Neutron Spectroscopy Evidence for a Possible Magnetic-Field-Induced Gapless Quantum-Spin-Liquid Phase in a Kitaev Material α-RuCl3

As one of the most promising Kitaev quantum-spin-liquid（QSL） candidates,α-RuCl₃ has received a great deal of attention.However,its ground state exhibits a long-range zigzag magnetic order,which defies the QSL phase.Nevertheless,the magnetic order is fragile and can be completely suppressed by applying an external magnetic field.Here,we explore the evolution of magnetic excitations of α-RuCl₃ under an in-plane magnetic field,by carrying out inelastic neutron scattering measu...     

High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching

An atomic-level controlled etching(ACE)technology is invstigated for the fabrication of recessed gate AlGaN/GaN high-electron-mobility transistors(HEMTs)with high power added efficiency.We compare the recessed gate HEMTs with conventional etching(CE)based chlorine,Cl₂-only ACE and BCl³/Cl₂ACE,respectively.The mixed radicals of BCl₃/Cl₂were used as the active reactants in the step of chemical modification.For ensuring precise and controllable etching depth and low etching damage,the kinetic energy of argon ions was accurately controlled.These argon ions were used precisely to remove the chemical modified surface atomic layer.Compared to the HEMTs with CE,the characteristics of devices fabricated by ACE are significantly improved,which benefits from significant reduction of etching damage.For BCl₃/Cl₂ACE recessed HEMTs,the load pull test at 17 GHz shows a high power added efficiency(PAE)of 59.8%with an output power density of 1.6 W/mm at Vd=10 V,and a peak PAE of 44.8%with an output power density of 3.2 W/mm at Vd=20 V in a continuous-wave mode.     

Thermoluminescence and optically stimulated luminescence disadvantages of α-Al2O3:C crystal grown by the temperature gradient technique

Recently, α-Al₂O₃:C crystal with highly sensitive thermoluminescence (TL) and optically stimulated luminescence (OSL) has been successfully grown by the temperature gradient technique. This paper investigates the heating rate dependence of TL sensitivity, light-induced fading of TL signals and thermal stability of OSL of α-Al₂O₃:C crystals. As the heating rate increases, the integral TL response decreases and the dosimetric glow peak shifts to higher temperatures in α-Al₂O₃:C crystals. Light-induced fading of TL increases with the irradiation dose, and TL response decreases as the exposure time increases, especially in the first 15 minutes. With the increasing intensity of the exposure light, the TL fading of α-Al₂O₃:C crystal increases sharply. The OSL response of as-grown α-Al₂O₃:C crystal is quite stable below 373 K and decreases sharply for higher temperatures.     

Mott Transition and Superconductivity in Quantum Spin Liquid Candidate NaYbSe_2

The Mott transition is one of the fundamental issues in condensed matter physics,especially in the system with antiferromagnetic long-range order.However,such a transition is rare in quantum spin liquid(QSL) systems without long-range order.Here we report the experimental pressure-induced insulator to metal transition followed by the emergence of superconductivity in the QSL candidate NaYbSe₂ with a triangular lattice of 4 f Yb³⁺ ions.Detail analysis of transport properties...     

RAMAN SCATTERING OF α-ET3(ReO4)2 CHARGE-TRANSFER SALT

We describe the results of Haman studies on C=C stretch modes in α-ET₃(ReO₄)₂ charge-transfer salt with the incident laser beam polarised perpendicular and parallel to the large flat face of plate-like crystal. We have assigned central C=C stretch mode at 1454 cm^-1 and ring C=C stretch mode at 1470cm^-1. The change in ring C=C stretch vibration was observed at the metal-insulator transition of α-ET₃(ReO₄)₂ on warming due to the distortion of the ET molecules.     

