Electrical conductivity and dielectric relaxation behavior of AgFeP2O7 compound

In the present study, AgFeP₂O₇ was prepared by a solid-state reaction method. Rietveld refinement of the X-ray diffraction pattern suggests the formation of the single phase desired compound with monoclinic structure at room temperature. Not only were the impedance spectroscopy measurements of our compound carried out from 209 Hz to 5 MHz over the temperature range of 553 K–698 K but its AC conductivity as well as the dielectric relaxation were evaluated. Impedance measurements show AgFeP₂O₇ an ionic conductor being the conductivity 1.04?×?10^–?5(Ω^–?1cm^–?1) at 573 K. The conductivity and modulus formalisms provide nearly the same activation energies for electrical relaxation of mobile ions revealing that transport properties in this material appear to be due to an ionic hopping mechanism dominated by the motion of the Ag⁺ ions along tunnels presented in the structure of the investigated material.     

Study of yield stress anomaly of Fe2MnAl single crystal by in situ TEM straining

L2₁-structured Fe₅₉Mn₁₇Al₂₄ shows a yield stress anomaly with a peak yield stress at 700?K. The aim of the work reported here was to determine the dislocation mechanisms involved in this anomalous behaviour by performing in situ straining on Fe₅₉Mn₁₇Al₂₄ single crystals in a transmission electron microscope at 300–900?K. Cross-slip of ?111? dislocations was frequently found to occur between {110} and {211} planes at all temperatures tested. At 300?K, dislocations were four-fold dissociated and the partials moved together under stress. At 700–800?K, partial dislocations with a Burgers vector of a/2?111? dominated the deformation. These partial dislocations moved independently in the ordered matrix in a jerky manner, with rapid motion between long periods of locking. X-ray diffraction measurements showed that the degree of L2₁-order slightly decreased with increasing temperature in the range 300–700?K, and dropped rapidly above 700?K. At 900?K, the material was B2-ordered. The increased yield stress at elevated temperatures is primarily attributed to the uncoupling of a/2?111? partial dislocations trailing shear-induced anti-phase boundaries.     

Optical properties of TlGaxIn1-xSe2-layered mixed crystals (0.5 ≤ x ≤ 1) by spectroscopic ellipsometry,transmission, and reflection measurements

The layered semiconducting TlGa_xIn_1-xSe₂-mixed crystals (0.5?≤?x?≤?1) were studied for the first time by spectroscopic ellipsometry measurements in the 1.2–6.2?eV spectral range at room temperature. The spectral dependence of the components of the complex dielectric function, refractive index, and extinction coefficient were revealed using an optical model. The interband transition energies in the studied samples were found from the analysis of the second-energy derivative spectra of the complex dielectric function. The effect of the isomorphic cation substitution (indium for gallium) on critical point energies in TlGa_xIn_1-xSe₂ crystals was established. Moreover, the absorption edge of TlGa_xIn_1-xSe₂ crystals have been studied through the transmission and reflection measurements in the wavelength range of 500–1100?nm. The analysis of absorption data revealed the presence of both optical indirect and direct transitions. It was found that the energy band gaps decrease with the increase of indium content in the studied crystals.     

Coordination preference and magnetic properties of FeII assemblies with a bis-azole bearing 1,2,4-triazole and tetrazole

With a new bis-azole molecular fragment (Htt) bearing 1,2,4-triazole and tetrazole, a mononuclear complex [Fe(tt)₂(H₂O)₄]·2H₂O (1), a trinuclear complex [Fe₃(tt)₆(H₂O)₆]·2H₂O (2) and a 1D coordination polymer [Fe(tt)(Htt)₂]BF₄·2CH₃OH (3) were obtained by varying reaction conditions. Htt acts either as an anionic or neutral ligand depending upon the reaction medium and pH. Thermal variation of spin states of 1–3 were investigated in the range 77–300?K by ⁵⁷Fe M?ssbauer spectroscopy. 1 totally remains in high-spin state over the entire temperature range whereas no spin crossover was evidenced in 2. Nearly 1:1 high-spin and low-spin population ratio is found in 3, which remains constant over the entire temperature range investigated.     

