Distribution of aluminum and indium impurities in crystals of Ge-Si solid solutions grown from the melt

The problem regarding the distribution of aluminum and indium impurities in bulk crystals of solid solutions with a variable composition Ge_1−x Si _x (0 ≤ x ≤ 0.3) is solved in order to establish regularities of the changes in the segregation coefficients of impurities with variations in the composition of the host lattice in the germanium-silicon system. Aluminum-and indium-doped crystals of Ge_1−x Si _x (0 ≤ x ≤ 0.3) solid solutions with a silicon content decreasing along the crystallization axis are grown by a modified Bridgman method with the use of a silicon seed. The concentration distribution of impurities over the length of the crystals is determined from Hall measurements. It is demonstrated that the experimental data on the concentration distribution of impurities in the crystals are in good agreement with the results obtained from the theory according to which the equilibrium segregation coefficients of impurities vary linearly with a change in the composition of Ge-Si solid solution crystals.

     

The distribution of Ga and Sb impurities in Ge-Si crystals grown by the Bridgman method using a feeding rod

Gallium- and antimony-doped Ge_{1 ? x} Si _x crystals (0 ≤ x ≤ 0.25) have been grown by the improved Bridgman method using a silicon seed and a macrohomogeneous feeding Ge-Si rod of the corresponding composition. The impurity concentration profiles along the grown crystals were determined from Hall measurements. The mathematical problem of impurity distribution along two-component mixed crystals grown from a melt with uniform and graded composition is solved in the Pfann approximation and within the virtual-crystal model for the solid solution. It is shown that the experimental impurity distributions in Ge_{1 ? x} Si _x crystals are described well by the data calculated on the assumption of linear change in the impurity segregation coefficient with the crystal composition.     

Influence of the VPE parameters on the epitaxial film properties for the (Pb1−xSnx)1+yTe1−y system

Epitaxial films have been produced for 0 ? x ? 1 by steps of 0.1. The growth rate, crystalline quality, carrier concentration and composition have been measured as a function of source, substrate and Te₂ source temperature. The growth rate is adjustable between 0.1 and 36 μm h^-1 and the films have smooth and shiny surfaces. The crystalline quality, conduction type and carrier concentration is mainly determined by the Te₂ pressure. It is possible to choose the type and the carrier concentration in the stable region for a source composition x ? 0.2. The films are always p-type if x ? 0.3. The composition of the films is varied by the source and by the substrate temperature. It is possible to vary the film composition compared to the source composition in the range of ±20% by varying the substrate temperature.     

Preparation of Al?Ga?P?As heterostructures

The present paper reports on the results of an investigation of crystallization of multilayer structures with a narrow-gap semiconductor surrounded by two wide-gap ones in the Al-Ga-P-As system on GaAs and GaP substrates. Influence of the lattice parameters' difference on the value of thermal stress in structures with a composition gradient was determined by the bend of structures separated from the substrate. It has been proved that with the P concentration in solid solutions being less than 1% heterojunctions with less tensions than in the Al–Ga–As system are available. A new method of obtaining Al_xGa_1–xP_yAs_1–y solid solutions with the concentration of P proportional to that of Al has been worked out on the basis of which multilayer heterolight-emitting structures have been prepared.     

Some physical and magnetic properties of Mg‐Zn ferrite

Some physical properties (such as lattice parameter, density and porosity) and magnetic properties of the system Mg_1‐xZn_xFe₂O₄; where x=0,0.1,0.2,0.3,0.4,0.5and 0.6 have been studied. It was found that the lattice parameter increases with increasing the zinc concentration. The composition dependence of the physical properties is divided into two regions. The first one is for x ≤ 0.3 and the second one is for x > 0.3. From the magnetization measurements, the basic composition (MgFe₂O₄) shows the lowest magnetization, while the composition of x=0.4 shows the highest one. The behaviour of magnetization M versus composition shows also two regions for x <>0.3. The behaviour of M versus x was discussed in the bases of cation distribution. From the B‐H loops, the remanence induction B_r, saturation induction B_s and the coercive force H_c were determined and studied with x. The Curie temperature T_C was determined from the measurements of the initial permeability μ_i versus temperature. It was found T_C decreases with increasing Zn‐content. Also paramagnetic temperature T_P was determined from the behaviour of M_S vs. T. In general it was found T_P > T_C by about 7‐10 K.     

Mechanism of formation of barium cuprate-based solid solutions with perovskite-like structure doped with cadmium and yttrium oxides

The influence of Y₂O₃ and CdO content on the phase composition, structure, and electrical properties of Y₂O₃-CdO-BaO-CuO ceramics was studied. The concentration limits of the existence of the orthorhombic perovskite-like Y_xBa_{2 ? x} Cd_yCu_{1 ? y} O_{3 + δ} solid solutions (where 0.20 ≤ x ≤ 0.37 and y ≤ 0.2) and their unit-cell parameters are determined.     

