Ripening of subsurface amorphous C clusters formed by low energy He ion bombardment of graphite

Surfaces of highly oriented pyrolytic graphite (HOPG) were bombarded with 100 eV and 500 eV He ions at ion doses of a few 10¹⁵ cm² and temperatures ranging from 300 K to 800 K. AFM images were recorded to investigate the topography of the surfaces after ion bombardment. Supplementary electron energy loss (EEL) and thermal desorption (TD) spectra were measured to determine the C sp² fraction of the bombarded surfaces and the amount of trapped He. The temperature at which He ion bombardment was performed had a drastic effect on the surface structure and topography of the targets on the angstrom-scale and micrometer-scale as well. At 300 K, limited defect atom transport revealed an amorphous but relatively flat HOPG surface. Bombardment at 400 K leads to a granular structure of small protrusions in micrometer-scale AFM images, however, without crystalline order on the surface. The protrusions are due to the formation of subsurface clusters of carbon formed by atoms displaced by ion irradiation. Towards higher temperatures during bombardment the clusters agglomerate and cause the surface layers to bend upwards in dome-like shapes. Simultaneously, the microscopic order of the graphite lattice recovers. At 800 K large areas of the top layer retain their order during bombardment, however, a small number of domes indicate that there still exist some subsurface C clusters. The cluster–cluster distance deduced from the dome distribution indicates that the clusters grow through a ripening process. Annealing of graphite at high temperatures subsequent to ion bombardment at low temperatures is much less effective for recovering the surface crystallinity than ion bombardment at high temperature.     

Ar+8轰击石墨表面损伤的扫描隧道显微镜观测研究

报道了用10—112MeV能量的Ar+8离子轰击高定向石墨造成损伤的原子水平观测结果,给出了损伤形貌、损伤大小和损伤数密度.讨论了损伤与表面核能损的关系及损伤过程的可能机制.     

Decomposition mechanism of triethylindium (TEI) on a GaP(0 0 1)-(2×1) surface studied by LEED, AES, TPD and HREELS

Adsorption and decomposition of triethylindium (TEI: (C₂H₅)₃In) on a GaP(0 0 1)-(2×1) surface have been studied by low-energy electron diffraction (LEED), Auger electron spectroscopy (AES), temperature-programmed desorption (TPD) and high-resolution electron energy loss spectroscopy (HREELS). It is found from the TPD result that ethyl radical and ethylene are evolved at about 300–400 and 450–550 K, respectively, as decomposition products of TEI on the surface. This result is quite different from that on the GaP(0 0 1)-(2×4) surface. The activation energy of desorption of ethyl radical is estimated to be about 93 kJ/mol. It is suggested that TEI is adsorbed molecularly on the surface at 100 K and that some of TEI molecules are dissociated into C₂H₅ to form P–C₂H₅ bonds at 300 K. The vibration modes related to ethyl group are decreased in intensity at about 300–400 and 450–550 K, which is consistent with the TPD result. The TEI molecules (including mono- and di-ethylindium) are not evolved from the surface. Based on the TPD and HREELS results, the decomposition mechanism of TEI on the GaP(0 0 1)-(2×1) surface is discussed and compared with that on the (2×4) surface.     

Auger electron spectroscopy and electron energy loss spectroscopy studies on carbonization of Si(100) and (111) surfaces with ethylene

The reactions of Si(100) and Si(111) surfaces at 700 °C (973 K) with ethylene (C₂H₄) at a pressure of 1.3×10⁻⁴ Pa for various periods of time were studied by using Auger electron spectroscopy (AES) and electron energy loss spectroscopy (ELS). For a C₂H₄ exposure level, the amount of C on the (111) surface was larger than that on the (100) surface. The formation of β-SiC grain was deduced by comparing the C_KLL spectra from the sample subjected to various C₂H₄ exposure levels, and from β-SiC crystal.     

Observation of the Damage on HOPG Surface Induced by Ar+8 Ions

Highly oriented pyrolytic graphite (HOPG) samples were bombarded by Ar+8 ions with energy range from 10.1 to 112MeV. After bombardment the sample surfaces were observed using a STM and NanoScope. The resultS show that the energetic ion could cause observable praotrusionlike damage on the HOPG surface.The relationship betWeen damage and energy loss, and the possible mechanism of damage process are discussed.     