Synthesis and characterization of Ca and Sr co-doped ceria electrolytes

A series of Ce_0.85Ca_0.15?x Sr _x O_2–δ (x?=?0, 0.03 and 0.06) were synthesized via citrate–nitrate combustion method. Samples were first characterized by the X-ray diffraction (XRD) and scanning electron microscopy (SEM). The XRD and SEM results showed that a complete solid solution formed in fluorite structure and Ce_0.85Ca_0.15?x Sr _x O_2?δ had homogeneous distribution of particle with grain size in the range of 2.5 to 3 μm. The electrical conductivities of Ce_0.85Ca_0.15?x Sr _x O_2?δ were evaluated for its use as a solid electrolyte in the intermediate-temperature solid oxide fuel cells by complex plane impedance measurements. Impedance measurements were made in the frequency range 1 MHz–0.1 Hz and temperature range 300–700 °C. It was found that Ce_0.85Ca_0.12Sr_0.03O_2?δ showed highest conductivity.     

Transport properties of lead phosphate glass doped by cobalt,vanadium and chromium oxides

The electrical transport properties were investigated of a glass system of basic composition 50?mol. % Pb₃O₄–50?mol. % P₂O₅ containing CoO, Cr₂O₃ or V₂O₅ dopanys. The ac conductivity and the thermoelectric power were measured as a function of temperature. Properties such as dielectric constant, loss factor tangent and electrical conductivity are reported in the frequency range 200?Hz–100?kHz and temperature range 300–450?K. The variation in electrical conductivity with temperature was found to depend on the types of transition metal ions involved. The temperature dependence of the frequency exponent, s, was analyzed using different theoretical models. The variation of the thermoelectric power with temperature indicated the presence of more than one conduction mechanism for the investigated samples. This result was confirmed with the results of the dielectric properties at different frequencies. The introduction of cobalt ions in glass formers improves the electrical properties of non-crystalline ionic conductors.     

Synthesis,refinement of the structure,and AC conductivity behavior of sodium lithium orthonavadates

The Na _x Li_1-x CdVO₄ (x = 0.5, 1) orthovanadates were prepared using a solid-state reaction method. The x-ray diffraction patterns (XRDP) of both materials reveal the formation of the Na₂CrO₄ structure. Vibrational study confirms the existence of [VO₄]^3? group. Electrical measurements of our compounds have been investigated using complex impedance spectroscopy (CIS) in the frequency and temperature range 209 Hz–1 MHz and 589–703 K, respectively. Nyquist plots reveal the presence of tow contributions, an equivalent circuit was proposed. DC conductivity shows electrical conduction in the material as a thermally activated process. The AC conductivity is explained using the non-overlapping small polaron tunneling (NSPT) conduction mechanism. A relationship between crystal structure and ionic conductivity was established and discussed.     

Manifestation of phase transformations in optical spectra of Na0.5Bi0.5TiO3 crystals between 25°C and 350°C

The pseudo dielectric function ?ε? (E) = ?ε ₁? (E) + i?ε ₂? (E) of sodium bismuth titanate Na_0.5Bi_0.5TiO₃, has been obtained in the spectral range of electronic excitations (2–9.5 eV) by spectroscopic ellipsometry using the synchrotron radiation source BESSY II. The spectrum contains a broad absorption band at 4.2–4.5 eV. The temperature dependence in the range of 25–350°C is presented by the related susceptibilities ?χ ₁? (T) and ?χ ₂? (T) at 5 eV. A clear peculiarity in the temperature behavior of ?χ ₁? (T) and ?χ ₂? (T) between 180 and 320°C has been revealed and discussed. In this range an extremum-like temperature dependence of intensity of the light reflected from the sample surface, has been revealed and can be explained by the diffraction of light on the grid of the elastic domain structure of the sample.     

Some characterizations of a new metal–organic framework (n-C14H29NH3)2CdCl4 and the role of hydrogen bonding

A cadmium-based organic–inorganic hybrid (n-C₁₄H₂₉NH₃)₂CdCl₄ is synthesized and characterized, thermally and dielectrically. The differential scanning calorimetery (DSC) and the differential thermal analysis (DTA) thermograms were performed in a suitable range of temperature. The general feature of each thermogram indicates that the hybrid undergoes two structural phase transitions at T_major ≈ 351.5?K and T_minor ≈ 344.66?K in addition to an intermediate temperature which is located at ≈346.8?K. For further confirmation of the observed phase transitions, the complex dielectric permittivity ε* (ω,T)?=?ε′(ω,T) – iε″(ω,T) and ac conductivity σ_ac(ω,T) were accurately measured in the wide range of temperature 100?K<T<400?K at some suitable range of frequencies. The data evidenced the existence of such transitions. Comparison with other hybrids reveals the absence of the odd–even effect whereas the transition temperature increases with the increase of the chain length. The mechanism of proton transfer and kink defects was outlined.     

