The nonlinear optical properties of a magneto-exciton in a strained Ga_(0.2)In_(0.8)As/GaAs quantum dot

The magnetic field-dependent heavy hole excitonic states in a strained Ga0.2In0.8As/GaAs quantum dot are investigated by taking into account the anisotropy,non-parabolicity of the conduction band,and the geometrical confinement.The strained quantum dot is considered as a parabolic dot of InAs embedded in a GaAs barrier material.The dependence of the effective excitonic g-factor as a function of dot radius and the magnetic field strength is numerically measured.The interband optical transition energy as a function of geometrical confinement is computed in the presence of a magnetic field.The magnetic field-dependent oscillator strength of interband transition under the geometrical confinement is studied.The exchange enhancements as a function of dot radius are observed for various magnetic field strengths in a strained Ga0.2In0.8As/GaAs quantum dot.Heavy hole excitonic absorption spectra,the changes in refractive index,and the third-order susceptibility of third-order harmonic generation are investigated in the Ga0.2In0.8As/GaAs quantum dot.The result shows that the effect of magnetic field strength is more strongly dependent on the nonlinear optical property in a low-dimensional semiconductor system.     

Pressure-induced threshold optical pump intensity in a CdTe/ZnTe quantum dot

Pressure-induced binding energies of an exciton and a biexciton are studied taking into account the geometrical confinement effect in a CdTe/ZnTe quantum dot. Coulomb interaction energy is obtained using Hartree potential. The energy eigenvalue and wave functions of exciton and the biexciton are obtained using the self-consistent technique. The effective mass approximation and BenDaniel-Duke boundary conditions are used in the self-consistent calculations. The pressure-induced nonlinear optical absorption coefficients for the heavy hole exciton and the biexciton as a function of incident photon energy for CdTe/ZnTe quantum dot are investigated. The optical gain coefficient with the injection current density, in the presence of various hydrostatic pressure values, is studied in a CdTe/ZnTe spherical quantum dot. The pressure-induced threshold optical pump intensity with the dot radius is investigated. The results show that the pressure-induced electronic and optical properties strongly depend on the spatial confinement effect.     

Binding energies of an exciton in a Gaussian potential quantum dot

In this paper, an exciton trapped by a Gaussian confining potential quantum dot has been investigated. Calculations are made by using the method of numerical diagonalization of Hamiltonian in the effective-mass approximation. The dependences of binding energies of the ground state and the first excited state on the size of the confining potential and the strength of the magnetic field are analysed explicitly.     

磁场和量子点尺寸对激子性质的影响

在In_0.6Ga_0.4As/GaAs量子点中,采用一维等效势模型和有限差分法理论计算了激子态的性质,得到了激子跃迁能和束缚能随磁场、横向束缚强度以及量子点尺寸的变化关系.结果表明:加入磁场后,Zeeman效应使得激子的能级简并度解除,激子的基态跃迁能与实验符合得很好;横向束缚强度或磁场强度的增加使得激子的束缚增强;量子点的尺寸对激子的束缚产生重要的影响;通过电子-空穴间平均距离以及激子体系波函数分布图像分析了其产生的物理机制.     

Radiative life time of an exciton confined in a strained GaN/Ga1-xAlxN cylindrical dot: built-in electric field effects

The binding energy of an exciton in a wurtzite GaN/GaAlN strained cylindrical quantum dot is investigated theoretically.The strong built-in electric field due to the spontaneous and piezoelectric polarizations of a GaN/GaAlN quantum dot is included.Numerical calculations are performed using a variational procedure within the single band effective mass approximation.Valence-band anisotropy is included in our theoretical model by using different hole masses in different spatial directions.The exciton oscillator strength and the exciton lifetime for radiative recombination each as a function of dot radius have been computed.The result elucidates that the strong built-in electric field influences the oscillator strength and the recombination life time of the exciton.It is observed that the ground state exciton binding energy and the interband emission energy increase when the cylindrical quantum dot height or radius is decreased,and that the exciton binding energy,the oscillator strength and the radiative lifetime each as a function of structural parameters (height and radius) sensitively depend on the strong built-in electric field.The obtained results are useful for the design of some opto-photoelectronic devices.     

