Au island growth on a Si(1 1 1) vicinal surface

Au island nucleation and growth on a Si(1 1 1) 7 × 7 vicinal surface was studied by means of scanning tunneling microscopy. The surface was prepared to have a regular array of step bunches. Growth temperature and Au coverage were varied in the 255-430 °C substrate temperature range and from 1 to 7 monolayers, respectively. Two kinds of islands are observed on the surface: Au-Si reconstructed islands on the terraces and three-dimensional (3D) islands along the step bunches. Focusing on the latter, the dependence of island density, size and position on substrate temperature and on Au coverage is investigated. At 340 °C and above, hemispherical 3D islands nucleate systematically on the step edges.     

Adsorption and NiO(1 0 0) formation by atomic and molecular oxygen on Ni(1 1 0)

The structure of the ordered p(2 × 1) and p(3 × 1) phases of adsorbed oxygen as well as the formation of ultrathin NiO(1 0 0) layers on a Ni(1 1 0) single crystal are investigated by grazing scattering of fast hydrogen atoms. Via ion beam triangulation based on the detection of the number of emitted electrons, we obtain direct information on the structure of oxygen adsorbates and ultrathin nickel oxide layers. For oxidation using atomic instead of molecular oxygen, the gas exposure can be reduced by almost two orders of magnitude. We compare the experimental results with computer simulations based on classical projectile trajectories for grazing scattering of fast hydrogen atoms and test structure models for oxygen adsorbed on Ni(1 1 0) and NiO(1 0 0).     

Ethylene dissociation on flat and stepped Ni(1 1 1): A combined STM and DFT study

The dissociative adsorption of ethylene (C₂H₄) on Ni(1 1 1) was studied by scanning tunneling microscopy (STM) and density functional theory (DFT) calculations. The STM studies reveal that ethylene decomposes exclusively at the step edges at room temperature. However, the step edge sites are poisoned by the reaction products and thus only a small brim of decomposed ethylene is formed. At 500 K decomposition on the (1 1 1) facets leads to a continuous growth of carbidic islands, which nucleate along the step edges.DFT calculations were performed for several intermediate steps in the decomposition of ethylene on both Ni(1 1 1) and the stepped Ni(2 1 1) surface. In general the Ni(2 1 1) surface is found to have a higher reactivity than the Ni(1 1 1) surface. Furthermore, the calculations show that the influence of step edge atoms is very different for the different reaction pathways. In particular the barrier for dissociation is lowered significantly more than the barrier for dehydrogenation, and this is of great importance for the bond-breaking selectivity of Ni surfaces.The influence of step edges was also probed by evaporating Ag onto the Ni(1 1 1) surface. STM shows that the room temperature evaporation leads to a step flow growth of Ag islands, and a subsequent annealing at 800 K causes the Ag atoms to completely wet the step edges of Ni(1 1 1). The blocking of the step edges is shown to prevent all decomposition of ethylene at room temperature, whereas the terrace site decomposition at 500 K is confirmed to be unaffected by the Ag atoms.Finally a high surface area NiAg alloy catalyst supported on MgAl₂O₄ was synthesized and tested in flow reactor measurements. The NiAg catalyst has a much lower activity for ethane hydrogenolysis than a similar Ni catalyst, which can be rationalized by the STM and DFT results.     

The effects of annealing and growth temperature on the morphologies of Bi nanostructures on HOPG

We report on the growth of ultra-thin bismuth (Bi) films on the basal plane of highly ordered pyrolitic graphite (HOPG) substrates; we investigate the morphologies of films grown at room temperature and then annealed at high temperature, and the morphologies of Bi structures grown at high temperature. Films grown at room temperature nucleate flat islands on the HOPG terraces, and 1D nanorods from HOPG step edges, the islands and rods both have heights in the range 1–3 nm. During annealing, the flat islands break up into groups of aligned, ～ 2.5 nm tall rods. For films grown at high temperature, terrace nucleation is almost nonexistent, and 1D structures grow from step edges, with heights up to 30 nm. Finally, we observe rods with distinctively different morphologies corresponding to (110) and (111) orientations, and infer a surface energy driven Bi(110) to Bi(111) orientation transition. We speculate that the dominant mechanism for the reorientation is coalescence.     

