDQW形成后,CdSeHgSe纳米颗粒表面态得到钝化,显现出发光强度加强的带边荧光峰.利用有效质量近似模型,对QDQW晶粒内部电子的1s—1s态进行了估算,估算结果总体趋势与实验数据相符 关键词： 量子点量子阱晶体 能带剪裁 加强的带边荧光峰     

Steady-state linear optical properties and Kerr nonlinear optical response of a four-level quantum dot with phonon-assisted transition

The linear optical properties and Kerr nonlinear optical response in a four-level loop configuration Ga As/Al Ga As semiconductor quantum dot are analytically studied with the phonon-assisted transition(PAT). It is shown that the changes among a single electromagnetically induced transparency(EIT) window, a double EIT window and the amplification of the probe field in the absorption curves can be controlled by varying the strength of PAT κ. Meanwhile, double switching from the anomalous dispersion regime to the normal dispersion regime can likely be achieved by increasing the Rabi energy of the external optical control field. Furthermore, we demonstrate that the group velocity of the probe field can be practically regulated by varying the PAT and the intensity of the optical control field. In the nonlinear case, it is shown that the large SPM and XPM can be achieved as linear absorption vanishes simultaneously, and the PAT can suppress both third-order self-Kerr and the cross-Kerr nonlinear effect of the QD. Our study is much more practical than its atomic counterpart due to its flexible design and the controllable interference strength, and may provide some new possibilities for technological applications.     

The correlation energies and nonlinear optical absorptions of an exciton in a disc-like quantum dot

Using exact diagonalization techniques, the low-lying states of an exciton, and the linear and nonlinear optical absorptions in a disc-like quantum dot are theoretically studied. The numerical results for the typical GaAs material show the so-called quantum size effect. Also, our study is restricted on the transition between the S state (L = 0) and the P state (L = 1). The optical absorption coefficients are greatly enhanced because of the induced size confinement. Meantime, we find that the total optical absorption coefficient is about two times bigger than that obtained by without considering exciton effects. Additionally, the optical absorption saturation intensity can be controlled by the incident optical intensity I.     

Interband optical absorption in a strained CdxZn1−xO/ZnO quantum dot

Numerical calculations of the excitonic absorption spectra in a strained Cd_xZn_1−xO/ZnO quantum dot are investigated for various Cd contents. We calculate the quantized energies of the exciton as a function of dot radius for various confinement potentials and thereby the interband emission energy is computed considering the internal electric field induced by the spontaneous and piezoelectric polarizations. The optical absorption as a function of photon energy for different dot radii is discussed. Decrease of exciton binding energy and the corresponding optical band gap with the Cd concentration imply that the confinement of carriers decreases with composition x. The main results show that the confined energies and the transition energies between the excited levels are significant for smaller dots. Non-linearity band gap with the increase in Cd content is observed for smaller dots in the strong confinement region and the magnitude of the absorption spectra increases for the transitions between the higher excited levels.     

Electron-related nonlinear optical properties of cylindrical quantum dot with the Rosen-Morse axial potential

We present a theoretical study on the effects of intense laser field(ILF) and static electric field on the linear and nonlinear optical properties of a cylindrical quantum dot with Rosen-Morse axial potential under the framework of effective mass and parabolic band approximations. This study also takes into account the effects of the structure parameters(η, V_1, and R). The analytical expressions of the linear, third-order nonlinear and total optical absorption coefficients(TOACs)and the relative refractive index changes(RRICs) are obtained by using the compact-densitymatrix approach. The results of numerical calculations show that the resonant peak position of the TOACs and RRICs shifts towards lower energies and the magnitude of the peak increases with the effect of the static electric field and ILF. In addition, it is observed that while the resonant energies of the TOACs and RRICs of system shift towards the higher(lower) energies with the enhancement of η, V_1, they decrease with the augmentation of R. Thus, the findings of this study show that the optical properties of the structure can be adjusted by changing the magnitude of structure parameters and applied external fields.     

