Metal–Insulator Phase Transition in Tungsten-Doped Vanadium Dioxide Thin Films

Physics of the Solid State - The electrical conductivity of thin polycrystalline V(1 – x)WxO2 has been studied in a wide temperature range, which covers the regions of both...     

Metal–Insulator Phase Transition in Iron-Doped Vanadium Dioxide Thin Films

Physics of the Solid State - The electrical conductivity of polycrystalline V(1 – x)FexO2 films has been investigated in a wide temperature range, which covers both the...     

Metal–Insulator Phase Transition in Thin Films of a Nickel-Doped Vanadium Dioxide

Physics of the Solid State - The electrical conductivity of thin polycrystalline VNixO2 films has been studied in a wide range of temperatures, which covers the regions of both metallic and...     

Detection of the Ferromagnetic Properties of Si:P in the Region of an Insulator–Metal Phase Transition

JETP Letters - The ferromagnetic properties of Si:P in the region of a concentration insulator–metal phase transition at liquid helium temperatures have been detected and studied. To...     

Field-Induced Metal–Insulator Transition in β-EuP_3

Metal-insulator transition(MIT) is one of the most conspicuous phenomena in correlated electron systems.However such a transition has rarely been induced by an external magnetic field as the field scale is normally too small compared with the charge gap.We present the observation of a magnetic-field-driven MIT in a magnetic semiconductor β-EuP_3.Concomitantly,we find a colossal magnetoresistance in an extreme way:the resistance drops billionfold at 2K in a magnetic field less than 3T.We ascribe this striking MIT as a field-driven transition from an antiferromagnetic and paramagnetic insulator to a spin-polarized topological semimetal,in which the spin configuration of Eu~(2+)cations and spin-orbital coupling play a crucial role.As a phosphorene-bearing compound whose electrical properties can be controlled by the application of field,β-EuP_3 may serve as a tantalizing material in the basic research and even future electronics.     

Superconductor–Insulator Transition in NbTiN Films

Experimental results indicating a direct disorder-induced superconductor–insulator transition in NbTiN thin films have been reported. It has been shown that an increase in the resistance per square in the normal state is accompanied by the suppression of the critical temperature of the superconducting transition T_c according to the fermion mechanism of suppression of superconductivity by disorder. At the same time, the temperature of the Berezinskii–Kosterlitz–Thouless transition is completely suppressed at a nonzero critical temperature and, then, the ground state changes to insulating, which is characteristic of the boson model of suppression of superconductivity by disorder. It has been shown that the temperature dependences of the resistance of insulating films follow the Arrhenius activation law.     

Gaseous Metal and the Problem of Vapor–Liquid (Insulator–Metal) Transition in Metal Vapors

Journal of Experimental and Theoretical Physics - We consider the main properties of a gaseous metal, viz., the state of metal vapor adjoining the vapor–fluid transition binodal. The gaseous...     

Rigorous Spectral Analysis of the Metal–Insulator Transition in a Limit-Periodic Potential

We consider the limit-periodic Jacobi matrices associated with the real Julia sets of f (z)=z ²– for which [2, ) can be seen as the strength of the limit-periodic coefficients. The typical local spectral exponent of their spectral measures is shown to be a harmonic function in decreasing logarithmically from 1 to 0.     

Holographic Insulator/Superconductor Phase Transition in Born–Infeld Electrodynamics

We study holographic insulator/superconductor phase transition in the framework of Born–Infeld electrodynamics both numerically and analytically. First we numerically study the efects of the Born–Infeld electrodynamics on the phase transition, find that when the Born–Infeld parameter increases, the critical chemical potential keeps invariant but the gap frequency becomes larger. Then we employ the variational method for the Sturm–Liouville eigenvalue problem to study the phase transition analytically. The analytical results obtained are found to be consistent with the numerical results.     

Nonlinear Screening and the Metal–Insulator Transition in a Two-Dimensional Electron Gas

Russian Physics Journal - The density functional theory is used to study the nonlinear screening properties of a two-dimensional electron gas in a strong magnetic field. The Kohn-Sham equations for...     

Influence of Doping on the Mott Metal—Insulator Transition in Infinite Dimensions

We have studied the effect of hole-doping on the established scenerio of the first-order Mott metal-insulator transition (MIT) at half-filling using dynamical mean-field theory and exact diagonalization technique.The mott insulator state is changed into metallic state immediately as holes are doped into the system.The latter is expected to be Fermi liquid.The previously found unanalytical structure of MIT no longer exists for doping as small as 2 percent.We compare our results with that obtained from Gutzwiller approximation.     

Study of Transport Phenomenon in Amorphous RexSi1 – x Thin Films on the Both Sides of the Metal–Insulator Transition at Very Low Temperatures

Physics of the Solid State - In this work, we study the electrical conductivity behaviors on the both sides of the metal-insulator transition (MIT) in RexSi1 – x amorphous...     

