孤立波在一维复合颗粒链中传播特性的模拟研究

采用分子动力学方法模拟研究了孤立波在重轻颗粒相间排列的一维复合颗粒链中的传播特性.结果发现,在轻重颗粒的质量比较大或较小时,散射作用较弱,颗粒的速度和孤立波的速度衰减较慢.在轻重颗粒的质量比为中等时,散射作用较强,颗粒的速度和孤立波的速度衰减较快.孤立波在通过重-轻颗粒界面时,存在有增速效应,可以提高孤立波的传播速度.并且,轻重颗粒的质量比越小增速效应越强.在散射作用和增速效应的共同作用下,改变轻重颗粒的质量比可以调控孤立波在重-轻颗粒链中的传播时间.     

渡越辐射过程中的能量关系和荷电粒子的速率变化问题

本文从麦克斯韦方程出发,定量地讨论了高速带电粒子通过界面产生渡越辐射过程中的能量平衡问题;并由此揭示了带电粒子越过箔片组过程中的速率脉动变化问题.这一工作有助于完善带电粒子通过箔片组产生渡越辐射的理论.     

超热电子产生的靶后相干渡越辐射光谱实验研究

利用OMA光学多道分析仪测量了激光与薄膜靶相互作用中产生的辐射光谱，在靶后观察到红移的二次谐波发射. 这种二次谐波是v×B加热产生的、具有微脉冲结构的超热电子束在等离子体-真空边界产生的相干渡越辐射(CTR). 随着激光能量的增大，红移峰向长波方向移动，光谱同时发生展宽. 分析认为，等离子体临界面的迅速膨胀是导致二次谐波红移的主要原因. 随着预脉冲能量的增大，临界面膨胀速度增大，导致了发射峰更大的红移. 实验还测量了靶面法线方向的辐射光谱，观察到基频辐射的红移和展宽. CTR为诊断临界面的运动方向和速度提供了一种新的方法. 关键词： 相干渡越辐射 超热电子 超短超强激光 等离子体相互作用     

半刚性聚电解质链与带相反电荷颗粒复合体系的动力学模拟

用Langevin动力学研究了半刚性聚电解质链与带相反电荷球状颗粒在溶液中的复合体系，并研究了链的拉伸性质.具体考察了带电颗粒的电量以及溶液中盐离子浓度对复合体系的影响.链两端没有施加外力的情况下，当溶液中盐离子浓度较低时，复合体系呈现一种串珠状结构；当溶液中盐离子浓度较高时，复合体系转变为一种聚集态结构.链的两端施加外力的情况下，带电颗粒从链上脱落的过程可以分为两步. 关键词： 聚电解质链 Langevin动力学 Debye-Hückel长度     

带电粒子与超晶格相互作用及其超高能粒子识别

讨论了非沟道粒子与晶体的相互作用及其渡越辐射, 并将渡越辐射同沟道辐射进行了比较, 结果表明, 渡越辐射对沟道辐射的贡献主要是在长波区域使沟道辐射的本底增强; 由于超晶格是由两种不同介电性能的材料交替生长而成的多层薄膜结构, 它的渡越辐射比较强. 正是这个特点, 可望利用超晶格的渡越辐射来识别超高能粒子.     

PET与SAN/PAN复合膜界面的 FTIR-ATR研究

应用傅里叶衰减全反射红外光谱(FTIR-ATR)技术对聚对苯二甲酸乙二酯(PET)表面形成不同厚度的超薄苯乙烯-丙烯腈共聚物(SAN)和聚丙烯腈(PAN)的共混物膜及其SAN/PAN共混物膜的厚度、界面层PET亚甲基的构像变化等进行研究,结果表明PET表面共混物膜的厚度随共混物混合液中SAN含量的增加而增加,界面层成膜物质与基材的分子链段间发生了相互渗透和扩散,分子链的极性越相近,越容易成膜.对PET红外光谱吸收峰的A1340/A1410进行定量研究表明,在成膜过程中,PET分子链的亚甲基构像由反式向旁式转变,引起界面层PET的结晶度降低.FTIR-ATR是分析复合膜界面层结构信息的有效方法.     

