RHEED Measurements of AgGaSe2 thin films flash evaporated onto {111} a-GaAs

AgGaSe₂ thin films were prepared by flash evaporation on {111} A-oriented GaAs substrates and investigated by reflection high energy electron diffraction (RHEED). Epitaxial growth takes place in the substrate temperature interval of T_s = 845–920 K. The azimuthal orientation of the deposit on the substrate is discussed, supposing a AgGaSe₂ c/a ratio of 1.82. It is shown that detection of twin formation in the films is possible from RHEED measurements in the <211>-azimuths with respect to the substrate.     

Untersuchung der Volumenstruktur dünner Bi1–xSbx-Schichten

The cross-sectional structure of evaporated Bi_1–xSb_x film has been investigated using electron microscopy and a replica technique. The conditions of film formation were varied by using different hydrocarbon partial pressures. After formation the films were annealed at 150°C. The cross-sectional structure is supposed to be columnary. This is in good agreement with the 〈00.1〉 texture. Grain coarsing during annealing is mainly influenced by the hydrocarbon concentration of the film. The upper part of the film shares most of the hydrocarbons. The correlation between surface- and cross-sectional structure disappeares by formation of an oxid layer.     

High temperature superconducting thin films on CaGdAlO4 substrates

Single crystals of CaGdAlO₄ that have not been used previously as a substrate material for HTSC films were grown by Czochralski method and applied for the deposition of the Bi₂Sr₂CaCu₂O_8−x and LuBa₂Cu₃O_7−z thin films. The main advantages of the CaGdAlO₄ crystals are sufficiently low dielectric constant, appropriate crystal lattice match with most HTSC, fairly high crystal perfection and reproducibility of the growth process. Bi₂Sr₂CaCu₂O_8−x films were prepared by “off-axis” DC magnetron sputtering and LuBa₂Cu₃O_7−z films were obtained by flash evaporation MOCVD technique on the (0 0 1) oriented CaGdAlO₄ substrates.     

Influence of Bi1−xSbx and Sb overlayers on the annealing behaviour of Ag films

Annealing of thin Ag films covered by Bi_1−xSb_x (x = 0.09) and Sb overlayers, respectively, has been investigated by measuring the electrical resistance. Material exchange by diffusion leading to the formation of an intermetallic phase between Ag and Sb was found to be mainly responsible for the annealing effects. By X-ray and electron diffraction the intermetallic compound has been identified as the ε-phase Ag₃Sb. The diffusion processes due to annealing were studied by SIMS. A correlation between the measured resistance and electron micrographs of the cross-sectional film structure was found.     

Tin diselenide quantum-sized island films

Island films based on the intermediate phases forming in Ge-Se and Sn-Se systems are prepared by the incongruent evaporation of film structures of a Sn_{1 − x} Se _x composition. The surface morphology of these structures is studied by atomic force microscopy (AFM). The effect of growth conditions on the size distribution of islands is established.     

Influence of source composition on the properties of flash-evaporated thin films in the Cu–In–Se system

Using CuIn₂Se_3.5 as source material epitaxial layers are obtained on (111)A- und (100)-oriented GaAs substrates by flash evaporation in the substrate temperature range T_sub = 720—870 K. The composition of the films is between CuInSe₂ and CuIn₂Se_3.5. The structural properties of the films are similar to those for CuInSe₂ epitaxial layers and refer to a chalcopyrite-like structure. The films are always p-type conducting but different acceptor states are found in dependence on the substrate temperature.     

Structural and electrical properties of CuGaSe2 thin films on GaAs substrates

CuGaSe₂ thin films with thicknesses in the range of 0.1 μm were deposited onto semiinsulating (111) A-oriented GaAs substrates by flash evaporation under controlled growth conditions. Epitaxial growth begins at a substrate temperature of T_sub = 835 K. Besides the chalcopyrite phase a hexagonal modification was observed in the range T_sub = 835 to 855 K. At T_sub ≧ 860 K the films have sphalerite structure. All epitaxial films were p-type conducting. Two acceptor levels with ionization energies of about 150 meV and 550 meV, respectively, were obtained from an analysis of electrical and photoluminescence measurements.     

