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1.
The influence of lithium doping on the crystallization, the surface morphology, and the luminescent properties of pulsed laser deposited Y2−xGdxO3:Eu3+ thin film phosphors was investigated. The crystallinity, the surface morphology, and the photoluminescence (PL) of films depended highly on the Li-doping and the Gd content. The relationship between the crystalline and morphological structures and the luminescent properties was studied, and Li+ doping was found to effectively enhance not only the crystallinity but also the luminescent brightness of Y2−xGdxO3:Eu3+ thin films. In particular, the incorporation of Li and Gd into the Y2O3 lattice could induce remarkable increase in the PL. The highest emission intensity was observed Li-doped Y1.35Gd0.6O3:Eu3+ thin films whose brightness was increased by a factor of 4.6 in comparison with that of Li-doped Y2O3:Eu3+ thin films.  相似文献   

2.
The red-emitting Ca0.54Sr0.16Eu0.08Gd0.12(MoO4)0.2(WO4)0.8 phosphor is improved in the emission charateristics by charge compensation, of which chromaticity coordinates (CIE) are x=0.66 and y=0.33. Three approaches to charge compensation are investigated, namely (a) 3Ca2+/Sr2+→2Eu3+/Gd3++vacancy, (b) 2Ca2+/Sr2+→Eu3+/Gd3++M+(M+ is a monovalent cation like Li+, Na+ and K+ employed as a charge compensator) and (c) Ca2+/Sr2+→Eu3+/Gd3++N (N is a monovalent anion like F, Cl, Br and I employed as charge compensation ions). Through photoluminescent spectra analyzing the radiative and non-radiative relaxation mechanisms of luminescent system are obtained. Under 20 mA forward-bias current, one red-emitting LED is made by combining 390-405 nm-emitting LED chip and the phosphor. The red-emitting phosphor has broad prospects in LED application field.  相似文献   

3.
Transparent Li-doped Gd2O3:Eu3+ thin-film phosphors were prepared by a modified sol-gel method. The effect of the Li+ ions on luminescent properties of the thin film was investigated. The results indicated that incorporation of Li+ ions into Gd2O3 lattice could result in a remarkable increase on photoluminescence or X-ray excited luminescence, and the strongest emission was observed from Gd1.84Li0.08Eu0.08O3−δ film, in which the intensity was increased by a factor of 1.9 or 2.3 in comparison with that of Gd1.92Eu0.08O3 film. And it could be achieved the highest intensity for sintering the Gd1.84Li0.08Eu0.08O3−δ film at 700 °C. Such a temperature is much lower than the typical solid-state reaction temperature for its powder phosphors. This kind of transparent thin-film phosphors may promise for application to micro X-ray imaging system.  相似文献   

4.
A red-emitting phosphor material, Gd2Ti2O7:Eu3+, V4+, by added vanadium ions is synthesized using the sol-gel method. Phosphor characterization by high-resolution transmission electron microscopy shows that the phosphor possesses a good crystalline structure, while scanning electron microscopy reveals a uniform phosphor particle size in the range of 230-270 nm. X-ray photon electron spectrum analysis demonstrates that the V4+ ion promotes an electron dipole transition of Gd2Ti2O7:Eu3+ phosphors, causing a new red-emitting phenomenon, and CIE value shifts to x=0.63, y=0.34 (a purer red region) from x=0.57, y=0.33 (CIE of Gd2Ti2O7:Eu3+). The optimal composition of the novel red-emitting phosphor is about 26% of V4+ ions while the material is calcinated at 800  °C. The results of electroluminescent property of the material by field emission experiment by CNT-contained cathode agreed well with that of photoluminescent analysis.  相似文献   

5.
Binary (ZnO)0.5(P2O5)0.5 glasses doped with Eu2O3 and nanoparticles of Gd2O3:Eu were prepared by conventional melt-quench method and their luminescence properties were compared. Undoped (ZnO)0.5(P2O5)0.5 glass is characterized by a luminescent defect centre (similar to L-centre present in Na2O-SiO2 glasses) with emission around 324 nm and having an excited state lifetime of 18 ns. Such defect centres can transfer the energy to Eu3+ ions leading to improved Eu3+ luminescence from such glasses. Based on the decay curves corresponding to the 5D0 level of Eu3+ ions in both Gd2O3:Eu nanoparticles incorporated as well as Eu2O3 incorporated glasses, a significant clustering of Eu3+ ions taking place with the latter sample is confirmed. From the lifetime studies of the excited state of L-centre emission from (ZnO)0.5(P2O5)0.5 glass doped with Gd2O3:Eu nanoparticles, it is established that there exists weak energy transfer from L-centres to Eu3+ ions. Poor energy transfer from the defect centres to Eu3+ ions in Gd2O3:Eu nanoparticles doped (ZnO)0.5(P2O5)0.5 glass has been attributed to effective shielding of Eu3+ ions from the luminescence centre by Gd-O-P type of linkages, leading to an increased distance between luminescent centre and Eu3+ ions.  相似文献   