Compressive strength and hot deformation mechanisms in as-cast Mg-4Al-2Ba-2Ca (ABaX422) alloy

The behaviour of an as-cast ABaX422 Mg alloy has been evaluated with regard to its compressive strength in the temperature range 25–250?°C and hot working characteristics in the range 260–500?°C. The microstructure of the as-cast alloy has intermetallic phases Mg₁₇Ba₂ and (Al, Mg)₂Ca at the grain boundaries and is fine grained. The alloy has compressive strength better than AZ31 with Ca and Zn, which was attributed to the finer grain size. A processing map developed to characterize its hot working behaviour revealed two dynamic recrystallization domains in the temperature and strain rate ranges of (1) 300–390?°C/0.0003–0.001?s^?1 and (2) 400–500?°C/0.0003–0.5?s^?1. In the first domain, basal?+?prismatic slip occurs along with recovery by climb while in the second domain, second-order pyramidal slip dominates and recovery occurs by cross-slip. The apparent activation energy estimated in Domains 1 and 2 are 169 and 263?kJ/mol respectively, both being higher than that for self-diffusion suggesting that the intermetallic particles in the matrix cause considerable back stress. Bulk metal working of this alloy may be done in Domain 2 which ensures high workability while finish working may be done in Domain 1 in order to achieve a fine grained component. The alloy exhibits flow instability regimes at higher strain rates, in both the lower and higher temperature regions of the processing map, the manifestation being adiabatic shear band formation and flow localization respectively.     

Transport properties in non-oxide perovskite ferroelectric relaxors

Electric transport in a Cu-doped Cd salt [(CH₂)₃(NH₃)₂Cd_{1? x} Cu _x Cl₄, x?=?0.0, 0.07, 0.395 and 0.69] was investigated in the frequency range 60?Hz–100?kHz and the temperature range 290–450?K. The conductivity increases with increasing copper doping. Samples with x?=?0.0 and 0.07 undergo phase transitions at 374?K and 369?K, respectively. Ferroelectric relaxor-like behaviour appears for x?=?0.395 and 0.69. The conduction mechanism of the samples with x?=?0.0 and 0.07 depends on the temperature region. Below the transition temperatures chlorine vacancy and proton hopping prevails, whereas above the transition temperatures mainly proton conduction dominates. Transport in the new non-oxide ferroelectric relaxors, where x?=?0.395 and 0.69, can be explained by the jump relaxation model where proton and ionic hopping contribute to the conductivity throughout the whole temperature range.     

AC conductivity and mechanism of conduction study of lithium barium pyrophosphate Li<Subscript>2</Subscript>BaP<Subscript>2</Subscript>O<Subscript>7</Subscript> using impedance spectroscopy

The Li₂BaP₂O₇ compound has been obtained by the conventional solid-state reaction and characterized by X-ray powder diffraction. The title material crystallizes in the monoclinic system with C2/c space group. Electrical properties of the compound have been studied using complex impedance spectroscopy in the frequency range 200 Hz–5 MHz and temperature range 589–724 K. Temperature dependence of the DC conductivity and modulus was found to obey the Arrhenius law. The obtained values of activation energy are different which confirms that transport in the titled compound is not due to a simple hopping mechanism. AC conductivity measured follows the power-law dependence σ _AC?～?ω ^s typical for charge transport. Therefore, the experimental results are analyzed with various theoretical models. Temperature dependence of the power law exponent s strongly suggests that tunneling of large polarons is the dominant transport process.     

Properties of (Bi1/9Na2/3)(Mn1/3Nb2/3)O3 analysed within dielectric permittivity,conductivity, electric modulus and derivative techniques approach

