共查询到17条相似文献,搜索用时 140 毫秒
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采用光学方法确定InAs/GaAs单量子点在样品外延面上的位置坐标, 利用AlAs牺牲层把含有量子点的GaAs层剥离并放置在含有金纳米颗粒或平整金膜上, 研究量子点周围环境不同对量子点自发辐射寿命及发光提取效率的影响. 实验结果显示, 剥离前后量子点发光寿命的变化小于13%, 含有金纳米颗粒的量子点发光强度是剥离前的7倍, 含有金属薄膜的量子点发光强度是剥离前的2倍. 分析表明在金纳米颗粒膜上的量子点荧光强度的增加主要来自于金纳米颗粒对量子点荧光的散射效应, 从而提高量子点发光的提取效率. 相似文献
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采用光致荧光发射谱(PL)和时间分辨荧光发射谱(TRPL)研究了GaAs间隔层厚度对自组装生长的双层InAs/GaAs量子点分子光学性质的影响.首先,测量低温下改变激发强度的PL谱,底层量子点和顶层量子点的PL强度比值随激发强度发生变化,表明两层量子点之间的耦合作用和层间载流子的转移随着间隔层厚度变大而变弱.接着测量改变温度的PL谱,量子点荧光光谱峰值位置(Emax)、半峰全宽及积分强度随温度发生变化,表明GaAs间隔层厚度直接影响到量子点内载流子的动力学过程和量子点发光的热淬灭过程.最后,TRPL测量发现60mL比40mL间隔层厚度样品的载流子隧穿时间有明显延长. 相似文献
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利用分子束外延技术(MBE),在GaAs(001)衬底上自组织生长了不同结构的InAs量子点样品,并制备了量子点红外探测器件。利用原子力显微镜(AFM)和光致发光(PL)光谱研究了量子点的表面结构、形貌和光学性质。渐变InGaAs层的插入有效地释放了InAs量子点所受的应力,抑制了量子点中In组分的偏析,提高了外延层的生长质量,降低了势垒高度,使InAs量子点荧光波长红移。伏安特性曲线和光电流(PC)谱结果表明,生长条件的优化提高了器件的红外响应,具有组分渐变的InGaAs层的探测器响应波长发生明显红移。 相似文献
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We report a discrepancy between near-infrared photoluminescence (PL) and far-infrared photoresponse (PR) efficiencies in self-assembled InAs/GaAs quantum-dot (QD) heterostructures with silicon doping in either InAs QDs or GaAs barriers. The structure with n-GaAs barriers reveals a much higher PR intensity in spite of a weaker PL intensity in comparison with n-InAs QD structure. This discrepancy is explained by differences in the electron occupation of QD sublevel associated with the Fermi-level position and in the mean free path of photogenerated carriers in GaAs barriers due to impurity scattering. 相似文献
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J.J. Yoon S.I. Jung H.J. Park H.K. Suh M.H. Jeon J.Y. Leem E.T. Cho J.I. Lee H.K. Cho Y.G. Mo J.S. Kim J.S. Son I.K. Han 《Physica E: Low-dimensional Systems and Nanostructures》2005,26(1-4):207
The Optical characteristics of InAs quantum dots (QDs) embeded in InAlGaAs on InP have been investigated by photoluminescence (PL) spectroscopy and time-resolved PL. Four different QD samples are grown by using molecular beam epitaxy, and all the QD samples have five-stacked InAs quantum dot layers with a different InAlGaAs barrier thickness. The PL yield from InAs QDs was increased with an increase in the thickness of the InAlGaAs barrier, and the emission peak positions of all InAs QD samples were measured around 1.5 μm at room temperature. The decay time of the carrier in InAs QDs is decreased abruptly in the QD sample with the 5 nm InAlGaAs barrier. This feature is explained by the tunneling and coupling effect in the vertical direction and probably defect generation. 相似文献
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The intermixing of Sb and As atoms induced by rapid thermal annealing (RTA) was investigated for type II GaSb/GaAs self-assembled quantum dots (QD) formed by molecular beam epitaxy growth. Just as in InAs/GaAs QD systems, the intermixing induces a remarkable blueshift of the photoluminescence (PL) peak of QDs and reduces the inhomogeneous broadening of PL peaks for both QD ensemble and wetting layer (WL) as consequences of the weakening of quantum confinement. Contrary to InAs/GaAs QDs systems, however, the intermixing has led to a pronounced exponential increase in PL intensity for GaSb QDs with annealing temperature up to 875 °C. By analyzing the temperature dependence of PL for QDs annealed at 700, 750 and 800 °C, activation energies of PL quenching from QDs at high temperatures are 176.4, 146 and 73.9 meV. The decrease of QD activation energy with annealing temperatures indicates the reduction of hole localization energy in type II QDs due to the Sb/As intermixing. The activation energy for the WL PL was found to drastically decrease when annealed at 800 °C where the QD PL intensity surpassed WL. 相似文献
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Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition
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Photoluminescence (PL) and lasing properties of InAs/GaAs quantum dots (QDs) with different growth procedures prepared by metalorganic chemical vapour deposition are studied. PL measurements show that the low growth rate QD sample has a larger PL intensity and a narrower PL line width than the high growth rate sample. During rapid thermal annealing, however, the low growth rate sample shows a greater blueshift of PL peak wavelength. This is caused by the larger InAs layer thickness which results from the larger 2-3 dimensional transition critical layer thickness for the QDs in the low-growth-rate sample. A growth technique including growth interruption and in-situ annealing, named indium flush method, is used during the growth of GaAs cap layer, which can flatten the GaAs surface effectively. Though the method results in a blueshift of PL peak wavelength and a broadening of PL line width, it is essential for the fabrication of room temperature working QD lasers. 相似文献
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L.J. Hu Y.H. Chen X.L. Ye X.Q. Huang L.Y. Liang F. Ding Z.G. Wang 《Physica E: Low-dimensional Systems and Nanostructures》2007,36(2):221-225
The photoluminescence (PL) of Mn-implanted quantum dot (QD) samples after rapid annealing is studied. It is found that the blue shift of the PL peak of the QDs, introduced by the rapid annealing, decreases abnormally as the implantation dose increases. This anomaly is probably related to the migration of Mn atoms to the InAs QDs during annealing, which leads to strain relaxation when Mn atoms enter InAs QDs or to the suppression of the inter-diffusion of In and Ga atoms when Mn atoms surround QDs. Both effects will suppress the blue shift of the QD PL peaks. The temperature dependence of the PL intensity of the heavily implanted QDs confirms the existence of defect traps around the QDs. 相似文献