Visualization of space charge field effect on excitons in a GaAs quantum dot by near-field optical wavefunction mapping

Near-field photoluminescence (PL) imaging spectroscopy was used to investigate multi-exciton and charged-exciton states confined in a single GaAs interface fluctuation quantum dot. We determined the origin of peaks in the PL spectra by employing a wavefunction mapping technique. We observed distortion of the exciton wavefunction due to the electric field produced by an excess electron at a nearby confined state. Near-field wavefunction mapping was demonstrated to be a powerful tool for visualizing the local environment, which affects the emission properties of quantum dots.     

The strain relaxation of InAs/GaAs self-organized quantum dot

This paper presents a detailed analysis of the dependence of degree of strain relaxation of the self-organized InAs/GaAs quantum dot on the geometrical parameters. Differently shaped quantum dots arranged with different transverse periods are simulated in this analysis. It investigates the total residual strain energy that stored in the quantum dot and the substrate for all kinds of quantum dots with the same volume, as well as the dependence on both the aspect ratio and transverse period. The calculated results show that when the transverse period is larger than two times the base of the quantum dots, the influence of transverse periods can be ignored. The larger aspect ratio will lead more efficient strain relaxation. The larger angle between the faces and the substrate will lead more efficient strain relaxation. The obtained results can help to understand the shape transition mechanism during the epitaxial growth from the viewpoint of energy, because the strain relaxation is the main driving force of the quantum dot's self-organization.     

The correlation energies and nonlinear optical absorptions of an exciton in a disc-like quantum dot

Using exact diagonalization techniques, the low-lying states of an exciton, and the linear and nonlinear optical absorptions in a disc-like quantum dot are theoretically studied. The numerical results for the typical GaAs material show the so-called quantum size effect. Also, our study is restricted on the transition between the S state (L = 0) and the P state (L = 1). The optical absorption coefficients are greatly enhanced because of the induced size confinement. Meantime, we find that the total optical absorption coefficient is about two times bigger than that obtained by without considering exciton effects. Additionally, the optical absorption saturation intensity can be controlled by the incident optical intensity I.     

Interband optical absorption in a strained CdxZn1−xO/ZnO quantum dot

Numerical calculations of the excitonic absorption spectra in a strained Cd_xZn_1−xO/ZnO quantum dot are investigated for various Cd contents. We calculate the quantized energies of the exciton as a function of dot radius for various confinement potentials and thereby the interband emission energy is computed considering the internal electric field induced by the spontaneous and piezoelectric polarizations. The optical absorption as a function of photon energy for different dot radii is discussed. Decrease of exciton binding energy and the corresponding optical band gap with the Cd concentration imply that the confinement of carriers decreases with composition x. The main results show that the confined energies and the transition energies between the excited levels are significant for smaller dots. Non-linearity band gap with the increase in Cd content is observed for smaller dots in the strong confinement region and the magnitude of the absorption spectra increases for the transitions between the higher excited levels.     

A study of nonlinear optical properties of a negative donor quantum dot

In this paper, we studied the nonlinear optical properties of a negative donor center (D⁻) in a disk-like quantum dot (QD) with a Gaussian confining potential. Calculations are carried out by using the method of numerical diagonalization of Hamiltonian matrix within the effective-mass approximation. A detailed investigation of the linear, third-order nonlinear, total optical absorptions and refractive index changes has been carried out for the D⁻ QD and the D⁰ QD. The linear, third-order nonlinear, total optical absorptions and refractive indices have been examined for a double-electron QD with and without impurity. Our results show that the optical absorption coefficients and refractive indices in a disk-like QD are much larger than their values for quantum wells and spherical QDs and the nonlinear optical properties of QDs are strongly affected not only with the confinement barrier height, dot radius, the number of electrons but also the electron-impurity interaction.     

The nonlinear optical rectification of a confined exciton in a quantum dot

An exciton in a disc-like quantum dot (QD) with the parabolic confinement, under applied electric field, is studied within the framework of the effective-mass approximation. The nonlinear optical rectification between the ground and the first-excited states has been examined through the computed energies and wave functions in details for the excitons. The results show that the optical rectification susceptibility obtained in a disc-like QD reach the magnitude of 10⁻² m/V, which is 3-4 orders of magnitude higher than in one-dimensional QDs. It is found that the second-order nonlinear optical properties of exciton states in a QD are strongly affected by the confinement strength and the electric field.     