6.
Zinc phosphate glasses doped with Gd2O3:Eu nanoparticles and Eu2O3 were prepared by conventional melt-quench method and characterized for their luminescence properties. Binary ZnO-P2O5 glass is characterized by an intrinsic defect centre emission around 324 nm. Strong energy transfer from these defect centres to Eu3+ ions has been observed when Eu2O3 is incorporated in ZnO-P2O5 glasses. Lack of energy transfer from these defect centres to Eu3+ in Gd2O3:Eu nanoparticles doped ZnO-P2O5 glass has been attributed to effective shielding of Eu3+ ions from the luminescence centre by Gd-O-P type of linkages, leading to an increased distance between the luminescent centre and Eu3+ ions. Both doped and undoped glasses have the same glass transition temperature, suggesting that the phosphate network is not significantly affected by the Gd2O3:Eu nanoparticles or Eu2O3 incorporation.  相似文献   

7.
Gd2O3:Eu3+ and Li-doped Gd2O3:Eu3+ luminescent thin films have been grown on Si(100) substrates using pulsed laser deposition. The films grown at different deposition conditions show different crystalline and morphology structures and luminescent characteristics. Although both cubic and monoclinic crystalline structures were observed in both Gd2O3:Eu3+ and Li-doped Gd2O3:Eu3+ films, the cubic structure becomes more dominant for Li-doped Gd2O3:Eu3+ films. The photoluminescence brightness data obtained from Li-doped Gd2O3:Eu3+ films indicate that Si(100) is a promising substrate for growth of high-quality Li-doped Gd2O3:Eu3+ thin-film red phosphor. In particular, the incorporation of Li+ ions into the Gd2O3 lattice induced a change of crystallinity and enhanced surface roughness. Two major factors to determine photoluminescence brightness for Li-doped Gd2O3:Eu3+ films were crystalline phase and surface roughness. The highest emission intensity was observed with Gd1.84Li0.08Eu0.08O3, whose brightness was a factor of 2.1 larger than that of Gd2O3:Eu3+ films. This phosphor is promising for applications in flat-panel displays. PACS 78.20.-e; 78.55.-m; 78.66.-w  相似文献   

8.
Samples of SrAl2O4:Eu3+ doped with B3+ and SrAl2O4:Eu3+ co-doped with B3+ and Li+ have been prepared by the solid-reaction method. The influence of B3+ and Li+ contents on luminescence property has been investigated. It is found that the substitution of B3+ for Al3+ greatly improves red emission intensity at 591, 615 and 701 nm. The dopant Li+ as charge compensator in SrAl2O4:Eu3+, B3+ can further enhance luminescence intensity. The strongest red emission is obtained in the Sr(Al1.9, B0.1)O4:Eu0.023+, Li+0.02 sample. The developed phosphors can be efficiently excited by ultraviolet (UV) light from 350 to 480 nm, which indicates that B3+ and Li+ co-doped SrAl2O4:Eu3+ is a good candidate phosphor applied in solid-state lighting in conjunction with white UV light-emitting diodes (LEDs).  相似文献   

9.
Investigation was performed on luminescent properties of novel Gd2−x Eu x MoB2O9 (0.02≤x≤2.0) phosphors. The excitation spectra consist of broad band and intense narrow lines. The 4f-4f transitions are situated in a favorable position for excitation by GaN chip emission. The emission spectra consist of transitions from the 5D0 level to the lower 7F manifold, and the emission shows no concentration quenching at higher doping level. The decay time spectra of the 5D07F2 emission are recorded. Under 395 nm excitation, the intensity of 5D07F2 transition of GdEuMoB2O9 is 1.2 times stronger than that of commercial Eu3+:Y2O2S phosphor. Gd2MoB2O9:Eu3+ phosphors are promising candidates for near-UV-based solid-state-lighting (SSL).  相似文献   

10.
A single phased white light emitting phosphors K2Ca1−xyP2O7: xEu2+, yMn2+ were synthesized by solid state reaction method. The Effective energy transfer occurs in this phosphor due to the large spectral overlap between the emission of Eu2+ and the excitation of Mn2+. The emission hue of K2Ca1−xyP2O7: xEu2+, yMn2+ from blue to white light can be obtained by tuning the Eu2+/Mn2+ content ratio. The energy transfer mechanism from Eu2+ to Mn2+ in this phosphor was carefully investigated and demonstrated to be via the dipole–quadrupole interaction.  相似文献   