Investigation of InxGa1−xAs films grown from thin solution layer

In_xGa_1−xAs films with x⩽0.12 were grown from a thin solution layer between substrates. The calculation of final film thickness as a function of liquid phase composition, based on supposition of film deposition only on the substrate, is in a good agreement with experimental results. The dependences between compositions of liquid and solid phases at 800°, 750° and 700°C were determined. The morphology of the film surface was investigated as a function of liquid phase composition and (100), (111) A, (111) B substrate orientations. Dislocation density increases from 10⁴ cm⁻² to 10⁷ cm⁻² with change of x from 0 to 0.12.     

X-Ray Diffraction Studies on Point Defects in II–VI Compounds

The point defect concentration in Te-rich CdTe and Hg_1-xCd_xTe annealed at various temperatures has been estimated from precision lattice parameters using a simple continuum inclusion model and compared with densities of electrically charged defects determined by high-temperature Hall and conductivity measurements. The nonstoichiometry is realized by cation vacancies. Dependent on the CdTe content, the ratio of total to charged defect concentrations varies between about unity for HgTe-rich composition and 75 for CdTe. Therefore, it is necessary to distinct between “electrical” and “chemical” stability regions.     

Crystal Structure Phase Transitions in the Perovskites A(Cu1−xMnx)Mn4O12(A = Na+, Ca2+, Y3+, La3+)

X-Ray diffraction and neutronographical studies on the crystal structure of the perovskitelike compounds A(Cu_1−xMn_x)Mn₄O₁₂ have been undertaken. It has been shown that the samples with 50% of Mn³⁺ in the octahedral sites have a cubic unit cell, while the samples with higher Mn³⁺ composition may have a monoclinic or rhombohedral unit cell. The temperature increase raises the symmetry to the cubic one. The concentration ranges with different symmetry type have been determined. The lowering of the symmetry of the unit cell is due to the cooperative Jahn-Teller effect.     

Influence of short-range order on the thermal stability in amorphous HfNi alloys

Amorphous Hf_1?xNi_x alloys were prepared by means of melt spinning and studied by means of differential scanning calorimetry. Their crystallization behaviour was studied by means of X-ray diffraction. The crystallization temperatures (T_x) and the activation energies for crystallization (ΔE) were determined over a wide concentration range. The former values were found to vary only slightly with concentration while the latter show a marked concentration dependence. The occurence of compositional short-range ordering (CSRO) in amorphous systems is discussed with respect to its consequences for the hole model proposed earlier. The hole model predictions appear to be only slightly affected by the occurence of CSRO owing to the mutually cancelling effects of decreasing hole formation enthalpy and decreasing configurational entropy. From the concentration dependence of the experimental activation energies derived from rate-dependent measurements indications can be obtained about the concentration dependence of CSRO. It appears that the regions with a maximum CSRO do not, in general, correspond to the concentrations at which intermetallic compounds occur, nor do they correspond in all cases to regions located around the deepest eutectic composition.     

Quantitative analysis of Bi1−xSbx

The chemical composition of Bi_1-xSb_x alloys is determined by means of square-wave polarography, density measurements, measurements of the electron backscatter coefficient, and electron probe microanalysis. These experimental methods are discussed with respect to their results. At 10 keV, the electron probe microanalysis allows the determination of any antimony concentration without corrections (c_Sb = k_Sb).     

Zur Realstruktur von Ga1–xInxAs LPE-Schichten

Ga_1–xIn_xAs epitaxial layers (0.02 ≦ × ≦ 0.12) are grown on (111)-oriented GaAs substrates from nonstoichiometric melts. The etch pit densities – determined by chemical etching – yield values between 2 · 10⁵ cm⁻² and 3 · 10⁷ cm⁻² and were found to be dependent on composition, layer thickness and cooling rate. X-ray topography of cleaved {110}-planes gives information on layer quality and indicates the existence of stress in the substrate lattice near the heterojunction. The validity of Vegard's law in the investigated concentration range was confirmed by X-ray determination of the lattice constants. The half width of double crystal spectrometer rocking-curves, the epd and the relative intensity of photoluminescence show similar dependence on the composition of the mixed crystal layers.     

Cu1—xAgxInSe2 Solid Solutions

CuInSe₂, AgInSe₂, ternary compounds and Cu_1—xAg_xInSe₂ solid solutions were synthesized by one-temperature method. The composition and structure of indicated materials were established by chemical and X-ray analysis methods, lattice constants, values of σ positional parameter and bond lengths were also calculated. Temperatures of phase transformations were determined by differential thermal analysis (DTA) method and phase diagram of AgInSe₂-CuInSe₂ system was built which is characterized by small crystallization interval and presence of solid state transformations throughout the concentration interval.     

The influence of ambient gas atmosphere on the liquid and solid composition at liquid phase epitaxial growth of GaAs–Alx-Ga1−xAs layers

Epitaxial gallium arsenide and gallium aluminium arsenide layers were grown from gallium solution on chromium-doped semi-insulating gallium arsenide. The effect of residual water concentration in the ambient gas atmosphere on change of aluminium in Al_xGa_1−xAs was determined. It was shown that a water concentration less than 5 ppm is necessary to grow epitaxial layers with high reproducible XAlAs-content and low carrier concentration.     