The (Bi_1/9Na_2/3)(Mn_1/3Nb_2/3)O₃ ceramics with perovskite structure were sintered. The XRD test proved that the samples are cubic (a?=?3.920?±?0.001?Å). Microstructure and atomic composition were determined with a SEM (JSM-5410) equipped with energy dispersion X-ray analyser (ISIS-300). The fluctuation in the chemical composition was found indicating on local disorder. Broadband dielectric spectroscopy in the range 10^?1–3?·?10⁷?Hz was applied within the range of 100–650?K. The real, ?′(f,?T), and imaginary, ?″(f,?T), parts of complex dielectric permitivity characteristics, both in the temperature and frequency domain, show relaxation processes partially covered by electric conductivity. At high temperatures the electric conductivity exhibits a thermally activated behaviour σ(f,?T)?∝?exp(?E _a/kT) but the variable range hopping (VRH) dependence σ?∝?exp[?(T ₀/T)^1/4] is manifested at low temperatures. The derivatives technique in the frequency (??log??/??log?ω) and temperature (??log??/?T) domain enabled various relaxation processes to be distinguished. The data converted to electric modulus representation, M*(f,?T)?=?1/?*, exhibited clearly resolved relaxation peaks. The relaxation times obtained from the peaks position show a slightly non-Arrhenius temperature behaviour with the activation energy varying in 0.4–0.6?eV range and characteristic time of the electric conductivity relaxation of the order of 10^?12?s. The relaxation times can be fitted at better accuracy with the VRH dependence where T ₀ are of the order of 10⁸?K. It is shown that the low frequency ac-conductivity converges to dc-conductivity and the relation σ(0)?～?ω_m?～?τ_m ^?1 typical for the disordered solids applies. The conduction current relaxation relationship behaves in accord with the VRH system: σ_dc?∝?(T/T ₀)^q (e ²/kT) ω_c, where ω_c?=?ν_ph exp[?(T ₀/T)^1/4] is valid for the locally disordered (Bi_1/9Na_2/3)(Mn_1/3Nb_2/3)O₃ compound.     

Structural and electrochemical investigation of Zn-doped LiCoO2 powders

A commercial cathode material (LiCoO₂) was modified by doping with Zn to improve its performance in lithium battery. The structure and morphology of the doped cathode material were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM). The synthesized samples were characterized using X-ray photoelectron spectra (XPS), used to investigate the elementary states on the system. The electrical conductivity variations of doped powders were measured in the temperature range between 30 and 150?°C. The 3?mol% Zn-doped LiCoO₂ sample shows the highest reversibility capacity (178?mA?h g^?1) after 30 cycles in the voltage window 3.0?C4.5?V.     

Structure and dielectric behavior of TlSbS2

A comparison of structure and dielectric properties of TlSbS₂ thin films, deposited in different thicknesses (400–4100 Å) by thermal evaporation of TlSbS₂ crystals that were grown by the Stockbarger–Bridgman technique and the bulk material properties of TlSbS₂ are presented. Dielectric constant ε ₁ and dielectric loss ε ₂ have been calculated by measuring capacitance and dielectric loss factor in the frequency range 20 Hz–10 KHz and in the temperature range 273–433 K. It is observed that at 1 kHz frequency and 293 K temperature the dielectric constant of TlSbS₂ thin films is ε ₁=1.8–6 and the dielectric loss of TlSbS₂ thin films is ε ₂=0.5–3 depending on film thickness. In the given intervals, both of dielectric constant and dielectric loss decrease with frequency, but increase with temperature. The maximum barrier height W _m is calculated from the dielectric measurements. The values of W _m for TlSbS₂ films and bulk are obtained as 0.56 eV and 0.62 eV at room temperature, respectively. The obtained values agree with those proposed by the theory of hopping over the potential barrier. The temperature variation of ac conductivity can be reasonably interpreted in terms of the correlated barrier hopping model since it obeys the ω ^s law with a temperature dependent s (s<1) and going down as the temperature is increased. The temperature coefficient of capacitance (TCC) and permittivity (TCP) are evaluated for both thin films and bulk material of TlSbS₂.     

Microstructure,creep, and tensile behaviour of a Ti–15Al–33Nb (at.%) beta+orthorhombic alloy

The microstructural evolution, creep and tensile deformation behaviour of a Ti–15Al–33Nb (at.%) alloy was studied. Monolithic sheet material was produced through conventional thermomechanical processing techniques comprising non-isothermal forging and pack rolling. Electron microscopy studies showed that depending on the heat-treatment schedule, this alloy may contain three constituent phases including:?β?(disordered body-centred cubic), α₂ (ordered hexagonal close-packed based on Ti₃Al) and O (ordered orthorhombic based on Ti₂AlNb). Heat treatments at all temperatures above 990°C, followed by water quenching, resulted in fully-β microstructures. Below 990°C, Widmanstätten O-phase or α₂-phase precipitated within the?β?grains. The fine-grained as-processed microstructure, which exhibited 90?vol.% β-phase, exhibited excellent strength (UTS?=?916?MPa) and ductility (?_f>12%). After heat treatment, greater volume fractions of the orthorhombic phase precipitated and resulted in lower ? _f values with UTS values ranging between 836–920?MPa. However, RT elongations of more than 2% were recorded for microstructures containing up to 63?vol.% O-phase. Specimens subjected to 650°C tensile experiments tended to exhibit lower strength values while maintaining higher elongation-to-failure. Tensile creep tests were conducted in the temperature range 650–710°C and stress range 49–275?MPa. The measured creep exponents and activation energies suggested that grain boundary sliding operates at intermediate stress levels and dislocation climb is active at high stresses. Microstructural effects on the tensile properties and creep behaviour are discussed in comparison to a Ti–12Al–38Nb O?+?β alloy.     