Structure and features of the surface morphology of <Emphasis Type="Italic">A</Emphasis><Superscript>4</Superscript><Emphasis Type="Italic">B</Emphasis><Superscript>6</Superscript> chalcogenide epitaxial films

The structure and features of the surface morphology of Pb_{1 − x} Mn _x Se (x = 0.03) epitaxial films grown on freshly cleaved BaF₂(111) faces and PbSe_{1 − x} S _x (100) (x = 0.12) single-crystal wafers were investigated by molecular beam condensation and the hot-wall method. It is shown that the epitaxial films, in accordance with the data in the literature for other chalcogenides, grow in the (111) and (100) planes, repeating the substrate orientation. Black aggregates are observed on the film surface of the films grown. The results obtained are compared with the data in the literature and generalized for other chalcogenides: A ⁴ B ⁶:Pb (S, Se, Te); Pb_{1 − x} Sn _x (S, Se, Te); and Pb_{1 − x} Mn (Se, Te). It is established that the formation of black aggregates, which are second-phase inclusions on the surface of epitaxial films obtained by vacuum thermal deposition, is characteristic of narrow-gap A ⁴ B ⁶ chalcogenides.     

Characterization of nanocrystals in laser condensates deposited through vanadium evaporation in an oxygen atmosphere

The influence of the substrate temperature T _sub (20–360°C) and the oxygen pressure P(O₂) (5 × 10⁻³−0.13 Pa) in an evaporation chamber on the structure and phase composition of films prepared through laser sputtering of a vanadium target is investigated by electron diffraction and in situ transmission electron microscopy (with the use of the bend extinction contour technique for determining the bending of the crystal lattice). It is demonstrated that the oxygen content in the films increases with an increase in the oxygen pressure P(O₂) at a fixed substrate temperature T _sub and decreases with an increase in the substrate temperature T _sub at a fixed oxygen pressure P(O₂). The conditions responsible for the formation and composition of the crystalline (VO_0.9) and amorphous (V₂O₃) phases in the films are determined. It is established that the phase composition of the film depends on the angle of condensation of the vapor-plasma flow. The crystallization of the V₂O₃ amorphous phase is accompanied by an increase in the density by 9.2%. It is revealed that the V₂O₃ spherulites growing in the amorphous film have a bent crystal lattice. The bending of the crystal lattice can be as large as ∼42 deg/μm.

     

SiOx films prepared using RF magnetron sputtering with a SiO target

In this study, SiO_x thin films were prepared using reactive radio frequency magnetron sputtering at room temperature with a SiO sintered target. The obtained SiO_x films were identified using X-ray diffraction, transmission electron microscopy, infrared absorption spectroscopy, X-ray photoelectron spectroscopy and ultraviolet-visible transmittance measurement. The x in SiO_x film was controlled from 0.98 to 1.70 by changing the oxygen flow ratio at deposition. Increasing the oxygen flow ratio increased the optical gap of the SiO_x films from 3.7 to greater than 6 eV.     

Thermally stimulated relaxation of misfit strains in Si<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript>x</Subscript>/Si(100) heterostructures with different buffer layers

The regularities of the defect formation in Si_1−x Ge_x/Si heterostructures (x = 0.15 and 0.30), consisting of a low-temperature Si buffer layer and a SiGe solid solution, during their growth and subsequent annealings at temperatures 550–650°C are investigated by the methods of optical and transmission electron microscopy and X-ray diffraction. It is shown that the misfit-strain relaxation by plastic deformation under the conditions studied occurs most intensively in heterostructures with low-temperature SiGe buffer layers. The maximum degree of misfit-strain relaxation (no higher than 45%) is observed in the heterostructures with x = 0.30 after annealing at 650°C. The results obtained are explained by the effect of the nature and concentration of dislocation-nucleation centers, existing in low-temperature buffer layers, on the characteristics of the formation of a dislocation structure in the heterostructures under consideration.     