Initial stages of oxidation of Cu(1 1 1)

Several surface analysis techniques were combined to study the initial stages of oxidation of Cu(1 1 1) surfaces exposed to O₂ at low pressure (<5 × 10⁻⁶ mbar) and room temperature. Scanning tunneling microscopy (STM) results show that the reactivity is governed by the restructuring of the Cu(1 1 1) surface. On the terraces, oxygen dissociative adsorption leads to the formation of isolated O adatoms and clusters weakly bound to the surface. The O adatoms are located in the fcc threefold hollow sites of the unrestructured terraces. Friedel oscillations with an amplitude lower than 5 pm have been measured around the adatoms. At step edges, surface restructuring is initiated and leads to the nucleation and growth of a two-dimensional disordered layer of oxide precursor. The electronic structure of this oxide layer is characterised by a band gap measured by scanning tunneling spectroscopy to be ∼1.5 eV wide. The growth of the oxide islands progresses by consumption of the upper metal terraces to form triangular indents. The extraction of the Cu atoms at this interface generates a preferential orientation of the interface along the close-packed directions of the metal. A second growth front corresponds to the step edges of the oxide islands and progresses above the lower metal terraces. This is where the excess Cu atoms extracted at the first growth front are incorporated. STM shows that the growing disordered oxide layer consists of units of hexagonal structure with a first nearest neighbour distance characteristic of a relaxed Cu-Cu distance (∼0.3 nm), consistent with local Cu₂O(1 1 1)-like elements. Exposure at 300 °C is necessary to form an ordered two-dimensional layer of oxide precursor. It forms the so-called “29” superstructure assigned to a periodic distorted Cu₂O(1 1 1)-like structure.     

Small Cu-clusters on ZnO(0 0 0 1)-Zn: Nucleation and annealing behavior

The formation of (1 1 1)-oriented Cu-clusters on ZnO(0 0 0 1)-Zn at room temperature is followed by in situ applied scanning tunneling microscopy. Kink-sites at step edges and especially the apexes of triangular ZnO-substrate terraces act as preferred nucleation sites. At room temperature the decay of small Cu-islands takes place on a time scale of minutes. Larger Cu-coverages lead to an ensemble of interconnected 3D-islands of uniform height separated by trenches down to the substrate. A disordered dislocation network is visible on top of the Cu-islands. Annealing leads to a piling up of the Cu-islands. An initially undisturbed ZnO-substrate in between the islands shows that there is no strong reaction between the Cu-clusters and the oxide at room temperature. A strong decrease of the adlayer coverage visible above the ZnO-substrate layer for annealing temperature above 570 K points to a partial entrenching of the islands into the oxide support and an alloy formation.     

Nanowedge island formation on Mo(1 1 0)

The deposition of ultrathin Fe films on the Mo(1 1 0) surface at elevated temperatures results in the formation of distinctive nanowedge islands. The model of island formation presented in this work is based on both experiment and DFT calculations of Fe adatom hopping barriers. Also, a number of classical molecular dynamics simulations were carried out to illustrate fragments of the model. The islands are formed during a transition from a nanostripe morphology at around 2 ML coverage through a Bales-Zangwill type instability. Islands nucleate when the meandering step fronts are sufficiently roughened to produce a substantial overlap between adjacent steps. The islands propagate along the substrate [0 0 1] direction due to anisotropic diffusion/capture processes along the island edges. It was found that the substrate steps limit adatom diffusion and provide heterogeneous nucleation sites, resulting in a higher density of islands on a vicinal surface. As the islands can be several layers thick at their thinnest end, we propose that adatoms entering the islands undertake a so-called “vertical climb” along the sides of the island. This is facilitated by the presence of mismatch-induced dislocations that thread to the sides of the islands and produce local maxima of compressive strain. Dislocation lines also trigger initial nucleation on the surface with 2-3 ML Fe coverage. The sides of the nanowedge islands typically form along low-index crystallographic directions but can also form along dislocation lines or the substrate miscut direction.     