11.
Novel nanosized Gd6WO12:Eu3+ phosphors were synthesized via a co-precipitation reaction. The crystal structure and morphology of the phosphors were characterized by using X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). It was found that the resultant powders show a regular and sphere-like shape with average particle size of 60 nm. Intrinsic red emission originating from Eu3+ was observed while excited at the W6+→O2− and Eu3+→O2− charge transfer bands or f-f absorption bands. The color coordinates of the phosphors were calculated to be x=0.625, y=0.375. The concentration dependence of the luminescence was studied, and optimum doping concentration for obtaining maximum emitting intensity was confirmed to be around 12 mol%. It was also found that the electric dipole-dipole interaction plays an important role for quenching luminescence of Eu3+.  相似文献   

12.
The nanowire growth behavior and photoluminescence characteristics of red-emitting oxide phosphor Gd2−xEuxO3 have been investigated in the function of activator (Eu3+) concentrations (x=0.08, 0.12, 0.16, 0.20, and 0.24). Nanowires of Gd2−xEuxO3 phosphor were prepared by the dehydration of corresponding hydroxides Gd1−x/2Eux/2(OH)3 obtained by the hydrothermal reaction. Highly uniform nanowires of 20-30 nm in diameter can grow up to several tens of micrometers in length. A number of defects on the surface of Gd1.92Eu0.08O3 nanowires, which are induced during structural transformation from hexagonal hydroxide to cubic oxide, strongly decrease the luminescence efficiency in comparison with that of the bulk phosphor. In contrast, the photoemission intensity of nanowires is significantly improved with increasing Eu3+ content (x) of Gd2−xEuxO3 solid solution. The highest relative emission intensity of nanowires is observed when the x value is close to x=0.20. This content is much higher than the optimal concentration of Eu3+ (x=0.08-0.10) for the bulk Gd2O3:Eu powder.  相似文献   

13.
Li4(Sr0.96Eu0.04)(Ca1 − xMnx)(SiO4)2 phosphors were synthesized by solid-state reactions and photoluminescence (PL) properties were investigated. These phosphors have intense absorption in n-UV region, which is suitable for excitation of UV LEDs. The orange-reddish emission of Mn2+ can be adjusted by changing the Mn2+/Eu2+ ratio. Energy transfer from Eu2+ to Mn2+ is observed. Li4(Sr0.96Eu0.04)(Ca1 − xMnx)(SiO4)2 phosphors could be used in white LEDs.  相似文献   

14.
Spinel compounds Li4Ti5−xAlxO12/C (x=0, 0.05) were synthesized via solid state reaction in an Ar atmosphere, and the electrochemical properties were investigated by means of electronic conductivity, cyclic voltammetry, and charge-discharge tests at different discharge voltage ranges (0-2.5 V and 1-2.5 V). The results indicated that Al3+ doping of the compound did not affect the spinel structure but considerably improved the initial capacity and cycling performance, implying the spinel structure of Li4Ti5O12 was more stable when Ti4+ was substituted by Al3+, and Al3+ doping was beneficial to the reversible intercalation and deintercalation of Li+. Al3+ doping improved the reversible capacity and cycling performance effectively especially when it was discharged to 0 V.  相似文献   

15.
Europium-doped cubic Gd2O3:Eu3+ nanoparticles containing various activator content in the range of 5-15 wt% were synthesized by a liquid-phase reaction method to investigate the influence of Eu3+ loading on the optical properties of phosphors by using XRD, TEM, BET, spectrometer and fluorometer. The size of Gd2O3:Eu3+ powders was in the range 21-41 nm. The phosphors showed an initial increase in luminescence and then a subsequent decrease with further doping (above 10 wt%). The decay time was reduced with increasing Eu loading; however, it decreased significantly above the 10% Eu doping. From spectroscopic studies, the Eu3+ doping ion distribution was uniform and homogeneous up to the 10 wt% loading because no concentration quenching effect was observed. However, further Eu3+ doping above 10 wt% reduced the luminescence due to the concentration quenching effect, as deduced from the shortening of the decay time.  相似文献   

