等离子体增强化学气相沉积法实现硅纳米线掺硼

用等离子体增强化学气相沉积(PECVD)方法成功实现硅纳米线的掺B.选用Si片作衬底，硅烷 （SiH4）作硅源，硼烷（B2H6）作掺杂气体， Au作催化剂，生长温度440℃.基于气-液-固(VLS)机制，探讨了掺B硅纳米线可能的生长机制.PECVD法化学成分配比更灵活，更容易实现纳米线掺杂，进一步有望生长硅纳米线pn结，为研制纳米量级器件提供技术基础. 关键词： 硅纳米线 化学气相沉积 纳米器件     

衬底对化学气相沉积法制备氧化硅纳米线的影响

通过化学气相沉积法在不同衬底上制备了大量的氧化硅纳米线.选用衬底为Si片、带有约100nm厚SiO2氧化层Si片和石英片.利用场发射扫描电子显微镜(SEM)和透射电镜(TEM，配备有能谱仪)对样品的表面形貌、结构和成分进行研究.结果表明：这些纳米线都为非晶态，但在不同衬底上生长的纳米线形貌、尺寸和化学成分不同.讨论了各种衬底对不同特征氧化硅纳米线生长的影响. 关键词： 化学气相沉积 纳米线 纳米颗粒     

单根准直碳纳米纤维的场发射特性

采用等离子体增强热灯丝化学气相沉积方法，以甲烷和氢气为反应气体，在钨丝衬底上制备出准直的碳纳米纤维(CNFs)，其生长密度小于10.6cm-2，长度为6—30μm，直径为60—100nm.并采用自制的双探针扫描电子显微镜系统，对所生长的单根CNF作了场发射特性研究.结果表明，其场发射开启电压约为5V/μm，相应的发射电流达到20μA/cm2，同时，对不同长度的CNFs及单根CNF不同位置的场发射研究表明，场发射电流的大小不仅与材料本身的功函数、外电场场强、材料的微观结构以及宏观的几何结构有关，而且电子在输运过程中所受到的散射也是决定场发射电流大小的关键因素. 关键词： 碳纳米纤维 化学气相沉积 场发射 扫描电子显微镜     

碳纳米管/硅纳米孔柱阵列的场发射性能

"通过热化学气相沉积的方法将碳纳米管生长到硅纳米孔柱阵列衬底上．采用场发射扫描电子显微镜、透射电子显微镜、高分辨透射电子显微镜、拉曼光谱和X射线能谱对所制备的样品形貌、组成进行了分析．结果发现：所制备产物为一种具有面积大、准周期性的碳纳米管/硅巢状阵列复合结构．能谱分析表明碳纳米管仅含有碳元素．对样品进行场发射性能测试表明该结构开启电压为1.3 MV/m,当外加电压为4.26 MV/m,发射电流为5 mA/cm2．由FN公式计算相应的场增强因子约为1.1￡104．碳纳米管/硅纳米孔柱阵列好的场发射性能被归     

电子束诱导沉积纳米线的电阻与场发射特性

"运用电子束诱导沉积技术在钨针尖表面沉积钨纳米线．在透射电子显微镜中,原位测量单根纳米线的电阻与场发射特性,并观察其显微结构变化．样品台为特制的电性能测试样品台,包括步进电机和压电陶瓷驱动的装置．导电铜片作为与纳米线相对的另一极．自行设计制作锁相放大器电路测量纳米线的电阻．结果表明,纳米线的电阻为0.1*10-3 -m量级．纳米线头部的几何缺陷将影响其场发射特性．纳安级电流将改变纳米线头部的几何结构与微观结构．场发射开启电压比结构变化前低11 V左右．"     

硅纳米线尖端阵列的制备及其场发射性能研究

将银镜反应与金属催化化学刻蚀相结合,在室温附近成功地制备出了硅纳米线尖端阵列,其长度为4~7μm,中间部分的直径在100~300nm之间。该方法操作简单、高效、无毒、可控以及低成本,且不需要高温、复杂的设备,对环境也没有特殊要求。性能测试结果显示:该硅纳米材料能够有效实现电子发射,开启电场约为2.7V/μm(电流密度10μA/cm2处);硅纳米尖端阵列的场增强因子约为692,可应用在场发射器件之上。     

碳纳米片-碳纳米管复合材料的一步合成及其场 发射性质研究

利用等离子体化学气相沉积技术, 在引入Ti过渡层后的Co膜表面一步制备出碳纳米片-碳纳米管复合材料, 研究了Co膜厚度对复合材料形貌及场发射性质的影响. 当Co薄膜厚度为11 nm时, 得到了垂直基片定向生长的碳纳米管和碳纳米片复合物, 此时, 碳纳米片分布在碳纳米管的管壁上和管的顶端, 样品的场发射性能最佳.     

