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In this paper the defect structure of CdS crystals doped with Cu, Se and Zn atoms has been investigated. There were used two X-ray methods: the oscillating slit and oscillating film methods. CdS crystals were obtained from the melt under pressure of Se and Zn 0.5, 0.75, 1% wt and Cu 0.25, 0.5, 0.75, 1% wt in relation to CdS crystals. It was proved that high doping damages the structure of CdS crystals and that especially Cu impurity much more disturbs the crystal lattice than Zn one. Se atoms cause rather small deformation of crystal and increase the lattice constant, this being connected with decreasing of energy gap. 相似文献
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GaAs单晶是当前光电子器件的主要衬底材料之一,在红外LED中有着重要应用。但杂质浓度高、迁移率低等缺点会严重影响红外LED器件性能。为生产出低杂质浓度、高迁移率、载流子分布均匀、高利用率的红外LED用掺硅垂直梯度凝固(VGF)法GaAs单晶,本文研究了热场分布、合成舟和炉膛材质、工艺参数对单晶的成晶质量、杂质浓度、迁移率、载流子分布的影响。利用CGSim软件对单晶生长热场系统进行数值模拟研究,温区一至温区六长度比例为8∶12∶9∶5∶5∶7时,恒温区达到最长,位错密度达到1 000 cm-2以下,成晶率达到85%。采用打毛石英合成舟进行GaAs合成,用莫来石炉膛替代石英炉膛,可以获得迁移率整体高于3 000 cm2/(V·s)的GaAs单晶,满足红外LED使用要求。对单晶生长工艺参数展开研究,采用提高头部生长速度、降低尾部生长速度的方式提高单晶轴向载流子浓度均匀性,头尾部载流子浓度差降低33%,尾部迁移率从2 900 cm2/(V·s)提高到3 560 cm2/(V·s)。单晶有效利用长度提高33... 相似文献
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Thin single crystals of pure Ag, its dilute alloys, Ni – 10 ˜ 60 wt.% Co and Fe – 35 wt.% Ni alloys were grown by the Bridgman method. A preference of growth directions of these crystals changes from the <111>direction towards <100>with increasing growth rate or alloying effect. These results are discussed from a characteristic of nucleus interfaces. 相似文献
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有机半导体单晶由于具有内部长程有序的分子排列结构、缺陷及晶界少等优点,表现出优异的光电性能,是实现有机半导体器件实用化的一种重要材料。目前,研究者们已经发展出多种可应用于有机单晶的生长方法,其中,微距升华法是一种可以在大气环境下采用蒸镀的方式制备有机微/纳单晶的方法。然而,当将这种方法应用于C8-BTBT时发现,由于分子的熔点较低,蒸镀得到的是分子直接从液态凝固为无定形/多晶的结构。在本工作中,通过使用溶剂蒸汽退火的方式对其进行后处理,成功地将这种无定形/多晶结构转化为分立的单晶。为了表征所得到的晶体形貌和结构,分别使用光学显微镜、X射线衍射和原子力显微镜等仪器对其进行了表征,发现所制备的晶体结构具备单晶的典型特征。 相似文献
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Nd3+:YCOB单晶是在激光调制技术上具有重要应用价值的自倍频光学材料.采用高温固相反应合成Nd3+∶YCOB多晶粉体,再通过垂直区熔处理制备出高纯度Nd3+∶YCOB晶粒料,采用坩埚下降法生长出1mol;、2mol;和5mo1; Nd3+掺杂比例的系列Nd3+∶ YCOB单晶.测试表征了所生长单晶试样的光谱性能,包括吸收光谱、荧光光谱和荧光衰减时间.在808 nm红外光源激发下,Nd3+∶YCOB单晶显示出中心波长1064 nm的强荧光发射,其荧光寿命为157~162μs,证实1064 nm强荧光发射随Nd3+掺杂浓度加大而明显增强. 相似文献
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Haiping Xia Xianlin Zeng Jinhao Wang Jianli Zhang Jian Xu Yuepin Zhang Qiuhua Nie 《Crystal Research and Technology》2004,39(4):337-342
The optical absorption spectra of LiNbO3 (LN), Fe:LiNbO3 (Fe:LN), and Zn:Fe:LiNbO3 (Zn:Fe:LN) single crystals grown by Bridgman method were measured and compared. The absorption characteristics of the samples and the effects of growth process conditions on the absorption spectra were investigated. The Fe, Zn and Li concentrations in the crystals were analyzed by inductively coupled plasma (ICP) spectrometry. The results indicated that the overall Fe ion and Fe2+ concentration in Fe:LN and Zn:Fe:LN crystals increased along the growing direction. The incorporation of ZnO in Fe:LN crystal induced increase of Fe2+ in the crystal. Among Fe‐doped and Zn:Fe‐codoped LN single crystals, 3 mol% ZnO doped Fe:LN had a biggest change of Fe2+ ion concentration from bottom to top part of crystal. The effects of technical conditions (atmosphere and thermal history) on Fe2+ ion concentration were discussed. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
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Qiong Wu Hua Tang Changsheng Li Xiaofei Yang Haojie Song Kangmin Chen 《Crystal Research and Technology》2011,46(2):178-182
Hexagonal titanium silicon carbide (Ti3SiC2) crystals were prepared by vacuum sintering of Ti, Si, and C powders at 1300 °C. The microstructure and grain deformations of Ti3SiC2 were examined by scanning electron microscopy and transmission electron microscopy. The tribological properties of hexagonal Ti3SiC2 crystals as lubrication additive in HVI500 base oil were investigated by a UMT‐2 ball‐on‐plate friction and wear tester. The Ti3SiC2 additives exhibited good friction reduction. Under determinate conditions, the friction coefficient of base oil containing Ti3SiC2 crystals is lower than that of pure base oil. The base oil with 3.0 wt.% hexagonal Ti3SiC2 crystals presented good anti‐wear capability. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