Impedance spectroscopy of Gd-doped BiFeO3 multiferroics

The polycrystalline Bi_1?x Gd _x FeO₃ (BGFO) (x=0.0, 0.05, 0.10, 0.15, 0.20) materials were synthesized by a solid-state reaction (mixed oxide) technique. Preliminary X-ray structural analysis of the compounds confirmed the formation of single-phase polycrystalline samples. Room temperature scanning electron micrographs of the materials revealed the size, type and distribution of grains on the surface of samples. Studies of impedance, electrical modulus and electric conductivity of the materials in a wide frequency (10–1000 kHz) and temperature (30–500 ^°C) range using a complex impedance spectroscopy technique have provided considerable vital information on contribution of grains, grain boundary and interface in these parameters. A strong correlation between these electrical parameters and microstructures (bulk, grain boundary, nature of charge carrier, etc.) of the materials was established. The frequency dependence of electric modulus and impedance of the material shows the presence of non-Debye type of relaxation.     

Growth and Spectroscopic Properties of Er:Yab Single Crystals

The Er-doped YAB (YAl₃(BO₃)₄) is a potential self-frequency-doubling laser material. Single crystals were grown by the top-seeded flux method. The absorption spectra of the infrared Er^3? transitions were monitored in YAB crystals in the 9–300 K temperature range by high-resolution Fourier transform spectroscopy. In the whole spectral range the energy levels and Stark components of 12 transitions were detectable. In this paper the two infrared transitions (from the ⁴I_15/2 ground state to the ⁴I_13/2 and ⁴I_11/2 levels) were analyzed in detail. The low temperature absorption spectra of Er:YAB consist of sharp lines, the number of which corresponds to the theoretical predictions. This suggests that Er^3? ions occupy one specific lattice site (yttrium positions) with negligible aggregation at the higher dopant concentrations investigated (i.e. 0.12 Fr atom/YAB mole).     

Availability of water glass/Bi2O3 composites in dielectric and gamma-ray screening applications

ABSTRACT

Sodium silicate (Na₂Si₃O₇) also known as water glass is a very low cost material which is used in many industrial applications such as a builder in detergents, as a binder and adhesive etc. But so far the electrical properties of sodium silicate and its ability to screen radiation have never been investigated. In the present study, the frequency dependent electrical properties and gamma-ray shielding performance of water glass based bismuth oxide composites have been studied for the first time. In accordance with this purpose, Na₂Si₃O₇/Bi₂O₃ glassy composites have been prepared for searching their possible applications in electronics and radiation screening. The surface morphology of the samples have been determined by Scanning Electron Microscope (SEM). The frequency dependent electrical properties such as complex impedance, complex dielectric function and conductivity have been analyzed at room temperature between 1 and 40?MHz. As a result of alternative current (ac) electrical analysis, it has been determined that the Na₂Si₃O₇/Bi₂O₃ composites can be utilized as a dielectric layer in capacitors. On the other hand, since bismuth oxide is an anti-radiative material, the gamma-ray screening parameters such as mass attenuation coefficient, half layer and tenth layer values along with mean free path of the composites have been defined experimentally by using NaI(Tl) scintillation detector for the Ba-133 radiation source at 81 and 356?keV. The values of these parameters have also been checked by Monte–Carlo simulation. Since a good agreement has been assigned between experimental and Monte–Carlo simulation results, the related gamma ray shielding parameters have been determined by Monte–Carlo simulation for other gamma photon energies (140?keV, 208?keV, 468?keV, and 661?keV) which are generated from Tc-99, Lu-177, Ir-132, and Cs-137 sources. Ultimately, Na₂Si₃O₇/Bi₂O₃(35%) composite has been suggested as an eco-friendly, lead-free glassy structured material for the gamma radiation shielding in medical applications.