双层有机发光二极管中复合效率和复合区域宽度的研究

本文建立了双层有机发光二极管中载流子的注入、输运和复合的理论模型.模型中采用了较合理的无序跳跃模型来处理界面问题.计算和讨论了空穴传输层厚度和内界面处的空穴势垒对器件复合效率和复合区域宽度的影响.结果表明:器件结构的变化导致电场强度在器件中的重新分布,空穴传输层厚度和内界面处空穴势垒的变化对器件的复合效率和复合区域宽度有重要影响.     

阻塞态颗粒介质的慢速阻力

报导了不同尺寸的大球缓慢压入颗粒床过程中所受阻力随深度变化的实验测量结果,发现阻力曲线在不同的深度区域有不同的增长规律,存在凹—凸转变.阻力在较浅的区域满足1.3次方的幂率增长,而在较深的区域趋向0.3次方的幂率增长.通过研究凹凸转变中拐点的性质,发现这种阻力增长速度趋缓的转变不是来源于前人认为的器壁支撑导致的介质压强饱和,而是来源于侵入物自身的体积效应.此外,适用于颗粒介质快速阻力的静水压力描述并不适用于阻塞态颗粒介质的慢速阻力行为,实验表明慢速阻力对深度的依赖关系不是线性,且测得的静水压力系数也远大于理论估算值. 关键词： 颗粒介质 阻力 力链重组     

一种选择性增强光谱吸收比/发射率的薄膜结构

本文利用严格耦合波分析(RCWA)的方法数值求解并分析了一个半导体硅和金属银组成的复合薄膜结构,该结构的界面处具有一维周期性的微槽结构.结果显示,微槽结构的存在大大增强了该复合薄膜结构在硅能隙对应波长附近的光谱吸收比/发射率,而在波长大于能隙波长区域仍然保持较低吸收比/发射率.增强原因是由于界面处的电磁表面波(electromagnetic surface wave)被激发以及微槽多阶衍射波的相互作用的结果.通过调整微槽的几何尺寸可对该复合薄膜结构的吸收比/发射率进行优化.这种结构在光电能量转换系统中有潜在用处.     

渡越辐射在强流电子束诊断中的应用

文中描述了渡越辐射用于束流诊断的理论依据,介绍了利用渡越辐射对18MeV,2.7kA的强流脉冲电子束进行诊断的实验方案,介绍了在强流束测量中遇到的困难和解决方法.实验中获得了渡越辐射的特征图案,并对特征图案进行了分析,得到了测量时应该使用偏振片的结论.据此,利用渡越辐射测量了强流脉冲束的剖面、能量、发散角.并采用渡越辐射与切伦科夫辐射相结合的方法，用切伦科夫辐射测量束剖面,用渡越辐射测量能量和发散角,在同一次实验中获得了强流脉冲束的归一化发射度.     

The composite electron

In this paper, the electron is considered a bound state of a neutrino and a negative pion. A model Lagrangian density that combines weak and electromagnetic interactions gives rise to equations of motion that define such a state. In this model, the muon is a bound state of an antineutrino and a negative pion, which explains why it cannot decay into an electron and a photon. The decay of unstable particles is reduced to pair creation plus particle recombination. The neutral pion is described by an interference between the charged-pion states. Several variations of the model are also presented.     

Effect of interconfigurational fluctuations on superconducting magnetic alloys

A theory which includes impurity-atom correlation and many electron structure at the outset and gives rise to interconfigurational excitation energy resonances close to the Fermi energy is applied to effects of Ce impurities on the superconducting transition temperature of La and La_1?xTh_x, as functions of pressure and x respectively, and on the normal state resistivity of La as a function of pressure.     

Molecular origin of friction

The wearless friction originating from molecular interactions has been discussed in this paper. We find that the frictional properties are closely related to the structural match of two surfaces in relative motion. For the surfaces with incommensurate structure and week inter-surface interaction, zero static and kinetic friction can be achieved. In a sliding considered as in a quasi-static state, the energy dissipation initiates when interfacial particles move in a discontinuous fashion, which gives rise to a finite kinetic friction. The state of superlubricity is a result of computer simulations, but the prediction will encourage people to look for a technical approach to realizing the state of super low friction.     

Molecular origin of friction

The wearless friction originating from molecular interactions has been discussed in this paper. We find that the frictional properties are closely related to the structural match of two surfaces in relative motion. For the surfaces with incommensurate structure and week inter-surface interaction, zero static and kinetic friction can be achieved. In a sliding considered as in a quasi-static state, the energy dissipation initiates when interfacial particles move in a discontinuous fashion, which gives rise to a finite kinetic friction. The state of superlubricity is a result of computer simulations, but the prediction will encourage people to look for a technical approach to realizing the state of super low friction.