A study of nonlinear optical properties of a negative donor quantum dot

In this paper, we studied the nonlinear optical properties of a negative donor center (D⁻) in a disk-like quantum dot (QD) with a Gaussian confining potential. Calculations are carried out by using the method of numerical diagonalization of Hamiltonian matrix within the effective-mass approximation. A detailed investigation of the linear, third-order nonlinear, total optical absorptions and refractive index changes has been carried out for the D⁻ QD and the D⁰ QD. The linear, third-order nonlinear, total optical absorptions and refractive indices have been examined for a double-electron QD with and without impurity. Our results show that the optical absorption coefficients and refractive indices in a disk-like QD are much larger than their values for quantum wells and spherical QDs and the nonlinear optical properties of QDs are strongly affected not only with the confinement barrier height, dot radius, the number of electrons but also the electron-impurity interaction.     

Third-order nonlinear optical properties of excitonic state in a semiconductor quantum dot

By considering usual matrix procedures we examine how the exciton affects the nonlinear optical properties of 3-D semiconductor GaAs quantum dot. We calculate the third-order optical susceptibility of the GaAs (well) Al_xGaAs_1?x (barrier), and consequently the refractive index and the absorption coefficient. By increasing the Al content (x) in barrier material, carrier relaxation time is enhanced and the susceptibility peaks and their positions showed a blue shift, which agrees with the existing experimental work. For an anisotropic QD, the third-order nonlinear absorption coefficient depends strongly on the quantum dot width.     

Electronic transport in strained p-modulation Be-doped Ga0.8In0.2As/GaAs single quantum well

We report on the electronic transport properties of p-modulation Be-doped Ga_0.8In_0.2As/GaAs single quantum well. The experiments included the spectral photoluminescence between 8 and 300?K, and Hall effect measurements at temperatures between 14 and 300?K. The effect of strain which induces splitting of the valence band as light and heavy hole bands on transport is discussed. The calculated band alignment of the GaInAs sample using model-solid theory including strain effects indicates large conduction band discontinuities and a much smaller valance band discontinuity in GaInAs. The effect of the conduction and valance band discontinuity on the electronic transport properties is also discussed.     

The nonlinear optical rectification of a confined exciton in a quantum dot

An exciton in a disc-like quantum dot (QD) with the parabolic confinement, under applied electric field, is studied within the framework of the effective-mass approximation. The nonlinear optical rectification between the ground and the first-excited states has been examined through the computed energies and wave functions in details for the excitons. The results show that the optical rectification susceptibility obtained in a disc-like QD reach the magnitude of 10⁻² m/V, which is 3-4 orders of magnitude higher than in one-dimensional QDs. It is found that the second-order nonlinear optical properties of exciton states in a QD are strongly affected by the confinement strength and the electric field.     

GaAs基InAs量子点中类氢杂质的束缚能

在有效质量近似下,采用微扰法研究了InAs/GaAs量子点内类氢杂质基态及低激发态的束缚能.受限势采用抛物形势,在二维平面极坐标下,精确地求解了电子的薛定谔方程.数值计算结果表明,类氢杂质基态及低激发态的束缚能敏感地依赖于抛物形势的角频率,受类氢杂质的影响,谱线发生蓝移.这一结果对设计和制备量子点器件是有价值的.     

Light hole transport in a strained GaAs/In0.18Ga0.82As quantum well at high pressures

Abstract

Here we report what we believe to be the first observation of the pressure dependence of the light hole behavior in a modulation doped In_0.18Ga_0.82As/GaAs single strained quantum well grown by MBE. Transport measurements have been undertaken as a function of temperature (4–300K) and hydrostatic pressure (4–8kbar). Hole mobilities of ～17000 cm²/Vs have been obtained for sheet carrier densities of ～3.3×10¹¹ cm^?2. At low temperatures (<100K) persistent photogenerated holes have been observed. The hole mobility is found to decrease with increasing pressure at a rate intermediate between that typically observed for holes and electrons in bulk III-V semiconductors.