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V. I. Voronkova I. N. Leont’eva N. I. Sorokina T. I. Ovsetsina I. A. Verin 《Crystallography Reports》2006,51(6):977-981
A series of iron-doped KTiOPO4 (KTP: Fe) single crystals in which iron substitutes for 0.1–0.3% titanium was grown. The structure of the KTP: Fe crystals was determined, and their dielectric and conducting properties were studied. An X-ray diffraction analysis failed to reveal such asmall amount of Fe+3 ions in titanium octahedral positions of the structure. It was found that an increase in the iron concentration results in a lowering of the symmetry of Ti(1)O6 and Ti(2)O6 octahedra. The splitting of the dielectric anomaly due to the ferroelectric phase transition was explained by the mechanism of incorporation of an impurity into different growth pyramids of the crystals. It was established that the aging of the KTP: Fe crystals leads to changes in the permittivity and electrical conductivity during long storage. 相似文献
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Zn:Mn:Fe:LiNbO3 crystals were prepared by Czochralski technique. Its microstructure was measured and analyzed by UV‐Vis absorption spectra. The optical damage resistance of Zn:Mn:Fe:LiNbO3 crystals was characterized by the transmitted beam pattern distortion method. It increases remarkably when the concentration of ZnO is over a threshold concentration. Its value in Zn(7.0 mol%):Mn:Fe:LiNbO3 crystal is about three orders of magnitude higher that in the Mn:Fe:LiNbO3 crystal. The dependence of the defects on the optical damage resistance was discussed. The non‐volatile holographic storage was realized in all crystals, and the sensitivity of the Zn(7.0 mol%):Mn:Fe:LiNbO3 crystal is much higher than that of others. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
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It is possible to determine the Debye-temperature from measurements of the absolute integral X-ray intensities of silicon single crystals. Debye-temperatures of 543 to 533 K were found for a dislocation-free silicon crystal for temperatures between 90 and 296 K. The effect of dislocations on the Debye-temperature in silicon was investigated for various temperatures. 相似文献
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单晶炉是一种在以高纯氩气为主的惰性气体环境中,用石墨热场加热,将多晶硅材料加以熔化,用直拉法生长单晶硅的设备,在太阳能单晶硅拉制的过程中,如何提高拉晶的速度和质量以及降低设备的能耗一直是单晶硅厂家永恒的追求。本文从机械结构的角度分析了坩埚上升在单晶炉拉晶过程中所造成的拉晶速度下降和额外能耗问题,在此问题的基础上提出了一种加热器随坩埚在拉晶过程中上升的单晶炉结构优化方法,并通过有限元仿真对单晶炉优化前后晶体和熔体的热场以及拉晶过程中加热器功率进行分析。结果表明,改进后的单晶炉不仅可以提高拉晶过程的稳定性和拉晶速度,从而进一步提高单晶炉的拉晶质量和产量,而且还能有效降低单晶炉拉晶的能耗。 相似文献
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A system of coupled mathematical models and the corresponding program package is developed to study the interface shape, heat transfer, thermal stresses, fluid flow as well as the transient dopant segregation in the floating zone (FZ) growth of large silicon crystals (diameter more than 100mm) grown by the needle-eye technique. The floating zone method with needle-eye technique is used to produce high-purity silicon single crystals for semiconductor devices to overcome the problems resulting from the use of crucibles. The high frequency electric current induced by the pancake induction coil, the temperature gradients and the feed/crystal rotation determine the free surface shape of the molten zone and cause the fluid motion. The quality of the growing crystal depends on the shape of the growth interface, the temperature gradients and corresponding thermal stresses in the single crystal, the fluid flow, and especially on the dopant segregation near the growth interface. From the calculated transient dopant concentration fields in the molten zone the macroscopic and microscopic resistivity distribution in the single crystal is derived. The numerical results of the resistivity distributions are compared with the resistivity distributions measured in the grown crystal. 相似文献
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G. M. Kuz’micheva O. Zaharko E. A. Tyunina V. B. Rybakov I. A. Kaurova E. N. Domoroshchina A. B. Dubovsky 《Crystallography Reports》2009,54(2):279-282