Surface alloy formation,short-range order,and deuterium adsorption properties of monolayer PdRu/Ru(0 0 0 1) surface alloys

The formation and structure of monolayer PdRu/Ru(0 0 0 1) surface alloys and their adsorption properties with respect to deuterium adsorption were investigated by atomic resolution scanning tunneling microscopy and by temperature programmed desorption. Surface alloys, prepared by deposition of up to one monolayer of Pd and flash annealing to 1150 K show (i) negligible loss of Pd by desorption or diffusion into the Ru bulk during this procedure and (ii) dominant phase separation into 2D Pd and Ru islands, in contrast to the random distribution in PtRu/Ru(0 0 0 1) surface alloys [H.E. Hoster, A. Bergbreiter, P.M. Erne, T. Hager, H. Rauscher, R.J. Behm, Phys. Chem. Chem. Phys. 10 (2008) 3812]. 2D short-range order parameters and the abundance of specific adsorption ensembles were evaluated for different Pd contents, effective pair interaction (EPI) energies were derived from Monte Carlo simulations. Deuterium adsorption on Pd monolayer films shows a pronounced weakening of adsorption bond, which is attributed to compressive strain and metal–metal interactions between Pd and underlying Ru atoms (‘vertical ligand effect’). Mixed adsorption ensembles containing both Pd and Ru atoms give rise to D₂ desorption in the intermediate temperature regime. The impact of the specific lateral distribution of the two metal species on the chemical surface properties is illustrated by comparison with deuterium adsorption on dispersed PtRu/Ru(0 0 0 1) surface alloys [T. Diemant, H. Rauscher, R.J. Behm, J. Phys. Chem. C 112 (2008) 8381].     

Carbon-doped high-mobility hole gases on (0 0 1) and (1 1 0) GaAs

Since Stormer and Tsang have introduced the first two-dimensional hole gas (2DHG) in the GaAs/AlGaAs heterosystem, the choice of suitable dopants was limited to beryllium and silicon over the last 20 years. Both acceptor atoms have significant disadvantages, i.e. either high-diffusion rates or a limitation to specific growth directions. Utilizing a carbon filament-doping source, we prepared high-quality 2DHGs in the (0 0 1) and the nonpolar (1 1 0) crystal plane with carrier mobilies beyond 10⁶ cm²/Vs in quantum well and single interface structures. Low-temperature magnetoresistance measurements recover a large number of fractional QHE states and show a pronounced beating pattern from which the Rashba induced spin-splitting has been determined. In addition, 2DHGs have been grown on cleaved edges of (1 1 0) and (0 0 1) wafers with transport features in qualitative agreement to our findings on (1 1 0) substrates.     

Influence of growth temperature and deposition duration on the structure,surface morphology and optical properties of InN/YSZ (1 0 0)

InN films with the wurtzite structure have been grown directly on YSZ (1 0 0) substrate by the RF-magnetron sputtering technique. Strongly (0 0 2) oriented films with smooth surfaces (0.7–2.9 nm surface roughness depending on substrate temperature), were grown within 30 min. Films deposited for 60 min developed three-dimensional (3D) pyramidal islands on top of their surfaces, which diminished the residual elastic strain. The optical absorption edge and PL peak energy around 1.7 eV were found to redshift with increasing film thickness and substrate temperature.     

STM study of the initial stages of C60 adsorption on the Pt(1 1 0)-(1 × 2) surface

We have studied the initial stages of adsorption of C₆₀ on the Pt (1 1 0)-(1 × 2) surface by means of STM. At room temperature, fullerene molecules adsorb in the troughs between two adjacent Pt rows of the missing row reconstruction. Mobility over the terraces is negligible, denoting strong bonding with the surface, also testified by a well-defined orientation of fullerene monomers with respect to the substrate. Upon annealing at 750 K, molecular migration towards kinks and step edges occurs, where small islands nucleation begins. A commensurate registry with the substrate is maintained by small (5-10 molecules) C₆₀ aggregates, leading to expanded nearest-neighbour distances with respect to those found in hexagonal close packed fullerene ad-islands grown on other metallic substrates.     