Epitaxial layers of CuGaTe2 on GaAs

CuGaTe₂ thin films with thicknesses in the range from 0.1 to 0.2 μm were deposited onto semi-insulating (111) A-oriented GaAs substrates by flash evaporation under controlled growth conditions. Epitaxial growth begins at a substrate temperature of T_sub = 695 K. In the range T_sub = 695 … 820 K the films have the chalcopyrite structure, at T_sub = 820 to 840 K a second phase was observed besides the chalcopyrite phase. At T_sub > 840 K the films become polycrystalline. All epitaxial films were p-type conducting and showed an increase of the hole concentration with rising substrate temperature. The measured mobilities indicate to the presence of a high concentration of neutral impurities or defects.     

Study of InxGa1–xP/GaAs Films Formation on the Basis of In–Ga–P Liquidus Precised Investigation

It is shown that the In–Ga–P melt which is prepared by contacting with the GaP seed becomes supersaturated in reality. Some peculiarities of In_xGa_1–xP/GaAs films formation at quasi-equilibrium conditions are described. It is observed that the saturated In–Ga–P melt dissolves the GaAs substrate when isothermally contacting if the In_xGa_1–xP equilibrium solid has the lattice parameter less than that of GaAs. As a result some InGaAsp deposit arises on the substrate. This phenomenon takes place if the In–Ga–P melt is just supercooled. This instability of the liquid-solid interface is explained on the basis of the relaxation theory of non-equilibrium liquid-solid contact which has been created by the author in previous papers.     

Electrical and optical properties of Cd1−xZnxS (0x0.18) grown by chemical bath deposition

Cd_1−xZn_xS films with 0x0.18 were grown by chemical bath deposition technique on glass substrates from an aqueous solution containing cadmium and zinc sulfate, ammonia and thiourea. Microstructural features, obtained from X-ray diffraction and scanning electron microscopy (SEM) measurements, reveal a predominance of Wurtzite structure and an homogenous microstructure formed by densely microcrystallines for all the samples studied. Cd_1−xZn_xS semiconductor was found to be resistive and of n-type. Also, the electron density decreases with increased x and the mobility reaches a maximum around x=0.12. Which means that the Cd_1−xZn_xS films at this composition are of high crystalline quality, i.e. having reduced intrinsic defect concentrations.     

Scandium thin films-structure and electrical resistance (I). A study on films obtained in a vacuum of 10−5 up to 10−6 Torr

A structure as well as a specific electrical resistance of scandium films having a various thickness (300 up to 2800 Å) obtained at a condensation rate: w⋍ 1 up to 155 Å/s have been studied in the present work. Depending on condensation conditions in films a hydride ScH_x, h.c.p. — Sc, or ScH_x + Sc alternatively, is formed, a phase containing a distorted hexagonal lattice evolving into the ScH_x over a period of a few hours. The ScH_x and h.c.p-Sc change to Sc₂O₃ when annealed in a vacuum of 5 · 10⁻⁵ Torr at a T ≈ 800°C, while in a vacuum of 3 · 10⁻⁸ Torr a change to h.c.p.-Sc with negligible inclusions of oxidic Sc₂O₃ particles takes place. Formation of oxide is observed also when heating the films with an electron beam directly in a microscope under vacuum of ∼ 8 · 10⁻⁵ Torr. The specific electrical resistance ϱ of the film just after a condensation has taken place is approximatly by an order higher as against the ScH_x- and h.c.p.-Sc solid specimens. An irreversible gain in said resistance is observed while holding at a room temperature or annealing in a vacuum of 5 · 10⁻⁵ Torr, this being associated with absorption of H₂, O₂ and, possibly, of water steam, and then with formation of Sc₂O₃. Annealing in a vacuum of 5 · 10⁻⁸ up to 10⁻⁷ Torr involves a temperature relationship for ϱ of an intricated nature, this being accounted for by a structure transition as follows: A diode-effect diminishing with a temperature rise is observed in annealed films.     