Langatate crystals of the general composition La3(Ga0.5Ta0.5)Ga5O14, grown by the Czochralski method, have been investigated by neutron diffraction (single crystals) and X-ray diffraction (ground single crystals). The crystals were grown in an atmosphere of 99% Ar + 1% O2 in the Y54° direction (rotation by 54° with respect to the y axis), without subsequent annealing (orange crystal) or with vacuum annealing (colorless crystal). It is established that colorless crystals have a higher gallium content and, therefore, a larger number of oxygen vacancies in comparison with colored crystals; this is a possible reason for their lower microhardness. 相似文献
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作为一种铁基超导薄膜,Fe(Se,Te)薄膜具有晶体结构简单、所包含的元素较少、易于合成的特点,不仅有利于超导机理研究而且有着潜在的技术应用价值。本文通过磁控溅射在温度为320 ℃的CaF2单晶衬底上制备了Fe(Se,Te)薄膜,并在氩气氛围下进行了退火处理。研究了退火时间对Fe(Se,Te)薄膜的晶体结构、微观形貌、成分组成以及电输运特性的影响。结果表明:Fe(Se,Te)薄膜的结晶性较好,退火有助于消除薄膜样品中的FeSe相,薄膜的晶格常数c对退火不敏感,退火后薄膜晶粒尺寸变大;Fe(Se,Te)薄膜成分与靶材的名义组分存在一定的偏差,退火时间越长,Fe(Se,Te)薄膜表面的颗粒越密集;Fe(Se,Te)薄膜的电阻随温度升高而减小,呈现出半导体特性,退火3 h后电阻明显增大。 相似文献
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Haruo Itoh Tadashi Saitoh Nobuo Nakamura Sunao Matsubara Terunori Warabisako Takashi Tokuyama 《Journal of Crystal Growth》1978
The structural and electrical properties of silicon layers epitaxially grown on metallurgical-grade polycrystalline silicon substrates are examined to clarify the effect of grain boundaries, crystal defects and impurities in the substrates. Chemical etching of the epitaxial layer reveals that all the grain boundaries continue from the substrate into the epitaxial layer, whereas lines of high density etch pits do not always continue. The polycrystalline thin film solar cells are fabricated on the metallurgical-grade silicon substrates by successive deposition of p and n+ layers. These cells show short circuit current densities around 70% of that of the conventional single crystal cell. This reduction of the short circuit current is caused mainly by the short minority carrier diffusion length in the grains probably due to impurities involved in the epitaxial layers. The origins of such impurities are discussed by considering autodoping and solid-state diffusion from the substrate during growth of epitaxial layers. 相似文献
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Complex studies of the optical and structural properties and the elemental composition of a series of yttrium iron garnets (YIG) grown from flux have been performed with due regard for the crystallographic orientation of the platelets. It has been established that the presence of Mn, Ba, and V microimpurity ions at a level of a few thousandths of a percent can play a stabilizing role in the synthesis of perfect crystals with the garnet structure. The criterion of the quality of the grown crystals is formulated as the ratio of the total number of Y and Fe cations to the number of oxygen anions (in wt %). 相似文献
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Beltyukov A. N. Gil’mutdinov F. Z. Valeev R. G. El’kin I. A. Starchikov S. S. Muslimov A. E. Kanevsky V. M. 《Crystallography Reports》2018,63(6):989-993
Crystallography Reports - The formation of graphene–iron composite structures on the surface of cleavages of silicon carbide single crystals using vacuum thermal destruction with simultaneous... 相似文献
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A. A. Kaloyan S. A. Tikhomirov K. M. Podurets V. A. Maisheev Yu. E. Sandomirskiy Yu. A. Chesnokov 《Crystallography Reports》2017,62(3):370-373
Currently, bent silicon single crystals are used at large accelerators to extract and collimate proton beams. A device for multiple deflection of a proton beam based on several bent silicon strips operating in the volume reflection mode has recently been developed. In this device, the bending of silicon strips successively located on the surface of a thick plate is implemented due to the internal stress induced by grooves mechanically formed on the crystal surface (Twyman effect). Topography based on angular scanning and synchrotron radiation was applied to measure the bending of individual deflector strips and the crystal as a whole. The measurement results are compared with the data obtained with a proton beam. 相似文献