Substrate-induced freezing of alkane monolayers adsorbed on Au(1 1 1) dependant on the alkane/gold misfit

The molecular structure of the interfaces between pure C_nH_2n+2 (n=10, 12, 14, 16) and Au(1 1 1) surface has been studied by scanning tunneling microscopy. At 291 K, self-organized monolayers with a lamella structure are formed with these alkanes. The ordered monolayers are melting at temperature higher by 46, 28, 15, 5 K than the melting point of bulk C_nH_2n+2 crystals with n=10, 12, 14, 16, respectively. Two kinds of melting process were observed: (i) a direct solid/liquid phase transition within the monolayer for C₁₀H₂₂, C₁₂H₂₆ and C₁₄H₃₀ molecules, (ii) an intermediate phase for C₁₆H₃₄ molecules. This mesophase corresponds to a two-dimensional liquid crystal formed by molecules moving along their axis and along Au1 1 0. These results agree well with calculations using a geometric model taking in account the misfit between the CH₂–CH₂–CH₂ period along alkyl chain and the gold lattice along 1 1 0 direction.     

RAS: An efficient probe to characterize Si(0 0 1)-(2 × 1) surfaces

A complete inspection of the capabilities of reflectance anisotropy spectroscopy (RAS) in studying the adsorption of molecules or atoms on the Si(0 0 1)-(2 × 1) surface is presented. First, a direct comparison between RA spectra recorded on the clean Si(0 0 1)-(2 × 1) and the corresponding topography of the surface obtained using scanning tunneling microscopy (STM) allows us to quantify the mixing of the two domains that are present on the surface. Characteristic RA spectra recorded for oxygen, hydrogen, water, ethylene, benzene are compared to try to elucidate the origin of the optical structures. Quantitative and qualitative information can be obtained with RAS on the kinetics of adsorption, by monitoring the RA signal at a given energy versus the dose of adsorbate; two examples are presented: H₂/Si(0 0 1) and C₆H₆/Si(0 0 1). Very different behaviours in the adsorption processes are observed, making of this technique a versatile tool for further investigations of kinetics.     

The interaction of C2Cl4 with fe(110)

Quantitative adsorption studies, temperature programmed desorption (TPD) and Auger spectroscopy have been used to study the interaction of C₂Cl₄ with Fe(110) at 90 and 325 K. At 90 K, multilayer C₂Cl₄ adsorption occurs. The following desorption products are observed in the temperature range of 90–1050 K: C₂Cl₄ from the multilayer and the monolayer, FeCl₂, and a high mass iron chloride species with mass spectrometer cracking products FeCl⁺₂, FeCl⁺, and Fe⁺. Irreversible dissociative C₂Cl₄ adsorption occurs at 325 K and the only desorption product which is observed is the high mass iron chloride species. Auger spectroscopy shows that surface carbon from C₂Cl₄ starts to diffuse into the bulk of the crystal at ˜ 480 K while small coverages of chlorine remain on the surface of the crystal even after heating to 1050 K. Comparison of the behavior of C₂Cl₄ and CCl₄ on Fe(110) indicates that radical products (·CCl₃ and :CCl₂) observed to be produced from CCl₄ adsorption are not produced from C₂Cl₄ adsorption. This difference is probably due to the enhanced surface reactivity of the C=C bond in C₂Cl₄. A special reactivity of iron defect sites for C₂Cl₄ is observed through the production of associated FeCl₂ species which desorb via zero-order kinetics with an activation energy of 44.8 ± 8.5 kcal/mol, the sublimation enthalpy of FeCl₂.     