Third-order nonlinear optical properties of excitonic state in a semiconductor quantum dot

By considering usual matrix procedures we examine how the exciton affects the nonlinear optical properties of 3-D semiconductor GaAs quantum dot. We calculate the third-order optical susceptibility of the GaAs (well) Al_xGaAs_1?x (barrier), and consequently the refractive index and the absorption coefficient. By increasing the Al content (x) in barrier material, carrier relaxation time is enhanced and the susceptibility peaks and their positions showed a blue shift, which agrees with the existing experimental work. For an anisotropic QD, the third-order nonlinear absorption coefficient depends strongly on the quantum dot width.     

Light hole transport in a strained GaAs/In0.18Ga0.82As quantum well at high pressures

Abstract

Here we report what we believe to be the first observation of the pressure dependence of the light hole behavior in a modulation doped In_0.18Ga_0.82As/GaAs single strained quantum well grown by MBE. Transport measurements have been undertaken as a function of temperature (4–300K) and hydrostatic pressure (4–8kbar). Hole mobilities of ～17000 cm²/Vs have been obtained for sheet carrier densities of ～3.3×10¹¹ cm^?2. At low temperatures (<100K) persistent photogenerated holes have been observed. The hole mobility is found to decrease with increasing pressure at a rate intermediate between that typically observed for holes and electrons in bulk III-V semiconductors.     

Polaron effects on linear and nonlinear optical properties of a two-electron quantum dot

The linear and nonlinear optical properties of parabolic quantum dots in which two electrons interact with each other through both coulomb repulsion and longitudinal-optical phonon are studied by using the matrix diagonalization method. With typical semiconducting GaAs-based materials, the linear, third-order nonlinear, total optical absorption coefficients and the optical refractive index have been examined. The effects of different electron-phonon coupling strengths on the linear and nonlinear optical properties are also predicted.     

Impurity related optical properties in tuned quantum dot/ring systems

In this paper, we explore the linear, third-order nonlinear, and total optical absorption coefficient (OAC) and refractive index change coefficient (RICC) of a GaAs doped quantum dot/quantum ring (QD/QR) with parabolic-inverse squared potential in conjunction with modified Gaussian confinement and taking into account the presence of on-centre shallow donor and or acceptor impurity. Calculations are done via the compact density matrix formalism and the iterative method. The two-dimensional parabolic QD/QR is subjected to uniform magnetic field oriented perpendicularly to the plane of the structure. The energy levels and wave function are derived within the framework of effective-mass and parabolic band approximation. The results exhibit that the OACs and RICC are clearly affected by different parameters of the applied confinement, strength of magnetic field, and the presence of impurity. The variation of confinement potential, nature of impurity, dot radius, cyclotron frequency of the parabolic confinement potential, and geometric parameter of the on-centre repulsive potential lead to either a red-shift or a blue-shift of the resonant peaks of the OACs and of the maximum and minimum of the RICC together with significant variations of the magnitudes of these resonant structures.     

Fabrication and electrical properties of a carbon nanotube quantum dot

Single-walled carbon nanotubes (SWNTs) were synthesized by pyrolyzing methane (CH₄) at a temperature of 900℃ on SiO₂ substrates pre-coated with iron nano-particles. Electrical contacts were fabricated onto one of the SWNTs by using an electron beam lithography process. Coulomb blockade and single-electron tunnelling characters were found at low temperatures, indicating that the SWNT in-between the electrodes forms a quantum dot. It is found that the Coulomb gap of the quantum dot is about 8.57 meV, and the factor \alpha , which converts the gate voltage to the true electrostatic potential shift, is around 200 for this device.     

Linear and nonlinear optical absorption coefficients and binding energy of a spherical quantum dot

The binding energy and wavefunctions of the 1s, 1p, 1d and 1f energy states of a spherical quantum dot (QD) with parabolic potential were calculated by using a method which is a combination of the quantum genetic algorithm (QGA) and the Hartree–Fock–Roothaan (HFR) approach. In addition, the linear and the third-order nonlinear optical absorption coefficients based on optical transitions in QDs with and without impurity were calculated. The results show that the parabolic potential has a great effect not only on the binding energies and but also on the optical absorption coefficients. Moreover, the calculated results also reveal that the linear and nonlinear optical absorption coefficients are strongly affected by the existence of impurity and the incident optical intensity.     

Fabrication of quantum dot transistors incorporating a single self-assembled quantum dot

We report on the fabrication and the characterization of quantum dot transistors incorporating a single self-assembled quantum dot. The current–voltage characteristics exhibit clear staircase structures at room temperature. They are attributed to electron tunneling through the quantized energy levels of a single quantum dot.