Spin Hall Magnetoresistance in Pt/BiFeO3 Bilayer

Multiferroic materials are general antiferromagnets with negligibly small net magnetization, which strongly limits their magnetoelectric applications in spintronics. Spin Hall magnetoresistance(SMR) is sensitive to the orientation of the Néel vector, which can be applied for the detection of antiferromagnetic states. Here, we apply SMR on the unique room-temperature antiferromagnetic multiferroic material BiFeO₃(BFO). The angular dependence of SMR in a bilayer of epitaxial BFO(001) an...     

Spin Hall Magnetoresistance and Spin Nernst Magnetothermopower in a Rashba System: Role of the Inverse Spin Galvanic Effect

In ferromagnet/normal‐metal bilayers, the sensitivity of the spin Hall magnetoresistance and the spin Nernst magnetothermopower to the boundary conditions at the interface is of central importance. In general, such boundary conditions can be substantially affected by current‐induced spin polarizations. In order to quantify the role of the latter, we consider a Rashba two‐dimensional electron gas with a ferromagnet attached to one side of the system. The geometry of such a system maximizes the effect of current‐induced spin polarization on the boundary conditions, and the spin Hall magnetoresistance is shown to acquire a non‐trivial and asymmetric dependence on the magnetization direction of the ferromagnet.     

Tunable Magnetoresistance in InAs/Ferromagnet Hybrid Devices

Metal-oxide semiconductor field-effect transistors with ferromagnetic source- and drain-electrodes are fabricated on InAs. Tailored micromagnetic behavior of the ferromagnetic electrodes is achieved by use of a specific shape as well as in-plane external magnetic fields and is measured by magnetic-force microscopy. The field-effect in transistors with electrodes of defined magnetization is determined as a function of the gate voltage. The amplitude and the sign of abrupt resistance changes observed at points of irreversible switching of the ferromagnetic contacts' magnetization can be tuned by the gate voltage providing evidence for spin-polarized transport.     

Spin Hall effect in noncommutative coordinates

A semiclassical constrained Hamiltonian system which was established to study dynamical systems of matrix valued non-Abelian gauge fields is employed to formulate spin Hall effect in noncommuting coordinates at the first order in the constant noncommutativity parameter θ. The method is first illustrated by studying the Hall effect on the noncommutative plane in a gauge independent fashion. Then, the Drude model type and the Hall effect type formulations of spin Hall effect are considered in noncommuting coordinates and θ deformed spin Hall conductivities which they provide are acquired. It is shown that by adjusting θ different formulations of spin Hall conductivity are accomplished. Hence, the noncommutative theory can be envisaged as an effective theory which unifies different approaches to similar physical phenomena.     

Attenuation of Spin Precession in Manganite/Normal Metal Heterostructures

Physics of the Solid State - Abstract—Temperature dependence of attenuation of magnetic spin precession in two-layer structures with a Pt top layer based on a La0.7Sr0.3MnO3 (LSMO) epitaxial...     

Persistence of Spin Edge Currents in Disordered Quantum Spin Hall Systems

For a disordered two-dimensional model of a topological insulator (such as a Kane-Mele model with disordered potential) with small coupling of spin invariance and time-reversal symmetry breaking terms (such as a Rashba spin-orbit coupling and a Zeeman term), it is proved that the spin edge currents persist provided there is a spectral gap and the spin Chern numbers are well-defined and non-trivial. These are sufficient conditions for being in the quantum spin Hall phase. The result materializes the general philosophy that topological insulators are topologically non-trivial bulk systems with persistent edge or surface currents.     

Spin Hall effect in nonmagnetic conductors under the classical Hall conditions

The spin Hall effect—the excitation of a spin flux by an electric current normal to it—is considered in a paramagnetic sample in disregard of the spin-orbit coupling in the classical Hall effect case, when the Pauli spin polarization is induced by the magnetic field H ₀ normal to the electric current.     

Large Magnetoresistance Based on Double Spin Filter Tunnel Barriers

We propose and theoretically analyse a double magnetic tunnel device that takes advantages of the spin filter effect. Two magnetic tunnel barriers are formed by different spin filters which have different barrier heights. The magnetoresistance of the device is low （high） when the magnetic moments of the two spin filters are parallel （antiparallel）. We present a theoretical calculation of the magnetoresistance based on electric tunnel effect. In addition, the effect of the difference barrier heights and exchange splitting energies between the two spin filters are also analysed in detail. The numerical results show that the spin filter in this configuration gives a magnetoresistance larger than that with standard magnetic tunnel junctions.     

Spin physics in Jefferson Lab's Hall C

Jefferson Lab's Hall C is highly flexible and well suited to take advantage of the facility's polarized electron beam. Using standard and custom equpment, a number of experiments have been staged here studying spin dependent observables and investigating allarge range of physical properties. More promising measurements are planned.     

Spin Hall effect in doped semiconductor structures

In this Letter we present a microscopic theory of the extrinsic spin Hall effect based on the diagrammatic perturbation theory. Side-jump and skew-scattering contributions are explicitly taken into account to calculate the spin Hall conductivity, and we show that their effects scale as sigma(xy)SJ/sigma(xy)SS approximately (h/tau)/epsilonF, with tau being the transport relaxation time. Motivated by recent experimental work we apply our theory to n- and p-doped 3D and 2D GaAs structures, obtaining sigma(s)/sigma(c) approximately 10(-3)-10(-4), where sigma(s(c)) is the spin Hall (charge) conductivity, which is in reasonable agreement with the recent experimental results of Kato et al. [Science 306, 1910 (2004)] in n-doped 3D GaAs system.     