Adsorption of NO on Au atoms and dimers supported on MgO(1 0 0): DFT studies

The adsorption of NO on single gold atoms and Au₂ dimers deposited on regular O²⁻ sites and neutral oxygen vacancies (F_s sites) of the MgO(1 0 0) surface have been studied by means of DFT calculations. For Au₁/MgO the adsorption of NO is stronger when the Au atom is supported on an anionic site than when it is on a F_s site, with adsorption binding energies of 1.1 and 0.5 eV, respectively. In the first case the spin density is mainly concentrated on the metal atom and protruding from the surface. In such a way, an active site against radicals such as NO is generated. On the F_s site, the presence of the vacancy delocalizes the spin into the substrate, weakening its coupling with NO. For Au₂/MgO, as this system has a closed-shell configuration, the NO molecules bonds weakly with Au₂. Regarding the N–O stretching frequencies, a very strong shift of 340–400 cm⁻¹ to lower frequencies is observed for Au₁/MgO in comparison with free NO.     

Mechanism and energetics of dimerization of SiH2 radicals on H-terminated Si(0 0 1)-(2×1) surfaces

The mechanism and energetics are presented of the dimerization of two adsorbed surface SiH₂ groups on the H-terminated Si(0 0 1)-(2 × 1) surface to form Si₂H₄ species during the initial stages of growth in plasma deposition of hydrogenated amorphous silicon (a-Si:H) films. The reactions are observed during classical molecular-dynamics (MD) simulations of a-Si:H film deposition from SiH₂ radical precursors impinging on an initially H-terminated Si(0 0 1)-(2 × 1) surface and substrate temperature, T, over the range 500T700 K. The Si₂H₄ species resulting from the surface SiH₂ dimerization reactions undergo surface conformational changes resulting in either a non-rotated (NRD) or a rotated dimer (RD) configuration. The RD configuration is found to be the energetically favorable one. The MD simulation results for the structure of the NRD and RD surface Si₂H₄ configurations corroborate with ab initio calculations of optimized adsorption configurations of SiH₂ radicals on crystalline Si surfaces, as well as results of STM imaging of the thermal decomposition of disilane on Si(0 0 1).     

First-principles study of the interaction of oxygen with the SnO2(1 1 0) surface

First-principles calculations based on density functional theory in the generalised gradient approximation, together with pseudopotentials and plane-wave basis sets, have been used to investigate the energetics of oxygen adsorption on stoichiometric and weakly and strongly reduced SnO₂(1 1 0) surfaces. It is shown that, if the surface species formed by oxygen adsorption are restricted to be charge neutral, then oxygen cannot be exothermically adsorbed from the gas phase on the stoichiometric surface. A variety of molecular and dissociative modes of adsorption are examined on the reduced surface produced by removing all bridging oxygens and on the weakly reduced surface that results from removal of only a fraction of these oxygens, with the adsorbed species being in both the singlet and the triplet states, and we identify a number of modes not discussed before in the literature. We use the calculated adsorption energies to propose a tentative assignment of these adsorption modes to the peaks observed in temperature programmed desorption experiments on the SnO₂ and TiO₂(1 1 0) surfaces.     

Cluster and periodic DFT calculations of adsorption and activation of CO2 on the Cu(hkl) surfaces

The adsorption behavior and thermal activation of carbon dioxide on the Cu(1 1 1), Cu(1 0 0), and Cu(1 1 0) surfaces have been investigated by means of density functional theory calculations and cluster models and periodic slabs. According to the cluster models, the optimized results indicate that the basis set of C and O atoms has a distinct effect on the adsorption energy, but an indistinct one on the equilibrium geometry. For the CO₂/Cu(hkl) adsorption systems studied here, the final structure of adsorbed CO₂ is near linear and the preferred modes for the adsorption of CO₂ onto the Cu(1 1 1), Cu(1 0 0), and Cu(1 1 0) surfaces are the side-on adsorption at the cross bridge site with an adsorption energy of 13.06 kJ/mol, the side-on adsorption at the short bridge site (13.54 kJ/mol), and the end-on adsorption on the on-top site with C–O bonds located along the short bridge site (26.01 kJ/mol), respectively. However, the calculated adsorption energies from periodic slabs are lower as compared to the experimental data as well as the cluster model data, indicating that the periodic slab approach of generalized gradient approximation in the density function theory may be not suitable to obtain quantitative information on the interaction of CO₂ with Cu(hkl) surfaces.     