CRYSTALLINE CARBON NITRIDE THIN FILMS DEPOSITED BY MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION

The crystalline carbon nitride thin films have been prepared on Si (100) substrates using microwave plasma chemical vapor deposition technique. The experimental X-ray diffraction pattern of the films prepared contain all the strong peaks of α-C₃N₄ and β-C₃N₄, but most of the peaks are overlapped.The films are composed of α-C₃N₄ and β-C₃N₄. The N/C atomic ratio is close to the stoichiometric value 1.33. X-ray photoelectron spectroscopic analysis indicated that the binding energies of C 1s and N 1s are 286.43eV and 399.08 eV respectively. The shifts are attributed to the polarization of C-N bond. Both observed Raman and Fourier transform infrared spectra were compared with the theoretical calculations. The results support the existence of C-N covalent bond in α- and β-C₃N₄ mixture.     

Recent progress on magnetic-field studies on quantum-spin-liquid candidates

Quantum spin liquids(QSLs) represent a novel state of matter in which quantum fluctuations prevent the conventional magnetic order from being established, and the spins remain disordered even at zero temperature. There have been many theoretical developments proposing various QSL states. On the other hand, experimental movement was relatively slow largely due to limitations on the candidate materials and difficulties in the measurements. In recent years, the experimental progress has been accelerated. In this topical review, we give a brief summary of experiments on the QSL candidates under magnetic fields. We arrange our discussions by two categories: i) Geometrically-frustrated systems, including triangularlattice compounds YbMgGaO_4 and YbZnGaO_4, κ-(BEDT-TTF)_2 Cu_2(CN)_3, and EtMe_3 Sb[Pd(dmit)_2]_2, and the kagom′e system ZnCu_3(OH)_6 Cl_2; ii) the Kitaev material α-RuCl_3. Among these, we will pay special attention to α-RuCl_3, which has been intensively studied by ours and other groups recently. We will present evidence that both supports and rejects the QSL ground state for these materials, based on which we give several perspectives to stimulate further research activities.     

Tuning of the Magnetic Damping Parameter by Varying Cr Composition in Fe_(1-x)Cr_x Alloy

We investigate the magnetic damping parameter of Fe_1-xCr_x thin films using the time-resolved magneto-optical Kerr effect technique.It is demonstrated that the overall effective damping parameter is enhanced with the increasing Cr concentration.The effective damping at high field α₀ is found to be significantly enhanced when increasing the Cr concentration with the α₀=0.159 in the Fe₄₅Cr₅₅ enhanced by 562% compared with that of α     

CALCULATION OF THE FINE STRUCTURE OF OXYGEN-LIKE IONS USING THE POLARIZATION POTENTIAL FUNCTION

We have calculated the forbidden transition energies and magnetic dipole transition probabilities of 2s²2p⁴(³P₁－³P₂) and 2s²2p⁴ (³P₀－³P₁) of oxygen-like isoelectronic sequences (Z=10－32) by a method of polarization potential correction. The transition energies show good agreement with experiment and are much better than the calculations in the literature. These results also illustrate that it is feasible to use the dipole expansion of the polarization potential to deal with some dynamic and non-dynamic effects in the central field approach. The relation of polarizability and cut-off radius with atomic number is discussed. We also give the fitted formula between the polarizability α₁ and atomic number Z as α₁=0.73429-9.56644×10^-4Z+7.43016×10^-5Z^{2-2.53298×10-6Z3+2.08306×10-8Z4.}     

Enhanced mobility of MoS2 field-effect transistors by combining defect passivation with dielectric-screening effect

A facile method of combining the defect engineering with the dielectric-screening effect is proposed to improve the electrical performance of MoS₂ transistors. It is found that the carrier mobility of the transistor after the sulfur treatment on the MoS₂ channel is greatly enhanced due to the reduction of the sulfur vacancies during vulcanization of MoS₂.Furthermore, as compared to those transistors with HfO2 and SiO2 as the gate dielectric, the Al2O3-gate dielectric MoS₂ FET shows a better electrical performance after the sulfur treatment, with a lowered subthreshold swing of 179.4 m V/dec,an increased on/off ratio of 2.11 × 10⁶, and an enhanced carrier mobility of 64.74 cm²/V·s(about twice increase relative to the non-treated MoS₂ transistor with SiO2 as the gate dielectric). These are mainly attributed to the fact that a suitable k-value gate dielectric can produce a dominant dielectric-screening effect overwhelming the phonon scattering, increasing the carrier mobility, while a larger k-value gate dielectric will enhance the phonon scattering to counteract the dielectricscreening effect, reducing the carrier mobility.     