Spin order in paired quantum Hall states

We consider quantum Hall states at even-denominator filling fractions, especially nu=5/2, in the limit of small Zeeman energy. Assuming that a paired quantum Hall state forms, we study spin ordering and its interplay with pairing. We give numerical evidence that at nu=5/2 an incompressible ground state will exhibit spontaneous ferromagnetism. The Ginzburg-Landau (GL) theory for the spin degrees of freedom of paired Hall states is a perturbed CP2 model. We compute the coefficients in the GL theory by a BCS Stoner mean-field theory for coexisting order parameters, and show that even if repulsion is smaller than that required for a Stoner instability, ferromagnetic fluctuations can induce a partially or fully polarized superconducting state.     

Enhanced Spin Injection into ZnO Semiconductor Measured by Magnetoresistance

We prepare 2× （NiFe/CoZnO）/ZnO/（CoZnO/Co）×2 spin valve structures used for spin injection by sputtering and photolithography. In the junctions, the free magnetic layer 2× （NiFe/CoZnO） and the fixed magnetic layer （CoZnO/Co） × 2 are used to realize the spin valve functions in the external switch magnetic field. Since the wide gap semiconductor ZnO layer is located between the two magnetic semiconductor layers CoZnO, the electrical ,spin injection from the magnetic semiconductor CoZnO into the non-magnetic semiconductor ZnO is realized. Based on the measured magnetoresistance and the Schmidt model, the spin polarization ratio in the ZnO semiconductor is deduced to be 11.7% at 90K and 7.0% at room temperature, respectively.     

Tunable anomalous Hall effect in a nonferromagnetic system

We measure the low-field Hall resistivity of a magnetically doped two-dimensional electron gas as a function of temperature and electrically gated carrier density. Comparing these results with the carrier density extracted from Shubnikov-de Haas oscillations reveals an excess Hall resistivity that increases with decreasing temperature. This excess Hall resistivity qualitatively tracks the paramagnetic polarization of the sample, in analogy to the ferromagnetic anomalous Hall effect. The data are consistent with skew scattering of carriers by disorder near the crossover to localization.     

Bias Voltage Controlled Positive Magnetoresistance of Fe0.05-C0.95/Si Heterostructures

Fe-doped amorphous carbon films of about lOOnm in thickness are deposited on n-type silicon substrates by pulsed laser deposition （PLD）, and positive magnetoresistance （MR） is observed for these Fe-doped amorphous carbon/n-Si heterostructures under current-perpendicular-to-plane configuration at forward bias. Two MR peaks are observed in the temperature range 40-120 K and the positive MR varies with applied bias voltage. This bias voltage controlled MR may be related to the maguetic-field-controlled freeze out effect and recombination through the deep trapping states in the Fe-doped carbon films.     

GaAs自旋注入及巨霍尔效应的研究

在自旋电子学研究中,一般以超晶格结构、自旋阀、隧道结来实现,另一种自旋注入典型方法是稀磁半导体材料,如GaMnAs,本文通过颗粒膜实现自旋注入,利用磁控溅射法将Fe颗粒嵌入GaAs阵体上,制备了(GaAs)₁₉Fe₈₁颗粒膜样品,在室温条件下观测到15 μΩ ·cm最大饱和霍尔电阻率,该效应比纯铁的饱和霍尔电阻率大了一个数量级,成功地实现了自旋注入. 关键词： 自旋注入 颗粒膜 巨霍尔效应     

Spin Hall effect of light in metallic reflection

We report the first measurement of the spin Hall effect of light (SHEL) on an air-metal interface. The SHEL is a polarization-dependent out-of-plane shift on the reflected beam. For the case of metallic reflection with a linearly polarized incident light, both the spatial and angular variants of the shift are observed and are maximum for -45°/45° polarization, but zero for pure s and p polarization. For an incoming beam with circular polarization states however, only the spatial out-of-plane shift is present.     

Magnetoresistance and Hall effect in La0.8Sr0.2MnO3

A comparative study of the longitudinal ρ _xx and transverse ρ _xy resistivities and magnetic susceptibility χ _ac of La_0.8Sr_0.2MnO₃ single crystals and ceramic samples has been conducted in a wide range of temperatures T=1.7–370 K and magnetic fields, H=0–13.6 T. It turned out that the relation ρ _xy ∼ρ _xx , which is expected to hold in the case of carrier scattering by magnetic fluctuations, applies to the single crystals. In polycrystals, an additional H-dependent contribution to the resistivity tentatively attributed to plane (near grain boundaries) and bulk “defects” of the magnetic sublattice has been detected. The scattering of carriers by these defects does not make a notable contribution to the anomalous Hall effect and magnetic susceptibility χ _ac. As a result, the curve of ρ _xy versus ρ _xx seems to be steeper than a linear dependence. Under the assumption that the materials under investigation are metals with constant carrier concentrations, the conductivity σ=1/ρ _xx due to the critical magnetic scattering calculated in the molecular field approximation reproduces the main features of experimental data, namely, the drop in the amplitude and shift of the resistivity peak near the Curie point with increasing magnetic field H and also a relatively slow change in the derivative dσ/dH with increasing temperature in the region T⩽T _C . The large hole concentration of about two per unit cell derived from Hall measurements indicates that carriers of opposite signs can coexist in these materials. Zh. éksp. Teor. Fiz. 116, 671–683 (August 1999)     

Quantum Oscillations of Magnetoresistance in HgCdTe/HgTe/HgCdTe Heterostructures with Inverted Band Spectrum

Physics of the Solid State - The effects observed in the Shubnikov–de Haas oscillation regime in the HgCdTe/HgTe/HgCdTe heterostructure with a wide (20.3 nm) HgTe quantum well with an...