Time evolution of interface roughness during thermal oxidation on Si(0 0 1)

The surface morphological change at an initial stage of thermal oxidation on Si(0 0 1) surface with O₂ was investigated as a function of oxide coverage by a real-time monitoring method of Auger electron spectroscopy (AES) combined with reflection high energy electron diffraction (RHEED). At 653 °C where oxide islands grow laterally, protrusions were observed to develop under the oxide islands as a consequence of concurrent etching of the surface. The rate of etching was measured from a periodic oscillation of RHEED half-order spot intensity I_(1/2,0) and I_(0,1/2). At 549 °C where Langmuir-type adsorption proceeds, it was observed that both I_(1/2,0) and I_(0,1/2) decrease more rapidly in comparison with an increase of oxide coverage and the intensity ratio between them decreases gradually with O₂ exposure time. These suggest that Langmuir-type adsorption occurs at sites where O₂ adsorbs randomly, leading to subdivision of the 2×1 and 1×2 domains by oxidized regions, and that Si atoms are ejected due to volume expansion in oxidation to change the ratio between 2×1 and 1×2 domains.     

Hydrogen adsorption on Gd(0001)

The electronic structure of hydrogen adsorbate-induced states on Gd(0001) was investigated by means of photoelectron spectroscopy with linearly polarized radiation. The E vector of the incoming photon beam is rotatable. Clean and well-ordered rare-earth (0001) surfaces exhibit a highly localized surface state near the Fermi edge. After the adsorption of hydrogen, the surface state disappears and an additional sharp feature at about 4 eV binding energy is observed. For this latter state, the ratio of the radial matrix elements as well as the relative phase shifts were determined to be R=R_p/R_f=2.4±0.3 and δ_f−δ_p=310±10°, respectively. The removal of the Gd surface state by hydrogen adsorption was investigated by means of scanning tunneling microscopy (STM) and spectroscopy (STS). The removal of the surface state exhibits domain-like behavior, with surface steps acting as domain boundaries. The tunneling spectra reveal that hydrogen adsorption causes a dramatic reduction in the differential conductivity near the Fermi level.     

SiC formation on Si(100) via C60 precursors

The interaction between C₆₀ molecules and the Si(100) surface and the preparation of silicon-carbide thin films by thermal reaction of C₆₀ molecules with the Si(100) surface have been investigated using X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, reflection high-energy electron diffraction and atomic force microscopy measurements. The effects of annealing temperature and C₆₀ coverage on the SiC formation will be discussed. It is found that the C₆₀ molecules bond covalently with silicon, and the number of bonds increase upon increasing the annealing temperature. Annealing at T≥830°C entails the formation of stoichiometric silicon carbide clusters that coalesce to form a continuous SiC layer when the C₆₀ coverage is greater than one monolayer. Deep pits acting as silicon diffusion channels are present with dimensions that increase with the amounts of C₆₀.

The interaction of C₆₀ with the SiC surface was also investigated. It is found that a similar covalent interaction is present in the two systems C₆₀/Si and C₆₀/SiC.     

A comparative infrared study of H2O reactivity on Si(1 0 0)-(2 × 1), (2 × 1)-H, (1 × 1)-H and (3 × 1)-H surfaces

The water adsorption on the bare and H-terminated Si(1 0 0) surfaces has been studied by the BML-IRRAS technique. It is found that H-terminated surfaces are much less reactive compared to the bare silicon surfaces. The (1 × 1)-H and (3 × 1)-H surfaces show similar and less reactivity pattern compared to the (2 × 1)-H surface. At higher exposures, the water reaction with coupled monohydride species provides an effective channel for oxygen insertion into the back bonds of dihydride species. It is not attributed to the H–Si–Si–H + H₂O → H–S–Si–OH + H₂, which could give rise to the characteristic Si–H and Si–OH modes, respectively at 2081 and 921 cm⁻¹. A more suitable reaction mechanism involving a metastable species, H–Si–Si–H + H₂O → H₂Si  HO–Si–H (metastable) explains well the bending modes of oxygen inserted silicon dihydride species which are observed relatively strongly in the reaction of water with H-terminated Si(1 0 0) surfaces.     