16.
This study evaluated potential applications of green to yellow-emitting phosphors (Sr1−xSi2O2N2: Eu2+x) in blue pumped white light emitting diodes. Sr1-xSi2O2N2: Eu2+x was synthesized at different Eu2+ doping concentrations at 1450 °C for 5 h under a reducing nitrogen atmosphere containing 5% H2 using a conventional solid reaction method. The X-ray diffraction patterns of the prepared phosphor (Sr1-xSi2O2N2: Eu2+x) were indexed to the SrSi2O2N2 phase and an unknown intermediate phase. The photoluminescence properties of these phosphors (Sr1−xSi2O2N2: Eu2+x) showed that the samples were excited from the UV to visible region due to the strong crystal field splitting of the Eu2+ ion. The emission spectra under excitation of 450 nm showed a bright color at 545-561 nm. The emission intensity increased gradually with increasing Eu2+ doping concentration ratio from 0.05 to 0.15. However, the emission intensity decreased suddenly when the Eu2+ concentration ratio was >0.2. As the doping concentration of Eu2+ was increased, there was a red shift in the continuous emission peak. These results suggest that Sr1-xSi2O2N2: Eu2+x phosphor can be used in blue-pumped white light emitting diodes.  相似文献   

17.
Sr2SiO4:Eu3+ and Sr2SiO4:Eu3+ doped with R+(R+=Li+, Na+ and K+) phosphors were prepared by conventional solid-state reaction and investigated by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR) and photoluminescence spectroscopy. XRD patterns and SEM reveal that the optimal firing condition for Sr2SiO4:Eu3+ was 1300 °C for 4 h. The excitation and emission spectra indicate that the phosphor can be effectively excited by ultraviolet (395 nm) and blue (466 nm) light and emits intense red light peaked at around 614 nm corresponding to the 5D07F2 transitions of Eu3+. In the research work, the effect of R+ contents on luminescence property and the Eu3+ concentration quenching process have also been investigated. The Eu3+ concentration quenching mechanism was verified to be a multipole-multipole interaction and the critical energy-transfer distance was calculated to be around 14.6 Å. The dopant R+(R+=Li+, Na+ and K+) as charge compensator in Sr2SiO4:Eu3+ can further enhance luminescence intensity, and the emission intensity of Sr2SiO4:Eu3+ doping Li+ is higher than that of Na+ or K+.  相似文献   

18.
A red phosphor KGd(MoO4)2:Eu3+ was prepared by solid-state reaction technique at high temperature. Its photoluminescent property was investigated and the optimum concentration of Eu3+ doped in the KGd(MoO4)2 is 25 mol%. Compared with Y2O2S:0.05Eu3+, the obtained KGd(MoO4)2:Eu3+ shows wider excitation band around 400 nm, higher intensity of Eu3+ 5D07F2 emission upon excitation 393 nm, and the CIE chromaticity coordinates (x = 0.655, y = 0.345) are closer to the standard of National Television Standard Committee (NTSC). The optical properties of KGd(MoO4)2:Eu3+ suggest that it is an efficient red-emitting phosphor for light-emitting diode applications.  相似文献   

19.
A blue emitting phosphor of the triclinic BaCa2Si3O9:Eu2+ was prepared by the combustion-assisted synthesis method and an efficient blue emission ranging from the ultraviolet to visible was observed. The luminescence and crystallinity were investigated using luminescence spectrometry and X-ray diffractometry (XRD), respectively. The emission spectrum shows a single intensive band centered at 445 nm, which corresponds to the 4f65d1→4f7 transition of Eu2+. The excitation spectrum is a broad extending from 260 to 450 nm, which matches the emission of ultraviolet light-emitting diodes (UV-LEDs). The critical quenching concentration of Eu2+ in BaCa2Si3O9:Eu2+ phosphor is about 0.05 mol. The corresponding concentration quenching mechanism is verified to be a dipole-dipole interaction. The CIE of the optimized sample Ba0.95Ca2Si3O9:Eu0.052+ was (x, y)=(0.164, 0.111). The result indicates that BaCa2Si3O9:Eu2+ can be potentially useful as a UV radiation-converting phosphor for white light-emitting diodes (LEDs).  相似文献   

20.
(Ca1 − x, Srx)Al2Si2O8:0.06Ce3+, M+ (M+ = Li+, Na+, K+) phosphors have been prepared by conventional solid-state reaction method. The structural and optical properties of the phosphors were characterized by X-ray diffraction (XRD) technique and spectrophotometer, respectively. A regular variation was found among the XRD patterns of (Ca1 − x, Srx)Al2Si2O8:0.06Ce3+ phosphors based on the changing of Sr content. With the increase of Sr content, the maximum of emission band presented slight blue shifts (~ 15 nm). The luminescence intensity of CaAl2Si2O8:0.06Ce3+ and SrAl2Si2O8:0.06Ce3+ were significantly enhanced when K+ and Li+ were incorporated, respectively.  相似文献   

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