4.2 GeV α-^12C Elastic Scattering Based on α-Particle Model

Based on the α-particle model of ^12C nucleus, the differential cross sections for α-^12C elastic scattering at incident energy of 4.2 GeV have been calculated within the framework of Glauber multiple scattering theory. The results show that the main features of the measured angular distribution of the cross sections can be reasonably described. The parameterized α-α scattering amplitude, which is the basic input to construct the α-^12 C scattering Glauber amplitude in the a-particle model, is obtained by fitting the α-α scattering data.     

The Φp bound state in the unitary coupled-channel approximation

The strong attractive interaction of the Φ meson and the proton has recently been reported by the ALICE Collaboration.The corresponding scattering length f₀ is given as Re(f₀)=0.85±0.34(stat)±0.14(syst) and Im(f₀)=0.16±0.10(stat)± 0.09(syst) fm.The fact that the real part is significant in contrast to the imaginary part indicates a dominant role of elastic scattering,whereas the inelastic process is less important.In this work,such scattering processes are inspec...     

Spin current transmission in Co1-xTbx films

We investigate the spin to charge conversion phenomena in Y₃Fe₅O₁₂/Pt/Co_1-xTb_x/Pt multilayers by both the spin pumping and spin Seebeck effects.We find that the spin transport efficiency is irrelevant to magnetization states of the perpendicular magnetized Co;Tb;films,which can be attributed to the symmetry requirement of the inverse transverse spin Hall effect.Furthermore,the spin transmission efficiency is significantly affected by the film concentration,revealing the dominant role of extrinsic impurity scattering caused by Tb impurity.The present results provide further guidance for enhancing the spin transport efficiency and developing spintronic devices.     

Possible Tricritical Behavior and Anomalous Lattice Softening in van der Waals Itinerant Ferromagnet Fe_3GeTe_2 under High Pressure

We present a high-pressure study of van der Waals ferromagnetic metal Fe₃GeTe₂ through electrical transport and Raman scattering measurements in diamond anvil cells at pressures up to 22.4 GPa.Upon compression,the ferromagnetic transition temperature P_c manifested by a kink in resistance curve decreases monotonically and becomes undiscernable around P_c = 10 GPa,indicative of suppression of the itinerant ferromagnetism.Meanwhile,by fitting the low tempe...     

Raman scattering studies on manganese ion-implanted GaN

This paper reports that the Raman spectra have been recorded on the metal-organic chemical vapour deposition epitaxially grown GaN before and after the Mn ions implanted. Several Raman defect modes have emerged from the implanted samples. The structures around 182 cm^-1 modes are attributed to the disorder-activated Raman scattering, whereas the 361 cm^-1 and 660 cm^-1 peaks are assigned to nitrogen vacancy-related defect scattering. One additional peak at 280 cm^-1 is attributed to the vibrational mode of gallium vacancy-related defects and/or to disorder activated Raman scattering. A Raman-scattering study of lattice recovery is also presented by rapid thermal annealing at different temperatures between 700 °C and 1050 °C on Mn implanted GaN epilayers. The behaviour of peak-shape change and full width at half maximum (FWHM) of the A₁(LO) (733 cm^-1) and E^H₂ (566 cm^-1) Raman modes are explained on the basis of implantation-induced lattice damage in GaN epilayers.     

Tuning of Magnetic Properties of α-RuCl3 Single Crystal by Cr Doping

We study the influence of Cr doping on magnetic properties of α-RuCl₃ single crystals in detail.With increasing Cr content,the c-axial lattice parameter increases gradually,implying that the Cr doping may weaken the interlayer interactions.The magnetism of Ru_1-xCr_xCl₃ single crystals evolves from a long-range AFM order to a possible spin-glass state with Cr doping.The appearance of a possible spin-glass state can be explained by the introduction of FM ...     