GaAs(0 0 1) (2 × 4) to c(4 × 4) transformation observed in situ by STM during As flux irradiation

Atomic resolution scanning tunnelling microscopy (STM) has been used to study in situ the As-terminated reconstructions formed on GaAs(0 0 1) surfaces in the presence of an As₄ flux. The relationship between the As-rich (2 × 4) and c(4 × 4) surfaces is observed throughout the gradual evolution of the reconstruction transformation. The results suggest that during the initial stage of the transformation, Ga-rich As-terminated variations of the c(4 × 4) form in order to accommodate excess mobile Ga produced by pit formation. These transient structures later planarize, as excess Ga is incorporated at step/island edges. Successive imaging of the same sample area during As₄ irradiation allows point-by-point adatom binding to be analysed in a way inaccessible to MBE–STM systems relying on sample quenching and transfer.     

H2S dissociation on the Fe(1 0 0) surface: An ab initio molecular dynamics study

The adsorption of H₂S on Fe(1 0 0) is examined using ab initio molecular dynamics at 298 and 1808 K. Dissociation of H₂S occurs at both temperatures simulated, to leave adsorbed S and two H atoms. The dissociation occurs via a two step process and the mechanism is found to be different depending on the temperature of the reaction. At 1808 K, diffusion of the dissociated H atoms into the subsurface region is also observed.     

Si nucleation on Si(1 1 1)-7 × 7: From cluster pairs to 2D islands

Nucleation of 2D islands in Si/Si(1 1 1)-7 × 7 molecular beam epitaxy is studied using scanning tunneling microscopy (STM). A detailed analysis of the population of small amorphous clusters coexisting on the surface with epitaxial 2D islands has been performed. It is shown that small clusters tend to form pairs. The pairs serve as precursors for 2D islands as confirmed by direct STM observations of the smallest 2D islands covering two adjacent half-unit cells of the 7 × 7 reconstruction. It is proved with scaling arguments that the critical nucleus for 2D island formation consists not only of the pair itself, but also includes additional adatoms not belonging to the stable clusters.     

Step formation on hydrogen-etched 6H-SiC{0 0 0 1} surfaces

The formation of step bunches and/or facets on hydrogen-etched 6H-SiC(0 0 0 1) and () surfaces has been studied, using both nominally on-axis and intentionally miscut (i.e. vicinal) substrates. It is found that small miscuts on the (0 0 0 1) surface produce full unit-cell high steps, while half unit-cell high steps are observed on the () surface. The observed step normal direction is found to be for both surfaces. Hence, for intentionally miscut material, a miscut oriented towards this direction produces much better order in the step array compared to a miscut oriented towards a direction. For (0 0 0 1) vicinal surfaces that are miscut towards the direction, the formation of surface ripples is observed for 3° miscut and the development of small facets (nanofacets) is found for higher miscut angles. Much less faceting is observed on miscut () surfaces. Additionally, the (0 0 01) surface is found to have a much larger spatial anisotropy in step energies than the () surface.     

Effects of electronic confinement and substrate on the low-temperature growth of Pb islands on Si(1 0 0)-2 × 1 surfaces

The growth of Pb films on the Si(1 0 0)-2 × 1 surface has been investigated at low temperature using scanning tunneling microscopy. Although the orientation of the substrate is (1 0 0), flat-top Pb islands with (1 1 1) surface can be observed. The island thickness is confined within four to nine atomic layers at low coverage. Among these islands, those with a thickness of six layers are most abundant. Quantum-well states in Pb(1 1 1) islands of different thickness are acquired by scanning tunneling spectroscopy. They are found to be identical to those taken on the Pb(1 1 1) islands grown on the Si(1 1 1)7 × 7 surface. Besides Pb(1 1 1) islands, two additional types of Pb islands are formed: rectangular flat-top Pb(1 0 0) islands and rectangular three-dimensional (3D) Pb islands, and both their orientations rotate by 90° from a terrace to the adjacent one. This phenomenon implies that the structures of Pb(1 0 0) and 3D islands are influenced by the Si(1 0 0)-2 × 1 substrate.     