Investigation of the role of oxygen in NO reduction by C2H4 on the surface of stepped Pt(3 3 2)

The influence of pre-dosed oxygen on NO–C₂H₄ interactions on the surface of stepped Pt(3 3 2) has been investigated using Fourier transform infrared reflection–absorption spectroscopy (FTIR-RAS) and thermal desorption spectroscopy (TDS). The presence of oxygen significantly suppresses the adsorption of NO on the steps of Pt(3 3 2), leading to a very specific adsorption state for NO molecules when oxygen–NO co-adlayers are annealed to 350 K (assigned as atop NO on step edges). An oxygen-exchange reaction also takes place between these two kinds of adsorbed molecules, but there appears to be no other chemical reaction, which can result in the formation of higher-valence NOx.

C₂H₄ molecules which are post-dosed at 250 K to adlayers consisting of ¹⁸O and NO do not have strong interactions with either the NO or the ¹⁸O atoms. In particular, interactions which may result in the formation of new surface species that are intermediates for N₂ production appear to be absent. However, C₂H₄ is oxidized to C¹⁸O₂ by ¹⁸O atoms at higher annealing temperature. This reaction scavenges surface ¹⁸O atoms quickly, and the adsorption of NO molecules on step sites is therefore quickly restored. As a consequence, NO dissociation on steps proceeds very effectively, giving rise to N₂ desorption which closely resembles that following only NO exposure on a clean Pt(3 3 2), both in peak intensity and desorption temperature. It is concluded that the presence of ¹⁸O₂ in the selective catalytic reduction (SCR) of NO with C₂H₄ on the surface of Pt(3 3 2) does not play a role of activating reactants.     

Defect induced surface chemistry: A comparison of the adsorption and thermal decomposition of C2H4 on Rh{111} and Rh{331}

The adsorption and thermal decomposition of C₂H₂ on Rh{111} is compared to the atomically stepped Rh{331} surface over a temperature range of 300 to 800 K. Using X-ray photoelectron spectroscopy (XPS) we find that the C 1s spectra as a function of C₂H₄ exposure exhibit a shift in binding energy (E_b) from 283.5 eV at 1 L C₂H₄ exposure on both surfaces to 283.8 eV on Rh{33 and to 284.1 eV on Rh{111} at saturation coverage (4 L). Careful analysis of the C 1s E_b value and full width at half maximum as a function of surface temperature after a 10 L exposure of C₂H₄ at 300 K reveals that a species consistent with a C₂H adsorbate composition is formed between 400 and 450 K on Rh{111}. This species is also observed on Rh{331} although at the lower temperature of 375 K. Computer peak deconvolution of the C 1s spectra between 500 and 700 K suggests that a CH_ads or C_ads surface fragment is formed and increases in concentration at the expense of the C₂H species as the surface temperature increases. Above 750 K a graphite overlayer is formed on both surfaces. This overlayer, however, exhibits a low degree of carbon π-character bonding on Rh{331}. The adsorption and decomposition mechanisms suggest that the 300 K C₂H₄ adsorbate on Rh{331} is ethylidyne and that the stepped surface is more thermally reactive than the flat Rh{111} surface.     

DFT modeling of the hydrolysis of isocyanic acid over the TiO2 anatase (1 0 1) surface: Adsorption of HNCO species

The nature of the interaction of isocyanic acid (HNCO) with the active centers at the ideal anatase TiO₂ (1 0 1) surface were studied using ab initio density functional theory (DFT) method with a cluster model. Two types of adsorption of isocyanic acid are found to be likely at (1 0 1) surface – dissociative and molecular adsorption. Only molecular adsorption of HNCO leads to the direct weakening and further splitting of the NC bond, which is a necessary step for the hydrolysis of isocyanic acid. During molecular adsorption of HNCO, an energetically stable intermediate surface complex is created with an adsorption energy of −1.33 eV, in which the HNCO skeleton is changing due to new strong bonds between C–O_s and N–Ti_s. Based on the existence of this intermediate complex a probable reaction pathway for the hydrolysis of HNCO over the ideal anatase (1 0 1) surface was developed. A surface oxygen vacancy was formed after the decomposition of the intermediate complex and CO₂ desorption. Afterwards, water adsorbs at the oxygen vacancy site and NH₃ is successively formed. The HNCO hydrolysis over TiO₂ was found to be energetically favorable with global energy gain of about −2.08 eV.