硅纳米线尖端阵列的制备及其场发射性能研究

将银镜反应与金属催化化学刻蚀相结合,在室温附近成功地制备出了硅纳米线尖端阵列,其长度为4~7 m,中间部分的直径在100~300 nm之间。该方法操作简单、高效、无毒、可控以及低成本,且不需要高温、复杂的设备,对环境也没有特殊要求。性能测试结果显示：该硅纳米材料能够有效实现电子发射,开启电场约为2.7 V/m（电流密度10 A/cm2处）;硅纳米尖端阵列的场增强因子约为692,可应用在场发射器件之上。     

纳米硅粒子的表面氧化及其光致发光特性

采用射频等离子体增强化学气相沉积技术制备了纳米晶硅粒子,并对其溶液发光的稳态和瞬态特性进行了研究.稳态光致发光结果显示,新制备的纳米硅粉体表现为峰值位于440 nm附近的蓝色发光,经长时间氧化后,该波段发光强度显著增强,并且出现另一峰值位于750 nm附近的红色发光带.不同波长激发和时间分辨光致发光谱的分析表明,纳米硅...     

Preparation of few-layer graphene-capped boron nanowires and their field emission properties

Large-area boron nanowire(BNW) films were fabricated on the Si(111) substrate by chemical vapor deposition(CVD). The average diameter of the BNWs is about 20 nm, with lengths of 5–10 μm. Then, graphene-capped boron nanowires(GC-BNWs) were obtained by microwave plasma chemical vapor deposition(MPCVD). Characterization by scanning electron microscopy indicates that few-layer graphene covers the surface of the boron nanowires. Field emission measurements of the BNWs and GC-BNW films show that the GC-BNW films have a lower turn-on electric field than the BNW films.     

Tuning field emission properties of boron nanocones with catalyst concentration

Single crystalline boron nanocones are prepared by using a simple spin spread method in which Fe 3 O 4 nanoparticles are pre-manipulated on Si(111) to form catalyst patterns of different densities.The density of boron nanocones can be tuned by changing the concentration of catalyst nanoparticles.High-resolution transmission electron microscopy analysis shows that the boron nanocone has a β-tetragonal structure with good crystallization.The field emission behaviour is optimal when the spacing distance is close to the nanocone length,which indicates that this simple spin spread method has great potential applications in electron emission nanodevices.     

Synthesis and field emission properties of GaN nanowires

Gallium nitride (GaN) nanowires grown on nickel-coated n-type Si (1 0 0) substrates have been synthesized using chemical vapor deposition (CVD), and the field emission properties of GaN nanowires have been studied. The results show that (1) the grown GaN nanowires, which have diameters in the range of 50-100 nm and lengths of several micrometers, are uniformly distributed on Si substrates. The characteristics of the grown GaN nanowires have been investigated using X-ray diffraction (XRD) and transmission electron microscopy (TEM), and through these investigations it was found that the GaN nanowires are of a good crystalline quality (2) When the emission current density is 100 μA/cm², the necessary electric field is an open electric field of around 9.1 V/μm (at room temperature). The field enhancement factor is ∼730. The field emission properties of GaN nanowires films are related both to the surface roughness and the density of the nanowires in the film.     

Preparation of patterned boron nanowire films with different widths of unit-cell and their field emission properties

Large-area patterned films of boron nanowires(BNWs) are fabricated at various densities by chemical vapor deposition(CVD). Different widths of unit-cell of Mo masks are used as templates. The widths of unit-cell of Mo masks are100 μm, 150 μm, and 200 μm, respectively. The distance between unit cells is 50 μm. The BNWs have an average diameter of about 20 nm and lengths of 10 μm–20 μm. High-resolution transmission electron microscopy analysis shows that each nanowire has a β-tetragonal structure with good crystallization. Field emission measurements of the BNW films show that their turn-on electric fields decrease with width of unit-cell increasing.     