Mass and bond density measurements for PECVD a-SiCx:H thin films using Fourier transform-infrared spectroscopy

The absolute concentration of chemical bonds in Plasma Enhanced Chemically Vapor Deposited (PECVD) a-SiC_x:H thin films have been determined via combining transmission Fourier-Transform Infra-red (FTIR) spectroscopy with X-ray Reflectivity (XRR) and Rutherford Backscattering (RBS) mass density and composition measurements. Specifically, we demonstrate in this paper that the integrated absorbance for the Si-C stretch in FTIR is linearly proportional to the mass density of PECVD a-SiC_x:H films as determined by XRR and RBS. This linear relationship allows us to accurately determine the IR absorption cross section for the Si-C stretch. Using these cross sections in combination with IR proportionality constants/cross sections published by other researchers, we demonstrate that mass densities in agreement with XRR and RBS can be calculated from the integrated absorbances of the Si-C, Si-H, and C-H stretches in FTIR spectra. From additional mass balance relationships, we further demonstrate that the full elemental and bond concentrations can be determined. This analysis reveals the presence of significant Si-Si and C-C bonding in the a-SiC_x:H films that was not clearly identified in previous FTIR investigations due to the low IR activity for these homopolar bonds. The bond and mass density calculations are demonstrated for both 3C-SiC and a-SiC_x:H thin films with mass density values ranging from 1 to 3.2 g/cm³.     

Germanium Incorporation in Ga1–xInxAs LPE Layers and GaAs Bulk Crystals

Atomic absorption spectroscopy (AAS) is used to determine the Ge concentration in Ga_1–xIn_xAs and GaAs. The orientation dependence of Ge incorporation in (111)A-and (111)B oriented samples has been studied. The distribution coefficients for both the orientations were determined to be k_Ge^(111)A = 2.6 · 10⁻² and k_Ge^(111B = 1.4 · 10⁻² for Ga_1–xIn_xAs with 0 ≦ x ≦ 0.13. The differences between the two orientations are explained with the aid of the band bending model. Doping gradients in thick epitaxial layers and along crystal length of polycristalline TGS-grown GaAs ingots have been investigated too. In Ga_1–xIn_xAs layers any Ge concentration gradient couldn't be observed, but in TGS compact crystals Ge concentration increases with crystal length because the melt composition changes significantly during solidification. The results are compared with those of electrical measurements.     

Influence of the graduated composition region on the properties of GaInAs epitaxial layers grown on GaAs substrates

The electrical properties of Ga_1-xIn_xAs layers (0 < x < 0.3) are investigated. The layers are grown on <111> oriented GaAs substrates. A transition layer is grown with an increasing indium content to decrease the mismatch of the lattice parameters of the substrate and the final layer. A special many-section crucible is used. In dependence on composition the decrease both of mobility and carrier concentration with the increase of compensation is observed. These facts are connected with the introducing of additional acceptors without donor concentration changes.     

Growth and photoluminescence properties of CdS solid solution semiconductor

Photoluminescence (PL) emitted from Cd_1‐xZn_xS and CdS_1‐ySe_y solid solution semiconductor was significantly stronger than PL from the pure CdS and CdSe semiconductor. The samples were prepared using an improved Se‐S‐Na₂S flux route. Photoluminescence in Cd_1‐xZn_xS crystal was brightly yellow at the room temperature under VU radiation. The phase and composition of the solid solution was measured by the XRD and was confirmed by UV‐NIS spectrum as x of 0.3 and y of 0.2. The enhanced photoluminescence was presumably due to the introduction of extra defect (vacancies) by solid solution action and consequently the increasing of luminescence center concentration. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural behavior of CuxZr100−x metallic glass (x = 35−70)

The structural behavior of rapidly quenched amorphous Cu_xZr_100?x alloys was investigated in a wide composition range between 35 and 70 at.% Cu content. High-energy X-ray diffraction patterns, atomic pair correlation functions, mass density and the thermal stability behavior of the alloys all exhibit monotonic changes with composition. Partial pair correlation functions were determined assuming that they remain unchanged in the different amorphous Cu_xZr_100?x alloys and only the weight fractions become altered with changes in composition. The experimental results can be well described by a solid solution-like replacement of Cu and Zr atoms in the whole composition range. No indications are observed neither for the existence of a special atomic arrangement at a particular chemical composition nor for the presence of phase separation in the glassy state of the binary Cu–Zr system.     

Structure and photoelectric behavior of amorphous semiconductors in the system PbSGeSGeS2

A study of the PbS-based vitreous semiconductors: (PbS)_x(GeS)_0.7?x(GeS)_0.3 has been made. The presence of Pb atoms is found to induce structural changes in the network. These semiconductors display chemical ordering which depends upon the relative concentration of the constituent atoms. This property influences the electronic behavior of the semiconductors. For x = 0.23 the composition exhibits different features in its electrical conductivity and photoconductivity, as compared with the other compositions.