Anwendung der Protonen-Rückstreuanalyse zur Bestimmung der Zusammensetzung von AIIIBV-Mischkristallen

Spectra of 1.5 MeV protons elastically scattered from A^IIIB^V mixed crystals are analysed for the determination of the composition of the samples. A brief outline of the method of microanalysis by backscattering spectrometry is given and its application is discussed in detail by two examples. The results of the measurements show good agreement with those obtained through other analytic procedures. The appendix treats the mass and depth resolution of the backscattering technique described before.     

Zum Wachstum von AIIIBV-Halbleitern aus nichtstöchiometrischen Schmelzen (II) Dotierung von GaAs und Ga1−xAlxAs mit Zink

Doping of GaAs and Ga_1−xAl_xAs with Zn in the LPE process was studied by a radioanalytical method. It is found that Zn diffuses from the Ga-(Al)-As-Zn-solution into the n-GaAs substrate before epitaxial growth starts. This “pre-diffusion” and the following diffusion of Zn out of the epitaxial layer into the substrate results in three regions with distinct Zn-graduation in the vicinity of the pn-junction. There are no striking differences for GaAs/GaAs and Ga_1−xAl_xAs/GaAs structures. The Zn concentration in GaAs epitaxial layers decreases exponentially from the substrate up to the layer surface. From this profile the temperature dependence of the Zn segregation coefficient is calculated. At 900°C a value k_eff = 5,2 · 10⁻² is found. The doping profile in Ga_1−xAl/As layers is more complex. It is influenced by the changings of temperature during the growth of the layer and by the nonuniform Aldistribution over the layer thickness.     

Bestimmung der Energielücke von (Pb1–x*Snx)1–yTe y-Einkristallen. Vergleich indirekter mit direkten Methoden

For applications of Pb_1–xSn_xTe in infrared light emitting and light detecting devices it is necessary to control the energy gap. For determining the gap in as-grown Bridgman crystals indirect methods have to be used (measurement of lattice constant and density). The results of these indirect methods are compared with results obtained by more direct measurements (spectral photoresponse, intrinsic absorption edge).     

Quantitative Elektronenstrahlmikroanalyse und Zyklotronresonanzmessungen an Wismut-Antimon (Bi1−xSbx)

For the investigation of the electronic properties of bismuth-antimony single crystals the analysis of their chemical composition is important. For this te Electron Microprobe Analysis is a suitable method. In general the quantitative Elektron Microprobe Analysis requires to take into account various influences. This is possible by correcting calculations on the basis of theoretical models. For the reproducibility and the comparability of analytical results information is necessary on conditions of measurement and on theoretical corrections. In this paper an investigation is made, under which conditions in the analysis of bismuth-rich bismuth-antimony alloys the correction can be neglected. The successful utilization of the Electron Microprobe Analysis for the investigation of the dependence of the band structure of Bi_1−xSb_x on the antimony concentration x is shown by the example of the measurements of cyclotron resonance.     

Calculations of homogeneous region in Ga1−xAlxAs and GaAs1−xPx ternary solid solutions

Ternary solid solutions of A^IIIB^V compounds are considered as pseudobinary A(x)^IIIB(x)^v compounds, where the behaviour of A(x)^III and B(x)^v pseudoatoms is quite similar to A^III and B^v atoms in a binary A^IIIB^v crystal. Weak dependence of point defect contribution into Gibb's energy of A^IIIB^v crystal on its defect nature, random character of ternary solid solutions of A^IIIB^v compounds allow to use already for binary compounds developed formalism in the determination of component thermodynamic potentials of solid solution. Basing on literature data for the equilibrium solidus of AlAs the approximation for the temperature dependence of thermodynamic potential of an AB quasimolecule in A^IIIB^v crystal is revised. This result together with the well-known parameters for the equilibrium liquidus in Ga–P, Ga–As, and Al–As systems were used for calculations of the nonstoichiometric factor at the boundary of a homogeneous region in Ga_1−xAl_xAs and GaAs_1−xP_x ternary solid solutions. The results are compared with the known literature data.     

Über die Bestimmung von Dotierungsprofilen in pnp-Siliziumhalbleitern mit der Elektronenstrahlmikrosonde

Everhart a. o. described a sentitive method of observing pn-junctions in semiconductor devices. When a semiconductor is bombarded by high energy electrons, electron hole pairs are generated within the bulk material. If the minority carriers cross the pn-junction before recombining, an electron beam induced signal (EBIC-signal) results with the maximum at the deplation region. If the charge carrier are generated in a distance larger than a few diffusion lengths from the junction, recombination will occur with little or no contribution to the output signal. At first a theoretical interpretation is given of the connection between the distribution of the space charge and an inverse voltage in the deplation layer of barrier in dependence on impurity density. It is followed by a mathematical method for careful analysis of the slopes and the amplitude of the EBIC-signal. The results were compared with the theorie. So it is possible to obtain informations on the profile of impurity density in the specimen. The use of the scanning technique with brightness modulation by the EBIC-signal allowed the demonstration of inhomogeneities in the diffusion front.     