Spectroscopic ellipsometry studies of reactively sputtered nitrogen-rich GaAsN films

Nitrogen-rich GaAsN thin films have been deposited at 500 °C by reactive rf sputtering of GaAs target in argon-nitrogen atmosphere. The arsenic content of the films was varied by changing the nitrogen percentage in the sputtering atmosphere and the As/Ga ratio in the films was estimated by X-ray fluorescence measurements. Spectroscopic ellipsometry measurements have been carried out on these films and the measured ellispometric spectra were fitted with theoretical spectra generated by using suitable model sample structures. From the best fit parameters of the dispersion model, band-gap values and variation of refractive index and extinction coefficient as a function of wavelength have been obtained for films deposited with different percentages of nitrogen in the sputtering atmosphere. The films deposited with 12% to 100% nitrogen in the sputtering atmosphere, which are of hexagonal GaN, exhibit GaN-like optical properties, though effects due to excess arsenic in amorphous phase are seen in the films deposited with less than 40% nitrogen. The films deposited with 5% to 12% nitrogen in sputtering atmosphere are dominantly polycrystalline GaAs_xN_1−x (x ≈ 0.01 to 0.08) and exhibit variations in optical parameters, which are consistent with their structure and composition. The films deposited with less than 5% nitrogen in sputtering atmosphere are arsenic-rich and amorphous.     

Glass formation in the GexTe100−x binary system: Synthesis by twin roller quenching and co-thermal evaporation techniques

The Ge–Te system exhibits one main composition domain where glasses can be easily prepared by melt quenching technique; this domain is centered on the eutectic composition Ge₁₅Te₈₅. In this work, bulk flakes and films of composition Ge_xTe_100−x with x  50 at.% were prepared by two different quenching techniques: (i) the twin roller quenching for bulk flakes and, (ii) the co-thermal evaporation for films (with thickness comprised between 2 and 14 μm). Electron Probe Micro-Analysis was used to check the composition of the materials while X-ray diffraction allowed identifying the amorphous state and/or the crystalline phases present in the Ge_xTe_100−x samples. Thermal properties for both types of materials were investigated by differential scanning calorimetry. The glass-forming regions were: 11.7–22.0 at.% Ge for bulk flakes and 10.2–35.9 at.% Ge for films. A similar thermal behavior of bulk flakes and thick films was highlighted by Differential Scanning Calorimetry.     

Influence of Substrate Surface Polarity on Epitaxial Layer Growth of CuInSe2 on GaAs

CuInSe₂ thin films with thicknesses of about 0.1 μm were deposited onto (III) B-oriented GaAs substrates by flash evaporation. At substrate temperatures T_sub = 695–820 K the films have the chalcopprite structure with some admixture of the cubic sphalerite phase. At T_sub > 820 K only the sphalerite phase was found All the films are partly polycrystalline. From the electrical properties it follows that the films are characterized by nearly complete compensation at T_sub = 695–820 K. At T_sub = 870 K the films are p-type conducting and show two acceptor states with ionization energies of about 8 meV and 105 meV.     

Growth and study of antimony selenide island films

Nanosized Sb₂Se₃ island films are prepared by the incongruent evaporation of Sb_{1 ? x} Se _x (x = 0.9 at fractions) thin films. The surface morphology of the structures is investigated by optical and atomic force microscopy (AFM). It is shown that an increase in the evaporation temperature leads to a decrease in the surface density of islands.     

Thermoelectric Power of Polycrystalline Sb2Te3 Films

Polycrystalline stochiometric films of Sb₂Te₃ with different thickness were prepared on glass substrates by a flash evaporation technique at constant substrate temperature of 423 K. The thermoelectric power of these films was determined by measuring integrally the developed thermo — e.m.f. at different temperature differences between the hot and cold ends. The thermoelectric power of Sb₂Te₃ films was determined as a function of the temperature and thickness of the films. It was found that the Fermi level becomes pinned at higher temperatures. The values of γ, E₀, and A parameters were determined as functions of the thickness of the films. The dependence of the thermoelectric power on the reciprocal thickness of the films was explained on the basis of the grain size effect.