AuPd CATALYTIC NANOPARTICLE SIZE EFFECT ON THE FORMATION OF AMORPHOUS SILICON NANOWIRES

Amorphous silicon (a-Si) nanowires have been prepared on SiO₂/Si substrates by AuPd nanoparticles / silane reaction method. Field-emission scanning electron microscopy and transmission electron microscopy were used to characterize the samples. The typical a-Si nanowires we obtained are of a uniform diameter about 20 nm and length up to several micrometers. The growth mechanism of the nanowires seems to be the vapor-liquid-solid mechanism. The catalytic particle size effect on the formation of the nanowires and the cause of forming amorphous state Si nanowires are discussed.     

合成温度和N2/O2流量比对碳纤维衬底上生长的SnO2纳米线形貌及场发射性能影响

采用化学气相沉积法系统研究了合成温度和N₂/O₂流量对生长在碳纤维衬底上的SnO₂纳米线形貌及场发射性能的影响规律. 利用扫描电镜(SEM)、透射电镜(TEM), X射线衍射(XRD)及能谱仪(EDS)对产物细致表征, 结果表明, SnO₂纳米线长径比随反应温度的升高而增大; 随N₂/O₂流量比值的增大先增大后变小, 场发射测试表明, 合成温度780 ℃, N₂/O₂流量比为300 : 3 时SnO₂纳米线阵列具有最佳的场发射性能, 开启电场为1.03 V/μm, 场强增加到1.68 V/μm时, 发射电流密度达0.66 mA/cm², 亮度约2300 cd/m².     

A simple method to synthesize worm-like AlN nanowires and its field emission studies

The worm-like AlN nanowires are fabricated by the plasma-enhanced chemical vapor deposition (PECVD) on Si substrates through using Al powder and N₂ as precursors, CaF₂ as fluxing medium, Au as catalyst, respectively. The as-grown worm-like AlN nanowires each have a polycrystalline and hexagonal wurtzite structure. Their diameters are about 300 nm, and the lengths are over 10 μm. The growth mechanism of worm-like AlN nanowires is discussed. Hydrogen plasma plays a very important role in forming the polycrystalline structure and rough surfaces of worm-like AlN nanowires. The worm-like AlN nanowires exhibit an excellent field-emission (FE) property with a low turn-on field of 4.5 V/μm at a current density of 0.01 mA/cm² and low threshold field of 9.9 V/μm at 1 mA/cm². The emission current densities of worm-like AlN nanowires each have a good stability. The enhanced FE properties of worm-like AlN nanowires may be due to their polycrystalline and rough structure with nanosize and high aspect ratio. The excellent FE properties of worm-like AlN nanowires can be explained by a grain boundary conduction mechanism. The results demonstrate that the worm-like AlN nanowires prepared by the proposed simple and the PECVD method possesses the potential applications in photoelectric and field-emission devices.     

场致发射阴极碳纳米管的热化学气相沉积法低温生长

结合丝网印刷和过滤阴极真空电弧法、离子束溅射方法，在普通玻璃衬底上制备催化剂图案，采用低温热化学气相沉积法(CVD)生长碳纳米管/纤维(CNTs)薄膜.研究了不同种类催化剂对CNTs薄膜生长及其场发射的影响.结果表明，在a-C:Co,Ni-Cu和Cu三种催化剂上没有获得明显的CNTs，在外加电场小于4.4V/μm时没有观察到场发射；而在Ni-Fe及Ni-Cr两种催化剂上获得了大量的CNTs，并且表现出良好的场发射性能，开启电场为2.5V/μm，这种热CVD有简单、低温等优点，在CNTs场发射显示器的阴极制备中有潜在的应用价值.     

Electron field emission from boron doped microcrystalline diamond

Field emission properties of hot filament chemical vapor deposited boron doped polycrystalline diamond have been studied. Doping level (N_B) of different samples has been varied by the B/C concentration in the gas feed during the growth process and doping saturation has been observed for high B/C ratios. Threshold field (E_th) for electron emission as function of B/C concentration has been measured, and the influences of grain boundaries, doping level and surface morphology on field emission properties have been investigated. Carrier transport through conductive grains and local emission properties of surface sites have been figured out to be two independent limiting effects in respect of field emission. Emitter current densities of 500 nA cm⁻² were obtained using electric fields less than 8 V/μm.