     

Formation and structure of a soliton in an antiferroelectric liquid crystal in an electric field

The soliton structure in an antiferroelectric liquid crystal in an electric field is calculated in the discrete phenomenological Landau model for phase transitions. The anticlinic structure of the antiferroelectric crystal gives rise to nontrivial features of the soliton structure and the stability of the soliton. The soliton is topologically stable in a metastable state if the electric field is much higher than the field of antiferroelectric-helix unwinding. A structural transition with a step-like change in the orientation of molecules occurs as the soliton field varies. A peculiar soliton (synclinic pair) can be formed if the barrier between the anti- and ferroelectric structures is large. The calculation shows the possibility of a large electroclinic effect in the soliton, i.e., a variation in the molecular tilt angle in an electric field in the vicinity of the transition of the structure to the synclinic state.     

INTERACTION BETWEEN A MOVING ATOM AND AN ELECTROMAGNETIC WAVE

Dynamics of a two-level atom moving in an electromagnetic field is studied. The atomic motion gives rise to a momentum-dependent detuning which holds back the atomic transition, and leads to a momentum-dependent Rabi oscillation which causes an overlapping among different Rabi oscillations. When the field is in a Fock state, the atomic population and the mean momentum of the atom exhibit damping oscillation, the damping rate is related to the momentum distribution; the collapse-revival phenomena of the atomic population and the mean momentum will occur if the atomic momentum has some special distribution. When the field is in a superposition state, the collapse-revival phenomena are modified by the atomic momentum distribution and disappear for the wider atomic momentum wavepackets. We also find that each atomic level will split into two sublevels with the same energy difference when the field is in a Fock state and the atom has a definite momentum.     

Determinants of the structured and structureless green emissions of ZnO

Green emission can be identified as either a structured or a structureless emission. In the downward surface band bending region, the influence of defects on the continuous change in the 0-0 electronic transition was found to be a dominating factor that differentiates the characteristics of green emission. Such a change in the 0-0 electronic transition gives rise to the structureless green emission at higher energy, while the 0-0 electronic transition in the bulk of ZnO plays an important role resulting in structured green emission with lower energy.     

Auditory discrimination of rise and decay times in tone and noise bursts.

There are indications in the literature on speech perception that differences in rise and decay times of the amplitude envelope are relevant physical correlates in phonemic contrasts. Yet, little is known about the perception of rise and decay times as such. In the present study we have attempted to establish JND's for both rise and decay times of 1000-Hz sine waves as well as white noise bursts by means of an adjustment method. The rise and decay of stimulus amplitude were synthesized to be linear functions of time. Results show that the JND for a change in rise/decay time is generally about 25% of the duration of the rise/decay time. This Weber fraction is a minimum at rise/decay times of about 80 ms and increases significantly for rise/decay times below 20 ms. Of the four signal condition noise bursts were performed with the greatest accuracy (at moderate rise/decay times), while changes in onset time of sine waves were discriminated best at very short rise times (where energy splatter may have contributed an additional cue).     

Stick-slip friction and energy dissipation in boundary lubrication

Shearing of a simple nonpolar film, right after the liquid-to-solid phase transition under nanometer confinement, is studied by using a liquid-vapor molecular dynamics simulation method. We find that, in contrast with the shear melting and recrystallization behavior of the solidlike phase during the stick-slip motion, interlayer slips within the film and wall slips at the wall-film interface are often observed. The ordered solidified film is well maintained during the slip. Through the time variations of the frictional force and potential energy change within the film, we find that both the friction dissipation during the slip and the potential energy decay after the slip in the solidified film take a fairly large portion of the total energy dissipation.     

Bias-dependent generation and quenching of defects in pentacene

We describe a defect generation phenomenon that is new to organic semiconductors. A defect in pentacene single crystals can be created by bias-stress and persists at room temperature for an hour in the dark but only seconds with 420 nm illumination. The defect gives rise to a hole trap at Ev+0.38 eV and causes metastable transport effects at room temperature. Creation and decay rates of the hole trap have a 0.67 eV activation energy with a small (10(8) s(-1)) prefactor, suggesting that atomic motion plays a key role in the generation and quenching process.