Quantitative analysis of Bi1−xSbx

The chemical composition of Bi_1-xSb_x alloys is determined by means of square-wave polarography, density measurements, measurements of the electron backscatter coefficient, and electron probe microanalysis. These experimental methods are discussed with respect to their results. At 10 keV, the electron probe microanalysis allows the determination of any antimony concentration without corrections (c_Sb = k_Sb).     

Liquidphasen-Epitaxie von Si-dotiertem AlxGa1−xAs

The liquidus and solidus isotherms of the quaternary phase diagram Ga—Al—As–Si have been estimated at 850 °C and N_Si = 0.04 and 0.1. Epitaxial layers were grown and the influence of silicon on the growth rate was investigated. Hall-effect measurements give informations on the dependence of the carrier concentration on the silicon content in the melt. The donor ionization energies vary from 32 to 69 meV and are diminished proportional to N.     

Zur Realstruktur von Ga1–xInxAs LPE-Schichten

Ga_1–xIn_xAs epitaxial layers (0.02 ≦ × ≦ 0.12) are grown on (111)-oriented GaAs substrates from nonstoichiometric melts. The etch pit densities – determined by chemical etching – yield values between 2 · 10⁵ cm⁻² and 3 · 10⁷ cm⁻² and were found to be dependent on composition, layer thickness and cooling rate. X-ray topography of cleaved {110}-planes gives information on layer quality and indicates the existence of stress in the substrate lattice near the heterojunction. The validity of Vegard's law in the investigated concentration range was confirmed by X-ray determination of the lattice constants. The half width of double crystal spectrometer rocking-curves, the epd and the relative intensity of photoluminescence show similar dependence on the composition of the mixed crystal layers.     

Bildung und Untersuchung von SixAl1−xAs-Kristallen

Si_xAl_1−xAs is formed by chemical transport reaction of AlAs using iodine as transporting agent. The experiments are performed in sealed silica tubes in the temperature range from 900 to 1000°C. The grown platelet-shaped crystals and whiskers are investigated with x-ray diffraction, light microscopy, electron microscopy and electron-probe microanalysis. The mechanism of growth is discussed.     

Homogenitätsuntersuchungen und Bestimmung der molaren Konzentration x an CdxHg1–xTe mit Hilfe der Elektronenstrahlmikrosonde

The semiconductor Cd_xHg_1–xTe serves as a starting material for the production of infrared detectors with a high detectivity and a small time constant. Cd_xHg_1–xTe single crystals are necessary to manufacture detectors efficiently. The single crystals should not contain segregations and have to include a homogeneous molar concentration x. An electron microprobe X-ray analyzer meets all requirements expected from the measuring method for checking the homogeneity of Cd_xHg_1–xTe crystals. — Results of qualitative and quantitative studies in the microscopical and macroscopical range are presented. Typical defects of the crystals were detected by using the qualitative electron microprobe X-ray analysis. The quantitative analysis was carried out with standard samples. The method for determination of the molar concentration x of the standard samples is described.     

Spektrochemische Bestimmung von Silizium in AlxGa1–xAs und physikalische Eigenschaften der Kristalle

A direct spectrochemical method for the quantitative determination of silicon in Al_xGa_1–xAs (x ≈ 0,8) crystals was elaborated. The results of the analysis of highly doped samples (10¹⁹ … 10²⁰ cm⁻³) were discussed in connection with photoluminescence spectra and electrical measurements.     

Magnetic properties of the CrSxTe1−x (x = 0−0.2) solid solutions

On the basis of X-ray, magnetic and neutron diffraction measurements the range of solubility in the CrS_xTe_1−x (x = 0−0.2) system has been established and the magnetic phase diagram of the system has been plotted. The decrease of magnetization at low temperature and the additional reflections in the neutron diffraction patterns are associated with the formation of noncollinear magnetic structure which is characterized by the antiferromagnetic component of the magnetic moments. This component has the orthorhombic unit cell with \documentclass{article}\pagestyle{empty}\begin{document}$ a_M = \sqrt {3a_0 } $\end{document}, b_M = a₀, c_M = c₀. The character of the exchange interactions giving rise to this magnetic structure is discussed.     

Investigation of GaAs—InyGa1−yPzAs1−z–InxGa1−x-As grading heterojunctions formation

The initial stages of growth of GaAs–InGaAsP_var–In_xGa_1−xAs heterostructures (x = 0.1 and 0.17) were investigated for the equilibrium-cooling method of LPE growth. Similar investigations were carried out for GaAs–InGaAsP_var–In_0.05Ga_0.95As heterocompositions, but for the step-cooling technique. The scheme of growing of In_0.17Ga_0.83As films of GaAs substrates with several intermediate buffler InGaAsP_var layers is represented. These heterostructures were shown to have less than 10⁶ cm⁻² dislocation density on the overall area of the film (> 2 cm²).     

Bestimmung der optimalen Erstarrungsbedingungen bei der Einkristallzüchtung von Aluminium-Zink-Legierungen

The present paper concerns the preparation of AlZn alloy single crystals (0–30% wt.Zn) by Bridgman method. It is shown that the calculated conditions of solidification, under which the constitutional supercooling should be eliminated, coincide with the optimal conditions for the growth of relatively homogeneous single crystals.