Vibrational and Polariton Spectra of CdGa2S4 and CdAl2S4 Crystals

In this work the vibrational and polariton optical spectra of the CdGa₂S₄ and CdAl₂S₄ crystals grown from vapor phase and by the Bridgman method have been investigated. The light scattering by polaritons excited of various wavelength of Ar⁺ and He‐Ne lasers is studied.     

Optical Properties of MnIn2S2Se2 Single Crystals

Optical transmittance and reflectance spectra of MnIn₂S₂Se₂ single crystals are measured in the wavelength range from 0.5 to 30 μm. The interference method is used to determine the refractive index of the compound for wavelengths between 0.8 and 12 μm. From an analysis of the absorption spectrum it follows that the fundamental edge is due to forbidden indirect transitions between parabolic bands for the polarization E ⊥ c with a gap energy of 1.50 eV at room temperature.     

Growth and Optical Characterization of CdI2 Single Crystals

Single crystals of CdI₂ were grown by employing the horizontal zone refining method. Emission spectra of these crystals were recorded at room temperature and liquid nitrogen temperature. Various emission parameters such as optical gain coefficient, lifetime, gain, stimulated emission cross section were evaluated for the various emission components. The results show high gain at low temperature whereas very low value at rmm temperature. This has been explained by invoking the existence of self trapped excitons in the crystal.     

CdSe单晶体的生长及其特性研究

本文报道了用改进的垂直气相法(多级提纯垂直气相法)生长富Cd的CdSe单晶体,并对晶体的性能进行了观测,其电阻率为107Ωcm量级,电子陷阱浓度为108cm-3量级,第一次报道了(110)面的腐蚀形貌。结果表明：采用这种方法制备CdSe单晶,设备简单,易于操作,在提纯和生长过程中不需要转移原料,有利于减少晶体中的杂质含量,降低位错密度,改善晶体的电学性能。多级提纯垂直气相法是一种有前途的CdSe单晶体生长的新方法。     

Zn-Mg-Se-I2系统生长ZnMgSe单晶及其特征

以高纯的Zn、Mg以及Se2单质为生长原料,加入高纯的碘单质作为反应输运剂,采用化学气相输运(CVT)方法成功制备了ZnMgSe单晶,并且分别采用X射线衍射、双晶衍射、紫外可见分光光度计、红外光谱仪以及光致发光(PL)技术研究了晶体的结构、结晶质量以及光学性质.结果表明,制备的单晶结晶性能良好,在500 ～ 1500 nm波长范围内的透过率接近50;,在400 ～ 4000 cm-1波长范围内的透过率达到42;,在2.0～2.6 eV范围内有三个明显的空位与杂质发光带.以Zn、Mg及Se2单质为生长原料,在输运剂I2的帮助下可以实现ZnMgSe单晶的生长.     

Growth and Characterization of Single Crystals of the Ternary Compound TlGaTe2

The electrical conductivity and the Hall effect for TlGaTe₂ crystals have been measured over a wide temperature range. The crystal used for our study was grown by the Bridgman technique and possessed p-type conductivity. The energy gap has been found to be 0.84 eV, whereas the ionization energy has the value 0.25 eV. The variation of the Hall mobility as well as the carrier concentration with temperature was investigated. The scattering mechanism of the carrier in the whole temperature range of investigation was checked.     

Growth and Characterization of Na2CaGe6O14 Single Crystals

Transparent, crack-free Na₂CaGe₆O₁₄ (NCG) single crystals were successfully grown using the Czcchralski technique. The largest crystal had 30 mm in total length and 18 mm in maximal diameter. Best crystal quality was achieved under low temperature gradient arrangement. The crystal structure of NCG has been refined from single crystal X-ray diffraction data. Some piezoelectric properties of NCG are reported.     