Infrared diode laser spectroscopy of the ν3 fundamental band of the PO2 free radical

The asymmetric stretching fundamental of the PO₂ free radical in its ground electronic state has been measured between 1280 and 1360 cm⁻¹ using diode laser absorption spectroscopy. This new data set has been combined in a fit with an earlier, smaller infrared data set and with pure rotational transitions measured by microwave and laser magnetic resonance spectroscopies to provide a new set of parameters for the ground and ν₃ = 1 states of A₁ PO₂. These parameters can be used to calculate line positions in this band for transitions up to N = 50.     

Mechanisms of the Insulator—Metal Transition and Spin Crossover in CoO at High Pressure

JETP Letters - The effect of high pressure on the electronic characteristics of CoO is analyzed in the framework of the multielectron model of transition metal oxides. The specific features of spin...     

Reliability Characteristics of Diamond-Like Carbon as Gate Insulator for Metal–Insulator–Semiconductor Application

Physics of the Solid State - This study presents the reliability of diamond-like carbon (DLC) ultrathin films fabricated by DC magnetron sputtering as the gate dielectric layer in...     

Analysis of ν2, ν4 Infrared Hot Bands of SO3: Resolution of the Puzzle of the ν1 CARS Spectrum

Further analysis of the high-resolution (0.0015 cm⁻¹) infrared spectrum of ³²S¹⁶O₃ has led to the assignment of more than 3100 hot band transitions from the ν₂ and ν₄ levels to the states 2ν₂ (l=0), ν₂+ν₄ (l=±1), and 2ν₄ (l=0,±2). These levels are strongly coupled via Fermi resonance and indirect Coriolis interactions to the ν₁ levels, which are IR-inaccessible from the ground state. The unraveling of these interactions has allowed the solution of the unusual and complicated structure of the ν₁ CARS spectrum. This has been accomplished by locating over 400 hot-band transitions to levels that contain at least 10% ν₁ character. The complex CARS spectrum results from a large number of avoided energy-level crossings between these states. Accurate rovibrational constants are deduced for all the mixed states for the first time, leading to deperturbed values of 1064.924(11), 0.000 840 93(64), and 0.000 418 19(58) cm⁻¹ for ν₁, α₁^B, and α₁^C, respectively. The uncertainties in the last digits are shown in parentheses and represent two standard deviations. In addition, new values for some of the anharmonicity constants have been obtained. Highly accurate values for the equilibrium rotational constants B_e and C_e are deduced, yielding independent, nearly identical values for the SO r_e bond length of 141.734 03(13) and 141.732 54(18) pm, respectively.     

Electronic Instability of Kagome Metal CsV3Sb5 in the 2×2×2 Charge Density Wave State

Recently discovered kagome metals AV₃Sb₅(A = K,Rb,and Cs) provide an ideal platform to study the correlation among nontrivial band topology,unconventional charge density wave(CDW),and superconductivity.The evolution of electronic structures associated with the change of lattice modulations is crucial for understanding of the CDW mechanism,with the combination of angle-resolved photoemission spectroscopy(ARPES)measurements and density functional theory calculations,we invest...     

Effect of High Resistance Phases on Metal—Insulator Transition of La0.67Ca0.33MnO3

The temperature dependence of resistivity ρ of YSZ doping composite of (1-x) La0.67Ca0.33MnO3 xYSZ and Y2O3 doping composite of (1-y) La0.67MnO3 yY2O3 is investigated,respectively,in a temperature range 77-300K,where the YSZ represents yttria-stabilized zirconia(8mol%Y2O3 92mol% ZrO2).Experimental results show that the YSZ doping level has important effects on both the metal-insulator(M-I) transition temperatures and zero field resistivity of the composites of (1-x) La0.67Ca0.33MnO3 xYSZ.However,the Y2O3 doping level has little effect on the M-I transition temperatures and the zero field resistivity of (1-y)La0.67Ca0.33MnO3 yY2O3 only increases slightly.The difference between the two types of composites may mainly results from the different distribution of high resistance phases at the grain boundaries and /or surfaces of La0.67Ca0.33MnO3 grains rather than the substitution of La^3 ions with Y^3 ions.     

First Gas Phase Infrared Spectroscopy of F2BOH: High-Resolution Study of the ν8 and ν9 Bands

For the first time the infrared spectrum of F₂BOH in the gas phase has been observed. After optimizing the conditions for the synthesis we have been able to obtain high-resolution (2.4-3.3×10⁻³ cm⁻¹) infrared spectra in the ν₈, ν₉, and ν₄ regions with both natural and ¹¹B monoisotopic material. Analyses of the ν₈ (BF₂ out-of-plane bending) and ν₉ (OH torsion) fundamental bands located at 684.160 and 522.870 cm⁻¹, respectively, for F₂¹¹BOH are presented here. Existing J≤10 microwave transitions were combined with novel ground state combination differences with J≤55 formed from A-type (ν₄) and C-type (ν₈, ν₉) bands to yield substantially improved and extended ground state parameters. Using a standard Watson-type Hamiltonian, 8¹ and 9¹ upper state parameters were obtained by fitting about 2000 lines each with σ(fit) ca. 3.5×10⁻⁴ cm⁻¹. The 8¹ and 9¹ states both appear to be unperturbed, as indicated by the agreement of the ground and excited state centrifugal distortion constants.