RAMAN STUDIES ON THE PHASE TRANSITIONS OF (NH4)2SnBr6 CRYSTALS

We report here the structural phase transitions of the crystal (NH₄)₂SnBr₆ investigated by Raman scattering at temperatures ranging from 10K to room temperature. Two phase transitions occurring at 150 and ll0K are found. Based on the group theory, it is proposed that the crystal undergoes a second-order phase transition at 150 K, resulting from a ferro-distortion with symmetry Γ⁴⁺. The change of structure is confirmed to be O⁵_h to C⁵_4h, which is assigned to the rotary of [SnBr₆]^2- ion groups around the axis of <001>. Furthermore the crystal undergoes an order-disorder phase transition at ll0K which is related with the reorientation of the ammonium ion group. It is noticed that the change of the vibrational modes at 77K does not show any phase transition.     

Estimation of radiative capture 13B(n,γ0+1)14B reaction rate in the modified potential cluster model

We discuss current attempts to employ the modified potential cluster model to describe the available experimental data on the ¹³B(n,γ₀₊₁)¹⁴B total cross-sections.The estimated results of the M1 and E1 transitions from the n¹³B scattering states to the ground and first excited states of ¹⁴B are presented.The 1^st resonance at E_x=1.275MeV(1⁺) is revealed in both the cross-section and reaction rate.Within the var...     

Microstructured hydroxyl environments and Raman spectroscopy in selected basic transition-metal halides

Raman vibrational spectra of the selected basic (hydroxyl OH and deuteroxyl OD) transition-metal halides, geometrically frustrated material series α-, β-, γ-Cu₂(OH)₃Cl, α-Cu₂(OH)₃Br, β-Ni₂(OH)₃Cl, β-Co₂(OH)₃Cl, β-Co₂(OH)₃Br, γ-Cu₂(OD)₃Cl, and β-Co₂(OD)₃Cl are measured at room temperature and analysed to investigate the relationship between the microstructured OH environments and their respective Raman spectra. Among these selected samples, the last two are used to determine the OH stretching vibration region (3600 cm^-1—3300 cm^-1) and OH bending vibration region (1000 cm^-1—600 cm^-1) of OH systems in the spectra. Through the comparative analysis of the distances d(metal—O), d(O—halogen), and d(OH), the strong metal—O interaction and trimeric hydrogen bond (C_3v, C_s or C₁ symmetry) are found in every material, but both determine simultaneously an ultimate d(OH), and therefore an OH stretching vibration frequency. According to the approximately linear relationship between the OH stretching vibration frequency and d(OH), some unavailable d(OH) are guessed and some doubtful d(OH) are suggested to be corrected. In addition, it is demonstrated in brief that the OH bending vibration frequency is also of importance to check the more detailed crystal microstructure relating to the OH group.     

RAMAN STUDY ON $X_i^-$(Pb) CENTERS IN SINGLE CRYSTALS OF ALKALI HALIDES DOPED WITH LEAD

Low frequency modes were observed in a series of alkali halides doped with lead after X-irradiation at 77K. The peak positions of the Raman signals are at 34cm^-1 for NaCl:Pb²⁺, 30cm^-1 for KCl:Pb²⁺,28cm^-1 for RbCl:Pb²⁺ and 22cm^-1 for KBr:Pb²⁺. They are assigned to the inelastic light scattering caused by the local vibration of X^-_i (Pb⁺) center, which consists of an interstitial halogen ion stabilized by a substitutional ion Pb⁺ . Polarized Raman measurements and Behavior Typer(BT) analysis show that the symmetry of the X^-_i (Pb⁺) center belongs to the point group C_3v A structure model of the X^-_i (Pb⁺) center is proposed based on the Raman data and the result of BT analysis.