Some Physical Properties of Ga2Se Single Crystals

Measurements of the electrical conductivity, Hall effect, thermnoelectric power were carried out in a wide temperature range (from about 170 to 475 K) for Ga₂Se compound grown in single crystalline form. The present investigation revealed unusual observations in the Hall effect and the scattering mechanisms of the charge carriers indicating that Ga₂Se is not a simple semiconductor. Also it showed that Ga₂Se has a relatively high value of the thermoelectric power. A lot of physical parameters were deduced in the present study.     

氯化锌钾单晶的直拉法生长

利用差热分析和X射线粉末衍射研究了KCl-ZnCl2部分二元相图,采用丘克拉斯基技术生长出光学质量的氯化锌钾单晶,其结构为β-K2SO4型(Pna21).晶胞参数为a=1.24051nm,b=2.67806nm,c=0.72554nm.     

Far Infrared and Raman Optical Study of CdInGaS4, CdIn2S4, HgInGaS4 and CdIn2S2Se2 Crystals

Raman and infrared reflectivity spectra of CdInGaS₄, CdIn₂G₄, HgInGaS₄, and CdIn₂S₂Se₂ crystals have been investigated. The fiindamental phonon parameters, the limiting dielectric constants ϵ₀ and ϵ∞ and the reflectivity spectrum contours have been calculated using classical dispersion relations.     

磷酸铁锂单晶水热法生长及其表征

运用桂林水热法成功制备出了毫米级磷酸铁锂体晶体,晶体呈六棱柱结构或者呈圆形(around),等长的外观,等大的外表.实验得到LiFePO4单晶的XRD衍射峰谱,10°~40°范围内的主强峰相较于磷酸锂铁微晶多出(020)面,说明在晶体生长后期主要由(020)面控制,主要成六棱柱属性终止于(010),(200),(101)这三个表面,这些优势面有望在材料的电化学和表面交换性能中发挥重要作用.分析LiFePO4晶体结构确定锂离子在(010)方向是运动能量最低的通道,所以增大ac方向维度二维片状和缩短b轴方向的尺度结构的LiFePO4是可以设计合成的.这将使锂离子的扩散速度得到提高,并且使磷酸铁锂材料在倍率性能,电导率,低温性能方面都可得到提升.LiFePO4晶体在紫外光区大量吸收,在可见光区内出现一个宽的透过带,吸收值较小,大部分光透过,这正是LiFePO4单晶颜色不深的原因,并且具有良好的透过性.合成的LiFePO4晶体的点缺陷造成的色心对近红外短波部分980~1700 nm波长的光全部吸收,近红外长波1750~3000 nm光全部透过,LiFePO4晶体在1000~3000 nm波长范围内的高对称性吸收和透过必将使其在近红外波段窗口器件的应用上有所突破.     

Effect of Crucible Diameter and Sealing Pressure on Growth Features of As2Se3 Single Crystals

Crystals of arsenic triselenide were grown in tubes of diameter varying from 14 to 25 mm sealed under partial pressure of Ar in the range 60–660 Torr. The temperature range of the growth zone was independent of crucible diameter and ambient pressure under otherwise identical conditions. A particular range of ambient pressure was conducive for the growth of good quality crystals and whiskers, growth rate increasing with diameter of tube. Transition to growth stage from nucleation stage was not spontaneous in tubes of diameter ≦ 16 mm but required a temperature cycling. Results are explained qualitatively.     

Microtopographical Characterization of Vapour-grown SnS2 Single Crystals

Thin flakes of tin disulphide single crystals grown using direct vapour transport have been subjected to characterization to unfold their growth mechanism. Two types of spirals. viz. those having opposite orientation present on the same face and those present on the opposite finished faces are significantly discussed.     

高纯半绝缘4H-SiC单晶的生长

使用物理气相传输方法(PVT)制备了直径为3英寸、非故意深能级杂质(如:钒)掺杂的半绝缘4H-SiC晶体.使用二次离子质谱(SIMS)、拉曼光谱面扫描、非接触电阻率测试面扫描和高分辨XRD摇摆曲线对衬底的浅能级和两性深能级杂质的浓度、衬底晶型、衬底电阻率和衬底结晶质量进行了表征.结果表明,衬底全部面积电阻率大于4×109 Ω·cm,钒浓度低于探测限,这表明浅能级杂质浓度已经低至可以被本征缺陷引入深能级完全补偿范围;拉曼光谱结果表明衬底4H-SiC晶型面积比例为100;;(004)衍射面高分辨X射线摇摆曲线半宽仅25秒,表明了衬底良好的结晶质量.使用上述高纯半绝缘衬底制备的高电子迁移率器件(HEMT)具备良好的电学性质.     