Room temperature observation of nitric oxide on Ir(1 1 1) by scanning tunneling microscopy

Room temperature (RT) adsorption of nitric oxide (NO) on Ir(1 1 1) was studied by scanning tunneling microscopy (STM). At low exposures, NO molecules can not be imaged by STM, because at RT the diffusion of NO is much faster than the STM scanning speed. At high exposures near the saturation coverage, however, a well-ordered 2 × 2 structure is observed. The coverage of the major 2 × 2 species is 0.25 and they can be assigned to the NO molecules adsorbed on the Ir ontop sites. A small number of less bright spots are assigned to nitrogen atoms produced by dissociation. Their number increases by annealing the NO-saturated surface at 380 K. A small number of another dissociation product, oxygen, are observed as black lines, indicating that the diffusion of oxygen atoms is fast. Scratch-like noise features were also detected by the STM, which suggests that a mobile precursor state exists, which was clearly shown by the effects of electron irradiation from the STM tip. These results are consistent with the previous molecular beam studies. Hopping of the 2 × 2 ordered NO species was frequently observed at the anti-phase domain boundaries and edges of the 2 × 2 islands.     

Heterogeneous oxidation of Si(1 1 1) 7 × 7 monitored with Kelvin probe force microscopy

Laterally resolved topography and Contact Potential Difference (CPD) images, acquired during the exposure of clean Si(1 1 1) 7 × 7 to molecular oxygen at room temperature, show a heterogeneous oxidation process, without preference for step edges. The increase of and lateral changes in work function variations show that the CPD variations of the final oxide film are related to the silicon/oxide interface. The molecular Höfer precursor has a pronounced influence on the development of the interface bonding.     

Effect of substrate temperature on few-layer graphene grown on Al2O3 (0 0 0 1) via direct carbon atoms deposition

Few-layer graphene (FLG) was grown on Al₂O₃ (0 0 0 1) substrates at different temperatures via direct carbon atoms deposition by using solid source molecular beam epitaxy (SSMBE) method. The structural properties were characterized by reflection high energy electron diffraction (RHEED), Raman spectroscopy and near-edge X-ray absorption fine-structure (NEXAFS). The results showed that the FLG started to form at the substrate temperature of 700 °C. When the substrate temperature increased to 1300 °C, the quality of the FLG was the best and the layer number was estimated to be less than 5. At higher substrate temperature (1400 °C or above), the crystalline quality of the FLG would be deteriorated. Our experiment results demonstrated that the substrate temperature played an important role on the FLG layer formation on Al₂O₃ (0 0 0 1) substrates and the related growth mechanism was briefly discussed.     

Optical investigation of ferromagnetic Ga1−xMnxN layers grown on sapphire (0 0 0 1) substrates

We have investigated the temperature-dependent photoluminescence (PL) spectra in Ga_1−xMn_xN layers (where x≈0.1–0.8%) grown on sapphire (0 0 0 1) substrates using the plasma-enhanced molecular beam epitaxy technique. All the layers doped with manganese exhibited n-type conductivity with Curie temperature over 350 K. The efficient PL are peaked in the red (1.86 eV), yellow (2.34 eV), and blue (3.29 eV) spectral range. It was found that the blue band at 3.29 eV is mostly associated with the formation complexes between donors (e.g., N vacancy) and Mn acceptors, which results in forming donor levels at 0.23 eV below the conduction band edge. The yellow band is attributed to intrinsic gallium defects. The broad band at 1.86 eV is attributed to inner ⁵D state transition (T₂ to E) of Mn ions.