Electron Microscopy and X-ray Study of the Growth of FeCr2S4 Spinel Single Crystals by Chemical Vapour Transport

The growth features of FeCr₂S₄ spinel single crystals prepared by chemical vapour transport were studied by means of scanning electron microscopy, transmission electron microscopy, high resolution electron microscopy, electron diffraction and X-ray analysis. Our results indicate that the epitaxial growth of the new phases FeCr₇S₁₂ and FeCr₈S₁₂, both based on the NiAs structure, can essentially inhibit the growth of large FeCr₂S₄ spinel single crystals in the octahedral habit. The new phases are fully characterised and the effects of defect ordering in these new phases are also reported.     

Growth and Characterization of Urea-(DL) Tartaric Acid Single Crystals

A new organic UV nonlinear optical crystal urea-(DL)tartaric acid [CO(NH₂)₂₋(DL) C₄H₆O₆] (abbreviated as U(DL)T) is reported. Large single crystals have been grown from aqueous solution by the cooling method. They belong to the monoclinic space group P2₁ and the lattice parameters are: a = 7.6973 Å, b = 23.3310 Å, c = 4.8727 Å, and β = 100.82°. The structure and some of its physical properties have been determined. The crystal is transparent from 0.24 to 1.95 μm. The efficiency of powder SHG is larger by one order of magnitude than that of KDP. Thus the crystal will be a useful NLO material.     

Luminescence and Photoconductivity Caused by Antisite Defects in CdIn2S4 Single Crystals

Results of a study of the influence of nonstoichiometry as well as of annealing and argon ion implantation on photoluminescence and photoconductivity spectra of cadmium thioindate single crystals are presented. The energy positions of levels of antisite In_cd and Cd_In defects are found. The role of antisite defects in the process of conductivity compensation is analysed.     

Er:Lu2 O3单晶的导模法生长及性能表征

本文以高纯Lu₂O₃、Er₂O₃为原料,使用自主设计、制造的自动等径导模炉,采用导模法(EFG)生长了φ25 mm×20 mm的7.82%(原子数分数)Er:Lu₂O₃单晶,分凝系数为0.92,并探索了退火条件。X射线衍射仪(XRD)结果为纯相,X射线荧光光谱仪(XRF)结果证明杂质含量较低。利用吸收光谱计算在972 nm及1 535 nm附近的吸收截面,分别为3.24×10^-21 cm²、8.43×10^-21 cm²,半峰全宽(FWHM)分别为28.22 nm、27.31 nm。热学性能测试结果表明,在30 ℃时热导率为13.28 W·m^-1·K^-1。利用扫描电子显微镜(SEM)对晶体表面微观形貌进行了表征。     

8英寸导电型4H-SiC单晶的生长

采用物理气相传输(PVT)法扩径获得了8英寸(1英寸=2.54 cm)4H-SiC籽晶,用于8英寸导电型4H-SiC晶体生长,并加工出厚度520 μm的8英寸4H-SiC衬底。使用拉曼光谱、全自动显微镜面扫描、非接触电阻率测试仪面扫描和高分辨X射线衍射仪对衬底的晶型、微管、电阻率和结晶质量进行了表征。衬底颜色均一并结合拉曼光谱表明衬底4H-SiC晶型面积比例为100%;衬底微管密度小于0.3 cm^-2;衬底电阻率范围20~23 mΩ·cm,平均值为22 mΩ·cm;(004)面高分辨X射线摇摆曲线半峰全宽为32.7″,表明衬底良好的结晶质量。